JPS5364466A - Semiconductor crystal growth apparatus - Google Patents
Semiconductor crystal growth apparatusInfo
- Publication number
- JPS5364466A JPS5364466A JP14031476A JP14031476A JPS5364466A JP S5364466 A JPS5364466 A JP S5364466A JP 14031476 A JP14031476 A JP 14031476A JP 14031476 A JP14031476 A JP 14031476A JP S5364466 A JPS5364466 A JP S5364466A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- crystal growth
- semiconductor crystal
- growth apparatus
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain the grown layer of a uniform liquid phase epitaxial crystal of a constant thickness on a large substrate with a rotary crucible which is formed with melt conduction holes respectively independently from each melt vessel and a growth vessel which is capable of containing the melt of a specified height over the entire surface of a substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14031476A JPS5364466A (en) | 1976-11-22 | 1976-11-22 | Semiconductor crystal growth apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14031476A JPS5364466A (en) | 1976-11-22 | 1976-11-22 | Semiconductor crystal growth apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5364466A true JPS5364466A (en) | 1978-06-08 |
Family
ID=15265910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14031476A Pending JPS5364466A (en) | 1976-11-22 | 1976-11-22 | Semiconductor crystal growth apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5364466A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5734330A (en) * | 1980-08-08 | 1982-02-24 | Mitsubishi Electric Corp | Liquid epitaxial growth device |
-
1976
- 1976-11-22 JP JP14031476A patent/JPS5364466A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5734330A (en) * | 1980-08-08 | 1982-02-24 | Mitsubishi Electric Corp | Liquid epitaxial growth device |
JPS6318857B2 (en) * | 1980-08-08 | 1988-04-20 | Mitsubishi Electric Corp |
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