CN202030861U - Heating device for polycrystalline silicon crystal growing furnace - Google Patents
Heating device for polycrystalline silicon crystal growing furnace Download PDFInfo
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- CN202030861U CN202030861U CN2011200231243U CN201120023124U CN202030861U CN 202030861 U CN202030861 U CN 202030861U CN 2011200231243 U CN2011200231243 U CN 2011200231243U CN 201120023124 U CN201120023124 U CN 201120023124U CN 202030861 U CN202030861 U CN 202030861U
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- heater
- crystal growing
- growing furnace
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- crucible
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Abstract
The utility model relates to a heating device for a polycrystalline silicon crystal growing furnace, which is characterized in that the heating device comprises a top-part heater and a lateral-part heater, wherein the top-part heater is arranged at the top of a crucible of the crystal growing furnace and connected with top-part heating electrodes; the lateral-part heater is arranged at the periphery of the crucible and connected with lateral-part heating electrodes; and the top-part heating electrodes and the lateral-part heating electrodes are respectively connected with transformers and controllers. The top-part heater and the lateral-part heater form two independently-controlled double thermal fields, and two independent power controllers respectively adjust the output power of the heaters according to different temperature needed for an upper area, a middle area and a lower area in the crystal growing process of silicon dissolving bodies in the crucible, and the temperature gradient and hot wall effect of crystal growth are formed by adjusting the temperature of a crystal grower. The heating device has the advantages of large adjustment range of temperature gradient and good impurity discharge effect, is convenient for optimizing the thermal fields and is favorable for the crystal growing quality.
Description
Technical field
The utility model relates to a kind of novel polysilicon crystal growing furnace, particularly a kind of polysilicon crystal growing furnace heating unit.
Background technology
The polysilicon crystal growing furnace is that the silicon raw material is made the silicon directional freeze through technologies such as heating, long crystalline substance, annealing, forms unidirectional hot-fluid by the temperature variation of controlling thermal field, thereby forms directed styloid.At present the type of heating of thermal field mainly contains two kinds of structures, and a kind of is well heater or single thermal field structure of forming of side well heater and top heater all around around a group.In process of production, by adjusting the temperature that single group power controller changes thermal field.But the silicon solution is in long brilliant process, thermograde from bottom to top is different, especially when crystal length arrives near the top, guarantee the thermograde at top, could improve the utilization ratio of silicon ingot, because single thermal field structure is to adjust with a controller, be difficult to the thermograde of the different zones of satisfied long brilliant whole process.Another kind of thermal field is that bottom heater and top heater are controlled the two thermal field structures of composition respectively, respectively by adjusting power controller, change the temperature of the upper and lower of thermal field, but because well heater is by long brilliant device the silicon material to be carried out indirect heating down, exist thermo-efficiency not high, top heater is the main heating source of thermal field all the time simultaneously, suppressed to discharge the convection current of the low impurity of zero pour from silicon solution surface, around the silicon solution, can't form hot wall in addition, solid-liquid interface is spill, be unfavorable for the discharge of the inner impurity of silicon solution, influence the transformation efficiency of battery.
Summary of the invention
The technical problems to be solved in the utility model is at the deficiencies in the prior art, has proposed a kind of polysilicon crystal growing furnace heating unit that helps thermal field formation temperature gradient and the discharge of silicon solution inside and outside impurity.
The technical problems to be solved in the utility model is achieved through the following technical solutions.The utility model is a kind of polysilicon crystal growing furnace heating unit, be characterized in: it comprises by top heater and sidepiece well heater, described top heater is located at the top of crystal growing furnace crucible, top heater connects the top heater electrode, described sidepiece well heater be located at crucible around, the sidepiece well heater connects the sidepiece heater electrode, and described top firing electrode is connected with controller with transformer respectively with the sidepiece heating electrode.
In the above-described polysilicon crystal growing furnace heating unit, its optimized technical scheme is: described sidepiece well heater is fixedly connected by junctor, and described sidepiece heating electrode is connected on the junctor.
The utility model polysilicon crystal growing furnace heating unit is an a kind of pair of thermal field structure, it forms two thermal fields of two independent controls by top heater and sidepiece well heater all around, in the brilliant process of the length of silicon solution in crucible, the required different temperature in upper, middle and lower zone, two independently power controller adjust the output size of heater power respectively, and, form the thermograde and the hot wall effect of crystal growth by growing the adjusting of brilliant actuator temperature.The setting range of the utility model thermograde is big, and impurities removal is effective, conveniently optimizes thermal field, helps the quality of crystal growth.
Description of drawings
Fig. 1 is a kind of structural representation of the present utility model.
Embodiment
Following with reference to accompanying drawing, further describe concrete technical scheme of the present utility model, so that those skilled in the art understands the present invention further, and do not constitute restriction to its right.
Embodiment 1.With reference to Fig. 1.A kind of polysilicon crystal growing furnace heating unit, it comprises by top heater 5 and sidepiece well heater 1, described top heater 5 is located at the top of the crucible 2 of crystal growing furnace, be connected with top firing electrode 6 on the top heater 5, described sidepiece well heater 1 be located at crucible 2 around, be connected with top firing electrode 4 on the sidepiece well heater 1, described top firing electrode is connected with controller with transformer respectively with the sidepiece heating electrode.
Embodiment 2.With reference to Fig. 1.A kind of polysilicon crystal growing furnace heating unit, it comprises by top heater 5 and sidepiece well heater 1, described top heater 5 is located at the top of the crucible 2 of crystal growing furnace, connect top firing electrode 6 on the top heater 5, described sidepiece well heater 1 be located at crucible 2 around, sidepiece well heater 1 is fixedly connected by junctor 3, and sidepiece heating electrode 4 is connected on the junctor 3, and described top firing electrode is connected with controller with transformer respectively with the sidepiece heating electrode.
Claims (2)
1. polysilicon crystal growing furnace heating unit, it is characterized in that: it comprises by top heater and sidepiece well heater, described top heater is located at the top of crystal growing furnace crucible, top heater connects the top heater electrode, described sidepiece well heater be located at crucible around, the sidepiece well heater connects the sidepiece heater electrode, and described top firing electrode is connected with controller with transformer respectively with the sidepiece heating electrode.
2. polysilicon crystal growing furnace heating unit according to claim 1 is characterized in that: described sidepiece well heater is fixedly connected by junctor, and described sidepiece heating electrode is connected on the junctor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011200231243U CN202030861U (en) | 2011-01-25 | 2011-01-25 | Heating device for polycrystalline silicon crystal growing furnace |
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CN2011200231243U CN202030861U (en) | 2011-01-25 | 2011-01-25 | Heating device for polycrystalline silicon crystal growing furnace |
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CN202030861U true CN202030861U (en) | 2011-11-09 |
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CN2011200231243U Expired - Fee Related CN202030861U (en) | 2011-01-25 | 2011-01-25 | Heating device for polycrystalline silicon crystal growing furnace |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103160920A (en) * | 2013-03-22 | 2013-06-19 | 管文礼 | Heating body structure of single crystal growth furnace |
CN103334154A (en) * | 2013-05-29 | 2013-10-02 | 浙江晟辉科技有限公司 | Preparation method of polycrystalline silicon ingots based on thermal exchange technology |
CN103374758A (en) * | 2012-04-25 | 2013-10-30 | 志圣科技(广州)有限公司 | Heating system for crystal growth |
CN105926036A (en) * | 2016-05-24 | 2016-09-07 | 山东省科学院能源研究所 | Polycrystalline silicon crystal growing furnace growth device and heat source adjusting method thereof |
CN106087043A (en) * | 2016-08-10 | 2016-11-09 | 中联西北工程设计研究院有限公司 | A kind of polysilicon fritting casting ingot method and device |
CN106087044A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting melt method based on auxiliary heating |
CN106087053A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting method |
CN106222740A (en) * | 2016-08-19 | 2016-12-14 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting method reducing oxygen content bottom polycrystalline silicon ingot casting |
CN106283182A (en) * | 2016-08-19 | 2017-01-04 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon casting ingot process |
-
2011
- 2011-01-25 CN CN2011200231243U patent/CN202030861U/en not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103374758A (en) * | 2012-04-25 | 2013-10-30 | 志圣科技(广州)有限公司 | Heating system for crystal growth |
CN103374758B (en) * | 2012-04-25 | 2016-03-02 | 志圣科技(广州)有限公司 | Crystal growth heating system |
CN103160920A (en) * | 2013-03-22 | 2013-06-19 | 管文礼 | Heating body structure of single crystal growth furnace |
CN103334154A (en) * | 2013-05-29 | 2013-10-02 | 浙江晟辉科技有限公司 | Preparation method of polycrystalline silicon ingots based on thermal exchange technology |
CN105926036A (en) * | 2016-05-24 | 2016-09-07 | 山东省科学院能源研究所 | Polycrystalline silicon crystal growing furnace growth device and heat source adjusting method thereof |
CN106087043A (en) * | 2016-08-10 | 2016-11-09 | 中联西北工程设计研究院有限公司 | A kind of polysilicon fritting casting ingot method and device |
CN106087044A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting melt method based on auxiliary heating |
CN106087053A (en) * | 2016-08-19 | 2016-11-09 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting method |
CN106222740A (en) * | 2016-08-19 | 2016-12-14 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon ingot casting method reducing oxygen content bottom polycrystalline silicon ingot casting |
CN106283182A (en) * | 2016-08-19 | 2017-01-04 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon casting ingot process |
CN106283182B (en) * | 2016-08-19 | 2019-09-27 | 西安华晶电子技术股份有限公司 | A kind of polycrystalline silicon casting ingot process |
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C14 | Grant of patent or utility model | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111109 Termination date: 20130125 |
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CF01 | Termination of patent right due to non-payment of annual fee |