CN201990762U - Heating device of czochralski single crystal furnace - Google Patents
Heating device of czochralski single crystal furnace Download PDFInfo
- Publication number
- CN201990762U CN201990762U CN2011200439345U CN201120043934U CN201990762U CN 201990762 U CN201990762 U CN 201990762U CN 2011200439345 U CN2011200439345 U CN 2011200439345U CN 201120043934 U CN201120043934 U CN 201120043934U CN 201990762 U CN201990762 U CN 201990762U
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- crucible
- single crystal
- plumbago crucible
- silicon
- heating device
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Abstract
The utility model discloses a heating device of a czochralski single crystal furnace, which comprises a graphite crucible and a quartz crucible, wherein the quartz crucible is arranged in the graphite crucible. The heating device of the czochralski single crystal furnace is characterized in that a piece of graphite paper is positioned between the graphite crucible and the quartz crucible, and the outer surface of the graphite crucible is provided with strip-type grooves. The heating device of the czochralski single crystal furnace resolves the problems that the prior art has short service life and is insufficient in heating efficiency difference, and has the advantages of being simple in structure and easy to produce.
Description
Technical field
The utility model relates to a kind of during with vertical pulling method manufacture order crystal silicon, can improve the czochralski crystal growing furnace of thermal field of single crystal furnace pot life, belongs to the growing semiconductor crystal equipment technical field.
Background technology
World energy sources crisis has at present promoted the development in photovoltaic market, and crystal silicon solar energy battery is the leading product of photovoltaic industry, accounts for 90% of the market share.Under the pulling of world market, China's solar energy power generating industry development is rapid, and China's solar cell annual production develops into more than 10% of world's share by the l% that accounted for world's share originally.Compare with other crystal silicon solar energy battery, the transformation efficiency of monocrystaline silicon solar cell is higher, but its production cost is also high.Along with the further attention of countries in the world to the photovoltaic industry, particularly developed country has formulated a series of support policy, encourage development and use sun power, in addition, continuous expansion along with the silicon solar cell application surface, the demand of solar cell is increasing, and the demand of silicon single crystal material also just enlarges on year-on-year basis.Silicon single crystal is a kind of semiconductor material, and one is used to make unicircuit and other electron component, and the monocrystalline silicon growing technology has two kinds: zone melting method and vertical pulling method, wherein vertical pulling method is the method that generally adopts at present.In the method for Grown by CZ Method silicon single crystal; the high-purity polycrystalline raw material is put into the quartz crucible of monocrystal growing furnace; in rough vacuum heat fused under the slumpability gas shield is arranged then; the silicon single crystal (being called seed crystal) that the particular growth direction arranged is packed in the seed crystal clamping device; and seed crystal is contacted with silicon solution; adjust the temperature of molten silicon solution; make it near melting temperature; driving seed crystal then stretches in the fused silicon solution from top to bottom and rotation; upper lifting seed crystalline substance slowly then; then monocrystalline silicon body enters the growth of conical part; when the diameter of cone during near aimed dia; improve the pulling speed of seed crystal; the monocrystalline silicon body diameter is no longer increased and enter growth phase in the middle part of the crystalline, when finishing, improve the pulling speed of seed crystal again in the monocrystalline silicon body growth; monocrystalline silicon body breaks away from molten silicon gradually, forms lower cone and finishes growth.The silicon single crystal that grows out in this way, it is shaped as the tapered right cylinder in two ends, with this right cylinder section, promptly obtains the silicon single crystal raw semiconductor, and this circular single crystal silicon chip just can be used as the material of unicircuit or sun power.
Pulling single crystal silicon need carry out in a whole set of hot system; in pulling process, be in low vacuum state; and constantly in single crystal growing furnace, charge into inert protective gas to take away since the crystallization latent heat that monocrystalline silicon body distributes during crystallization from solution and the silicon monoxide particle of silicon solution evaporation from the venting port of single crystal growing furnace, discharge then by vacuum pump.The traditional thermal field component of single crystal growing furnace consists essentially of the furnace wall; well heater; thermal insulation layer; plumbago crucible; quartz crucible etc.; single crystal growing furnace is when discharging silicon monoxide by vacuum pump from venting port; the mixed gas of forming by silicon monoxide and the shielding gas parts such as plumbago crucible of will flowing through; because plumbago crucible is a graphite product; and temperature is more than 1420 degree in the stove; and non-stop run is more than 30 hours; the silicon monoxide impurity in the single crystal growing furnace and the oxygen of quartz crucible become the reaction of branch and plumbago crucible with silicon; generate carbon monoxide, carbonic acid gas, silicon carbide etc.; thereby cause erosion to plumbago crucible; simultaneously, the fosterization reaction of quartz crucible and plumbago crucible contact part makes Siliciumatom be penetrated into the top layer of plumbago crucible; form one deck silicon carbide layer; cause the crucible fracture, these all can reduce the life-span of plumbago crucible, increase production cost.In addition, at present, the crucible of use is because simple in structure, exist that heat transfer efficiency is low, heating slowly, heat-up time shortcoming such as length, energy consumption height.Therefore the utility model provides a kind of and is heated, heat-transfer effect is good and the czochralski crystal growing furnace heating unit of long service life.
The utility model content
The purpose of this utility model is to overcome the deficiency of prior art weak point in work-ing life, thermal efficiency difference, provides a kind of czochralski crystal growing furnace heating unit at this.
This use is novel to be to realize like this, construct a kind of czochralski crystal growing furnace heating unit, comprise plumbago crucible, quartz crucible, wherein quartz crucible is arranged in the plumbago crucible, it is characterized in that: add between described plumbago crucible and quartz crucible and be lined with graphite paper, the outside surface of wherein said plumbago crucible is formed with strip groove.
According to a kind of czochralski crystal growing furnace heating unit described in the utility model, it is characterized in that: described strip groove is for being arranged on the appearance of plumbago crucible at interval uniformly.
According to a kind of czochralski crystal growing furnace heating unit described in the utility model, it is characterized in that: the degree of depth of strip groove is 1-6mm.
Advantage of the present utility model is: at first add between plumbago crucible and quartz crucible and be lined with graphite paper, wherein graphite paper can prevent effectively that the oxygen of silicon monoxide impurity and quartz crucible from becoming the situation of branch and plumbago crucible reaction with silicon.Next also is formed with strip groove at the outside surface of described plumbago crucible, because the outside surface at plumbago crucible is formed with strip groove, therefore increased the appearance heating surface area of plumbago crucible body, so improve heat transfer area by increasing the plumbago crucible outer surface area, the outer surface area of plumbago crucible is doubled, reach the purpose that strengthens heat transfer capacity, rapid heating.
Description of drawings
Fig. 1 is the external structure synoptic diagram of plumbago crucible of the present utility model
Fig. 2 is a structural representation of the present utility model
Among the figure: 1, plumbago crucible, 2, quartz crucible, 3, graphite paper, 4, strip groove.
Embodiment
In order to overcome the deficiencies in the prior art, the utility model provides a kind of czochralski crystal growing furnace heating unit at this, has solved the insufficient problem of short, thermal efficiency difference in prior art work-ing life.As shown in Figure 2: this device comprises plumbago crucible 1, quartz crucible 2, wherein quartz crucible 2 is arranged in the plumbago crucible 1, add between described plumbago crucible 1 and quartz crucible 2 and be lined with graphite paper 3, wherein graphite paper 3 can prevent effectively that the oxygen of silicon monoxide impurity and quartz crucible 2 from becoming the situation of branch and plumbago crucible 1 reaction with silicon.Wherein also be formed with strip groove 4 at the outside surface of described plumbago crucible 1, because the outside surface at plumbago crucible 1 is formed with strip groove 4, therefore increased the appearance heating surface area of plumbago crucible 1 body, so improve heat transfer area by increasing plumbago crucible 1 outer surface area, the outer surface area of plumbago crucible is doubled, reach the purpose that strengthens heat transfer capacity, rapid heating.
One of improvement of the present utility model is that with described strip groove 4 be the appearance that is arranged on plumbago crucible 1 at interval uniformly, makes it attractive in appearance.Can be 1-6mm with the depth design of strip groove 4 described in the utility model wherein, purpose increases heating surface area, rapid heating for deepening depth of groove.
Claims (3)
1. czochralski crystal growing furnace heating unit, comprise plumbago crucible (1), quartz crucible (2), wherein quartz crucible (2) is arranged in the plumbago crucible (1), it is characterized in that: add between described plumbago crucible (1) and quartz crucible (2) and be lined with graphite paper (3), the outside surface of wherein said plumbago crucible (1) is formed with strip groove (4).
2. according to the described a kind of czochralski crystal growing furnace heating unit of claim 1, it is characterized in that: described strip groove (4) is for being arranged on the appearance of plumbago crucible (1) at interval uniformly.
3. a kind of czochralski crystal growing furnace heating unit according to claim 1 is characterized in that: the degree of depth of strip groove (4) is 1-6mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200439345U CN201990762U (en) | 2011-02-22 | 2011-02-22 | Heating device of czochralski single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200439345U CN201990762U (en) | 2011-02-22 | 2011-02-22 | Heating device of czochralski single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201990762U true CN201990762U (en) | 2011-09-28 |
Family
ID=44667256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200439345U Expired - Lifetime CN201990762U (en) | 2011-02-22 | 2011-02-22 | Heating device of czochralski single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201990762U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104911695A (en) * | 2015-06-04 | 2015-09-16 | 宁晋晶兴电子材料有限公司 | Silicon heating crucible with graphite paper interlayer |
| CN105543964A (en) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | Method and device for eliminating corrosion of silicon to graphite body in silicon carbide single crystal growth process |
-
2011
- 2011-02-22 CN CN2011200439345U patent/CN201990762U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104911695A (en) * | 2015-06-04 | 2015-09-16 | 宁晋晶兴电子材料有限公司 | Silicon heating crucible with graphite paper interlayer |
| CN105543964A (en) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | Method and device for eliminating corrosion of silicon to graphite body in silicon carbide single crystal growth process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110928 |