JPS5711898A - Liquid-phase epitaxial growth - Google Patents
Liquid-phase epitaxial growthInfo
- Publication number
- JPS5711898A JPS5711898A JP8819080A JP8819080A JPS5711898A JP S5711898 A JPS5711898 A JP S5711898A JP 8819080 A JP8819080 A JP 8819080A JP 8819080 A JP8819080 A JP 8819080A JP S5711898 A JPS5711898 A JP S5711898A
- Authority
- JP
- Japan
- Prior art keywords
- vessel
- base plate
- zig
- solution
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: A bored vessel is provided inside the upper zig and filled with a solution for crystal growth and the vessel is moved vertically to widen the effective growth area and effect the liquid-phase epitaxial growth suitable for mass production.
CONSTITUTION: The base plate of semiconductor 2 is placed on the lower zig 1 made from graphite and the cup-shaped vessel 5 having a hole 4 bored on the position not contacting with the base plate 2 is placed inside the upper zig 3. The solution 6 for crystal growth is charged in the vessel 5, heated to reach the saturation temperature and the surface temperature of the base plate 2 becomes stable. Then the vessel is gradually moved upward to bring the crystal growth solution 6 into contact with the base plate 2. At this time, the temperature of the upper zig 3 is kept higher than that of the lower zig 1 to prevent the solution 6 from crystallizing in the vessel 5. When the temperature is gradually lowered in this state, the epitaxial layer grows on the base plate 2.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8819080A JPS5920639B2 (en) | 1980-06-27 | 1980-06-27 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8819080A JPS5920639B2 (en) | 1980-06-27 | 1980-06-27 | Liquid phase epitaxial growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5711898A true JPS5711898A (en) | 1982-01-21 |
JPS5920639B2 JPS5920639B2 (en) | 1984-05-14 |
Family
ID=13935976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8819080A Expired JPS5920639B2 (en) | 1980-06-27 | 1980-06-27 | Liquid phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5920639B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6130292U (en) * | 1984-07-26 | 1986-02-24 | 三菱アルミニウム株式会社 | Heatsink for electrical elements |
JPS6172862U (en) * | 1984-10-19 | 1986-05-17 |
-
1980
- 1980-06-27 JP JP8819080A patent/JPS5920639B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5920639B2 (en) | 1984-05-14 |
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