JPS5364466A - Semiconductor crystal growth apparatus - Google Patents

Semiconductor crystal growth apparatus

Info

Publication number
JPS5364466A
JPS5364466A JP14031476A JP14031476A JPS5364466A JP S5364466 A JPS5364466 A JP S5364466A JP 14031476 A JP14031476 A JP 14031476A JP 14031476 A JP14031476 A JP 14031476A JP S5364466 A JPS5364466 A JP S5364466A
Authority
JP
Japan
Prior art keywords
melt
crystal growth
semiconductor crystal
growth apparatus
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14031476A
Other languages
Japanese (ja)
Inventor
Jun Ishii
Toshio Tanaka
Ryoichi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14031476A priority Critical patent/JPS5364466A/en
Publication of JPS5364466A publication Critical patent/JPS5364466A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain the grown layer of a uniform liquid phase epitaxial crystal of a constant thickness on a large substrate with a rotary crucible which is formed with melt conduction holes respectively independently from each melt vessel and a growth vessel which is capable of containing the melt of a specified height over the entire surface of a substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP14031476A 1976-11-22 1976-11-22 Semiconductor crystal growth apparatus Pending JPS5364466A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14031476A JPS5364466A (en) 1976-11-22 1976-11-22 Semiconductor crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14031476A JPS5364466A (en) 1976-11-22 1976-11-22 Semiconductor crystal growth apparatus

Publications (1)

Publication Number Publication Date
JPS5364466A true JPS5364466A (en) 1978-06-08

Family

ID=15265910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14031476A Pending JPS5364466A (en) 1976-11-22 1976-11-22 Semiconductor crystal growth apparatus

Country Status (1)

Country Link
JP (1) JPS5364466A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734330A (en) * 1980-08-08 1982-02-24 Mitsubishi Electric Corp Liquid epitaxial growth device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734330A (en) * 1980-08-08 1982-02-24 Mitsubishi Electric Corp Liquid epitaxial growth device
JPS6318857B2 (en) * 1980-08-08 1988-04-20 Mitsubishi Electric Corp

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