JPS56114316A - Boat for liquid phase epitaxial growth - Google Patents
Boat for liquid phase epitaxial growthInfo
- Publication number
- JPS56114316A JPS56114316A JP1633380A JP1633380A JPS56114316A JP S56114316 A JPS56114316 A JP S56114316A JP 1633380 A JP1633380 A JP 1633380A JP 1633380 A JP1633380 A JP 1633380A JP S56114316 A JPS56114316 A JP S56114316A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- substrate
- boat
- slider
- slot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To prevent the movement of a solution containing boat together with a slider and to form a P-N junction on the entire surface of a substrate by providing a slot in the solution containing boat and a stopper in the slot and providing a step on a supporting table. CONSTITUTION:A solution 4 is prepared by heating a device in a furnace outside a reactor tube. The boat 3 is moved by a rod 11 and the solution 4 is placed on the substrate 2. At this time a stopper 6 in the slot 5 drops to the step of the supporting table 1. Therefore, the boat 3 does not move to the right from the step A. The temperature of the substrate 2 and the composition of the liquid are adjusted, and the substrate 2 is not resolved into the solution 4. When the temperature is decreased slowly, crystallization growth begins. When the specified thickness of the growth is obtained, the slider 7 is moved to the right, and a hole 7' is placed on a substrate 2. At this time, impurities 10 are dropped from a part 8 into the N type solution 4, and it is changed into the P type solution. The second layer is grown to the specified thickness, the slider 7 is moved, and the solution 4 is wiped out. In this constitution, the growing solution on the substrate is never dislocated, and the epitaxially grown P-N junction can be obtained on the entire surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1633380A JPS56114316A (en) | 1980-02-13 | 1980-02-13 | Boat for liquid phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1633380A JPS56114316A (en) | 1980-02-13 | 1980-02-13 | Boat for liquid phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56114316A true JPS56114316A (en) | 1981-09-08 |
Family
ID=11913501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1633380A Pending JPS56114316A (en) | 1980-02-13 | 1980-02-13 | Boat for liquid phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56114316A (en) |
-
1980
- 1980-02-13 JP JP1633380A patent/JPS56114316A/en active Pending
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