CN111074347A - Seed crystal growth device - Google Patents
Seed crystal growth device Download PDFInfo
- Publication number
- CN111074347A CN111074347A CN201911161658.XA CN201911161658A CN111074347A CN 111074347 A CN111074347 A CN 111074347A CN 201911161658 A CN201911161658 A CN 201911161658A CN 111074347 A CN111074347 A CN 111074347A
- Authority
- CN
- China
- Prior art keywords
- crucible
- crystal
- cover
- diameter
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Abstract
The invention provides a seed crystal growth device, which comprises an outer crucible, an inner crucible and a crucible cover, wherein the inner crucible is of a top opening structure and comprises a pull rod, and the pull rod is vertically fixed at the center of the bottom of the inner crucible; the center of the lower surface of the crucible cover comprises a small hole; the pull rod is movably connected with the small hole; the crucible cover covers the opening at the top of the outer crucible, so that the inner crucible is positioned in the inner space of the outer crucible, and the outer wall of the inner crucible is not contacted with the inner wall of the outer crucible and the lower surface of the crucible cover; the bottom center of the outer crucible comprises a cylindrical seed crystal platform for fixing seed crystals. The crucible provided by the invention can avoid the defects of uneven bonding and increased stress in the crystal caused by reverse growth of the crystal.
Description
Technical Field
The invention relates to the field of silicon carbide crystal growth, in particular to a seed crystal growth device.
Background
The method for realizing mass production by the existing silicon carbide single crystal growth technology mainly comprises a PVT method and a CVD method, and the most common seed crystal growth device for the two methods is a graphite crucible. The method for growing the silicon carbide crystal by the common PVT method comprises the steps of placing raw materials at the bottom of a crucible, adhering seed crystals to the lower surface of a crucible cover, buckling the crucible cover on the crucible to enable the seed crystals to be hung upside down in the crucible, and then heating the crucible to enable the raw materials to sublimate and grow on the surface of the seed crystals. The CVD method is mainly a vapor phase epitaxy type growth mode, and the method comprises the steps of filling a silicon-containing atmosphere and a carbon-containing atmosphere according to a certain proportion, and carrying out chemical reduction reaction on the mixed atmosphere and the surface of the growth seed crystal so as to grow a silicon carbide thin layer on the surface of the seed crystal.
In both of the above two prior arts, the seed crystal needs to be bonded to the surface of the graphite crucible, which is likely to cause the problem of non-uniform bonding, thereby affecting the repeatability of the single crystal growth process. Meanwhile, the seed crystal is suspended in the crucible, so that the crystal grows reversely, the internal stress of the crystal growth can be increased, and the quality of the crystal growth is reduced.
Therefore, there is a need for a technique that can ensure the forward growth of the crystal and has a good growth efficiency.
Disclosure of Invention
In order to solve the defects caused by the reverse growth of the crystal in the crystal growth process, the invention provides a seed crystal growth device, which aims to form saturated silicon carbide steam on the surface of a seed crystal by sublimating raw materials up and down in a crucible, so that the seed crystal grows in the positive direction and is condensed to form a core, and the problems of non-uniform bonding and increased internal stress of the crystal caused by the reverse growth of the seed crystal can be avoided.
In order to achieve the purpose, the invention adopts a technical scheme that: a seed crystal growth device comprises an outer crucible, an inner crucible and a crucible cover, wherein the inner crucible is of a top opening structure, the inner crucible comprises a pull rod, and the pull rod is vertically fixed at the center of the bottom of the inner crucible; the center of the lower surface of the crucible cover comprises a small hole; the pull rod and the small hole can be movably connected relatively;
the crucible cover covers the top opening of the outer crucible, so that the inner crucible is located in the inner space of the outer crucible, and the outer wall of the inner crucible is not in contact with the inner wall of the outer crucible and the lower surface of the crucible cover.
Preferably, the top of the pull rod is provided with a threaded structure, a small hole in the center of the lower surface of the crucible cover is a threaded hole, and the inner crucible is connected to the crucible cover through the top of the pull rod and the threaded hole; the pull rod is higher than the upper surface of the inner crucible.
The bottom center of the outer crucible comprises a cylindrical seed crystal platform for fixing seed crystals.
Preferably, the seed crystal platform and the inner wall and the bottom of the outer crucible form an annular groove.
Preferably, the seed crystal platform comprises a conical platform, the conical platform is in an inverted cone shape, and the upper surface of the conical platform is provided with a groove for fixing the seed crystal; the lower surface of the conical table is matched with an inverted conical opening in the center of the bottom of the outer crucible.
Preferably, the center of the lower bottom surface of the conical table is provided with an opening.
Preferably, the crucible cover is in a T-shaped structure, wherein the diameter of the cylinder on the upper surface of the crucible cover is the same as the outer diameter of the outer crucible and is larger than the diameter of the cylinder on the lower surface of the crucible cover.
Preferably, the inner crucible is of an inverted truncated cone shape, and the outer diameter of the upper end is larger than that of the bottom end.
Preferably, the inner wall of the upper part of the outer crucible at a distance from the opening tapers uniformly inwards.
Preferably, the center of the upper surface of the conical table is provided with a groove with a diameter slightly smaller than that of the upper surface of the conical table.
In order to achieve the purpose, the invention adopts another technical scheme that: use of an apparatus according to any one of the above in the preparation of a silicon carbide single crystal grown in a forward direction on a seed platform of the apparatus.
Compared with the prior art, the invention has the advantages that: in the seed crystal growth device provided by the invention, raw materials can be placed in a high-temperature area on the side wall of the bottom and a high-temperature area on the upper part of the crucible, and are sublimated up and down in the crucible through the control of the flow direction of gas and the gradient of a bottom temperature field, so that saturated silicon carbide steam is formed on the surface of the seed crystal, and thus, the seed crystal is condensed and nucleated. The seed crystal is fixed in the groove on the upper surface through the conical table-board, so that the problem of uneven adhesion between the seed crystal and the graphite surface is avoided.
On the other hand, because the seed crystal is positively fixed on the upper surface of the conical table, after the growth height of the crystal exceeds the fixed groove, the crystal starts to grow freely and positively, thereby reducing the internal stress of the crystal growth and improving the quality of the crystal growth. Meanwhile, the raw materials at the upper part and the lower part of the crucible are supplied simultaneously, so that the concentration of saturated vapor pressure in the crucible is ensured, and the growth rate of the crystal is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1: the crucible cover provided by one embodiment of the invention is a schematic structural diagram in a front view;
FIG. 2: the front view structure of the inner crucible is schematically shown in another embodiment of the invention;
FIG. 3: the main view structure of the outer crucible is schematically shown in another embodiment of the invention;
FIG. 4: the invention provides a schematic front view structure diagram of a conical table according to another embodiment;
FIG. 5: another embodiment of the invention provides a front view structure schematic diagram of a seed crystal growth device.
FIG. 6: the invention also provides a front view structure schematic diagram of the seed crystal growth device in the crucible crystal growth process.
FIG. 7: the growth surface topography of the hillock island of example 1 of the present invention was photographed.
FIG. 8: the film-like growth surface morphology photograph of example 2 of the present invention.
FIG. 9: the photographs of the growth surface morphology of the thread shape of example 3 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic front view of a crucible cover according to an embodiment of the present invention.
As shown, the crucible cover is cylindrical in a T-shaped configuration, with the diameter of the upper surface cylinder 101 being greater than the diameter of the lower surface cylinder 102. In an alternative embodiment, the upper surface cylinder 101 is 195mm in diameter and 5mm in height, and the lower surface cylinder 102 is 175mm in diameter and 20mm in height. The center of the lower surface is provided with a threaded hole 103 with the diameter of 10mm and the depth of the threaded hole is 10mm, and the threaded hole 103 can be in threaded fit with a pull rod of the inner crucible.
FIG. 2 is a schematic front view of an inner crucible according to another embodiment of the present invention.
As shown, the inner crucible 201 is in a "mountain" configuration and is open at the top for receiving feedstock. Specifically, the inner crucible 201 further comprises a pull rod 202, and the pull rod 202 is vertically fixed at the bottom center of the inner crucible 201. In an alternative embodiment, the inner crucible 201 has a total height of 82mm, an outer diameter of 105mm at the bottom end and a bottom thickness of 8 mm; the inner diameter is 93mm, the inner height is 72mm, and the wall thickness is 8 mm; the upper part has an outer diameter of 159mm and an inner diameter of 142 mm. The pull rod 202 has the diameter of 10mm, the height of 90mm, the top thread 203 and the thread section height of 12mm, and the threaded rod can be matched with a threaded hole at the bottom of the crucible cover.
FIG. 3 is a schematic front view of an outer crucible according to another embodiment of the present invention.
As shown, the upper part of the outer crucible 301 is open, the bottom of the outer crucible is provided with an inverted cone-shaped opening 302, and the opening 302 and the side wall of the outer crucible form a groove 303 with a structure of an oil dipper shape. In an alternative embodiment, the outer crucible 301 has an outer diameter of 195mm, an overall height of 228mm, a bottom thickness of 16mm, an inner diameter of 163mm and a wall thickness of 16 mm.
In an alternative embodiment, the outer crucible 301 is 175mm from the inner diameter within 26mm of the upper opening; the inner diameter of the side wall of the outer crucible is uniformly reduced to 163mm at a position 26mm-40mm away from the upper opening; the depth of the groove 303 on the inner side wall of the bottom of the outer crucible is 39mm, and the diameter of the groove is 29 mm; the central opening 302 at the bottom of the outer crucible is in an inverted cone shape, the diameter of the bottom of the conical opening 302 is 10mm, the diameter of the upper part of the conical opening 302 is 105mm, and the height is 55 m.
Fig. 4 is a front view of a conical table according to another embodiment of the present invention.
As shown, the conical platform 401 is an inverted cone structure, the lower surface of which fits the bottom inverted cone opening of the outer crucible, and the upper surface is used for fixing seed crystals. In an alternative embodiment, the center of the upper surface of the conical table is provided with a groove 402 for fixing the seed crystal, the diameter of the upper surface is 105mm, the depth of the groove is 2mm, and the diameter is 100.2 mm; the diameter of the lower surface of the conical table is 30 mm; in an alternative embodiment, the lower surface of the conical table has a central opening 403 with a diameter of 20mm and a depth of 52.8 mm.
Fig. 5 is a schematic front view of a seed crystal growth apparatus according to another embodiment of the present invention.
As shown in the figure, in the actual crystal growth process, the main steps include: selecting seed crystals, cleaning the seed crystals, and then placing the seed crystals into the grooves on the upper surface of the conical table to enable the growth surfaces of the seed crystals to be upward; the conical table is placed at an inverted cone-shaped opening at the center of the bottom of the outer crucible and fixed; high-purity silicon carbide powder is put into the inner groove of the outer crucible and the inner crucible, and in the optional embodiment, the powder is filled to a position about 2mm away from the upper opening, and the net weight of the filled raw materials can reach 980 g; the threaded hole on the lower surface of the crucible cover is matched and screwed with the pull rod thread at the center of the inner crucible, so that the inner crucible is positioned under the crucible cover; the crucible cover is covered, so that the inner crucible is positioned in the outer crucible and does not touch the inner wall of the outer crucible and the inner wall of the crucible cover.
FIG. 6 is a schematic front view showing the structure of the seed crystal growing apparatus shown in FIG. 5. It can be seen that SiC crystals of a certain thickness were grown on the conical table of the seed crystal growth apparatus.
The invention also provides a verification embodiment, in particular to a comparative growth experiment which adopts the same process conditions.
The first embodiment is as follows: carrying out crystal growth by adopting a common PVT method, wherein the growth process parameters are controlled as follows: the pressure is controlled at 10torr, the flow rate of argon is 200sccm, the temperature is controlled at the bottom, and the temperature is controlled at 2180 ℃. And then carrying out the growth of single crystal by heating, keeping constant temperature and cooling according to the process requirements. After 10 hours of growth, the crystal is taken out to observe the growth morphology. In the embodiment, the crystal surface is a island-shaped distributed crystal, the effective height of the crystal growth is about 0.8mm, and the growth rate is about 1.8 g/hr; the number of micro-tubes on the surface is large; the crystal form is 100%, and the effective use area of the crystal is more than 85%;
example two: carrying out crystal growth by adopting a CVD method, wherein the growth process parameters are controlled as follows: the pressure is controlled at 10torr, the flow rate of argon is 200sccm, the temperature is controlled at the bottom, and the temperature is controlled at 2180 ℃. Then carrying out the growth process of single crystal heating-constant temperature-cooling according to the process requirements. After 10 hours of growth, the crystal is taken out to observe the growth morphology. In the embodiment, the surface of the crystal is in a film shape, the effective height of the crystal growth is about 0.08mm, and the growth rate is about 0.2 g/hr; the number of micro-tubes on the surface is large; the crystal form is 100%, and the effective use area of the crystal is more than 90%;
example three: the crystal growth is carried out by adopting a single crystal forward growth method, and the growth process parameters are controlled as follows: the pressure is controlled at 10torr, the flow rate of argon is 200sccm, the temperature is controlled at the bottom, and the temperature is controlled at 2180 ℃. Then carrying out the growth process of single crystal heating-constant temperature-cooling according to the process requirements. After 10 hours of growth, the crystal is taken out to observe the growth morphology. In the embodiment, the surface of the crystal is in spiral step-shaped deposition, the effective height of the crystal growth is about 1.6mm, and the growth rate is about 4 g/hr; the number of surface micropipes is small; the crystal form is 100%, and the effective use area of the crystal is more than 95%.
The main parameter control of the experimental operation includes pressure control of 10torr, argon flow rate of 200sccm, bottom temperature control of 2180 ℃. Then carrying out the growth process of single crystal heating-constant temperature-cooling according to the process requirements. After 10 hours of growth, the crystals were taken out and observed for growth morphology and nucleation analysis as shown in Table 1.
TABLE 1
Therefore, compared with the traditional PVT method and CVD method for crystal growth, the seed crystal growth device for the single crystal forward growth method has the advantages that the crystal growth height, the growth rate, the effective use area and the crystal quality are obviously improved.
The seed crystal growth device provided by the invention is described in detail, a specific example is applied in the description to explain the principle and the implementation mode of the invention, and the description of the implementation is only used for helping to understand the core idea of the invention; while the invention has been described in detail and with reference to specific embodiments thereof, it will be apparent to one skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A seed crystal growth device is characterized by comprising an outer crucible, an inner crucible and a crucible cover, wherein the inner crucible is of a top opening structure and comprises a pull rod which is vertically fixed at the bottom center of the inner crucible; the center of the lower surface of the crucible cover comprises a small hole; the pull rod is connected with the small hole;
the crucible cover covers the opening at the top of the outer crucible, so that the inner crucible is positioned in the inner space of the outer crucible, and the outer wall of the inner crucible is not contacted with the inner wall of the outer crucible and the lower surface of the crucible cover;
the bottom center of the outer crucible comprises a cylindrical seed crystal platform for fixing seed crystals.
2. The apparatus of claim 1, wherein the seed platform forms an annular recess with the inner wall and bottom of the outer crucible.
3. The apparatus as claimed in claim 1, wherein the seed crystal platform comprises a conical platform, the conical platform is in an inverted cone shape, and the upper surface of the conical platform is provided with a groove for fixing the seed crystal; the lower surface of the conical table is matched with an inverted conical opening in the center of the bottom of the outer crucible.
4. The apparatus of claim 3, wherein the center of the lower bottom surface of the conical table has an opening.
5. The device as claimed in claim 1, wherein the top of the pull rod is provided with a threaded structure, the central small hole in the lower surface of the crucible cover is a threaded hole, and the inner crucible is connected to the crucible cover through the top of the pull rod and the threaded hole; the pull rod is higher than the upper surface of the inner crucible.
6. The apparatus of claim 1, wherein the crucible cover is in a T-shaped configuration, wherein the diameter of the cylinder on the upper surface of the crucible cover is the same as the outer diameter of the outer crucible and is larger than the diameter of the cylinder on the lower surface of the crucible cover.
7. The apparatus of claim 1 wherein the inner crucible is of a rounded truncated cone shape having an outer diameter at the upper end greater than an outer diameter at the bottom end.
8. The apparatus of claim 1, wherein the inner wall of the outer crucible at a distance from the opening at the upper portion of the outer crucible is uniformly inwardly tapered.
9. The apparatus of claim 3, wherein the center of the upper surface of the conical table has a recess with a diameter slightly smaller than the diameter of the upper surface of the conical table.
10. Use of the apparatus according to any one of claims 1 to 9 for the preparation of a silicon carbide single crystal, wherein the silicon carbide single crystal is grown in a forward direction on a seed platform of the apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911161658.XA CN111074347A (en) | 2019-11-22 | 2019-11-22 | Seed crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911161658.XA CN111074347A (en) | 2019-11-22 | 2019-11-22 | Seed crystal growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111074347A true CN111074347A (en) | 2020-04-28 |
Family
ID=70311737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911161658.XA Pending CN111074347A (en) | 2019-11-22 | 2019-11-22 | Seed crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111074347A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112126975A (en) * | 2020-09-18 | 2020-12-25 | 山东国晶电子科技有限公司 | Silicon carbide single crystal growth device |
| CN112831840A (en) * | 2020-12-30 | 2021-05-25 | 湖南三安半导体有限责任公司 | Single crystal growing device |
| CN114059156A (en) * | 2021-11-30 | 2022-02-18 | 江苏集芯半导体硅材料研究院有限公司 | Silicon carbide crystal growing device |
| CN114108094A (en) * | 2021-11-30 | 2022-03-01 | 江苏集芯半导体硅材料研究院有限公司 | Silicon carbide crystal growing device |
| CN114108096A (en) * | 2021-11-30 | 2022-03-01 | 江苏集芯半导体硅材料研究院有限公司 | Silicon carbide crystal growing device |
| CN114134571A (en) * | 2021-11-30 | 2022-03-04 | 江苏集芯半导体硅材料研究院有限公司 | Crucible assembly and single crystal growing apparatus having the same |
-
2019
- 2019-11-22 CN CN201911161658.XA patent/CN111074347A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112126975A (en) * | 2020-09-18 | 2020-12-25 | 山东国晶电子科技有限公司 | Silicon carbide single crystal growth device |
| CN112831840A (en) * | 2020-12-30 | 2021-05-25 | 湖南三安半导体有限责任公司 | Single crystal growing device |
| CN112831840B (en) * | 2020-12-30 | 2022-05-10 | 湖南三安半导体有限责任公司 | Single crystal growing device |
| CN114059156A (en) * | 2021-11-30 | 2022-02-18 | 江苏集芯半导体硅材料研究院有限公司 | Silicon carbide crystal growing device |
| CN114108094A (en) * | 2021-11-30 | 2022-03-01 | 江苏集芯半导体硅材料研究院有限公司 | Silicon carbide crystal growing device |
| CN114108096A (en) * | 2021-11-30 | 2022-03-01 | 江苏集芯半导体硅材料研究院有限公司 | Silicon carbide crystal growing device |
| CN114134571A (en) * | 2021-11-30 | 2022-03-04 | 江苏集芯半导体硅材料研究院有限公司 | Crucible assembly and single crystal growing apparatus having the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111074347A (en) | Seed crystal growth device | |
| CN206624942U (en) | A kind of device of physical carbon burdening growth carborundum crystals | |
| US9643342B2 (en) | Apparati for fabricating thin semiconductor bodies from molten material | |
| CN106400116B (en) | The method of high quality growing silicon carbice crystals oblique seed crystal support and growing silicon carbide crystal with high quality | |
| CN207193434U (en) | A kind of growth crucible for improving single-crystal silicon carbide quality | |
| JP2013212952A (en) | Method for manufacturing silicon carbide single crystal | |
| CN110983434B (en) | Growth method for effectively reducing defects of silicon carbide single crystal and high-quality silicon carbide single crystal | |
| CN107190322B (en) | A kind of growing method of the adjustable silicon carbide polycrystalline ceramics of large scale resistivity | |
| CN211713256U (en) | Seed crystal growth device | |
| CN208293118U (en) | A kind of SiC single crystal grower of reusable crucible | |
| CN207659559U (en) | Crucible cover and crucible | |
| WO2015122184A1 (en) | PRODUCTION METHOD FOR SiC SINGLE CRYSTALS | |
| JP5877589B2 (en) | Silicon ingot manufacturing container and silicon ingot manufacturing method | |
| CN215209697U (en) | Polycrystalline raw material for growth of silicon carbide single crystal | |
| CN214193528U (en) | Crucible support for crystal growth | |
| CN208071844U (en) | A kind of graphite electrode collet for silicon core to be clamped of zone melting and refining silicon production | |
| TWI588306B (en) | Apparatus and process for producing a single crystal of silicon | |
| CN214458452U (en) | Polycrystal growth furnace for gallium arsenide crystal production | |
| CN215593249U (en) | Heat preservation device for preparing high-quality silicon carbide crystals | |
| Hattori et al. | Solution growth of off-axis 4H-SiC for power device application | |
| Jacquier et al. | Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC? | |
| JPH04187585A (en) | Device of growing crystal | |
| RU2562486C1 (en) | METHOD OF PRODUCING MONOCRYSTALLINE SiC | |
| KR20210004468A (en) | Single crystal growth device and single crystal growth method of using the same | |
| JP2599306B2 (en) | Crystal manufacturing method and manufacturing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200528 Address after: 201499 Building 1, 5601 Yanqian Road, Fengxian District, Shanghai Applicant after: Shanghai Lianxing Business Consulting Center Address before: 313009 first floor, building 14, North Shiyuan West Road and West Nanxun Avenue, Nanxun Economic Development Zone, Huzhou City, Zhejiang Province Applicant before: Zhejiang dajinglei Semiconductor Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200428 |
|
| WD01 | Invention patent application deemed withdrawn after publication |