JPS5742598A - Liquid-phase epitaxial growing method - Google Patents

Liquid-phase epitaxial growing method

Info

Publication number
JPS5742598A
JPS5742598A JP11749580A JP11749580A JPS5742598A JP S5742598 A JPS5742598 A JP S5742598A JP 11749580 A JP11749580 A JP 11749580A JP 11749580 A JP11749580 A JP 11749580A JP S5742598 A JPS5742598 A JP S5742598A
Authority
JP
Japan
Prior art keywords
melt
substrate
tank
liquid
transferred
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11749580A
Other languages
Japanese (ja)
Other versions
JPS614796B2 (en
Inventor
Akinori Katsui
Akiyuu Yamamoto
Takashi Andou
Zeio Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11749580A priority Critical patent/JPS5742598A/en
Publication of JPS5742598A publication Critical patent/JPS5742598A/en
Publication of JPS614796B2 publication Critical patent/JPS614796B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow a liquid-phase epitaxial film of good quality having improved uniformity, by covering the surface of a semiconductor single crystal substrate with a melt of another unreactive substance having a low specific gravity before the liquid phase growing.
CONSTITUTION: A substrate 4 is filled into a slider 7, and the slider 7 is then set in a B2O3 melt reservoir tank 8. The temperature of the tank 8 is increased by a heater 1 to melt B2O3, and the surface of the substrate 4 is covered with the B2O3 melt 8'. The substrate 4 is then transferred quickly under a melt reservoir tank 5. Most of the melt 8' is removed by the transfer; however, the melt 8' partially remaining on the surface of the substrate 4 prevents the thermal corrosion (etching) of the substrate 4 and the volatilization of elements having a high vapor pressure. The melt 8' covering the substrate 4 transferred just under the tank 5 has a lower specific gravity than that of an In melt 5', leaves the substrate 5 and floats on the melt 5'. The surface of the substrate 4 is then molten back by the melt 5'. The substrates 4 are then transferred under a melt reservoir tank 6 to cool an In melt 6' containing InP slowly and grow a Thin InP film epitaxially.
COPYRIGHT: (C)1982,JPO&Japio
JP11749580A 1980-08-26 1980-08-26 Liquid-phase epitaxial growing method Granted JPS5742598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11749580A JPS5742598A (en) 1980-08-26 1980-08-26 Liquid-phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11749580A JPS5742598A (en) 1980-08-26 1980-08-26 Liquid-phase epitaxial growing method

Publications (2)

Publication Number Publication Date
JPS5742598A true JPS5742598A (en) 1982-03-10
JPS614796B2 JPS614796B2 (en) 1986-02-13

Family

ID=14713139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11749580A Granted JPS5742598A (en) 1980-08-26 1980-08-26 Liquid-phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5742598A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136846A (en) * 1987-11-12 1989-05-30 Morton Thiokol Inc Slender gas generator expanding expansion constraint cushion for car
DE102012217718A1 (en) 2011-09-30 2013-04-04 Diehl Bgt Defence Gmbh & Co. Kg Cold-gas pyrotechnic generator useful e.g. in fire-fighting-, driving-, or underwater rescue systems, comprises first chamber, which contains hot combustive gas generator propellant, and a second chamber containing a coolant

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04141287A (en) * 1990-10-01 1992-05-14 Isao Yamada Apparatus for producing fresh water from sea water

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136846A (en) * 1987-11-12 1989-05-30 Morton Thiokol Inc Slender gas generator expanding expansion constraint cushion for car
DE102012217718A1 (en) 2011-09-30 2013-04-04 Diehl Bgt Defence Gmbh & Co. Kg Cold-gas pyrotechnic generator useful e.g. in fire-fighting-, driving-, or underwater rescue systems, comprises first chamber, which contains hot combustive gas generator propellant, and a second chamber containing a coolant

Also Published As

Publication number Publication date
JPS614796B2 (en) 1986-02-13

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