JPS5489567A - Gas phase growth method for compound semiconductor crystal - Google Patents

Abstract

PURPOSE: to establish very steep concentration change effectively, by forming the buffer of high concentration less than carrier concentration of 5 × 10^-3 or less first on the crystal substrate, and by continuously growing the active layer of a given high concentration.

CONSTITUTION: Ga13 is located in the reaction tube, constituting a given temperature distribution and introducing the mixing gas 15 of a given AsCl₂ and N₂ and the carrier gas N₂, and the buffer layer of low concentration is formed on the substrate 14 at the low temperature region a. Next, the substrate is moved to the high temperature region b and the active layer of a given high concentration and thickness is epitaxially formed by introducing the dopant 17 after the stabilization of substrate temperature. Thus, the epitaxial layer of high purity low carrier is rapidly grown at low temperatures (650 to 720°C), and the carrier concentration is increased with slower growing speed at 690 to 760°C or more. Thus, the multi-layers with rapid concentration change which had been difficult for manufacture can be achieved, together with the reproducibility of carrier concentration 5 × 10¹⁴ cm^-3 or less for the buffer layer, and no crystal failure near the boundary of concentration change is caused.

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