JPS5777095A - Liquid phase epitaxial growing apparatus - Google Patents

Liquid phase epitaxial growing apparatus

Info

Publication number
JPS5777095A
JPS5777095A JP15093180A JP15093180A JPS5777095A JP S5777095 A JPS5777095 A JP S5777095A JP 15093180 A JP15093180 A JP 15093180A JP 15093180 A JP15093180 A JP 15093180A JP S5777095 A JPS5777095 A JP S5777095A
Authority
JP
Japan
Prior art keywords
recess
remainder
liq
phase
growing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15093180A
Other languages
Japanese (ja)
Inventor
Michiharu Ito
Mitsuo Yoshikawa
Shigeki Hamashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15093180A priority Critical patent/JPS5777095A/en
Publication of JPS5777095A publication Critical patent/JPS5777095A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To easily take out the remainder of a semiconductor material after solidification by forming a recess coated internally with quartz for holding the remainder in the support of the titled apparatus used in a sliding method.
CONSTITUTION: This liq. phase epitaxial growing apparatus is composed of a support table 11 provided with an embedded dummy substrate 3 made of CdTe and an embedded substrate 4 made of CdTe for growth and of a sliding member 12 moving on the table 11 while sliding and provided with a through hole 15 retain inging the liq, phase 6 of a semiconductor crystal material for epitaxial growth on the substrate 4. A recess 13 for holding the remainder of the liq. phase 6 is formed in the table 11, and the inside of the recess is coated with a quartz glass film 14. As a result, the remainder put in the recess 13 does not stick to the table 11 even after solidification and can be taken out easily.
COPYRIGHT: (C)1982,JPO&Japio
JP15093180A 1980-10-27 1980-10-27 Liquid phase epitaxial growing apparatus Pending JPS5777095A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15093180A JPS5777095A (en) 1980-10-27 1980-10-27 Liquid phase epitaxial growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15093180A JPS5777095A (en) 1980-10-27 1980-10-27 Liquid phase epitaxial growing apparatus

Publications (1)

Publication Number Publication Date
JPS5777095A true JPS5777095A (en) 1982-05-14

Family

ID=15507532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15093180A Pending JPS5777095A (en) 1980-10-27 1980-10-27 Liquid phase epitaxial growing apparatus

Country Status (1)

Country Link
JP (1) JPS5777095A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103882527A (en) * 2014-01-17 2014-06-25 中国科学院上海技术物理研究所 Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103882527A (en) * 2014-01-17 2014-06-25 中国科学院上海技术物理研究所 Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material

Similar Documents

Publication Publication Date Title
JPS5777095A (en) Liquid phase epitaxial growing apparatus
JPS53147700A (en) Method of producing silicon carbide substrate
JPS52106673A (en) Crystal growing method and device thereof
JPS547861A (en) Liquid phase epitaxial growth method
JPS56155527A (en) Apparatus for liquid phase epitaxial growth
JPS5261958A (en) Method and device for liquid phase crystal crowth
JPS5337184A (en) Epitaxially growing method in liquid phase
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5317065A (en) Liquid phase growth method for semiconductor substrate
JPS52115783A (en) Liquid phase epitaxial growth
JPS52115784A (en) Liquid phase epitaxial growth
JPS5232890A (en) Method for liquid phase epitaxial growth
JPS5252570A (en) Device for production of compound semiconductor
JPS51121258A (en) Liquid phase growth method for semiconductor thin films
JPS5478377A (en) Method and apparatus for growing semiconductor crystal
JPS5231665A (en) Growing method of semiconductor crystal
JPS5329750A (en) Liquid crystal display device
JPS5381487A (en) Method and apparatus for liquid phase epitaxial growth
JPS5358978A (en) Growing method for crystal
JPS5421861A (en) Production of liquid crystal elements
JPS53125276A (en) Liquid phase epitaxial growth apparatus
JPS52109866A (en) Liquid epitaxial growing method
JPS5386162A (en) Liquid phase crystal growth method
JPS5323560A (en) Liquid phase epitaxial growth method