CN204251762U - A kind of thermal field structure of single crystal furnace - Google Patents
A kind of thermal field structure of single crystal furnace Download PDFInfo
- Publication number
- CN204251762U CN204251762U CN201420733607.6U CN201420733607U CN204251762U CN 204251762 U CN204251762 U CN 204251762U CN 201420733607 U CN201420733607 U CN 201420733607U CN 204251762 U CN204251762 U CN 204251762U
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- Prior art keywords
- crucible
- lower hearth
- plumbago crucible
- single crystal
- furnace
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Abstract
The utility model discloses a kind of can realize plumbago crucible lift velocity and the thermal field structure of single crystal furnace that individually controls of speed of rotation.This thermal field structure of single crystal furnace comprises upper furnace, lower hearth, upper furnace top is provided with seed crystal and rotates and upgrades mechanism, heat-preservation cylinder is provided with in lower hearth, plumbago crucible is provided with in heat-preservation cylinder, quartz crucible is provided with in plumbago crucible, plumbago crucible arranged outside having heaters, crucible rotation lifting body is provided with bottom plumbago crucible, plumbago crucible and crucible rotation lifting body are provided with circular graphite supporting plate, and crucible rotation lifting body is made up of turning axle, swing pinion, base, drive-motor, driving gear, lifting device.This crucible rotation lifting body can realize the lift velocity of plumbago crucible and speed of rotation individually controls, and the two controls separately to bring great convenience to the state modulator of crystal pulling technique.Be adapted at monocrystalline production unit field to apply.
Description
Technical field
The utility model relates to monocrystalline production unit field, especially a kind of thermal field structure of single crystal furnace.
Background technology
21 century, world energy sources crisis facilitates the development of photovoltaic market, and crystal silicon solar energy battery is the leading product of photovoltaic industry.Along with countries in the world are to the further attention of solar photovoltaic industry, particularly developed country has formulated a series of support policy, encourage to develop sun power, in addition, along with the continuous expansion of silicon solar cell application surface, the demand of solar cell is increasing, and the demand of silicon single crystal material is also just increasing.
Silicon single crystal is a kind of semiconductor material, and be generally used for and manufacture unicircuit and other electronic components, monocrystalline silicon growing technology has two kinds: one is zone melting method, and another kind is vertical pulling method, and wherein vertical pulling method makes the current method generally adopted.
The method of monocrystalline growth with czochralski silicon is as follows: the quartz crucible highly purified polycrystalline silicon raw material being put into single crystal growing furnace, then heat fused under the protection of slumpability gas is had in rough vacuum, the silicon single crystal in particular growth direction (being also called seed crystal) is had to load in seed crystal clamping device one, and seed crystal is contacted with silicon solution, the temperature of adjustment molten silicon solution, make it close to melting temperature, then seed crystal is driven to stretch in the silicon solution of melting and to rotate from top to bottom, then slowly upper lifting seed is brilliant, now, silicon single crystal enters the growth of conical part, when the diameter of cone is close to aimed dia, improve the pulling speed of seed crystal, monocrystalline silicon body diameter is made no longer to increase and enter the middle part growth phase of crystal, at the end of monocrystalline silicon body growth is close, improve the pulling speed of seed crystal again, monocrystalline silicon body departs from molten silicon gradually, form lower cone and terminate growth.The silicon single crystal grown out in this way, its shape is two sections of tapered right cylinders, is cut into slices by this right cylinder, namely obtains single-crystal semiconductor raw material, and this circular single crystal silicon chip just can as the material of unicircuit or sun power.
Pulling single crystal silicon generally carries out in single crystal growing furnace, at present, the single crystal growing furnace used comprises upper furnace, lower hearth, upper furnace is arranged on above lower hearth and upper furnace is fixed on lower hearth top by segregaion valve, described upper furnace top is provided with seed crystal and rotates and upgrades mechanism, heat-preservation cylinder is provided with in described lower hearth, plumbago crucible is provided with in described heat-preservation cylinder, quartz crucible is provided with in described plumbago crucible, plumbago crucible arranged outside having heaters, well heater is positioned at heat-preservation cylinder, described well heater is fixed on bottom lower hearth by heating electrode, the top of lower hearth is connected with tunger tube, described tunger tube extend in lower hearth through lower hearth, the bottom of described lower hearth is provided with vacuum pumping port, described vacuum pumping port is connected with delivery pipe, delivery pipe end is connected with vacuum pump, the import of vacuum pump is connected with the outlet of delivery pipe, seed crystal clamping device is provided with above described quartz crucible, described seed crystal clamping device rotates and upgrades mechanism by transmission rod and seed crystal and is connected, crucible rotation lifting body is provided with bottom described plumbago crucible, described plumbago crucible and crucible rotation lifting body are provided with circular graphite supporting plate, there is following problem in actual use in this thermal field structure of single crystal furnace: in crystal pulling process, crucible need rotate and keep certain speed to rise, the crucible rotation jacking apparatus of existing thermal field structure of single crystal furnace is all realize by a crucible shaft, crucible shaft can make crucible rise and rotate in the process of rotating simultaneously, but there is a problem in this crucible rotation jacking apparatus, namely the speed of rotation of crucible is limited to the lift velocity of crucible, if the speed of rotation of crucible is accelerated to cause the lift velocity of crucible to be accelerated, the two can not separate and controls separately, sometimes, the speed of rotation accelerating crucible is needed still not increase the lift velocity of crucible, existing thermal field structure of single crystal furnace just cannot realize above-mentioned functions, this state modulator for crystal pulling technique is very inconvenient.
Utility model content
Technical problem to be solved in the utility model be to provide a kind of can realize plumbago crucible lift velocity and speed of rotation individually control thermal field structure of single crystal furnace.
The utility model solves the technical scheme that its technical problem adopts: this thermal field structure of single crystal furnace, comprise upper furnace, lower hearth, upper furnace is arranged on above lower hearth and upper furnace is fixed on lower hearth top by segregaion valve, described upper furnace top is provided with seed crystal and rotates and upgrades mechanism, heat-preservation cylinder is provided with in described lower hearth, plumbago crucible is provided with in described heat-preservation cylinder, quartz crucible is provided with in described plumbago crucible, plumbago crucible arranged outside having heaters, well heater is positioned at heat-preservation cylinder, described well heater is fixed on bottom lower hearth by heating electrode, the top of lower hearth is connected with tunger tube, described tunger tube extend in lower hearth through lower hearth, the bottom of described lower hearth is provided with vacuum pumping port, described vacuum pumping port is connected with delivery pipe, delivery pipe end is connected with vacuum pump, the import of vacuum pump is connected with the outlet of delivery pipe, seed crystal clamping device is provided with above described quartz crucible, described seed crystal clamping device rotates and upgrades mechanism by transmission rod and seed crystal and is connected, crucible rotation lifting body is provided with bottom described plumbago crucible, described plumbago crucible and crucible rotation lifting body are provided with circular graphite supporting plate, described crucible rotation lifting body comprises the turning axle be fixed on bottom graphite supporting plate, described turning axle is fixed with swing pinion, base is provided with bottom described turning axle, described turning axle is fixed on base by bearing, described base is provided with drive-motor, the output shaft of described drive-motor is provided with driving gear, described driving gear and swing pinion intermesh, the lifting device for making base move up and down is provided with below described base.
Further, described lifting device is hydraulic cylinder.
Further, between described heat-preservation cylinder and the inwall of lower hearth, be provided with insulation quilt, the inwall of described heat-preservation cylinder scribble thermal radiation reflecting layer.
The beneficial effects of the utility model are: the working process of the crucible rotation lifting body of this thermal field structure of single crystal furnace is as follows: the rotation of plumbago crucible controls by drive-motor, concrete, drive-motor makes the driving gear be arranged on output shaft rotate, driving gear can rotate by driven rotary gear, because swing pinion is fixing on the rotary shaft, thus can rotate by driven rotary axle, turning axle is fixed on bottom graphite supporting plate, thus graphite supporting plate can be driven to rotate, plumbago crucible is placed on graphite pallet, the rotation of graphite supporting plate can drive plumbago crucible to rotate, because turning axle is fixed on base by bearing, thus when turning axle rotates, base is motionless, moving up and down of base is realized by lifting device, can driven rotary axially move when base moves up, and then graphite supporting plate can be driven to rise, thus realize the rising of plumbago crucible, therefore, lift velocity and the speed of rotation of plumbago crucible individually control, its lift velocity and speed of rotation control respectively by drive-motor and lifting device, the two controls separately to bring great convenience to the state modulator of crystal pulling technique.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model thermal field structure of single crystal furnace;
Be labeled as in figure: upper furnace 1, lower hearth 2, segregaion valve 3, seed crystal rotates and upgrades mechanism 4, heat-preservation cylinder 5, plumbago crucible 6, quartz crucible 7, well heater 8, heating electrode 9, tunger tube 10, vacuum pumping port 11, delivery pipe 12, vacuum pump 13, seed crystal clamping device 14, transmission rod 15, crucible rotation lifting body 16, turning axle 161, swing pinion 162, base 163, drive-motor 164, driving gear 165, lifting device 166, graphite supporting plate 17, insulation quilt 30, thermal radiation reflecting layer 31.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further illustrated.
As shown in Figure 1, this thermal field structure of single crystal furnace, comprise upper furnace 1, lower hearth 2, upper furnace 1 is arranged on above lower hearth 2 and upper furnace 1 is fixed on lower hearth 2 top by segregaion valve 3, described upper furnace 1 top is provided with seed crystal and rotates and upgrades mechanism 4, heat-preservation cylinder 5 is provided with in described lower hearth 2, plumbago crucible 6 is provided with in described heat-preservation cylinder 5, quartz crucible 7 is provided with in described plumbago crucible 6, plumbago crucible 6 arranged outside having heaters 8, well heater 8 is positioned at heat-preservation cylinder 5, described well heater 8 is fixed on bottom lower hearth 2 by heating electrode 9, the top of lower hearth 2 is connected with tunger tube 10, described tunger tube 10 extend in lower hearth 2 through lower hearth 2, the bottom of described lower hearth 2 is provided with vacuum pumping port 11, described vacuum pumping port 11 is connected with delivery pipe 12, delivery pipe 12 end is connected with vacuum pump 13, the import of vacuum pump 13 is connected with the outlet of delivery pipe 12, seed crystal clamping device 14 is provided with above described quartz crucible 7, described seed crystal clamping device 14 rotates and upgrades mechanism 4 by transmission rod 15 and seed crystal and is connected, crucible rotation lifting body 16 is provided with bottom described plumbago crucible 6, described plumbago crucible 6 is provided with circular graphite supporting plate 17 with crucible rotation lifting body 16, described crucible rotation lifting body 16 comprises the turning axle 161 be fixed on bottom graphite supporting plate 17, described turning axle 161 is fixed with swing pinion 162, base 163 is provided with bottom described turning axle 161, described turning axle 161 is fixed on base 163 by bearing, described base 163 is provided with drive-motor 164, the output shaft of described drive-motor 164 is provided with driving gear 165, described driving gear 165 intermeshes with swing pinion 162, the lifting device 166 for making base 163 move up and down is provided with below described base 163.The working process of this crucible rotation lifting body 16 is as follows: the rotation of plumbago crucible 6 controls by drive-motor 164, concrete, drive-motor 164 makes the driving gear 165 be arranged on output shaft rotate, driving gear 165 can rotate by driven rotary gear 162, because swing pinion 162 is fixed on turning axle 161, thus can rotate by driven rotary axle 161, turning axle 161 is fixed on bottom graphite supporting plate 17, thus graphite supporting plate 17 can be driven to rotate, plumbago crucible 6 is placed on graphite supporting plate 17, graphite supporting plate 17 rotation can drive plumbago crucible 6 to rotate, because turning axle 161 is fixed on base 163 by bearing, thus when turning axle 161 rotates, base 163 is motionless, moving up and down of base 163 is realized by lifting device 166, can move up by driven rotary axle 161 when base 163 moves up, and then graphite supporting plate 17 can be driven to rise, thus realize the rising of plumbago crucible 6, therefore, the rising of plumbago crucible 6 and rotary independent control, its lift velocity and speed of rotation control respectively by drive-motor 164 and lifting device 166, the two controls separately to bring great convenience to the state modulator of crystal pulling technique.
Further, described lifting device 166 is can for electric pushrod, cylinder etc., as preferably: described lifting device 166 be hydraulic cylinder, and hydraulic cylinder has larger top lift and controls to facilitate.
In order to reduce calorific loss, save energy, reduces energy consumption, is provided with insulation quilt 30, the inwall of described heat-preservation cylinder 5 scribbles thermal radiation reflecting layer 31 between described heat-preservation cylinder 5 and the inwall of lower hearth 2.
Claims (3)
1. a thermal field structure of single crystal furnace, comprise upper furnace (1), lower hearth (2), upper furnace (1) is arranged on lower hearth (2) top and upper furnace (1) is fixed on lower hearth (2) top by segregaion valve (3), described upper furnace (1) top is provided with seed crystal and rotates and upgrades mechanism (4), heat-preservation cylinder (5) is provided with in described lower hearth (2), plumbago crucible (6) is provided with in described heat-preservation cylinder (5), quartz crucible (7) is provided with in described plumbago crucible (6), plumbago crucible (6) arranged outside having heaters (8), well heater (8) is positioned at heat-preservation cylinder (5), described well heater (8) is fixed on lower hearth (2) bottom by heating electrode (9), the top of lower hearth (2) is connected with tunger tube (10), described tunger tube (10) extend in lower hearth (2) through lower hearth (2), the bottom of described lower hearth (2) is provided with vacuum pumping port (11), described vacuum pumping port (11) is connected with delivery pipe (12), delivery pipe (12) end is connected with vacuum pump (13), the import of vacuum pump (13) is connected with the outlet of delivery pipe (12), described quartz crucible (7) top is provided with seed crystal clamping device (14), described seed crystal clamping device (14) rotates and upgrades mechanism (4) by transmission rod (15) and seed crystal and is connected, described plumbago crucible (6) bottom is provided with crucible rotation lifting body (16), described plumbago crucible (6) and crucible rotation lifting body (16) are provided with circular graphite supporting plate (17), it is characterized in that: described crucible rotation lifting body (16) comprises the turning axle (161) being fixed on graphite supporting plate (17) bottom, described turning axle (161) is fixed with swing pinion (162), described turning axle (161) bottom is provided with base (163), described turning axle (161) is fixed on base (163) by bearing, described base (163) is provided with drive-motor (164), the output shaft of described drive-motor (164) is provided with driving gear (165), described driving gear (165) and swing pinion (162) intermesh, described base (163) below is provided with the lifting device (166) for making base (163) move up and down.
2. thermal field structure of single crystal furnace as claimed in claim 1, is characterized in that: described lifting device (166) is hydraulic cylinder.
3. thermal field structure of single crystal furnace as claimed in claim 2, it is characterized in that: between the inwall of described heat-preservation cylinder (5) and lower hearth (2), be provided with insulation quilt (30), the inwall of described heat-preservation cylinder (5) scribbles thermal radiation reflecting layer (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420733607.6U CN204251762U (en) | 2014-11-27 | 2014-11-27 | A kind of thermal field structure of single crystal furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420733607.6U CN204251762U (en) | 2014-11-27 | 2014-11-27 | A kind of thermal field structure of single crystal furnace |
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| CN204251762U true CN204251762U (en) | 2015-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420733607.6U Expired - Fee Related CN204251762U (en) | 2014-11-27 | 2014-11-27 | A kind of thermal field structure of single crystal furnace |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112853471A (en) * | 2021-01-15 | 2021-05-28 | 广州皇标科技有限公司 | Single crystal furnace for processing photovoltaic cell |
| CN112899773A (en) * | 2021-01-15 | 2021-06-04 | 广州皇标科技有限公司 | Silicon preparation method for processing photovoltaic cell |
| CN113136617A (en) * | 2021-04-16 | 2021-07-20 | 曲靖阳光能源硅材料有限公司 | Czochralski method single crystal furnace and melt temperature gradient control method thereof |
| CN114574975A (en) * | 2022-02-23 | 2022-06-03 | 杭州中欣晶圆半导体股份有限公司 | System for reducing iron content in lightly boron-doped crystal bar body and operation method |
| CN115161769A (en) * | 2022-06-07 | 2022-10-11 | 连城凯克斯科技有限公司 | Furnace chassis and automatic crucible lifting control equipment |
| CN116397318A (en) * | 2023-06-09 | 2023-07-07 | 苏州晨晖智能设备有限公司 | Single crystal crucible loading device |
-
2014
- 2014-11-27 CN CN201420733607.6U patent/CN204251762U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112853471A (en) * | 2021-01-15 | 2021-05-28 | 广州皇标科技有限公司 | Single crystal furnace for processing photovoltaic cell |
| CN112899773A (en) * | 2021-01-15 | 2021-06-04 | 广州皇标科技有限公司 | Silicon preparation method for processing photovoltaic cell |
| CN113136617A (en) * | 2021-04-16 | 2021-07-20 | 曲靖阳光能源硅材料有限公司 | Czochralski method single crystal furnace and melt temperature gradient control method thereof |
| CN114574975A (en) * | 2022-02-23 | 2022-06-03 | 杭州中欣晶圆半导体股份有限公司 | System for reducing iron content in lightly boron-doped crystal bar body and operation method |
| CN115161769A (en) * | 2022-06-07 | 2022-10-11 | 连城凯克斯科技有限公司 | Furnace chassis and automatic crucible lifting control equipment |
| CN115161769B (en) * | 2022-06-07 | 2024-04-16 | 连城凯克斯科技有限公司 | Automatic lifting control equipment for furnace bottom plate and crucible |
| CN116397318A (en) * | 2023-06-09 | 2023-07-07 | 苏州晨晖智能设备有限公司 | Single crystal crucible loading device |
| CN116397318B (en) * | 2023-06-09 | 2023-08-18 | 苏州晨晖智能设备有限公司 | Single crystal crucible loading device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150408 Termination date: 20201127 |