JPS56155527A - Apparatus for liquid phase epitaxial growth - Google Patents

Apparatus for liquid phase epitaxial growth

Info

Publication number
JPS56155527A
JPS56155527A JP5889680A JP5889680A JPS56155527A JP S56155527 A JPS56155527 A JP S56155527A JP 5889680 A JP5889680 A JP 5889680A JP 5889680 A JP5889680 A JP 5889680A JP S56155527 A JPS56155527 A JP S56155527A
Authority
JP
Japan
Prior art keywords
concave
sliding member
substrate
crystallized material
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5889680A
Other languages
Japanese (ja)
Inventor
Michiharu Ito
Hiroshi Takigawa
Shigeki Hamashima
Tomoshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5889680A priority Critical patent/JPS56155527A/en
Publication of JPS56155527A publication Critical patent/JPS56155527A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To enable the repeated uses of a sliding member and reduce the cost by a method wherein a concave is formed on a support in which a substrate is buried and a crystallized material remained after the use is received, in an alloy semiconductor growing device by a sliding method. CONSTITUTION:The device by the sliding method is constructed by the support 11 buried with the substrates 3, 4 and the sliding member 12 perforated a through hole 5 in which the crystallized material is received, and made up by porous carbon. The concave 13 is formed on the top surface of the support 11. If, for example, HgCdTe is grown on a CdTe substrate, the sliding member 12 is slid and the liquid phase saturated on the dummy substrate 3 is contacted to the substrate for the growth, after the through hole 5 is filled up with HgTe and the device is raised in the temperature to liquefy the HgTe. The position of the through hole 5 is slid as far as the concave 13 with the crystallized material 6 remaining liquefied after the epitaxial growth, and the material remained after the use is cooled and hardened after being dropped into the concave 13. Thereby, the sliding member can repeatedly be used and economized because the crystallized material is not hardened.
JP5889680A 1980-04-30 1980-04-30 Apparatus for liquid phase epitaxial growth Pending JPS56155527A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5889680A JPS56155527A (en) 1980-04-30 1980-04-30 Apparatus for liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5889680A JPS56155527A (en) 1980-04-30 1980-04-30 Apparatus for liquid phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS56155527A true JPS56155527A (en) 1981-12-01

Family

ID=13097552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5889680A Pending JPS56155527A (en) 1980-04-30 1980-04-30 Apparatus for liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS56155527A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074538A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Manufacture of semiconductor element
CN103882527A (en) * 2014-01-17 2014-06-25 中国科学院上海技术物理研究所 Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5288276A (en) * 1976-01-19 1977-07-23 Oki Electric Ind Co Ltd Liquid-phase epitaxial growth

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5288276A (en) * 1976-01-19 1977-07-23 Oki Electric Ind Co Ltd Liquid-phase epitaxial growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074538A (en) * 1983-09-30 1985-04-26 Fujitsu Ltd Manufacture of semiconductor element
CN103882527A (en) * 2014-01-17 2014-06-25 中国科学院上海技术物理研究所 Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material

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