JPS5711898A - Liquid-phase epitaxial growth - Google Patents

Liquid-phase epitaxial growth

Info

Publication number
JPS5711898A
JPS5711898A JP8819080A JP8819080A JPS5711898A JP S5711898 A JPS5711898 A JP S5711898A JP 8819080 A JP8819080 A JP 8819080A JP 8819080 A JP8819080 A JP 8819080A JP S5711898 A JPS5711898 A JP S5711898A
Authority
JP
Japan
Prior art keywords
vessel
base plate
zig
solution
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8819080A
Other languages
Japanese (ja)
Other versions
JPS5920639B2 (en
Inventor
Seiji Mizuniwa
Junkichi Nakagawa
Toshiya Toyoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP8819080A priority Critical patent/JPS5920639B2/en
Publication of JPS5711898A publication Critical patent/JPS5711898A/en
Publication of JPS5920639B2 publication Critical patent/JPS5920639B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: A bored vessel is provided inside the upper zig and filled with a solution for crystal growth and the vessel is moved vertically to widen the effective growth area and effect the liquid-phase epitaxial growth suitable for mass production.
CONSTITUTION: The base plate of semiconductor 2 is placed on the lower zig 1 made from graphite and the cup-shaped vessel 5 having a hole 4 bored on the position not contacting with the base plate 2 is placed inside the upper zig 3. The solution 6 for crystal growth is charged in the vessel 5, heated to reach the saturation temperature and the surface temperature of the base plate 2 becomes stable. Then the vessel is gradually moved upward to bring the crystal growth solution 6 into contact with the base plate 2. At this time, the temperature of the upper zig 3 is kept higher than that of the lower zig 1 to prevent the solution 6 from crystallizing in the vessel 5. When the temperature is gradually lowered in this state, the epitaxial layer grows on the base plate 2.
COPYRIGHT: (C)1982,JPO&Japio
JP8819080A 1980-06-27 1980-06-27 Liquid phase epitaxial growth method Expired JPS5920639B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8819080A JPS5920639B2 (en) 1980-06-27 1980-06-27 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8819080A JPS5920639B2 (en) 1980-06-27 1980-06-27 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS5711898A true JPS5711898A (en) 1982-01-21
JPS5920639B2 JPS5920639B2 (en) 1984-05-14

Family

ID=13935976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8819080A Expired JPS5920639B2 (en) 1980-06-27 1980-06-27 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5920639B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130292U (en) * 1984-07-26 1986-02-24 三菱アルミニウム株式会社 Heatsink for electrical elements
JPS6172862U (en) * 1984-10-19 1986-05-17

Also Published As

Publication number Publication date
JPS5920639B2 (en) 1984-05-14

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