CN215209697U - Polycrystalline raw material for growth of silicon carbide single crystal - Google Patents
Polycrystalline raw material for growth of silicon carbide single crystal Download PDFInfo
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- CN215209697U CN215209697U CN202120267484.1U CN202120267484U CN215209697U CN 215209697 U CN215209697 U CN 215209697U CN 202120267484 U CN202120267484 U CN 202120267484U CN 215209697 U CN215209697 U CN 215209697U
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- silicon carbide
- single crystal
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Abstract
The utility model discloses a polycrystal raw materials for carborundum single crystal growth, include the cubic body that is formed by the suppression of likepowder polycrystal raw materials, set up the tube hole in cubic body along upper and lower direction, the top of cubic body is run through to the upper end of tube hole. The utility model relates to a polycrystal raw material for the growth of silicon carbide single crystal, which presses the powdery polycrystal raw material into massive polycrystal raw material, greatly improves the density of the raw material, and obviously increases the charging amount in crucibles with the same volume; the pore is arranged in the blocky polycrystalline raw material, so that the permeability of the raw material is improved, and the bottom raw material can be sublimated upwards smoothly through the pore in the crystal growth process, thereby being beneficial to the growth of large-size single crystals.
Description
Technical Field
The utility model relates to the technical field of artificial crystal growth, in particular to a polycrystalline raw material for silicon carbide single crystal growth.
Background
At present, a physical vapor transport method (PVT method) is a mainstream process technology for growing silicon carbide single crystals, and the technology is characterized in that a silicon carbide polycrystalline raw material is arranged at the bottom of a graphite crucible, a silicon carbide seed crystal sheet is adhered to a graphite seed crystal seat, the graphite seed crystal seat is arranged at the upper part of the graphite crucible, and the silicon carbide polycrystalline raw material at the bottom of the graphite crucible is heated to be sublimated, so that the silicon carbide single crystals grow on the silicon carbide seed crystals. The amount, utilization rate and charging form of the polycrystalline silicon carbide raw material charged into the graphite crucible directly influence the length of the grown silicon carbide single crystal. Under the same process parameters, the more raw materials are loaded, the higher the utilization rate of the raw materials is, the longer the silicon carbide single crystal grows, and the higher the production efficiency is.
In the prior art, powdery silicon carbide polycrystalline raw materials are generally directly filled into the bottom of a graphite crucible. The powder material is loose, so that the charging amount is less. Meanwhile, in the sublimation process of the raw material, because the bottom temperature of the raw material is higher than the top temperature of the raw material, a sintering hardened layer is easily formed on the top of the powdery raw material, and smooth sublimation of deep raw material and continuous growth of silicon carbide single crystal are prevented.
Disclosure of Invention
The utility model aims at providing a polycrystal raw materials for carborundum single crystal growth, the density is higher, and the permeability is better, and in the crystal growth process, the bottom raw materials can sublime smoothly.
In order to achieve the above purpose, the utility model adopts the technical scheme that:
a polycrystalline raw material for growing silicon carbide single crystals comprises a block body formed by pressing powdery polycrystalline raw materials and a pipe hole formed in the block body in the vertical direction, wherein the upper end of the pipe hole penetrates through the top of the block body.
Preferably, the block-shaped body has an outer peripheral portion circumferentially abutting against an inner peripheral portion of the crucible.
Preferably, the lower end of the pipe hole penetrates through the bottom of the block-shaped body.
Preferably, the pipe hole extends in a vertical direction.
Preferably, the pipe hole extends obliquely in an up-down direction.
Preferably, the pipe hole is a cylindrical hole or a conical hole.
More preferably, the cross-section of the cylindrical hole is circular, elliptical, or polygonal.
More preferably, the tapered hole is gradually opened from the bottom up.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage: the utility model relates to a polycrystal raw material for the growth of silicon carbide single crystal, which presses the powdery polycrystal raw material into massive polycrystal raw material, greatly improves the density of the raw material, and obviously increases the charging amount in crucibles with the same volume; the pore is arranged in the blocky polycrystalline raw material, so that the permeability of the raw material is improved, and the bottom raw material can be sublimated upwards smoothly through the pore in the crystal growth process, thereby being beneficial to the growth of large-size single crystals.
Drawings
FIG. 1 is a schematic view of a structure in which a polycrystalline raw material is placed in a graphite crucible.
Wherein: 1. a block-shaped body; 2. a tube hole; 3. a graphite crucible; 4. a graphite seed crystal base; 5. silicon carbide seed crystals; 6. a silicon carbide single crystal.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings.
Referring to fig. 1, a polycrystalline raw material for silicon carbide single crystal growth includes a block body 1 formed by pressing a powdery polycrystalline raw material, and a tube hole 2 vertically opened in the block body 1, wherein an upper end of the tube hole 2 penetrates through a top of the block body 1. When the crystal grows, the block body 1 is placed at the bottom of the graphite crucible 3. In this embodiment, the polycrystalline raw material is a silicon carbide polycrystal.
In the present embodiment, the block body 1 has an outer peripheral portion abutting against an inner peripheral portion of the graphite crucible 3 in the circumferential direction. Referring to fig. 1, the inner peripheral portion of the graphite crucible 3 is cylindrical, the block body 1 is also cylindrical, the diameters of the two are the same, and the cylindrical block body 1 is circumferentially abutted against the inner peripheral portion of the graphite crucible 3.
By pressing the powdery polycrystalline raw material into the massive polycrystalline raw material, the compactness of the raw material is greatly improved, and the charging amount is obviously increased in crucibles with the same volume. By providing the block-shaped body 1 in a shape so as to be circumferentially fitted to the inner peripheral portion of the graphite crucible 3, the amount of charge is further increased.
Referring to fig. 1, a silicon carbide seed crystal 5 is bonded to a graphite seed crystal holder 4, the graphite seed crystal holder 4 is covered on the top of a graphite crucible 3, and a silicon carbide single crystal 6 is grown from the silicon carbide seed crystal 5 in the heating sublimation process of the polycrystalline raw material.
In other embodiments, the lower end of the tube bore 2 extends through the bottom of the block body 1.
The pore 2 is arranged in the blocky polycrystalline raw material, and the pore 2 penetrates through the blocky raw material upwards, so that the permeability of the raw material is improved. In the process of crystal growth, the raw material at the bottom layer can be sublimated upwards smoothly through the pipe hole 2, which is beneficial to the growth of large-size single crystals. And the pore 2 is arranged and penetrates through the blocky raw materials downwards, so that the permeability of the raw materials is further improved. That is, even if the sinter-hardening layer is formed at the top of the block body 1 due to the temperature gradient, the raw material can be smoothly sublimated upward from the side wall of the tube hole 2.
In the present embodiment, the pipe holes 2 extend in the vertical direction. The pipe holes 2 are multiple and arranged at intervals.
In other embodiments, the pipe hole 2 extends obliquely in the up-down direction. The pipe holes 2 are arranged in parallel, or in a conical divergent mode from top to bottom, or in a conical contraction mode from top to bottom.
The pipe hole 2 is a cylindrical hole or a tapered hole. In the present embodiment, the pipe hole 2 is cylindrical.
When the pipe hole 2 is a cylindrical hole, the cross section of the cylindrical hole is circular, elliptical, or polygonal.
When the pipe hole 2 is a conical hole, the conical hole is gradually opened from bottom to top.
In actual production, the diameter, shape, number and distribution of the pipe holes 2 are designed according to the size and technological requirements of the block-shaped body 1.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (7)
1. A polycrystalline feedstock for single crystal growth of silicon carbide, comprising: the device comprises a block body formed by pressing powdery polycrystalline raw materials and a pipe hole formed in the block body along the vertical direction, wherein the upper end of the pipe hole penetrates through the top of the block body; the lower end of the pipe hole penetrates through the bottom of the block-shaped body.
2. A polycrystalline feedstock for single crystal growth of silicon carbide according to claim 1, wherein: the block-shaped body is provided with an outer circumference part which is abutted against the inner circumference part of the crucible along the circumferential direction.
3. A polycrystalline feedstock for single crystal growth of silicon carbide according to claim 1, wherein: the pipe hole extends in a vertical direction.
4. A polycrystalline feedstock for single crystal growth of silicon carbide according to claim 1, wherein: the pipe hole extends obliquely in the up-down direction.
5. A polycrystalline feedstock for single crystal growth of silicon carbide according to claim 1, wherein: the pipe hole is a cylindrical hole or a conical hole.
6. A polycrystalline feedstock for single crystal growth of silicon carbide according to claim 5, wherein: the cross section of the cylindrical hole is circular, oval or polygonal.
7. A polycrystalline feedstock for single crystal growth of silicon carbide according to claim 5, wherein: the taper hole is gradually opened from bottom to top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120267484.1U CN215209697U (en) | 2021-01-29 | 2021-01-29 | Polycrystalline raw material for growth of silicon carbide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120267484.1U CN215209697U (en) | 2021-01-29 | 2021-01-29 | Polycrystalline raw material for growth of silicon carbide single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215209697U true CN215209697U (en) | 2021-12-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202120267484.1U Active CN215209697U (en) | 2021-01-29 | 2021-01-29 | Polycrystalline raw material for growth of silicon carbide single crystal |
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| CN (1) | CN215209697U (en) |
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2021
- 2021-01-29 CN CN202120267484.1U patent/CN215209697U/en active Active
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Effective date of registration: 20230307 Address after: No. 8, Donglai Dongli Road, Yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province, 215000 Patentee after: JIANGSU XINGTELIANG TECHNOLOGY CO.,LTD. Address before: 716000 No.6, new material high tech Industrial Park, Baota District, Yan'an City, Shaanxi Province Patentee before: Yan'an xingteliang Technology Innovation Co.,Ltd. |