CN102433585B - Thermal field structure of quasi-monocrystal ingot furnace - Google Patents
Thermal field structure of quasi-monocrystal ingot furnace Download PDFInfo
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- CN102433585B CN102433585B CN201110404818.6A CN201110404818A CN102433585B CN 102433585 B CN102433585 B CN 102433585B CN 201110404818 A CN201110404818 A CN 201110404818A CN 102433585 B CN102433585 B CN 102433585B
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Abstract
The invention relates to a thermal field structure of a quasi-monocrystal ingot furnace, which comprises an upper heat-preserving furnace body and a lower heat-preserving furnace body which are vertically matched with each other. A group of supporting rods is arranged at the internal bottom of the lower heat-preserving furnace body. A crucible is arranged on the supporting rods. An air inlet pipe is arranged above the crucible. A movable thermal field chamber is arranged outside the crucible. The bottom of the crucible is an inverted-truncated-pyramid chamber body structure. A storage container is arranged at the lower end of the inverted-truncated-pyramid chamber body structure. Seed crystals are arranged in the storage container. A directional seed growth block is arranged at the bottom of the storage container. A heating assembly, an upper temperature sensor, a lower temperature sensor and the like are arranged in the movable thermal field chamber. By adopting the structural arrangement, the crystal growth effect can be obviously improved; and in the crystal guide process, the seed crystals can be always kept in a cooling area, the seed crystals are prevented from being melted and the yield of cast quasi-monocrystals is improved. By using the thermal field structure of the quasi-monocrystal ingot furnace for casting the quasi-monocrystals, the yield can reach 95 to 100 percent.
Description
Technical field
The present invention relates to a kind of photovoltaic solar cell production field, especially a kind of accurate single-crystal ingot casting furnace thermal field structure.
Background technology
Energy problem is one of hot issue maximum in the world today.A large amount of uses of traditional energy, cause world energy sources store content sharply to decline, and problem of environmental pollution are on the rise, and the development of human society is formed to serious harm, and emerging pollution-free energy source have just become the inexorable trend of energy technology development.Sun power is one of green energy resource of permanence, and in sun power utilizes, photovoltaic cell is current topmost a kind of product, and silicon crystal is the base mateiral that photovoltaic cell is produced.Silicon crystal comprises single crystal, polycrystal, single crystal is that from multicrystal difference their atomic structure arrangement is different, it is that nucleus grows up to the ordered arrangement that high preferred orientation is identical that the atomic structure of single crystal is arranged, and multicrystal atomic structure to arrange be that nucleus grows up to the different lack of alignment of high preferred orientation, both are determined by their complete processing.In practical application, monocrystalline silicon battery photoelectric conversion rate is compared with Gao Keda 14%～17%, and polycrystal silicon cell efficiency of conversion is only 12%～14%.Therefore, monocrystalline will be the staple product material that photovoltaic solar utilizes from now on.But at photovoltaic, cast accurate monocrystalline at present, accurate monocrystalline yield is on the low side 50%, and the crucible bottom in ingot furnace is flat-bottom structure at present, and in production process, crucible bottom seed crystal melts and controls difficulty, temperature controlled quality also can directly affect long brilliant efficiency, and easily causes the wasting of resources.
Summary of the invention
The present invention will solve the shortcoming of above-mentioned prior art, and the accurate single-crystal ingot casting furnace thermal field structure of the high and energy-conserving and environment-protective of a kind of brilliant efficiency rational in infrastructure, long is provided, and meets the need of market.
The present invention solves the technical scheme that its technical problem adopts: this accurate single-crystal ingot casting furnace thermal field structure, comprise the upper thermal insulation furnace body of upper and lower joint match, lower thermal insulation furnace body, lower thermal insulation furnace body inner bottom part is provided with one group of support bar, support bar is provided with crucible, crucible top is provided with inlet pipe, crucible is provided with movable thermal field chamber outward, activity heat is robbed and in chamber, is provided with heating component, movable thermal field chamber comprises thermal baffle, lower thermal baffle, on this, thermal baffle, the outer airtight movable sleeve of lower thermal baffle are connected to collet body, are connected with one group of lifting rod on heat insulation body; Heating component comprises hot-plate, side hot-plate, and upper hot-plate is located between thermal baffle and crucible, and side hot-plate is located at crucible outside; In upper thermal baffle, be equipped with temperature sensor, in lower thermal baffle, be equipped with lower temperature sensor; Crucible bottom is is inverted terrace with edge cavity configuration, is inverted terrace with edge cavity configuration lower end and is provided with storage vessel, in this storage vessel, is provided with seed crystal, and storage vessel bottom is provided with directional long crystal piece.Like this, like this, by the setting of movable thermal field chamber, during use, thermal field can be divided into cold missing plot, gradient zones, San Ge region, heating zone, by orientation, at the uniform velocity control heat insulation body.By two hot-plates and two temperature sensors, crucible is carried out to heat temperature raising detection, the temperature in thermal field is effectively controlled, effectively control the vertical temperature gradient of thermal field, guarantee long brilliant process orientation at the uniform velocity.Because being, crucible bottom is inverted terrace with edge cavity configuration, and in inversion terrace with edge cavity configuration lower end, storage vessel is set, in storage vessel, place again seed crystal, make seed crystal always in cooling zone, effectively avoid the situation that seed crystal melts in seeding process to occur, thereby improved the accurate monocrystalline yield of casting accurate monocrystalline.
Further, upper temperature sensor, lower temperature sensor are separate thermopair.The independent temperature of controlling each region is convenient in the separate setting of temperature sensor, in having reduced production process, in waste of energy, has also improved accurate monocrystalline yield.
The effect that the present invention is useful is: of the present invention rational in infrastructure, compact, and by the setting at movable thermal field chamber, and arrange and be inverted terrace with edge cavity configuration in crucible bottom, can obviously improve long brilliant effect; In inversion terrace with edge cavity configuration lower end, storage vessel is set, then places seed crystal in storage vessel, in seeding process, seed crystal can avoid seed crystal to melt always in cooling zone, thereby has improved the accurate monocrystalline yield of casting.Adopt ingot furnace thermal field structure of the present invention to cast accurate monocrystalline, yield can reach 95%～100%.Cost of the present invention is reasonable, and accurate monocrystalline yield is high, easy to operate, and result of use is good, is worthy to be popularized.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention while analysing and observe.
Description of reference numerals: upper thermal insulation furnace body 1, lower thermal insulation furnace body 2, support bar 3, crucible 4, inlet pipe 5, movable thermal field chamber 6, heating component 7, upper thermal baffle 8, lower thermal baffle 9, heat insulation body 10, lifting rod 11, upper hot-plate 12, side hot-plate 13, upper temperature sensor 14, lower temperature sensor 15, is inverted terrace with edge cavity configuration 16, storage vessel 17, directional long crystal piece 18, seed crystal 19.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
With reference to accompanying drawing: this accurate single-crystal ingot casting furnace thermal field structure in the present embodiment, the upper thermal insulation furnace body 1, the lower thermal insulation furnace body 2 that comprise upper and lower joint match, lower thermal insulation furnace body 2 inner bottom parts are provided with one group of support bar 3, support bar 3 is provided with crucible 4, crucible 4 tops are provided with inlet pipe 5, outside crucible 4, be provided with movable thermal field chamber 6, activity heat is robbed and in chamber 6, is provided with heating component 7, movable thermal field chamber 6 comprises thermal baffle 8, lower thermal baffle 9, on this, thermal baffle 8, the outer airtight movable sleeve of lower thermal baffle 9 are connected to collet body 10, are connected with one group of lifting rod 11 on heat insulation body 10; Heating component 7 comprises hot-plate 12, side hot-plate 13, and upper hot-plate 12 is located between thermal baffle 8 and crucible 4, and side hot-plate 13 is located at crucible 4 outsides; In upper thermal baffle 8, be equipped with temperature sensor 14, in lower thermal baffle 9, be equipped with lower temperature sensor 15; Crucible 4 bottoms are is inverted terrace with edge cavity configuration 16, is inverted terrace with edge cavity configuration 16 lower ends and is provided with storage vessel 17, is provided with seed crystal 19 in this storage vessel, and storage vessel 17 bottoms are provided with directional long crystal piece 18.Upper temperature sensor 14, lower temperature sensor 15 are separate thermopair.
When the present invention uses, in the process that heat insulation body 9 promotes at lifting rod 10, under the effect in heat insulation body 9, heat insulation loop 12 etc., the divided cold missing plot of thermal field, gradient zones, San Ge region, heating zone, the heating heat radiation of hot-plate 13, side hot-plate 14 on controlling under the transducing signal of upper temperature sensor 15, lower temperature sensor 16, make silicon energy crystallographic orientation, crystallization and freezing process is effectively controlled, thereby improve accurate monocrystalline yield.Because crucible 4 bottoms are, be inverted terrace with edge cavity configuration 16, can obviously improve long brilliant effect.In inversion terrace with edge cavity configuration 16 lower ends, storage vessel 17 is set, again at the interior placement seed crystal 19 of storage vessel 17, make seed crystal 19 always in cooling zone, effectively avoided the situation that seed crystal 19 melts in seeding process to occur, thereby further improved the accurate monocrystalline yield of casting accurate monocrystalline.Adopt ingot furnace thermal field structure of the present invention to cast accurate monocrystalline, yield can reach 95%～100%.
Although the present invention illustrates and describes by reference to preferred embodiment,, those skilled in the art should understand, and in the scope of claims, can do the various variation in form and details.
Claims (1)
1. an accurate single-crystal ingot casting furnace, the upper thermal insulation furnace body (1) that comprises upper and lower joint match, lower thermal insulation furnace body (2), described lower thermal insulation furnace body (2) inner bottom part is provided with one group of support bar (3), described support bar (3) is provided with crucible (4), described crucible (4) top is provided with inlet pipe (5), the outer movable thermal field chamber (6) that is provided with of described crucible (4), in described movable thermal field chamber (6), be provided with heating component (7), it is characterized in that: described movable thermal field chamber (6) comprises thermal baffle (8), lower thermal baffle (9), thermal baffle on this (8), the outer airtight movable sleeve of lower thermal baffle (9) is connected to collet body (10), on described heat insulation body (10), be connected with one group of lifting rod (11), described heating component (7) comprises hot-plate (12), side hot-plate (13), and described upper hot-plate (12) is located between thermal baffle (8) and crucible (4), and described side hot-plate (13) is located at crucible (4) outside, in described upper thermal baffle (8), be equipped with temperature sensor (14), in described lower thermal baffle (9), be equipped with lower temperature sensor (15), described crucible (4) bottom is is inverted terrace with edge cavity configuration (16), described inversion terrace with edge cavity configuration (16) lower end is provided with storage vessel (17), in this storage vessel, be provided with seed crystal (19), described storage vessel (17) bottom is provided with directional long crystal piece (18), described upper temperature sensor (14), lower temperature sensor (15) are separate thermopair.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110404818.6A CN102433585B (en) | 2011-12-08 | 2011-12-08 | Thermal field structure of quasi-monocrystal ingot furnace |
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| CN201110404818.6A CN102433585B (en) | 2011-12-08 | 2011-12-08 | Thermal field structure of quasi-monocrystal ingot furnace |
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| CN102433585A CN102433585A (en) | 2012-05-02 |
| CN102433585B true CN102433585B (en) | 2014-01-29 |
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| CN102703968B (en) * | 2012-06-05 | 2015-02-04 | 湖南红太阳光电科技有限公司 | Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process |
| CN102766901B (en) * | 2012-08-20 | 2015-09-30 | 元亮科技有限公司 | The device and method of real-time, tunable Growth by Temperature Gradient Technique large size high temperature crystal |
| CN109321975B (en) * | 2018-11-19 | 2020-09-08 | 永平县泰达废渣开发利用有限公司 | Monocrystalline silicon directional solidification seeding module |
| CN109576786A (en) * | 2018-12-31 | 2019-04-05 | 霍焕金 | The cooling system and method for one type monocrystalline silicon cast ingot furnace |
| CN112680785B (en) * | 2020-11-30 | 2022-11-04 | 晶科能源股份有限公司 | Novel single crystal furnace |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906657A (en) * | 2010-07-08 | 2010-12-08 | 王敬 | System for manufacturing single crystal ingot |
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0316988A (en) * | 1989-06-14 | 1991-01-24 | Hitachi Cable Ltd | Production device of single crystal of compound semiconductor |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906657A (en) * | 2010-07-08 | 2010-12-08 | 王敬 | System for manufacturing single crystal ingot |
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
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| Title |
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| JP平3-16988A 1991.01.24 |
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Inventor after: Zhang Lixin Inventor after: Wang Yuli Inventor before: Pan Song |