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Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP6993776ApriorityCriticalpatent/JPS52153375A/en
Publication of JPS52153375ApublicationCriticalpatent/JPS52153375A/en
PURPOSE: To obtain a grown layer with a less difference in the imputity concentration by etching the surface of a GaAs substrate placed horizontally on a support base within a reaction furnace and shifting the substrate to a zone maintained at a growth temperature followed by vapor pahse prowth with a reaction gas containing S impurities.
COPYRIGHT: (C)1977,JPO&Japio
JP6993776A1976-06-151976-06-15Vapor phase growth method for g#a#
PendingJPS52153375A
(en)