CN206902281U - A kind of single crystal growing furnace - Google Patents
A kind of single crystal growing furnace Download PDFInfo
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- CN206902281U CN206902281U CN201620725534.5U CN201620725534U CN206902281U CN 206902281 U CN206902281 U CN 206902281U CN 201620725534 U CN201620725534 U CN 201620725534U CN 206902281 U CN206902281 U CN 206902281U
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- heater
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Abstract
The utility model discloses a kind of single crystal growing furnace.The single crystal growing furnace in air inlet pipe by setting gas preheating unit, gas preheating unit can heat to entering the argon gas in body of heater, avoid the relatively low argon gas of temperature from entering in body of heater and large effect is caused to the temperature in body of heater, during single crystal growing furnace works, it can ensure that the temperature in body of heater is maintained in a stable scope, the growth to crystal bar is avoided to cause large effect, the silicon rod quality for ensureing finally to grow up to reaches higher quality level, in addition, the useless argon gas of high temperature for being discharged aspirating hole using aspiration pump is passed through air entraining pipe and imported in cavity, new argon gas is preheated using the high temperature argon gas that gives up, the heat contained in the useless argon gas of high temperature can not only be made full use of, realize energy-saving and emission-reduction, simultaneously, the argon gas being preheated is passed through in body of heater, argon gas can be reduced and take away heat in body of heater, further realize energy-saving and emission-reduction.It is adapted in monocrystalline production equipment field popularization and application.
Description
Technical field
Monocrystalline production equipment field is the utility model is related to, especially a kind of single crystal growing furnace.
Background technology
21 century, world energy sources crisis promote the development of photovoltaic market, and crystal silicon solar energy battery is photovoltaic industry
Leading products.With further attention of the countries in the world to solar photovoltaic industry, particularly developed country has formulated a series of
Support policy, encourage utilization solar energy, in addition, with the continuous expansion of silicon solar cell application surface, solar-electricity
The demand in pond is increasing, and the demand of silicon single crystal material is also just increasing.
Monocrystalline silicon is a kind of semi-conducting material, is generally used for manufacturing integrated circuit and other electronic components, monocrystalline silicon growing
Technology has two kinds：One kind is zone-melting process, and another kind is vertical pulling method, and wherein vertical pulling method is the method generally used at present.
The method of monocrystalline growth with czochralski silicon is as follows：The polycrystalline silicon raw material of high-purity is put into the silica crucible of single crystal growing furnace
It is interior, fusing is then heated under the protection of low vacuum and inert gas, the monocrystalline silicon for having a particular growth direction (
It is called seed crystal) it is fitted into seed crystal clamping device, and seed crystal is contacted with silicon solution, the temperature of molten silicon solution is adjusted, connects it
Nearly melting temperature, seed crystal is stretched into from top to bottom in the silicon solution of melting and rotate, then slowly upper lifting seed is brilliant, now,
Monocrystalline silicon enters the growth of conical section, when the diameter of cone is close to aimed dia, improves the lifting speed of seed crystal, makes monocrystalline
Silicon body diameter no longer increases into the middle part growth phase of crystal, in monocrystalline silicon body growth at the end of, then improves seed crystal
Lifting speed, monocrystalline silicon body progressively disengages molten silicon, forms lower cone and terminate to grow.The list to grow out in this way
Crystal silicon, it is shaped as two sections of tapered cylinders, the cylinder is cut into slices, that is, obtains single-crystal semiconductor raw material, this circle
Shape monocrystalline silicon piece can serve as the material of integrated circuit or solar cell.
Pulling single crystal silicon is carried out typically in single crystal growing furnace, and at present, used single crystal growing furnace includes body of heater, the furnace interior
Provided with graphite crucible, the graphite crucible bottom is mutually fixed by crucible axis with bottom of furnace body, and stone is provided with the graphite crucible
English crucible, graphite crucible outside are provided with side heater, and the bottom of furnace body sets aspirating hole, in addition to tunger tube, described
Tunger tube is extend into silica crucible through body of heater, and it is in order to avoid crystal bar is in crystal pulling growth course that argon gas is passed through in single crystal growing furnace
In be oxidized.Problems with actual use be present in this single crystal growing furnace：First, during single crystal growing furnace works, stove
Internal temperature need to be maintained in a stable scope, because existing single crystal growing furnace is all that the argon gas of room temperature directly is passed through into stove
In vivo, generally all it is the height of several Baidu, the argon gas of normal temperature enters will certainly be to stove in body of heater because the temperature in body of heater is higher
Internal temperature causes large effect, if in body of heater temperature fluctuation change greatly can growth to crystal bar cause larger shadow
Ring, the crystal bar finally grown up to is of low quality.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of single crystal growing furnace that can improve production efficiency.
Technical scheme is used by the utility model solves its technical problem：The single crystal growing furnace, including body of heater, the body of heater
Inside is provided with graphite crucible, and the graphite crucible bottom is mutually fixed with bottom of furnace body by crucible axis, set in the graphite crucible
There is silica crucible, be provided with side heater on the outside of graphite crucible, aspirating hole, in addition to argon gas are provided with the sidewall of the furnace body
Pipe and argon gas source, the argon gas source are connected with tunger tube by air inlet pipe, and the end of the tunger tube extend into stone through body of heater
In English crucible, gas preheating unit is provided with the air inlet pipe, the gas preheating unit includes closed cavity, the sky
Intracavitary is provided with heat exchanger tube, and the both ends of the heat exchanger tube extend respectively to connect outside cavity and with air inlet pipe, in the argon gas source
Argon gas flowed into successively along air inlet pipe, heat exchanger tube, tunger tube along crucible, the sealing of the junction of the heat exchanger tube and cavity is described
Air entraining pipe and blast pipe are connected with cavity, one end of the air entraining pipe connects with the aspirating hole set on body of heater, air entraining pipe
The other end is connected with cavity inside, and aspiration pump is provided with the air entraining pipe, and the blast pipe connects with cavity inside.
It is further that the heat exchanger tube is metal coil pipe.
It is further that the heat exchanger tube is made using copper pipe.
It is further that heat-preservation cylinder is provided with the body of heater, graphite crucible, silica crucible, side heater, is respectively positioned on
In heat-preservation cylinder.
It is further to be provided with insulation quilt between the body of heater and heat-preservation cylinder.
It is further that heat radiation reflecting layer is scribbled on the inwall of the heat-preservation cylinder.
The beneficial effects of the utility model are：By setting gas preheating unit in air inlet pipe, gas preheating unit can
With to enter body of heater in argon gas heat, avoid the relatively low argon gas of temperature enter body of heater in the temperature in body of heater is caused compared with
Big influence, during single crystal growing furnace works, it is ensured that the temperature in body of heater is maintained in a stable scope, is ensured
The silicon rod quality finally grown up to reaches higher quality level, the argon gas in addition, high temperature for being discharged aspirating hole using aspiration pump is given up
Imported by air entraining pipe in cavity, new argon gas is preheated using the high temperature argon gas that gives up, can not only make full use of high temperature to give up
The heat contained in argon gas, energy-saving and emission-reduction are realized, meanwhile, the argon gas being preheated is passed through in body of heater, it is possible to reduce argon gas takes away stove
Internal heat, further realizes energy-saving and emission-reduction, reduces the production cost of crystal bar.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model single crystal growing furnace；
In figure mark for：Body of heater 1, graphite crucible 2, crucible axis 3, silica crucible 4, side heater 5, aspirating hole 6, argon gas
Pipe 7, heat-preservation cylinder 12, insulation quilt 13, air inlet pipe 14, argon gas source 15, gas preheating unit 16, cavity 161, heat exchanger tube 162, bleed
Pipe 163, blast pipe 164, aspiration pump 165, heat radiation reflecting layer 17.
Embodiment
The utility model is further illustrated below in conjunction with the accompanying drawings.
As shown in figure 1, the single crystal growing furnace, including body of heater 1, the inside of body of heater 1 are provided with graphite crucible 2, the graphite crucible 2
Bottom is mutually fixed by crucible axis 3 and the bottom of body of heater 1, and silica crucible 4 is provided with the graphite crucible 2, and the outside of graphite crucible 2 is set
Side heater 5 is equipped with, aspirating hole 6, in addition to tunger tube 7 and argon gas source 15, the argon gas are provided with the side wall of body of heater 1
Source 15 is connected with tunger tube 7 by air inlet pipe 14, and the end of the tunger tube 7 is extend into silica crucible 4 through body of heater 1, institute
State and gas preheating unit 16 is provided with air inlet pipe 14, the gas preheating unit 16 includes closed cavity 161, the cavity
Heat exchanger tube 162 is provided with 161, the both ends of the heat exchanger tube 162 extend respectively to connect outside cavity 161 and with air inlet pipe 14,
Argon gas in the argon gas source 15 is flowed into crucible 6 along air inlet pipe 14, heat exchanger tube 162, air inlet pipe 14 successively, the heat exchanger tube
162 are sealed with the junction of cavity 161, and air entraining pipe 163 and blast pipe 164, the air entraining pipe are connected with the cavity 161
163 one end connects with the aspirating hole 2 set on body of heater 1, and the other end of air entraining pipe 163 connects with the inside of cavity 161, described to draw
Aspiration pump 165 is provided with tracheae 163, the blast pipe 164 connects with the inside of cavity 161.By being set in air inlet pipe 14
Gas preheating unit 16, gas preheating unit 16 can heat to entering the argon gas in body of heater 1, avoid the argon that temperature is relatively low
Gas enters in body of heater 1 causes large effect to the temperature in body of heater 1, during single crystal growing furnace works, it is ensured that body of heater 1
Interior temperature is maintained in a stable scope, and the crystal bar quality for ensureing finally to grow up to reaches higher quality level, in addition,
The high temperature of being discharged aspirating hole 2 using aspiration pump 165 argon gas that gives up is imported in cavity 161 by air entraining pipe 163, is given up argon using high temperature
Gas preheats to new argon gas, can not only make full use of the heat contained in the useless argon gas of high temperature, realize energy-saving and emission-reduction, together
When, the argon gas being preheated is passed through in body of heater 1, it is possible to reduce and argon gas takes away the heat in body of heater 1, further realizes energy-saving and emission-reduction,
Reduce the production cost of crystal bar.
In order to improve heat exchange efficiency, extend heat-exchange time, the heat exchanger tube 162 is metal coil pipe.In order to further improve
Heat exchange efficiency, the heat exchanger tube 162 are made using copper pipe.
In order to reduce thermal loss, the energy is saved, energy consumption is reduced, heat-preservation cylinder 12, graphite crucible is provided with the body of heater 1
2nd, silica crucible 4, side heater 5, be respectively positioned in heat-preservation cylinder 12.In order to further reduce thermal loss, the body of heater 1 with
Insulation quilt 13 is additionally provided between heat-preservation cylinder 12, while heat radiation reflecting layer 17 is scribbled on the inwall of heat-preservation cylinder 12.
Claims (6)
1. a kind of single crystal growing furnace, including body of heater (1), the body of heater (1) is internal to be provided with graphite crucible (2), graphite crucible (2) bottom
Portion is mutually fixed by crucible axis (3) and body of heater (1) bottom, and silica crucible (4), graphite crucible are provided with the graphite crucible (2)
(2) outside is provided with side heater (5), is provided with aspirating hole (6) in body of heater (1) side wall, in addition to tunger tube (7) with
Argon gas source (15), the argon gas source (15) are connected with tunger tube (7) by air inlet pipe (14), and the end of the tunger tube (7) is worn
Body of heater (1) is crossed to extend into silica crucible (4), it is characterised in that：Gas preheating unit is provided with the air inlet pipe (14)
(16), the gas preheating unit (16) includes closed cavity (161), and heat exchanger tube is provided with the cavity (161)
(162), the both ends of the heat exchanger tube (162) extend respectively to cavity (161) outside and connected with air inlet pipe (14), the argon gas source
(15) argon gas in is flowed into silica crucible (4) along air inlet pipe (14), heat exchanger tube (162), tunger tube (7) successively, the heat exchange
Manage (162) and the junction of cavity (161) seal, air entraining pipe (163) and blast pipe (164) are connected with the cavity (161),
One end of the air entraining pipe (163) connects with the aspirating hole (6) set on body of heater (1), the other end and cavity of air entraining pipe (163)
(161) it is internal to connect, aspiration pump (165) is provided with the air entraining pipe (163), the blast pipe (164) is interior with cavity (161)
Portion connects.
2. single crystal growing furnace as claimed in claim 1, it is characterised in that：The heat exchanger tube (162) is metal coil pipe.
3. single crystal growing furnace as claimed in claim 2, it is characterised in that：The heat exchanger tube (162) is made using copper pipe.
4. single crystal growing furnace as claimed in claim 3, it is characterised in that：Heat-preservation cylinder (12), graphite earthenware are provided with the body of heater (1)
Crucible (2), silica crucible (4), side heater (5), it is respectively positioned in heat-preservation cylinder (12).
5. single crystal growing furnace as claimed in claim 4, it is characterised in that：Guarantor is provided between the body of heater (1) and heat-preservation cylinder (12)
Warm felt (13).
6. single crystal growing furnace as claimed in claim 5, it is characterised in that：Heat radiation reflection is scribbled on the inwall of the heat-preservation cylinder (12)
Layer (17).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620725534.5U CN206902281U (en) | 2016-07-11 | 2016-07-11 | A kind of single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620725534.5U CN206902281U (en) | 2016-07-11 | 2016-07-11 | A kind of single crystal growing furnace |
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| Publication Number | Publication Date |
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| CN206902281U true CN206902281U (en) | 2018-01-19 |
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ID=61293958
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620725534.5U Active CN206902281U (en) | 2016-07-11 | 2016-07-11 | A kind of single crystal growing furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
| CN108193263A (en) * | 2018-01-26 | 2018-06-22 | 山东大海新能源发展有限公司 | A kind of monocrystalline produces stove |
-
2016
- 2016-07-11 CN CN201620725534.5U patent/CN206902281U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108193263A (en) * | 2018-01-26 | 2018-06-22 | 山东大海新能源发展有限公司 | A kind of monocrystalline produces stove |
| CN108179469A (en) * | 2018-02-13 | 2018-06-19 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
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