CN204251758U - For the device of vertical pulling method produce single crystal - Google Patents
For the device of vertical pulling method produce single crystal Download PDFInfo
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- CN204251758U CN204251758U CN201420734895.7U CN201420734895U CN204251758U CN 204251758 U CN204251758 U CN 204251758U CN 201420734895 U CN201420734895 U CN 201420734895U CN 204251758 U CN204251758 U CN 204251758U
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Abstract
The utility model discloses a kind of device for vertical pulling method produce single crystal that can reduce argon gas usage quantity.This device comprises upper furnace, lower hearth, upper furnace top is provided with seed crystal and rotates and upgrades mechanism, heat-preservation cylinder is provided with in lower hearth, plumbago crucible is provided with in heat-preservation cylinder, quartz crucible is provided with in plumbago crucible, plumbago crucible arranged outside having heaters, crucible rotation lifting body is provided with bottom plumbago crucible, plumbago crucible and crucible rotation lifting body are provided with circular graphite supporting plate, bypass tube is provided with between the import of vacuum pump and vacuum pumping port, by arranging bypass tube, when entering the crystal pulling technique stage after vacuumizing, bypass tube passage can be used, because the internal diameter of bypass tube is less, vacuum pump operationally, the gas volume extracted just reduces greatly, so only need pass into a small amount of argon gas can make to keep certain density argon gas in lower hearth, the demand decreasing argon gas is larger.Be adapted at monocrystalline production unit field to apply.
Description
Technical field
The utility model relates to monocrystalline production unit field, especially a kind of device for vertical pulling method produce single crystal.
Background technology
21 century, world energy sources crisis facilitates the development of photovoltaic market, and crystal silicon solar energy battery is the leading product of photovoltaic industry.Along with countries in the world are to the further attention of solar photovoltaic industry, particularly developed country has formulated a series of support policy, encourage to develop sun power, in addition, along with the continuous expansion of silicon solar cell application surface, the demand of solar cell is increasing, and the demand of silicon single crystal material is also just increasing.
Silicon single crystal is a kind of semiconductor material, and be generally used for and manufacture unicircuit and other electronic components, monocrystalline silicon growing technology has two kinds: one is zone melting method, and another kind is vertical pulling method, and wherein vertical pulling method makes the current method generally adopted.
The method of monocrystalline growth with czochralski silicon is as follows: the quartz crucible highly purified polycrystalline silicon raw material being put into the device for vertical pulling method produce single crystal, then heat fused under the protection of slumpability gas is had in rough vacuum, the silicon single crystal in particular growth direction (being also called seed crystal) is had to load in seed crystal clamping device one, and seed crystal is contacted with silicon solution, the temperature of adjustment molten silicon solution, make it close to melting temperature, then seed crystal is driven to stretch in the silicon solution of melting and to rotate from top to bottom, then slowly upper lifting seed is brilliant, now, silicon single crystal enters the growth of conical part, when the diameter of cone is close to aimed dia, improve the pulling speed of seed crystal, monocrystalline silicon body diameter is made no longer to increase and enter the middle part growth phase of crystal, at the end of monocrystalline silicon body growth is close, improve the pulling speed of seed crystal again, monocrystalline silicon body departs from molten silicon gradually, form lower cone and terminate growth.The silicon single crystal grown out in this way, its shape is two sections of tapered right cylinders, is cut into slices by this right cylinder, namely obtains single-crystal semiconductor raw material, and this circular single crystal silicon chip just can as the material of unicircuit or sun power.
Pulling single crystal silicon generally carries out in the device for vertical pulling method produce single crystal, at present, the device for vertical pulling method produce single crystal used comprises upper furnace, lower hearth, upper furnace is arranged on above lower hearth and upper furnace is fixed on lower hearth top by segregaion valve, described upper furnace top is provided with seed crystal and rotates and upgrades mechanism, heat-preservation cylinder is provided with in described lower hearth, plumbago crucible is provided with in described heat-preservation cylinder, quartz crucible is provided with in described plumbago crucible, plumbago crucible arranged outside having heaters, well heater is positioned at heat-preservation cylinder, described well heater is fixed on bottom lower hearth by heating electrode, the top of lower hearth is connected with tunger tube, described tunger tube extend in lower hearth through lower hearth, the bottom of described lower hearth is provided with vacuum pumping port, described vacuum pumping port is connected with delivery pipe, delivery pipe end is connected with vacuum pump, the import of vacuum pump is connected with the outlet of delivery pipe, seed crystal clamping device is provided with above described quartz crucible, described seed crystal clamping device rotates and upgrades mechanism by transmission rod and seed crystal and is connected, crucible rotation lifting body is provided with bottom described plumbago crucible, described plumbago crucible and crucible rotation lifting body are provided with circular graphite supporting plate, there is following problem in this device for vertical pulling method produce single crystal: first in actual use, the existing device for vertical pulling method produce single crystal needed first to utilize in lower hearth to be evacuated to certain vacuum tightness before carrying out crystal pulling technique, and then carry out crystal pulling technique, in crystal pulling technique process, vacuum pump its object one that always works keeps certain vacuum tightness in lower hearth to ensure, the waste gas simultaneously also crystal pulling produced argon gas wrap up in band under discharge, owing to only having the delivery pipe that an internal diameter is thicker between the vacuum pump of the existing device for vertical pulling method produce single crystal and vacuum pumping port, this delivery pipe internal diameter is thicker, by better for effect when vacuumizing in lower hearth before crystal pulling technique, but, in crystal pulling technique process, because delivery pipe internal diameter is thicker, the gas be used in the device of vertical pulling method produce single crystal can be taken away fast, in order to avoid silicon rod oxidation, need in lower hearth to keep certain density argon gas, so just, need to pass in a large amount of argon gas guarantee lower hearths and keep certain density argon gas, the demand of argon gas is larger, and argon gas is expensive, cause production cost higher, secondly, in the process of the device work for vertical pulling method produce single crystal, temperature in lower hearth need remain in a stable scope, because the existing device for vertical pulling method produce single crystal is all directly pass in lower hearth by the argon gas of room temperature, because the temperature in lower hearth is higher, the height of usual Dou Shiji Baidu, the argon gas of normal temperature enters in lower hearth and will certainly cause larger impact to the temperature in lower hearth, if temperature fluctuation changes greatly and can cause larger impact to the growth of crystal bar in lower hearth, the crystal bar quality finally grown up to also can level uneven, in addition, in crystal pulling process, crucible need rotate and keep certain speed to rise, the crucible rotation jacking apparatus of the existing device for vertical pulling method produce single crystal is all realize by a crucible shaft, crucible shaft can make crucible rise and rotate in the process of rotating simultaneously, but there is a problem in this crucible rotation jacking apparatus, namely the speed of rotation of crucible is limited to the lift velocity of crucible, if the speed of rotation of crucible is accelerated to cause the lift velocity of crucible to be accelerated, the two can not separate and controls separately, sometimes, the speed of rotation accelerating crucible is needed still not increase the lift velocity of crucible, the existing device for vertical pulling method produce single crystal just cannot realize above-mentioned functions, this state modulator for crystal pulling technique is very inconvenient.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of device for vertical pulling method produce single crystal that can reduce argon gas usage quantity.
The utility model solves the technical scheme that its technical problem adopts: this is used for the device of vertical pulling method produce single crystal, comprise upper furnace, lower hearth, upper furnace is arranged on above lower hearth and upper furnace is fixed on lower hearth top by segregaion valve, described upper furnace top is provided with seed crystal and rotates and upgrades mechanism, heat-preservation cylinder is provided with in described lower hearth, plumbago crucible is provided with in described heat-preservation cylinder, quartz crucible is provided with in described plumbago crucible, plumbago crucible arranged outside having heaters, well heater is positioned at heat-preservation cylinder, described well heater is fixed on bottom lower hearth by heating electrode, the top of lower hearth is connected with tunger tube, described tunger tube extend in lower hearth through lower hearth, the bottom of described lower hearth is provided with vacuum pumping port, described vacuum pumping port is connected with delivery pipe, delivery pipe end is connected with vacuum pump, the import of vacuum pump is connected with the outlet of delivery pipe, seed crystal clamping device is provided with above described quartz crucible, described seed crystal clamping device rotates and upgrades mechanism by transmission rod and seed crystal and is connected, crucible rotation lifting body is provided with bottom described plumbago crucible, described plumbago crucible and crucible rotation lifting body are provided with circular graphite supporting plate, bypass tube is provided with between the import of described vacuum pump and vacuum pumping port, described bypass tube is provided with the by-pass valve for making bypass tube conducting or closedown, described delivery pipe is provided with the technique valve for making delivery pipe conducting or closedown, the internal diameter of described bypass tube is the 1/3-1/2 of delivery pipe internal diameter.
Be further, described technique valve, by-pass valve are magnetic valve, described technique valve is connected with the first touch switch, described by-pass valve is connected with the second touch switch, vacuumometer is provided with in described lower hearth, also comprise controller, described first touch switch, the second touch switch, vacuumometer are electrically connected with controller respectively.
Be further, described tunger tube is provided with gas-heating apparatus, described gas-heating apparatus comprises columnar shape basal, columniform gas heating cavity is provided with in described columnar shape basal, described columnar shape basal is provided with and the inlet mouth of gas heating cavity connects and air outlet, described inlet mouth is communicated with argon gas source by tracheae, and described air outlet is communicated with tunger tube, the surface wrap of described columnar shape basal has heater strip, and described heater strip is connected on power supply.
Further, be provided with temp controlled meter between described heater strip and power supply, be provided with temp probe in described gas heating cavity, described temp probe is connected with temp controlled meter.
Be further, described crucible rotation lifting body comprises the turning axle be fixed on bottom graphite supporting plate, described turning axle is fixed with swing pinion, base is provided with bottom described turning axle, described turning axle is fixed on base by bearing, and described base is provided with drive-motor, and the output shaft of described drive-motor is provided with driving gear, described driving gear and swing pinion intermesh, and are provided with the lifting device for making base move up and down below described base.
Further, described lifting device is hydraulic cylinder.
Further, between described heat-preservation cylinder and the inwall of lower hearth, be provided with insulation quilt, the inwall of described heat-preservation cylinder scribble thermal radiation reflecting layer.
The beneficial effects of the utility model are: by arranging bypass tube, make to form two passes between the import of vacuum pump and vacuum pumping port, needed first by when being evacuated to certain vacuum tightness in lower hearth before carrying out crystal pulling technique, by-pass valve cuts out, technique valve is opened, certain vacuum tightness can be evacuated to fast like this by lower hearth, when entering the crystal pulling technique stage after vacuumizing, technique valve cuts out and by-pass valve is opened, in crystal pulling technique process, vacuum pump works always and its objective is and keep certain vacuum tightness in lower hearth to ensure, internal diameter due to bypass tube is less only has about 1/1 to two/3rd of delivery pipe internal diameter, such vacuum pump operationally, the gas volume extracted just reduces greatly, so only need pass into a small amount of argon gas can make to keep certain density argon gas in lower hearth, the demand decreasing argon gas is larger, reduce production cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model for the device of vertical pulling method produce single crystal;
Be labeled as in figure: upper furnace 1, lower hearth 2, segregaion valve 3, seed crystal rotates and upgrades mechanism 4, heat-preservation cylinder 5, plumbago crucible 6, quartz crucible 7, well heater 8, heating electrode 9, tunger tube 10, vacuum pumping port 11, delivery pipe 12, vacuum pump 13, seed crystal clamping device 14, transmission rod 15, crucible rotation lifting body 16, turning axle 161, swing pinion 162, base 163, drive-motor 164, driving gear 165, lifting device 166, graphite supporting plate 17, bypass tube 22, by-pass valve 23, technique valve 24, first touch switch 25, second touch switch 26, vacuumometer 27, controller 28, gas-heating apparatus 29, columnar shape basal 291, gas heating cavity 292, argon gas source 293, heater strip 294, power supply 295, temp controlled meter 296, temp probe 297, insulation quilt 30, thermal radiation reflecting layer 31.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further illustrated.
As shown in Figure 1, this is used for the device of vertical pulling method produce single crystal, comprise upper furnace 1, lower hearth 2, upper furnace 1 is arranged on above lower hearth 2 and upper furnace 1 is fixed on lower hearth 2 top by segregaion valve 3, described upper furnace 1 top is provided with seed crystal and rotates and upgrades mechanism 4, heat-preservation cylinder 5 is provided with in described lower hearth 2, plumbago crucible 6 is provided with in described heat-preservation cylinder 5, quartz crucible 7 is provided with in described plumbago crucible 6, plumbago crucible 6 arranged outside having heaters 8, well heater 8 is positioned at heat-preservation cylinder 5, described well heater 8 is fixed on bottom lower hearth 2 by heating electrode 9, the top of lower hearth 2 is connected with tunger tube 10, described tunger tube 10 extend in lower hearth 2 through lower hearth 2, the bottom of described lower hearth 2 is provided with vacuum pumping port 11, described vacuum pumping port 11 is connected with delivery pipe 12, delivery pipe 12 end is connected with vacuum pump 13, the import of vacuum pump 13 is connected with the outlet of delivery pipe 12, seed crystal clamping device 14 is provided with above described quartz crucible 7, described seed crystal clamping device 14 rotates and upgrades mechanism 4 by transmission rod 15 and seed crystal and is connected, crucible rotation lifting body 16 is provided with bottom described plumbago crucible 6, described plumbago crucible 6 is provided with circular graphite supporting plate 17 with crucible rotation lifting body 16, bypass tube 22 is provided with between the import of described vacuum pump 13 and vacuum pumping port 11, described bypass tube 22 is provided with the by-pass valve 23 for making bypass tube 22 conducting or closedown, described delivery pipe 12 is provided with the technique valve 24 for making delivery pipe 12 conducting or closedown, the internal diameter of described bypass tube 22 is the 1/3-1/2 of delivery pipe 12 internal diameter.By arranging bypass tube 22, make to form two passes between the import of vacuum pump 13 and vacuum pumping port 11, needed first to utilize in lower hearth 2 when being evacuated to certain vacuum tightness before carrying out crystal pulling technique, by-pass valve 23 cuts out, technique valve 24 is opened, certain vacuum tightness can be evacuated to fast like this by lower hearth 2, when entering the crystal pulling technique stage after vacuumizing, technique valve 24 cuts out and by-pass valve 23 is opened, in crystal pulling technique process, vacuum pump 13 works always and its objective is to ensure the vacuum tightness that the interior maintenance of lower hearth 2 is certain, internal diameter due to bypass tube 22 is less only has about 1/1 to two/3rd of delivery pipe 12 internal diameter, such vacuum pump 13 operationally, the gas volume extracted just reduces greatly, so only need pass into a small amount of argon gas can make to keep certain density argon gas in lower hearth 2, the demand decreasing argon gas is larger, reduce production cost.
Moreover, in order to make technique valve 24, by-pass valve 23 can control automatically, realize unattended, described technique valve 24, by-pass valve 23 are magnetic valve, described technique valve 24 is connected with the first touch switch 25, described by-pass valve 23 is connected with the second touch switch 26, in described lower hearth 2, be provided with vacuumometer 27, also comprise controller 28, described first touch switch 25, second touch switch 26, vacuumometer 27 are electrically connected with controller 28 respectively.When vacuum pump 13 is started working, controller 28 controls the first touch switch 25 to be made by-pass valve 23 close bypass tube 22 to close, controlling the second touch switch 26 makes technique valve 24 open delivery pipe 12 conducting, vacuum pump 13 continuous firing, vacuumometer 27 is used for the vacuum tightness measured in body of heater the vacuum values recorded is passed to controller 28, when controller 28 detects that the numerical value of vacuumometer 27 reaches specified requirement, controller 28 controls the first touch switch 25 makes by-pass valve 23 open bypass tube 22 conducting, control the second touch switch 26 to make technique valve 24 close delivery pipe 12 to close, now enter the crystal pulling technique stage, whole process is without the need to manually controlling technique valve 24 and by-pass valve 23, achieve unattended.
Described tunger tube 10 is provided with gas-heating apparatus 29, described gas-heating apparatus 29 comprises columnar shape basal 291, columniform gas heating cavity 292 is provided with in described columnar shape basal 291, described columnar shape basal 291 is provided with the inlet mouth be communicated with gas heating cavity 292 and air outlet, described inlet mouth is communicated with argon gas source 293 by tracheae, described air outlet is communicated with tunger tube 10, the surface wrap of described columnar shape basal 291 has heater strip 294, and described heater strip 294 is connected on power supply 295.By arranging gas-heating apparatus 29 on tunger tube 10, gas-heating apparatus 29 can heat the argon gas entered in lower hearth 2, the argon gas avoiding temperature lower enters in lower hearth 2 and causes larger impact to the temperature in lower hearth 2, in the process of the device work for vertical pulling method produce single crystal, the temperature that can ensure in lower hearth 2 remains in a stable scope, avoid causing larger impact to the growth of crystal bar, ensure that the crystal bar quality finally grown up to reaches higher quality level, in addition, utilize heater strip 294 can rapid heating, and gas heating cavity 292 is cylindrical, thus, can ensure that argon gas has enough heat-up times, all argon gas can be made to be heated to same temperature, heats is better.Be further, temp controlled meter 296 is provided with between described heater strip 294 and power supply 295, temp probe 297 is provided with in described gas heating cavity 292, described temp probe 297 is connected with temp controlled meter 296, the temperature in gas heating cavity 292 can be adjusted by temp controlled meter 296, the temperature of rare gas element freely can be adjusted according to different situations, very easy to use.
In order to the speed of rotation and lift velocity that can realize crucible control separately, described crucible rotation lifting body 16 comprises the turning axle 161 be fixed on bottom graphite supporting plate 17, described turning axle 161 is fixed with swing pinion 162, base 163 is provided with bottom described turning axle 161, described turning axle 161 is fixed on base 163 by bearing, described base 163 is provided with drive-motor 164, the output shaft of described drive-motor 164 is provided with driving gear 165, described driving gear 165 intermeshes with swing pinion 162, the lifting device 166 for making base 163 move up and down is provided with below described base 163.The working process of this crucible rotation lifting body 16 is as follows: the rotation of plumbago crucible 6 controls by drive-motor 164, concrete, drive-motor 164 makes the driving gear 165 be arranged on output shaft rotate, driving gear 165 can rotate by driven rotary gear 162, because swing pinion 162 is fixed on turning axle 161, thus can rotate by driven rotary axle 161, turning axle 161 is fixed on bottom graphite supporting plate 17, thus graphite supporting plate 17 can be driven to rotate, plumbago crucible 6 is placed on graphite supporting plate 17, graphite supporting plate 17 rotation can drive plumbago crucible 6 to rotate, because turning axle 161 is fixed on base 163 by bearing, thus when turning axle 161 rotates, base 163 is motionless, moving up and down of base 163 is realized by lifting device 166, can move up by driven rotary axle 161 when base 163 moves up, and then graphite supporting plate 17 can be driven to rise, thus realize the rising of plumbago crucible 6, therefore, the rising of plumbago crucible 6 and rotary independent control, its lift velocity and speed of rotation control respectively by drive-motor 164 and lifting device 166, the two controls separately to bring great convenience to the state modulator of crystal pulling technique.
Further, described lifting device 166 is can for electric pushrod, cylinder etc., as preferably: described lifting device 166 be hydraulic cylinder, and hydraulic cylinder has larger top lift and controls to facilitate.
In order to reduce calorific loss, save energy, reduces energy consumption, is provided with insulation quilt 30, the inwall of described heat-preservation cylinder 5 scribbles thermal radiation reflecting layer 31 between described heat-preservation cylinder 5 and the inwall of lower hearth 2.
Claims (7)
1. for the device of vertical pulling method produce single crystal, comprise upper furnace (1), lower hearth (2), upper furnace (1) is arranged on lower hearth (2) top and upper furnace (1) is fixed on lower hearth (2) top by segregaion valve (3), described upper furnace (1) top is provided with seed crystal and rotates and upgrades mechanism (4), heat-preservation cylinder (5) is provided with in described lower hearth (2), plumbago crucible (6) is provided with in described heat-preservation cylinder (5), quartz crucible (7) is provided with in described plumbago crucible (6), plumbago crucible (6) arranged outside having heaters (8), well heater (8) is positioned at heat-preservation cylinder (5), described well heater (8) is fixed on lower hearth (2) bottom by heating electrode (9), the top of lower hearth (2) is connected with tunger tube (10), described tunger tube (10) extend in lower hearth (2) through lower hearth (2), the bottom of described lower hearth (2) is provided with vacuum pumping port (11), described vacuum pumping port (11) is connected with delivery pipe (12), delivery pipe (12) end is connected with vacuum pump (13), the import of vacuum pump (13) is connected with the outlet of delivery pipe (12), described quartz crucible (7) top is provided with seed crystal clamping device (14), described seed crystal clamping device (14) rotates and upgrades mechanism (4) by transmission rod (15) and seed crystal and is connected, described plumbago crucible (6) bottom is provided with crucible rotation lifting body (16), described plumbago crucible (6) and crucible rotation lifting body (16) are provided with circular graphite supporting plate (17), it is characterized in that: between the import of described vacuum pump (13) and vacuum pumping port (11), be provided with bypass tube (22), described bypass tube (22) is provided with the by-pass valve (23) for making bypass tube (22) conducting or closedown, described delivery pipe (12) is provided with the technique valve (24) for making delivery pipe (12) conducting or closedown, the internal diameter of described bypass tube (22) is the 1/3-1/2 of delivery pipe (12) internal diameter.
2. as claimed in claim 1 for the device of vertical pulling method produce single crystal, it is characterized in that: described technique valve (24), by-pass valve (23) is magnetic valve, described technique valve (24) is connected with the first touch switch (25), described by-pass valve (23) is connected with the second touch switch (26), vacuumometer (27) is provided with in described lower hearth (2), also comprise controller (28), described first touch switch (25), second touch switch (26), vacuumometer (27) is electrically connected with controller (28) respectively.
3. as claimed in claim 2 for the device of vertical pulling method produce single crystal, it is characterized in that: described tunger tube (10) is provided with gas-heating apparatus (29), described gas-heating apparatus (29) comprises columnar shape basal (291), columniform gas heating cavity (292) is provided with in described columnar shape basal (291), described columnar shape basal (291) is provided with the inlet mouth and air outlet that are communicated with gas heating cavity (292), described inlet mouth is communicated with argon gas source (293) by tracheae, described air outlet is communicated with tunger tube (10), the surface wrap of described columnar shape basal (291) has heater strip (294), described heater strip (294) is connected on power supply (295).
4. as claimed in claim 3 for the device of vertical pulling method produce single crystal, it is characterized in that: between described heater strip (294) and power supply (295), be provided with temp controlled meter (296), be provided with temp probe (297) in described gas heating cavity (292), described temp probe (297) is connected with temp controlled meter (296).
5. as claimed in claim 4 for the device of vertical pulling method produce single crystal, it is characterized in that: described crucible rotation lifting body (16) comprises the turning axle (161) being fixed on graphite supporting plate (17) bottom, described turning axle (161) is fixed with swing pinion (162), described turning axle (161) bottom is provided with base (163), described turning axle (161) is fixed on base (163) by bearing, described base (163) is provided with drive-motor (164), the output shaft of described drive-motor (164) is provided with driving gear (165), described driving gear (165) and swing pinion (162) intermesh, described base (163) below is provided with the lifting device (166) for making base (163) move up and down.
6., as claimed in claim 5 for the device of vertical pulling method produce single crystal, it is characterized in that: described lifting device (166) is hydraulic cylinder.
7. as claimed in claim 6 for the device of vertical pulling method produce single crystal, it is characterized in that: between the inwall of described heat-preservation cylinder (5) and lower hearth (2), be provided with insulation quilt (30), the inwall of described heat-preservation cylinder (5) scribbles thermal radiation reflecting layer (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420734895.7U CN204251758U (en) | 2014-11-27 | 2014-11-27 | For the device of vertical pulling method produce single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420734895.7U CN204251758U (en) | 2014-11-27 | 2014-11-27 | For the device of vertical pulling method produce single crystal |
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| CN204251758U true CN204251758U (en) | 2015-04-08 |
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| CN201420734895.7U Expired - Fee Related CN204251758U (en) | 2014-11-27 | 2014-11-27 | For the device of vertical pulling method produce single crystal |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107805840A (en) * | 2016-09-09 | 2018-03-16 | 上海新昇半导体科技有限公司 | A kind of crystal pulling mechanism of crystal pulling furnace |
| CN108425149A (en) * | 2018-04-13 | 2018-08-21 | 内蒙古中环光伏材料有限公司 | A kind of full nitrogen silicon single crystal crystal pulling device |
| CN110106546A (en) * | 2019-05-24 | 2019-08-09 | 浙江大学 | A kind of high finished product rate casting monocrystalline silicon growing method and thermal field structure |
| CN113136617A (en) * | 2021-04-16 | 2021-07-20 | 曲靖阳光能源硅材料有限公司 | Czochralski method single crystal furnace and melt temperature gradient control method thereof |
| CN115161769A (en) * | 2022-06-07 | 2022-10-11 | 连城凯克斯科技有限公司 | Furnace chassis and automatic crucible lifting control equipment |
-
2014
- 2014-11-27 CN CN201420734895.7U patent/CN204251758U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107805840A (en) * | 2016-09-09 | 2018-03-16 | 上海新昇半导体科技有限公司 | A kind of crystal pulling mechanism of crystal pulling furnace |
| CN108425149A (en) * | 2018-04-13 | 2018-08-21 | 内蒙古中环光伏材料有限公司 | A kind of full nitrogen silicon single crystal crystal pulling device |
| CN110106546A (en) * | 2019-05-24 | 2019-08-09 | 浙江大学 | A kind of high finished product rate casting monocrystalline silicon growing method and thermal field structure |
| CN113136617A (en) * | 2021-04-16 | 2021-07-20 | 曲靖阳光能源硅材料有限公司 | Czochralski method single crystal furnace and melt temperature gradient control method thereof |
| CN115161769A (en) * | 2022-06-07 | 2022-10-11 | 连城凯克斯科技有限公司 | Furnace chassis and automatic crucible lifting control equipment |
| CN115161769B (en) * | 2022-06-07 | 2024-04-16 | 连城凯克斯科技有限公司 | Automatic lifting control equipment for furnace bottom plate and crucible |
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Effective date of registration: 20180515 Address after: 810007 5 Kunlun East Road, Xining economic and Technological Development Zone, Qinghai Patentee after: QINGHAI TUORI NEW ENERGY TECHNOLOGY CO., LTD. Address before: No. 9, Jianye Avenue, Leshan high tech Zone, Sichuan Province Patentee before: Leshan Topraycell Co., Ltd. |
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Granted publication date: 20150408 Termination date: 20181127 |