JPS54150375A - Liquid phase epitaxial growth method for semiconductor element - Google Patents

Liquid phase epitaxial growth method for semiconductor element

Info

Publication number
JPS54150375A
JPS54150375A JP5830378A JP5830378A JPS54150375A JP S54150375 A JPS54150375 A JP S54150375A JP 5830378 A JP5830378 A JP 5830378A JP 5830378 A JP5830378 A JP 5830378A JP S54150375 A JPS54150375 A JP S54150375A
Authority
JP
Japan
Prior art keywords
storage
solution
perforation
gap
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5830378A
Other languages
Japanese (ja)
Inventor
Tetsuo Sekiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5830378A priority Critical patent/JPS54150375A/en
Publication of JPS54150375A publication Critical patent/JPS54150375A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To remarkably improve the performance and yield and also to obtain semiconductor element with good reproducibility, by carrying out expitaxial growth using solution storage and boat main body composed of different materials.
CONSTITUTION: For example, the solution storage 3 put in the solution, is made of quartz and the boat main body 1 is made of carbon and then, the piercing perforation 6 is provided with the bottom face part of the storage 3. Also, the perforation 7 connecting the storage 3 and the body 1 by adjusting with the perforation 6, is provided with the sliding board 5 between the storage 3 and the body 1. By the above construction, GaP substrate is put in the body 1 and the Ga solution 4 mixed suitable quantity of GaP, is charged in the storage 3 arranged on the substrate through the board 5 and then, the body 1 is put in heating furnace. Next, the solution 4 is dropped in the body 1 from the perforation 7 moving the board 5 after heating at a fixed temperature and epitaxial growth of GaP is carried out on the substrate crystal slowly lowering the temperature. On this occasion, impurity is not mixed with the solution 4 because the storage 3 is made of quartz and dopant concentration control is made easy.
COPYRIGHT: (C)1979,JPO&Japio
JP5830378A 1978-05-18 1978-05-18 Liquid phase epitaxial growth method for semiconductor element Pending JPS54150375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5830378A JPS54150375A (en) 1978-05-18 1978-05-18 Liquid phase epitaxial growth method for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5830378A JPS54150375A (en) 1978-05-18 1978-05-18 Liquid phase epitaxial growth method for semiconductor element

Publications (1)

Publication Number Publication Date
JPS54150375A true JPS54150375A (en) 1979-11-26

Family

ID=13080448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5830378A Pending JPS54150375A (en) 1978-05-18 1978-05-18 Liquid phase epitaxial growth method for semiconductor element

Country Status (1)

Country Link
JP (1) JPS54150375A (en)

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