CN202347125U

CN202347125U - Thermal field control device for casting mono-crystal

Info

Publication number: CN202347125U
Application number: CN201120505577XU
Authority: CN
Inventors: 潘颂
Original assignee: 潘颂
Current assignee: Zhejiang Lvgu Photovoltaic Technology Co., Ltd.
Priority date: 2011-12-08
Filing date: 2011-12-08
Publication date: 2012-07-25
Anticipated expiration: 2021-12-08

Abstract

The utility model provides a thermal field control device for casting a mono-crystal. The thermal field control device comprises an upper heat-preservation furnace body and a lower heat-preservation furnace body which are matched up and down, wherein a group of supporting rods are arranged at the bottom of the lower heat-preservation furnace body; a crucible is arranged above the supporting rods; an air inlet pipe is arranged above the crucible and an movable thermal field cavity is arranged outside the crucible; the movable thermal field cavity is internally provided with a heating assembly; a heat-insulating ring is arranged on the inner wall of a heat-insulting sleeve of the movable thermal field cavity, heating plates are respectively arranged above the crucible and at the side edge, and temperature sensors are respectively arranged above the crucible and at the bottom of the crucible, so that a thermal field can be divided into three regions, namely, a cooling region, a gradient region and a heating region when the thermal field control device is used; and therefore, the low cost and low power consumption are realized, the mono-crystal production with a high mono-crystal yield is realized and the mono-crystal casting yield can reach to 95-100%. The thermal field control device for casting the mono-crystal, disclosed by the utility model, has the advantages of reasonable cost, high efficiency and good use effect, and is worth being popularized.

Description

The thermal field gear of casting single crystal

Technical field

The utility model relates to a kind of photovoltaic solar cell production field, especially a kind of thermal field gear of casting single crystal.

Background technology

Energy problem is one of hot issue maximum in the world today.A large amount of uses of traditional energy cause the world energy sources store content sharply to descend, and problem of environmental pollution are on the rise, and development of human society is constituted serious harm, and emerging pollution-free energy source have just become the inexorable trend of energy technology development.Sun power is one of green energy resource of permanence, and in sun power utilized, photovoltaic cell was present topmost a kind of product, and silicon crystal is the base mateiral that photovoltaic cell is produced.Silicon crystal comprises single crystal, polycrystal; Single crystal is that with multicrystal difference their atomic structure arrangement is different; It is that nucleus grows up to the identical ordered arrangement of high preferred orientation that the atomic structure of single crystal is arranged; And multicrystal atomic structure to arrange be that nucleus grows up to the different lack of alignment of high preferred orientation, both mainly are by their complete processing decision.In the practical application, the monocrystalline silicon battery photoelectric conversion rate is higher to reach 14%～17%, and the polycrystal silicon cell efficiency of conversion is merely 12%～14%.Therefore, monocrystalline will be the staple product material of photovoltaic solar utilization from now on.But at present at the photovoltaic casting single crystal, the monocrystalline yield is on the low side 50%, the young brilliant control difficulty of melting of crucible bottom in production process, and temperature controlled quality directly influences long brilliant efficient, and is prone to cause the wasting of resources.

Summary of the invention

The utility model will solve the shortcoming of above-mentioned prior art, provide a kind of in production process crucible bottom young brilliant to melt control convenient, the monocrystalline yield is high, and the thermal field gear of the casting single crystal of energy-conserving and environment-protective, meets the need of market.

The utility model solves the technical scheme that its technical problem adopts: the thermal field gear of this casting single crystal; Comprise the last thermal insulation furnace body of the coupling of coincideing up and down, following thermal insulation furnace body, following thermal insulation furnace body inner bottom part is provided with one group of support bar, and support bar is provided with crucible; The crucible top is provided with inlet pipe; Crucible is provided with movable thermal field chamber outward, is provided with heating component in the movable thermal field chamber, and movable thermal field chamber comprises thermal baffle, following thermal baffle; Airtight movable sleeve was connected to the collet body outside should going up on thermal baffle, the following thermal baffle, was connected with one group of lifting rod on the heat insulation body; Crucible bottom is provided with the directional long crystal piece, is fixed with heat insulation loop on the heat insulation body inwall, and this heat insulation loop slip cap is located at outside the crucible bottom.Like this, through the setting of movable thermal field chamber, and on the heat insulation body inwall of movable thermal field chamber, heat insulation loop is set; Can thermal field be divided into cold missing plot, gradient zones, three zones, heating zone during use, at the uniform velocity control heat insulation body through orientation, when heat insulation loop moves to territory, young crystalline region; Make young crystalline substance be in gradient zones; Overheated when avoiding young brilliant the thawing guarantees that the young crystalline substance of seeding process does not melt, thereby improves the monocrystalline yield of casting single crystal.

Further, heating component comprises hot-plate, side hot-plate, and last hot-plate is located between thermal baffle and the crucible, and the side hot-plate is located at the crucible outside.Be equipped with TP in the last thermal baffle, be equipped with down TP in the following thermal baffle.Hot-plate heating heat radiation is gone up in its control of last temperature Chang'an; The heating heat radiation of following TP side hot-plate; Like this, through two hot-plates and two TPs crucible is carried out heat temperature raising and detect, the temperature in the thermal field is effectively controlled; Effectively the vertical temperature gradient of control thermal field guarantees long brilliant process orientation at the uniform velocity.

Last TP, following TP are separate thermopair.Separate control easy to use.

The effect that the utility model is useful is: the utility model rational in infrastructure, compact; Through on the heat insulation body inwall of movable thermal field chamber, heat insulation loop being set; And above crucible, hot-plate is set respectively with side, simultaneously above crucible with the bottom TP is set respectively, can thermal field be divided into cold missing plot, gradient zones, three zones, heating zone during use; Can realize the monocrystalline production of low cost, low power consumption, high monocrystalline yield, the casting single crystal yield can reach 95%～100%.The utility model cost is reasonable, and efficient is high, and result of use is good, is worthy to be popularized.

Description of drawings

Structural representation when Fig. 1 analyses and observe for the utility model;

Structural representation when Fig. 2 analyses and observe for the utility model;

Structural representation when Fig. 3 analyses and observe for the utility model.

Description of reference numerals: go up thermal insulation furnace body 1, following thermal insulation furnace body 2, support bar 3, crucible 4, movable thermal field chamber 5; Heating component 6, last thermal baffle 7, following thermal baffle 8, heat insulation body 9; Lifting rod 10, directional long crystal piece 11, heat insulation loop 12, last hot-plate 13; Side hot-plate 14, last TP 15, following TP 16, inlet pipe 17.

Embodiment

Below in conjunction with accompanying drawing the utility model is described further:

With reference to accompanying drawing: the thermal field gear of this casting single crystal in the present embodiment; Comprise the last thermal insulation furnace body 1 of the coupling of coincideing up and down, following thermal insulation furnace body 2, following thermal insulation furnace body 2 inner bottom parts are provided with one group of support bar 3, and support bar 3 is provided with crucible 4; Crucible 4 tops are provided with inlet pipe 17; Be provided with movable thermal field chamber 5 outside the crucible 4, be provided with heating component 6 in the movable thermal field chamber 5, movable thermal field chamber 5 comprises thermal baffle 7, following thermal baffle 8; Airtight movable sleeve was connected to collet body 9 outside should going up on thermal baffle 7, the following thermal baffle 8, was connected with one group of lifting rod 10 on the heat insulation body 9; Crucible 4 bottoms are provided with directional long crystal piece 11, are fixed with heat insulation loop 12 on heat insulation body 9 inwalls, and these heat insulation loop 12 slip caps are located at outside crucible 4 bottoms.Heating component 6 comprises hot-plate 13, side hot-plate 14, and last hot-plate 13 is located between thermal baffle 7 and the crucible 4, and side hot-plate 14 is located at crucible 4 outsides.Be equipped with TP 15 in the last thermal baffle 7, be equipped with down TP 16 in the following thermal baffle 8.Last TP 15, TP 16 is separate thermopair down.

When the utility model used, heat insulation body 9 was in the process that lifting rod 10 promotes, because under the effect of heat insulation body 9, heat insulation loop 12 etc.; Thermal field is cut apart cold missing plot, gradient zones, three zones, heating zone, in last TP 15, the transducing signal heating heat radiation of hot-plate 13, side hot-plate 14 in the control down of TP 16 down, makes silicon ability crystallographic orientation; The crystallization and freezing process is effectively controlled, thereby improves the monocrystalline yield, and whole technological process controllability is strong; Consuming time few; Effectively cut down the consumption of energy, practiced thrift the resources of production, improved unit and can produce.

Though the utility model is through illustrating and describe with reference to preferred embodiment,, those skilled in the art should understand, and in the scope of claims, can do the various variation on form and the details.

Claims

1. the thermal field gear of a casting single crystal; Comprise the last thermal insulation furnace body (1) of the coupling of coincideing up and down, following thermal insulation furnace body (2); Said thermal insulation furnace body (2) inner bottom part down is provided with one group of support bar (3); Said support bar (3) is provided with crucible (4), and said crucible (4) top is provided with inlet pipe (17), the outer movable thermal field chamber (5) that is provided with of said crucible (4); Be provided with heating component (6) in the said movable thermal field chamber (5); It is characterized in that: said movable thermal field chamber (5) comprises thermal baffle (7), following thermal baffle (8), and thermal baffle on this (7), following thermal baffle (8) are gone up outer airtight movable sleeve and be connected to collet body (9), are connected with one group of lifting rod (10) on the said heat insulation body (9); Said crucible (4) bottom is provided with directional long crystal piece (11), is fixed with heat insulation loop (12) on said heat insulation body (9) inwall, and this heat insulation loop (12) slip cap is located at outside crucible (4) bottom.

2. the thermal field gear of casting single crystal according to claim 1; It is characterized in that: said heating component (6) comprises hot-plate (13), side hot-plate (14); The said hot-plate (13) of going up is located between thermal baffle (7) and the crucible (4), and said side hot-plate (14) is located at crucible (4) outside.

3. the thermal field gear of casting single crystal according to claim 1 is characterized in that: be equipped with TP (15) in the said last thermal baffle (7), be equipped with down TP (16) in the said following thermal baffle (8).

4. the thermal field gear of casting single crystal according to claim 3 is characterized in that: saidly go up TP (15), TP (16) is separate thermopair down.