CN103882527A - Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material - Google Patents
Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material Download PDFInfo
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- CN103882527A CN103882527A CN201410020985.4A CN201410020985A CN103882527A CN 103882527 A CN103882527 A CN 103882527A CN 201410020985 A CN201410020985 A CN 201410020985A CN 103882527 A CN103882527 A CN 103882527A
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Abstract
The invention discloses a growing device for reducing the mucus on the surface of an HgCdTe liquid-phase epitaxial material. The device comprises a graphite support, a graphite plate, a graphite slider and a graphite cover plate, wherein a substrate tank and a mother liquor collecting tank are arranged on the graphite plate, and a substrate and a washer are overlapped in the substrate tank. The growing device is characterized in that the total thickness is slightly less than the depth of the substrate tank by controlling the thicknesses of the washer and the substrate, so that mother liquor can be favorably scraped off and the surface of the substrate cannot be scratched; the mother liquor collecting tank is arranged on the graphite plate, so that liquid-state mother liquor which is not cooled can be effectively collected and cannot flow back to the surface of the substrate after the growth comes to the end. Through the improvement, the residual mother liquor on the surface of epitaxial material can be effectively reduced.
Description
Technical field
The present invention relates to the Liquid－phase epitaxial growth technique of mercury cadmium telluride thin film material, refer to especially a kind of growing apparatus that can reduce mercury cadmium telluride rheotaxial material surface mucus.
Background technology
Te-Cd-Hg is the important materials of manufacturing infrared eye, can change by the component proportions of adjusting material the optical absorption band system of material, thereby produces the infrared eye of different response wave lengths.The method of mercury cadmium telluride material growth has a variety of, such as: bulk growth method, molecular beam epitaxy, organo-metallic vapour phase epitaxy, rheotaxy etc.Wherein, rheotaxy is a kind of very ripe growth technology, and the principle of rheotaxy is saturated solution crystallographic orientation and form film on the substrate in supercooled state.Rheotaxy can be divided into three kinds of techniques: vertical pickling process, the boat method of inclining and level push away boat method.It is few, reproducible that level pushes away the mother liquor consumption that boat sends out, and is therefore widely used.But a shortcoming of this method is that, after having grown, film surface tends to the cooling growth solution (mother liquor) of a residual fritter, is called surperficial mucus in this patent.In the time that reality is used, need to be by the excision of residual this part mother liquor, thus reduce the useful area [M G Astles, N Shaw and G Blackmore, Semicond.Sci.Tech., Vol.8 (1993) 211] of epitaxial material.Surface mucus is formed with multiple reasons, such as: the surface tension of growth temperature, mother liquor, the structure of growth graphite boat etc., improving graphite boat design is to reduce the key factor that epi-layer surface mucus is.This patent has proposed a kind of new graphite boat structure, can more effectively remove surperficial mucus, grows high-quality mercury cadmium telluride rheotaxial film.
Summary of the invention
The object of the invention is to propose a kind of growing apparatus that reduces mercury cadmium telluride rheotaxial material surface mucus, a kind of level pushes away the growing apparatus of boat rheotaxy, and it is residual that this device can reduce the growth solution (mother liquor) on tellurium cadmium mercury epitaxial layer surface.
Growing apparatus of the present invention comprises graphite support 4, graphite cake 3, graphite slider 2 and graphite cover plate 1.Graphite cake 3 is fixed on graphite support 4, graphite cover plate 1 is fixed by graphite screw with graphite slider 2, on graphite cake 3, have substrate groove 5, the interior placement boron nitride of substrate groove 5 pad 6 and substrate 7, on graphite slider 2, have mother liquor tank 9, the interior placement growth mother liquid 8 of mother liquor tank 9, the relatively sliding by graphite slider 2 with graphite cake 3, can realize contact between mother liquor 8 and substrate 7 and separate, thereby realize the epitaxy of mercury cadmium telluride thin film.
The thickness of graphite cake 3 is 3～4 millimeters; On graphite cake 3, have the substrate groove 5 of placing boron nitride pad 6 and substrate 7, on graphite cake 3, also have mother liquor receiving tank 10, substrate groove 5 is positioned at the right side of mother liquor receiving tank 10, and distance is between the two greater than 4 millimeters, the length of mother liquor receiving tank 10 and wide than the length of substrate groove 5 and the wide 2mm that is all greater than.
Beneficial effect of the present invention is: by controlling the thickness of boron nitride pad 6 and substrate 7, make its total thickness be slightly less than the degree of depth of substrate groove 5; On graphite cake 3, increased a mother liquor receiving tank 10, after growth is finished, not yet cooling mother liquor 8 can not be back to substrate 7 surfaces.By the improvement of above these two aspects, can effectively reduce the residual mother liquor on epitaxial material surface.
Brief description of the drawings
Fig. 1 is the view before epitaxy.
Fig. 2 is the view in epitaxial process.
Fig. 3 is the view after epitaxy bundle.
Fig. 4 be before growing apparatus improves with improve after the contrast of the material that obtains, figure (a) adopts the photo of the material obtaining without improved growing apparatus, figure (b) is the photo of the material that obtains of employing growing apparatus of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail:
Growing apparatus of the present invention comprises graphite support 4, graphite cake 3, graphite slider 2 and graphite cover plate 1.Graphite cake 3 is fixed on graphite support 4, and graphite cover plate 1 is fixed by graphite screw with graphite slider 2.On graphite slider 2, have mother liquor tank 9, the interior placement growth mother liquid 8 of mother liquor tank 9, the relatively sliding by graphite slider 2 with graphite cake 3, realizes contact between mother liquor 8 and substrate 7 and separates, thereby realizes the growth of thin-film material.On graphite cake, 3 have substrate groove 5, and the interior placement boron nitride of substrate groove 5 pad 6 and substrate 7, by adopting the boron nitride pad 6 of suitable thickness and controlling the thickness of substrate 7, can make both total thickness be slightly less than the thickness of graphite cake, and the difference of thickness is 20 microns.Like this, in the time that graphite slider 2 slides, the gap of it and substrate 7 is 20 microns, thereby can effectively strike off mother liquor 8, and can not scratch substrate 7.On graphite cake 3, also have mother liquor receiving tank 10, its size is slightly larger than substrate groove 5.After growth finishes, due to the slip of graphite slider 2, mother liquor 8 separates with substrate 7, due to the effect of mother liquor receiving tank 10, can enter mother liquor receiving tank 10 in liquid mother liquor 8, can not be back to after substrate 7 surface cures and form and be stained with liquid.
Before mercury cadmium telluride rheotaxial growth, pre-synthesis Te-Cd-Hg saturated solution is put into mother liquor tank 9, substrate 7 good polished finish and boron nitride pad 6 are put into substrate groove 5, then growing apparatus is sent into growth chamber, be heated to default growth temperature, as shown in Figure 1.After temperature-stable, graphite slider 2 is moved horizontally left, mother liquor 8 is contacted with substrate 7, start epitaxy, as shown in Figure 2.In process of growth, make temperature slow decreasing, rate of temperature fall is 0.1～0.2 degrees celsius/minute, thereby mother liquor 8 can be because saturated separating out forms Te-Cd-Hg monocrystalline film on substrate, when reaching after default film growth thickness, again graphite slider 2 is moved horizontally left, mother liquor 8 is separated with substrate 7, and mother liquor 8 flows into mother liquor receiving tank 10, as shown in Figure 3, then system is down to room temperature fast, completes epitaxial process one time.
Fig. 4 is before growing apparatus improves and improves the contrast of the rear material obtaining.Adopt the material obtaining without improved growing apparatus as shown in Fig. 4 a, can see, material surface has very serious surface to be stained with liquid, Fig. 4 b is the photo that adopts the material that obtains of growing apparatus of the present invention, can see that being stained with liquid problem obviously improves, and just has a small amount of liquid of being stained with in lower left corner edge.
Adopt growing apparatus and the level of this invention to push away boat liquid phase epitaxial method, having grown area is the tellurium cadmium mercury epitaxial thin-film material of 30x40 square millimeter, the thickness of material is 10～12 microns, material surface to be stained with liquid few, do not scratch, surface-brightening, has been applied to the preparation of medium wave and LONG WAVE INFRARED focus planardetector.
Claims (1)
1. one kind is reduced mercury cadmium telluride rheotaxial material surface and is stained with the growing apparatus of liquid, its structure is: graphite cake (3) is fixed on graphite support (4), graphite cover plate (1) is fixed with graphite screw with graphite slider (2), graphite slider (2) can move left and right with respect to graphite cake (3), on graphite slider (2), have the mother liquor tank (9) that holds mother liquor (8), it is characterized in that: the thickness of described graphite cake (3) is 3～4 millimeters, have the substrate groove (5) of placing boron nitride pad (6) and substrate (7) above, on graphite cake (3), also have mother liquor receiving tank (10), substrate groove (5) is positioned at the right side of mother liquor receiving tank (10), distance is between the two greater than 4 millimeters, the length of mother liquor receiving tank (10) and wide than the length of substrate groove (5) and wide all large 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410020985.4A CN103882527A (en) | 2014-01-17 | 2014-01-17 | Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material |
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| CN201410020985.4A CN103882527A (en) | 2014-01-17 | 2014-01-17 | Growing device for reducing mucus on surface of HgCdTe liquid-phase epitaxial material |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328487A (en) * | 2014-10-16 | 2015-02-04 | 中国科学院上海技术物理研究所 | Dual-substrate groove liquid phase epitaxial graphite boat possessing mother liquor purifying function |
| CN106637390A (en) * | 2016-12-22 | 2017-05-10 | 中国电子科技集团公司第十研究所 | Graphite boat for epitaxial growth of horizontal liquid phase of mercury cadmium telluride thin film |
| CN111876825A (en) * | 2020-07-28 | 2020-11-03 | 中国电子科技集团公司第十一研究所 | Adjustable graphite boat for liquid phase epitaxy process |
| CN112080796A (en) * | 2020-09-21 | 2020-12-15 | 北京智创芯源科技有限公司 | Horizontal liquid phase epitaxial graphite boat, growth system, epitaxial method and growth method |
| CN113930839A (en) * | 2021-09-29 | 2022-01-14 | 中国电子科技集团公司第十一研究所 | Graphite boat for liquid phase epitaxy and use method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56116616A (en) * | 1980-02-20 | 1981-09-12 | Fujitsu Ltd | Manufacture of semiconductor wafers |
| JPS56155527A (en) * | 1980-04-30 | 1981-12-01 | Fujitsu Ltd | Apparatus for liquid phase epitaxial growth |
| JPS5777095A (en) * | 1980-10-27 | 1982-05-14 | Fujitsu Ltd | Liquid phase epitaxial growing apparatus |
| JPH01167296A (en) * | 1987-12-22 | 1989-06-30 | Fujitsu Ltd | Liquid phase epitaxial growth apparatus |
| JPH0485819A (en) * | 1990-07-27 | 1992-03-18 | Fujitsu Ltd | Liquid phase epitaxial growth device |
| CN101225542A (en) * | 2007-10-31 | 2008-07-23 | 中国科学院上海技术物理研究所 | Liquid-phase epitaxy graphite boat preventing boat-sticking of mother liquid |
| CN101353812A (en) * | 2007-07-25 | 2009-01-28 | 中国科学院上海技术物理研究所 | Tunneling type graphite boat for semi-conducting material liquid phase epitaxial growth |
| CN203768488U (en) * | 2014-01-17 | 2014-08-13 | 中国科学院上海技术物理研究所 | Growing device capable of reducing surface mucus of mercury cadmium telluride liquid-phase epitaxial material |
-
2014
- 2014-01-17 CN CN201410020985.4A patent/CN103882527A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56116616A (en) * | 1980-02-20 | 1981-09-12 | Fujitsu Ltd | Manufacture of semiconductor wafers |
| JPS56155527A (en) * | 1980-04-30 | 1981-12-01 | Fujitsu Ltd | Apparatus for liquid phase epitaxial growth |
| JPS5777095A (en) * | 1980-10-27 | 1982-05-14 | Fujitsu Ltd | Liquid phase epitaxial growing apparatus |
| JPH01167296A (en) * | 1987-12-22 | 1989-06-30 | Fujitsu Ltd | Liquid phase epitaxial growth apparatus |
| JPH0485819A (en) * | 1990-07-27 | 1992-03-18 | Fujitsu Ltd | Liquid phase epitaxial growth device |
| CN101353812A (en) * | 2007-07-25 | 2009-01-28 | 中国科学院上海技术物理研究所 | Tunneling type graphite boat for semi-conducting material liquid phase epitaxial growth |
| CN101225542A (en) * | 2007-10-31 | 2008-07-23 | 中国科学院上海技术物理研究所 | Liquid-phase epitaxy graphite boat preventing boat-sticking of mother liquid |
| CN203768488U (en) * | 2014-01-17 | 2014-08-13 | 中国科学院上海技术物理研究所 | Growing device capable of reducing surface mucus of mercury cadmium telluride liquid-phase epitaxial material |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328487A (en) * | 2014-10-16 | 2015-02-04 | 中国科学院上海技术物理研究所 | Dual-substrate groove liquid phase epitaxial graphite boat possessing mother liquor purifying function |
| CN106637390A (en) * | 2016-12-22 | 2017-05-10 | 中国电子科技集团公司第十研究所 | Graphite boat for epitaxial growth of horizontal liquid phase of mercury cadmium telluride thin film |
| CN111876825A (en) * | 2020-07-28 | 2020-11-03 | 中国电子科技集团公司第十一研究所 | Adjustable graphite boat for liquid phase epitaxy process |
| CN112080796A (en) * | 2020-09-21 | 2020-12-15 | 北京智创芯源科技有限公司 | Horizontal liquid phase epitaxial graphite boat, growth system, epitaxial method and growth method |
| CN112080796B (en) * | 2020-09-21 | 2021-04-13 | 北京智创芯源科技有限公司 | Horizontal liquid phase epitaxial graphite boat, growth system, epitaxial method and growth method |
| CN113930839A (en) * | 2021-09-29 | 2022-01-14 | 中国电子科技集团公司第十一研究所 | Graphite boat for liquid phase epitaxy and use method thereof |
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Application publication date: 20140625 |