JPS5323560A - Liquid phase epitaxial growth method - Google Patents
Liquid phase epitaxial growth methodInfo
- Publication number
- JPS5323560A JPS5323560A JP9768976A JP9768976A JPS5323560A JP S5323560 A JPS5323560 A JP S5323560A JP 9768976 A JP9768976 A JP 9768976A JP 9768976 A JP9768976 A JP 9768976A JP S5323560 A JPS5323560 A JP S5323560A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- epitaxial growth
- growth method
- phase epitaxial
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a homogeneous, defect-free and high-quality multilayer structure by cleaning the ground surface with the cleaning solution containing a strong reductive element Al, Mg, Be or Te which does not make direct contribution to crystal growth and having the compsotiion close to that of an epitaxial growing solution of the next layer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9768976A JPS5323560A (en) | 1976-08-18 | 1976-08-18 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9768976A JPS5323560A (en) | 1976-08-18 | 1976-08-18 | Liquid phase epitaxial growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5323560A true JPS5323560A (en) | 1978-03-04 |
JPS5527459B2 JPS5527459B2 (en) | 1980-07-21 |
Family
ID=14198916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9768976A Granted JPS5323560A (en) | 1976-08-18 | 1976-08-18 | Liquid phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5323560A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5590499A (en) * | 1978-12-25 | 1980-07-09 | Nec Corp | Liquid phase epitaxial growing |
JPS63288619A (en) * | 1987-05-18 | 1988-11-25 | Mitsubishi Electric Corp | Electric discharge machine |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5190267A (en) * | 1975-02-04 | 1976-08-07 | Handotaihakumakuno seisakuhoho |
-
1976
- 1976-08-18 JP JP9768976A patent/JPS5323560A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5190267A (en) * | 1975-02-04 | 1976-08-07 | Handotaihakumakuno seisakuhoho |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5590499A (en) * | 1978-12-25 | 1980-07-09 | Nec Corp | Liquid phase epitaxial growing |
JPS6236998B2 (en) * | 1978-12-25 | 1987-08-10 | Nippon Electric Co | |
JPS63288619A (en) * | 1987-05-18 | 1988-11-25 | Mitsubishi Electric Corp | Electric discharge machine |
Also Published As
Publication number | Publication date |
---|---|
JPS5527459B2 (en) | 1980-07-21 |
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