JPS5458689A - Method and apparatus for liquid phase epitaxial growth - Google Patents
Method and apparatus for liquid phase epitaxial growthInfo
- Publication number
- JPS5458689A JPS5458689A JP12630277A JP12630277A JPS5458689A JP S5458689 A JPS5458689 A JP S5458689A JP 12630277 A JP12630277 A JP 12630277A JP 12630277 A JP12630277 A JP 12630277A JP S5458689 A JPS5458689 A JP S5458689A
- Authority
- JP
- Japan
- Prior art keywords
- liq
- molten
- vessel
- plate
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To grow a uniform epitaxial layer, by growing the first epitaxial layer on the surface of a substrate crystal, by washing the adhered molten liq. through contact with the senond layer-forming molten liq., then by contact of the first epitaxial layer with fresh motlen liq. in order to decrease the mixing of the both molten liqs.
CONSTITUTION: Molten liq. vessel 16W19 formed by a molten-liq. vessel plate 2 are made to unite with molten-liq.-dividing spaces 12W15 formed by a molten-liq. 4W7 fed to the vessel 16W19. Then the plate 2 is moved in the direction of an arrow, so that portions of the liq. 4W7 are divided into the spaces 12W15 by the bottom of the plate 2 facing the vessel 16W19, simultaneously united vessels 9W11 are filled with the liq. 5W7. The plate 1 is moved so as to make the substrate crystal 3 contact with the liq. 4, and cooled showly to grow the first epitaxial layer on the surface of the crystal 3. Hereafter, the plate is moved once again to make the crystal 3 pass through the liq. 5 of the vessel 9 in order to wash it, then it is made to contact with the liq. 5 divided into the space 13 to cause the second layer to grow. The third and fourth growth are conducted in the similar way
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12630277A JPS5458689A (en) | 1977-10-19 | 1977-10-19 | Method and apparatus for liquid phase epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12630277A JPS5458689A (en) | 1977-10-19 | 1977-10-19 | Method and apparatus for liquid phase epitaxial growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5458689A true JPS5458689A (en) | 1979-05-11 |
JPS617007B2 JPS617007B2 (en) | 1986-03-03 |
Family
ID=14931829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12630277A Granted JPS5458689A (en) | 1977-10-19 | 1977-10-19 | Method and apparatus for liquid phase epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5458689A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0421132Y2 (en) * | 1987-06-29 | 1992-05-14 |
-
1977
- 1977-10-19 JP JP12630277A patent/JPS5458689A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS617007B2 (en) | 1986-03-03 |
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