JPS54133480A - Growth method for liquid phase epitaxial - Google Patents
Growth method for liquid phase epitaxialInfo
- Publication number
- JPS54133480A JPS54133480A JP4109578A JP4109578A JPS54133480A JP S54133480 A JPS54133480 A JP S54133480A JP 4109578 A JP4109578 A JP 4109578A JP 4109578 A JP4109578 A JP 4109578A JP S54133480 A JPS54133480 A JP S54133480A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- board
- impurity
- base board
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To grow the semiconductor single crystal of low impurity concentration with a good reproducibility, by carrying out meltback of base board and growing the crystal in liquid phase by the impurity in the base board after contacting single crystal base board containing a fixed impurity, with thin layer solution and carrying out baking in inactive or reducing atmosphere.
CONSTITUTION: The single crystal base board 17 containing a fixed quantity of donor impurity, is inserted in the concave part 18 of the slider 15 and the liquid phase growth solution 27 is packed in thin layer at the opening. H2 gas is flowed in the reaction furnace 10 from the gas introducing tube 12 and the board 17 and the solution 27 are heated by the main heat source. Both are contacted moving the slider 15 when the temperature is reached at 300W900°C and baking is carried out and then, meltabck of the board 17 is carried out. The donor impurity, for example, S of this portion is completely discharged out of the solution 27 together with sulfides in the solution 27. Next, temperature is risen to the crystal growth beginning temperature. By the above heat treatment, a fixed donor concentration is obtained in the solution 27 by S of the part carried out meltback. In such a condition, n-formed layer is grown on the board 17 by cooling.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4109578A JPS54133480A (en) | 1978-04-07 | 1978-04-07 | Growth method for liquid phase epitaxial |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4109578A JPS54133480A (en) | 1978-04-07 | 1978-04-07 | Growth method for liquid phase epitaxial |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54133480A true JPS54133480A (en) | 1979-10-17 |
Family
ID=12598908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4109578A Pending JPS54133480A (en) | 1978-04-07 | 1978-04-07 | Growth method for liquid phase epitaxial |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54133480A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56160033A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Liquid phase epitaxial growth |
JPS5935091A (en) * | 1982-08-20 | 1984-02-25 | Matsushita Electric Ind Co Ltd | Method for liquid-phase epitaxial growth |
US4566934A (en) * | 1982-10-28 | 1986-01-28 | At&T Bell Laboratories | Cleaning technique for LPE melt ingots |
JPS61146785A (en) * | 1984-12-20 | 1986-07-04 | Fujitsu Ltd | Method for growing single crystal |
US4620854A (en) * | 1982-10-28 | 1986-11-04 | At&T Bell Laboratories | Method of preparing indium ingots |
-
1978
- 1978-04-07 JP JP4109578A patent/JPS54133480A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56160033A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Liquid phase epitaxial growth |
JPS5935091A (en) * | 1982-08-20 | 1984-02-25 | Matsushita Electric Ind Co Ltd | Method for liquid-phase epitaxial growth |
JPH0214317B2 (en) * | 1982-08-20 | 1990-04-06 | Matsushita Electric Ind Co Ltd | |
US4566934A (en) * | 1982-10-28 | 1986-01-28 | At&T Bell Laboratories | Cleaning technique for LPE melt ingots |
US4620854A (en) * | 1982-10-28 | 1986-11-04 | At&T Bell Laboratories | Method of preparing indium ingots |
JPS61146785A (en) * | 1984-12-20 | 1986-07-04 | Fujitsu Ltd | Method for growing single crystal |
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