JPS54133480A - Growth method for liquid phase epitaxial - Google Patents

Growth method for liquid phase epitaxial

Info

Publication number
JPS54133480A
JPS54133480A JP4109578A JP4109578A JPS54133480A JP S54133480 A JPS54133480 A JP S54133480A JP 4109578 A JP4109578 A JP 4109578A JP 4109578 A JP4109578 A JP 4109578A JP S54133480 A JPS54133480 A JP S54133480A
Authority
JP
Japan
Prior art keywords
solution
board
impurity
base board
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4109578A
Other languages
Japanese (ja)
Inventor
Tatsuro Beppu
Masami Iwamoto
Makoto Tashiro
Akinobu Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4109578A priority Critical patent/JPS54133480A/en
Publication of JPS54133480A publication Critical patent/JPS54133480A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow the semiconductor single crystal of low impurity concentration with a good reproducibility, by carrying out meltback of base board and growing the crystal in liquid phase by the impurity in the base board after contacting single crystal base board containing a fixed impurity, with thin layer solution and carrying out baking in inactive or reducing atmosphere.
CONSTITUTION: The single crystal base board 17 containing a fixed quantity of donor impurity, is inserted in the concave part 18 of the slider 15 and the liquid phase growth solution 27 is packed in thin layer at the opening. H2 gas is flowed in the reaction furnace 10 from the gas introducing tube 12 and the board 17 and the solution 27 are heated by the main heat source. Both are contacted moving the slider 15 when the temperature is reached at 300W900°C and baking is carried out and then, meltabck of the board 17 is carried out. The donor impurity, for example, S of this portion is completely discharged out of the solution 27 together with sulfides in the solution 27. Next, temperature is risen to the crystal growth beginning temperature. By the above heat treatment, a fixed donor concentration is obtained in the solution 27 by S of the part carried out meltback. In such a condition, n-formed layer is grown on the board 17 by cooling.
COPYRIGHT: (C)1979,JPO&Japio
JP4109578A 1978-04-07 1978-04-07 Growth method for liquid phase epitaxial Pending JPS54133480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4109578A JPS54133480A (en) 1978-04-07 1978-04-07 Growth method for liquid phase epitaxial

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4109578A JPS54133480A (en) 1978-04-07 1978-04-07 Growth method for liquid phase epitaxial

Publications (1)

Publication Number Publication Date
JPS54133480A true JPS54133480A (en) 1979-10-17

Family

ID=12598908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4109578A Pending JPS54133480A (en) 1978-04-07 1978-04-07 Growth method for liquid phase epitaxial

Country Status (1)

Country Link
JP (1) JPS54133480A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160033A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Liquid phase epitaxial growth
JPS5935091A (en) * 1982-08-20 1984-02-25 Matsushita Electric Ind Co Ltd Method for liquid-phase epitaxial growth
US4566934A (en) * 1982-10-28 1986-01-28 At&T Bell Laboratories Cleaning technique for LPE melt ingots
JPS61146785A (en) * 1984-12-20 1986-07-04 Fujitsu Ltd Method for growing single crystal
US4620854A (en) * 1982-10-28 1986-11-04 At&T Bell Laboratories Method of preparing indium ingots

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160033A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Liquid phase epitaxial growth
JPS5935091A (en) * 1982-08-20 1984-02-25 Matsushita Electric Ind Co Ltd Method for liquid-phase epitaxial growth
JPH0214317B2 (en) * 1982-08-20 1990-04-06 Matsushita Electric Ind Co Ltd
US4566934A (en) * 1982-10-28 1986-01-28 At&T Bell Laboratories Cleaning technique for LPE melt ingots
US4620854A (en) * 1982-10-28 1986-11-04 At&T Bell Laboratories Method of preparing indium ingots
JPS61146785A (en) * 1984-12-20 1986-07-04 Fujitsu Ltd Method for growing single crystal

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