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Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP9111476ApriorityCriticalpatent/JPS5317065A/en
Publication of JPS5317065ApublicationCriticalpatent/JPS5317065A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To form grown layers containing impurities evenly by providing wafers non-horizontally and contacting the upper and lower parts of the main surfaces thereof with different effective solution layer thicknesses.
COPYRIGHT: (C)1978,JPO&Japio
JP9111476A1976-07-301976-07-30Liquid phase growth method for semiconductor substrate
PendingJPS5317065A
(en)