CN110106546A - A kind of high finished product rate casting monocrystalline silicon growing method and thermal field structure - Google Patents
A kind of high finished product rate casting monocrystalline silicon growing method and thermal field structure Download PDFInfo
- Publication number
- CN110106546A CN110106546A CN201910439879.2A CN201910439879A CN110106546A CN 110106546 A CN110106546 A CN 110106546A CN 201910439879 A CN201910439879 A CN 201910439879A CN 110106546 A CN110106546 A CN 110106546A
- Authority
- CN
- China
- Prior art keywords
- seed crystal
- crystal
- silicon material
- liquid level
- clamping device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of casting monocrystalline silicon growing methods of high finished product rate: seed crystal being fixed on seed crystal clamping device, fusing is heated to the silicon material in thermal field, the height of seed crystal and top plastotype heater is kept to be located at silicon material solution liquid level or more；After the completion of melting silicon materials, seed crystal clamps framework guidance seed crystal seed crystal and immerses silicon material melt liquid level or less；When under silicon material melt liquid level seed portion melt, seed crystal clamping device lifts upwards after forming new solid liquid interface, silicon material melt from seed crystal downwards crystalline at crystal ingot；During seed crystal clamping device lifts upwards, the top heat dissipation door of thermal field is opened to both sides, and top plastotype heater is moved down with silicon material melt liquid level；After the completion of crystallization process, holding top heat dissipation door is maximum open, separates seed crystal, takes out crystal ingot.The invention also discloses a kind of thermal field structures using the above method.This method and thermal field structure can reduce low few sub- red sector truncation amount of casting single crystal silicon ingot head, tail and side piece, improve product qualification rate.
Description
Technical field
The present invention relates to a kind of technical field of solar power silicon material, especially a kind of high finished product rate casting single crystal silicon growth
Method and thermal field structure.
Background technique
Solar energy resources are abundant, widely distributed, are most potential renewable energy.Solar energy power generating is because of it
The advantages that environmental-friendly, conversion is efficiently, installation is convenient becomes one of most important Solar use mode.And in Chinese photovoltaic row
Under the joint efforts of industry, the electric cost of the degree of last decade photovoltaic power generation is substantially close to the rate for incorporation into the power network of traditional firepower.Can be with
In the future of prediction, the application market of photovoltaic power generation is by further Rapid Expansion.
Monocrystalline silicon piece and polysilicon chip are two kinds of underlying carriers of photovoltaic cell production.By czochralski method (Cz) growth, cutting
And come monocrystalline silicon piece due to crystal defect is few, minority carrier life time is high, stay in grade and by the favor of high-efficiency battery technique producing line.
Polysilicon chip, although crystal quality is lower than monocrystalline silicon piece, due to crystal ingot production capacity is big, specific energy consumption is low, the requirement to silicon material not
The features such as height, silicon wafer cost performance is high, occupies always the market share of more than half in the past few years, is most important light
Lie prostrate battery base material.
It by the adjustment of thermal field and technique, is opened in the past few years to reduce the performance difference of polysilicon chip and monocrystalline silicon piece
Half process of smelting of ingot casting is issued, process characteristic is to be laid with the seed crystal for guiding crystal growth first in crucible bottom, is put into
Other silicon materials are into crucible.In the melting silicon materials stage, seed portion fusing is kept by thermal field and technique, crystal is from seed crystal later
On complete directional solidification from below to up.Make seed crystal using particulate material and then produces high-efficiency polycrystalline technique characterized by little crystal grain, with
Monocrystalline silico briquette makees the casting monocrystalline silicon that seeded growth then grows appearance single crystal-like.
High-efficiency polycrystalline characterized by little crystal grain, so far from high volume applications, though the continuous hair of intermediate experience thermal field size
Open up (G5 upgrades to current G8), overall performance is basicly stable, with the battery conversion efficiency of monocrystalline silicon piece have 1% always~
The gap of 1.5% (absolute value), it is difficult to break through.The casting single crystal silicon technology of ingot casting and Cz monocrystalline, part silicon therein are gathered
Piece, since defect concentration is low, the alkali making herbs into wool battery process as Cz monocrystalline silicon piece is can be used in uniform orientation, is obtained and Cz monocrystalline
Substantially comparable battery conversion efficiency (difference < 0.5%), thus recognized using the casting single crystal silicon technology of Cz monocrystalline induced growth
To be the mostly important developing direction of next-generation solar power silicon material.
For the high-efficiency polycrystalline for relatively equally using half process of smelting, the difficult point of casting single crystal silicon technology is: 1) molten
The change stage passes through thermal field and technological design, so that the part of seed crystal (Cz monocrystalline) is melted；2) it by the optimization design of thermal field, reduces
The difference of solid liquid interface center and peripheral reduces the usage amount of Cz monocrystalline to reduce cost；3) seed crystal processing basis, reduces seed crystal
The generation and proliferation of edge joint position crystal defect；4) optimization of thermal field structure reduces sidewall of crucible grain nucleation and to crystals
Growth, destroy class monocrystalline crystal structure, reduce the qualification rate of casting monocrystalline silicon；5) brilliant in casting monocrystalline silicon growth course
The generation of body internal flaw and proliferation control；6) crystal ingot bottom, the low few sub- red sector in head, edge truncation and to product qualification rate
Reduction.To obtain the silicon wafer that 100% appearance is class monocrystalline, producer generallys use big crucible, increases the amputation amount at crystal ingot edge
Scheme, this further results in the decline of casting monocrystalline silicon yield rate.According to measuring and calculating, do not consider in crystal growing process due to lacking
Crystal decrease in yield caused by falling into, casting monocrystalline silicon product qualification rate are relatively common efficient also only between 45%~60% section
Polycrystalline reduces by 10%~20%, so that the processing cost of casting monocrystalline silicon significantly rises, it is the big of restriction casting single crystal silicon technology
The one of the major reasons of batch application.
On the basis of 102732947 B of patent CN thermal field structure used by half process of smelting of conventional cast monocrystalline silicon, propose
The structure design of side heater when increasing mobile, it is therefore intended that inhibit the formation of the new nucleus of crucible wall surface and the inside life of crystal
It is long.In casting monocrystalline silicon growth course, reduces the truncation amount of crystal ingot side, improve the income of crystal ingot.But it is total to quality Zhan
The low few sub- red sector in the crystal ingot head and tail portion of charge 25% or so can not make improvement, this is also Traditional Method casting ingot process can not
The technical problem avoided.
Summary of the invention
The purpose of the present invention is to provide the casting monocrystalline silicon growing methods and thermal field structure of a kind of high finished product rate, can subtract
Low few sub- red sector truncation amount of few casting single crystal silicon ingot head, tail and side piece, improve casting monocrystalline silicon product qualification rate (or at
Product rate).
The technical solution adopted by the present invention to solve the technical problems are as follows:
A kind of casting monocrystalline silicon growing method of high finished product rate, the casting monocrystalline silicon growing method the following steps are included:
(1) seed crystal is fixed on seed crystal clamping device, fusing is heated to the silicon material in thermal field, heating the melting stage,
The height of seed crystal and top plastotype heater is kept to be located at silicon material solution liquid level or more；
(2) after the completion of melting silicon materials, seed crystal clamps framework guidance seed crystal and contacts melt liquid level, and seed crystal is made to immerse silicon material melt
Below liquid level；When seed portion melts under silicon material melt liquid level, seed crystal clamping device lifts upwards after forming new solid liquid interface,
Silicon material melt from seed crystal downwards crystalline at crystal ingot；During seed crystal clamping device lifts upwards, the top heat dissipation of thermal field
Door is opened to both sides, and top plastotype heater moves down with silicon material melt liquid level and is located at silicon material melt liquid level or less；
(3) after the completion of crystallization process, holding top heat dissipation door is maximum open, separation seed crystal clamping clamping device and seed
Crystalline substance takes out crystal ingot.
In step (1), the mode to the silicon material heating fusing in thermal field is temperature programming, and is passed through protection gas
Body.
In the present invention, seed crystal is fixed on seed crystal clamping device, in step (1), that is, during melting silicon materials, seed
It is brilliant not with the silicon material or silicon material melt contacts in crucible.In step (2), that is, in crystallization process, the melting silicon materials in crucible are complete
Cheng Hou, seed crystal clamping device can drive seed crystal to move down and contact with melt liquid level；After seed portion fusing, top heat dissipation door is gradually beaten
It opens, forms the temperature gradient distribution of upper cold, lower heat in thermal field, under the induction of seed crystal, melt starts certainly along seed crystal in crucible
Upper downward crystallographic orientation；In crystallization process, crystal lifts upwards under the drive of seed crystal clamping device, and final melt is complete
Portion crystallizes and is carried on the lower part of seed crystal clamping device, and the crystal formed does not contact always with crucible；In crystallization process,
Top plastotype heater declines with melt liquid level and is declined, and maintains melt liquid level hereinafter, all solidifications or only of final melt
Retain small part high metal impurity flavoring food.In entire ingot growing process, crystal ingot is not contacted with crucible, is avoided golden in crucible
Belong to impurity to spread into crystal ingot and influence crystal ingot quality.
In step (2), the seed crystal immerses silicon material melt liquid level 5mm or less.
In step (2), by 10~30 minutes, seed portion melted under silicon material melt liquid level, formed new solid-liquid circle
Face.
In step (2), the speed that the seed crystal clamping device lifts upwards is 5~25mm/h.Seed crystal clamping device to
The speed of upper lifting is the crystallization rate of silicon material melt.
In step (2), the top plastotype heater is 20~50mm at a distance from silicon material melt liquid level.Pass through control
The position of top plastotype heater and heating power can control the growth tendency of crystal ingot around.
The seed crystal is constituted using the monocrystalline silico briquette of Cz monocrystalline processing, and the shape of seed crystal blocks can be square or length
Cube, the crystal orientation of vertical direction are<100>direction.Seed crystal is spliced into square structure, is fixed on seed crystal clamping device, each seed
It is seamlessly connected between crystal block.
The seed crystal is spliced by the cutting of vertical pulling method monocrystalline, and with a thickness of 20~30mm, cross section is square, and side length is
500~1500mm.Considering cost and practical operation, monocrystalline silico briquette thickness are selected as 20mm~30mm.
Preferably, the side length is 960mm*960mm (G6).
The present invention also provides a kind of thermal field structure of the casting monocrystalline silicon growing method of high finished product rate, the thermal field structure packet
Furnace body is included, crucible, the seed crystal clamping device moving up and down right above crucible are equipped in the furnace body and can laterally be moved
Dynamic top heat dissipation door；The side of the crucible and the outside of bottom are equipped with heater and heat preservation frame, and the heater is located at earthenware
Between crucible and heat preservation frame；The seed crystal clamping device is surrounded by plastotype heater in top moving up and down, and the top dissipates
Hot topic is located at the two sides of seed crystal clamping device；The heat preservation frame and top heat dissipation door form confined space.
The furnace body uses upper bell unfolding mode, to carry out the loading and unloaded operation of material.
In thermal field structure provided by the invention, the seed crystal clamping device is the moving component that can move up and down,
In the fusion process of silicon material in crucible, seed crystal is made to be detached from liquid level.In crystallization process: progress seeding first drives seed crystal portion
Sub-dip is moistened under high temperature silicon material melt liquid level, after seed portion fusing, then opens top heat dissipation door, crystal is given birth to downwards from seed crystal
Long, seed crystal clamping device slowly lifts upwards, final to keep in crucible melt all solidification or only remaining a small amount of high concentration metal
Impurity flavoring food.
Independence is respectively adopted in the heater and top plastotype heater that the side of the crucible and the outside of bottom are equipped with
Temperature control and power supply unit.
The size of the crucible is 1200mm*1200mm*540mm (G7) or 1350mm*1350mm*540mm (G8).
The invention has the benefit that it is different from traditional directional solidification mode, and in entire crystal growing process, the present invention
The crystal ingot that formation is grown in the method for offer is not contacted with crucible, can to avoid metal impurities to the diffusion inside crystal ingot so that
Low few sub- red sector of conventional polysilicon ingot casting head, tail and edge is greatly lowered, so as to significantly promote the conjunction of product
Lattice rate.The present invention fundamentally avoids the incorgruous crystal grain of crucible wall to the life inside crystal ingot since crystal ingot is not contacted with crucible
It is long, the problem of avoiding the incorgruous grain growth of conventional cast monocrystalline silicon, further improve the yield rate of casting monocrystalline silicon.
On the other hand, compared with traditional casting monocrystalline silicon method, since seed crystal does not connect in the entire melting stage with melt
Touching reduces the molten of silicon material because fusion temperature can be improved without the seed crystal protection problem during conventional cast monocrystalline silicon
Change the time, improves output.
On the other hand, it is different from the casting monocrystalline silicon growing method that traditional seed crystal is layed in crucible bottom, the present invention avoids
The metallic pollution from crucible and other silicon materials that seed crystal was subject in the entire melting stage, it is more convenient using rear seed crystal and amputate
Reusing afterwards, to reduce the expense of Cz single crystal seed in casting monocrystalline silicon.
On the other hand, traditional czochralski method (Cz method) growth monocrystalline silicon, the casting of method growth provided by the invention are different from
Monocrystalline silicon, crystal are grown under the induction of seed crystal completely, necking down necessary to no Cz method, shouldering technique, and Cz method crystal and earthenware
Crucible is circle, and in crystal growing process, crystal and crucible must have certain rotating requires, and the casting list of this method growth
Crystal silicon, crystal ingot be it is rectangular, crucible be it is rectangular or round, and do not need to rotate in entire crystal growth phase, crystal and crucible.
Crystal growing process of the present invention does not have the shouldering process in Cz monocrystalline, and the high monocrystalline crystal of the ingot casting grown is all lured in seed crystal
Lead lower crystallization.In addition, the growth of Cz method mentions that carry out single crystal silicon be dislocation-free single crystal, the crystal that is grown of the present invention, due to
There is no the necking down technique in Cz method, includes dislocation in crystal.
Therefore, casting monocrystalline silicon growing method provided by the present invention and thermal field structure can solve casting list from basic
Crystal silicon head, tail portion and surrounding truncation and the problem that causes finished product rate low, significantly promote the yield rate of casting monocrystalline silicon.
Detailed description of the invention
Fig. 1 is the schematic diagram of the symmetrical right half part of cross-section center of thermal field structure provided by the invention；
Fig. 2 is structural schematic diagram of the thermal field structure provided by the invention during seeding；
Fig. 3 is that thermal field structure provided by the invention is crystallizing structural schematic diagram when completing；
Wherein, 1. heat dissipation door, 2. sides heat preservation frame, 3. top plastotype heaters, 4. side heaters, 5. bottom heaters, 6.
Furnace body, 7. seed crystal clamping devices, 8. seed crystals, 9. crystal ingots, 10. melts, 11. crucibles and support part, 12. bottom insulation boards.
Specific embodiment
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
As shown in Figure 1-3, the thermal field structure of casting monocrystalline silicon growing method provided by the invention includes furnace body 6, in furnace body 6
Equipped with crucible 11 (further including the support part of crucible), the seed crystal clamping device 7 moving up and down right above crucible 11
With transversely movable top heat dissipation door 1；The outside of the side of crucible 11 and bottom is equipped with heater (including side heater 4
With bottom heater 5) and heat preservation frame (such as side heat preservation frame 2 and bottom insulation board 12), side heater 4 and bottom heater 5 are located at
Between crucible 11 and side heat preservation frame 2 or bottom insulation board 12；Seed crystal clamping device 7 is surrounded by top plastotype moving up and down and adds
Hot device 3, top heat dissipation door 1 are located at the two sides of seed crystal clamping device 7；It keeps the temperature frame and top heat dissipation door 1 forms confined space.
The method of above-mentioned thermal field structure growth casting monocrystalline silicon are as follows:
(1) seed crystal 8 is fixed on seed crystal clamping device 7, fusing is heated to the silicon material in thermal field, melt rank in heating
Section keeps the height of seed crystal 7 and top plastotype heater 3 to be located at 10 liquid level of silicon material solution or more；
(2) after the completion of melting silicon materials, seed crystal clamps framework 7 and seed crystal 8 is guided to contact 10 liquid level of silicon material solution, soaks seed crystal 8
Enter 10 liquid level of silicon material melt or less；After the fusing of 8 part of seed crystal, seed crystal clamping device 7 lifts upwards, and silicon material melt 10 is from seed crystal
8 downwards crystallization form crystal ingot；During seed crystal clamping device 7 lifts upwards, the top heat dissipation door 1 of thermal field is beaten to both sides
It opens, top plastotype heater 3 moves down with 10 liquid level of silicon material melt and is located at silicon material melt liquid level or less；
(3) after the completion of crystallization process, holding top heat dissipation door is maximum open, separation seed crystal clamping clamping device 7 and seed
Crystalline substance 8 takes out crystal ingot 9.
Embodiment 1
It in the present embodiment, is the convenience for keeping subsequent 9 evolution process of crystal ingot, using current main-stream G6 crystal ingot size
Carry out crystal growth.Seed crystal 8 is 165mm*165mm*25mm using 36 block sizes, and crystal orientation is the Cz monocrystalline silico briquette in<100>direction,
It is fixed on seed crystal clamping device 7, close adjacent, no macroscopic gap between each square seed crystal.Crucible 11 uses tradition G7
The high-purity crucible in five face of size is packed into silicon material comprising seed crystal and always weighs about 810kg.Bell in opening puts the crucible 11 equipped with silicon material
It sets in thermal field.8 lower surface of seed crystal is not contacted with the silicon material in crucible 11.
As shown in Figure 1, top heat dissipation door 1 is in off state, the upper bell of furnace body 6 is closed, 10pa or less is evacuated down to.Journey
Sort run, opens side heater 4 and bottom heater 5 is stepped up to 1520 DEG C according to technique heating curve and keeps this
Temperature is until the fusing of silicon material fine melt is completed.When temperature is increased to 1200 DEG C in furnace body 6, start to be passed through protective gas (argon gas),
Flow is 20~50L/min, 400~600mbar of controling of the pressure of the oven.
After the completion of fusing, seed crystal clamping device 7 drives seed crystal 7 to move down and invade the liquid level 5mm or less of silicon material melt 10.About
After 30 minutes, top heat dissipation door 1 opens 100mm to both sides；Seed crystal clamping device 7 is moved up with 5~25mm/h speed, top
Portion's heat dissipation door 1 is opened with 5~15mm/h speed to both sides, and unilateral maximum moving distance is 500mm.Top plastotype heater 3 is
The growth tendency of crystal ingot around controls heating power, and moves down maintenance and silicon material melt 10 according to 8 range of lift of seed crystal
Liquid level distance is 30~50mm.Crystallization process is 30h.
After the completion of crystallization process, heater gradually cools down according to technique initialization curve and final plant closure, and top 1 is kept to radiate
Door is maximum open, is cooled to 350 DEG C, it is 1000mbar that furnace pressure, which increases,.Bell in opening, seed crystal clamp clamping device 7 and seed
Crystalline substance 8 separates, and takes out crystal ingot 9.The size of crystal ingot 9 is about 980mm*980mm*360mm (containing seed crystal), 11 bottom residue silicon material of crucible
About 3kg, total production cycle are about 60 hours.After crystal ingot 9 is cooled to room temperature, firstly, by the seed crystal end integral cutting of crystal ingot 9
30mm is used as big blocky seed crystal recycling.The other end, truncation 20mm are used as reclaimed materials.Crystal ingot passes through excavation machine, cutting
It is used at 159mm*159mm*310mm finished product stick, through detecting, crystal bar appearance uniform orientation, no incorgruous crystal grain is generated.Casting single crystal
Silicon final finished rate is 81%, promotes 20% or more compared with conventional cast monocrystalline silicon yield rate.
Embodiment 2
For the convenience for keeping subsequent crystal ingot evolution process, crystal growth is carried out using current main-stream G6 crystal ingot size.
Seed crystal is 125mm*125mm*25mm using 64 block sizes, and crystal orientation is the Cz monocrystalline silico briquette in<100>direction, is fixed on seed crystal clamping
In mechanism, close adjacent, no macroscopic gap between each square seed crystal.Crucible uses the five high-purity crucible in face of tradition G7 size,
Silicon material, which is packed into, comprising seed crystal always weighs about 810kg.Using technical process same as Example 1, after crystal ingot is come out of the stove, size is about
980mm*980mm*360mm (contains seed crystal), crucible bottom residue silicon material about 3kg.After crystal ingot is cooled to room temperature, equally by crystal ingot seed
Brilliant end integral cutting 30mm is used as big blocky seed crystal recycling.The other end, truncation 20mm are used as reclaimed materials.Crystal ingot warp
Excavation machine is crossed, the use of 159mm*159mm*310mm finished product stick, through detecting, crystal bar appearance uniform orientation, without incorgruous crystal grain are cut into
It generates.Casting monocrystalline silicon final finished rate about 82%.
Embodiment 3
To reduce Cz monocrystalline use cost, the whole seed crystal blocks recycled using embodiment one, seed as a whole after cleaning
Crystalline substance uses.It will be fixed on seed crystal clamping device first, and using G7 crucible, always weigh about 810kg comprising seed crystal silicon material.Furnace in opening
Lid places the crucible equipped with silicon material in thermal field.Seed crystal lower surface is not contacted with crucible silicon material.Using same as Example 1
Technical process, total production cycle are about 60 hours, after coming out of the stove, and crystal ingot size is about 980mm*980mm*360mm (containing seed crystal), earthenware
Crucible bottom residue silicon material about 3kg.After crystal ingot is cooled to room temperature, first by crystal ingot seed crystal end integral cutting 30mm, as big bulk
Seed crystal recycling uses.The other end, truncation 20mm are used as reclaimed materials.Crystal ingot passes through excavation machine, is cut into 159mm*159mm*
310mm finished product stick uses, and through detecting, crystal bar appearance uniform orientation, no incorgruous crystal grain is generated.Casting monocrystalline silicon final finished rate is
80%.
Claims (8)
1. a kind of casting monocrystalline silicon growing method of high finished product rate, which is characterized in that the casting monocrystalline silicon growing method includes
Following steps:
(1) seed crystal is fixed on seed crystal clamping device, fusing is heated to the silicon material in thermal field, in the heating melting stage, kept
The height of seed crystal and top plastotype heater is located at silicon material solution liquid level or more；
(2) after the completion of melting silicon materials, seed crystal clamps framework guidance seed crystal and contacts melt liquid level, and seed crystal is made to immerse silicon material melt liquid level
Below；When seed portion melts under silicon material melt liquid level, seed crystal clamping device lifts upwards after forming new solid liquid interface, silicon material
Melt from seed crystal downwards crystalline at crystal ingot；During seed crystal clamping device lifts upwards, the top heat dissipation door of thermal field to
Both sides are opened, and top plastotype heater moves down with silicon material melt liquid level and is located at silicon material melt liquid level or less；
(3) after the completion of crystallization process, holding top heat dissipation door is maximum open, separation seed crystal clamping clamping device and seed crystal, is taken
Crystal ingot out.
2. the casting monocrystalline silicon growing method of high finished product rate according to claim 1, which is characterized in that in step (2),
The seed crystal immerses silicon material melt liquid level 5mm or less.
3. the casting monocrystalline silicon growing method of high finished product rate according to claim 1, which is characterized in that in step (2),
The speed that the seed crystal clamping device lifts upwards is 5~25mm/h.
4. the casting monocrystalline silicon growing method of high finished product rate according to claim 1, which is characterized in that in step (2),
The top plastotype heater is 20~50mm at a distance from silicon material melt liquid level.
5. the casting monocrystalline silicon growing method of high finished product rate according to claim 1, which is characterized in that the seed crystal is by straight
The cutting of daraf(reciprocal of farad) monocrystalline is spliced, and with a thickness of 20~30mm, cross section is square, and side length is 500~1500mm.
6. a kind of thermal field structure of the casting monocrystalline silicon growing method using any high finished product rate of claim 1-5,
It is characterized in that, the thermal field structure includes furnace body, and crucible, moving up and down right above crucible is equipped in the furnace body
Seed crystal clamping device and transversely movable top heat dissipation door；The side of the crucible and the outside of bottom are equipped with heater and guarantor
Warm frame, the heater are located between crucible and heat preservation frame；The seed crystal clamping device is surrounded by top moving up and down
Plastotype heater, the top heat dissipation door are located at the two sides of seed crystal clamping device；The heat preservation frame and top heat dissipation door form close
Close space.
7. the thermal field structure of the casting monocrystalline silicon growing method of high finished product rate according to claim 6, which is characterized in that institute
Independent temperature control is respectively adopted in the heater and top plastotype heater that the outside of the side and bottom of stating crucible is equipped with
And power supply unit.
8. the thermal field structure of the casting monocrystalline silicon growing method of high finished product rate according to claim 6, which is characterized in that institute
The size for stating crucible is 1200mm*1200mm*540mm or 1350mm*1350mm*540mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910439879.2A CN110106546B (en) | 2019-05-24 | 2019-05-24 | High-yield casting monocrystalline silicon growth method and thermal field structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910439879.2A CN110106546B (en) | 2019-05-24 | 2019-05-24 | High-yield casting monocrystalline silicon growth method and thermal field structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110106546A true CN110106546A (en) | 2019-08-09 |
| CN110106546B CN110106546B (en) | 2021-04-27 |
Family
ID=67492137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910439879.2A Active CN110106546B (en) | 2019-05-24 | 2019-05-24 | High-yield casting monocrystalline silicon growth method and thermal field structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110106546B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113417006A (en) * | 2021-06-22 | 2021-09-21 | 山东天岳先进科技股份有限公司 | Preparation device and method for improving seed crystal quality |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
| CN101194051A (en) * | 2005-06-10 | 2008-06-04 | 埃尔凯姆太阳能公司 | Method and apparatus for refining a molten material |
| CN102758258A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Stretching type heat shield for single crystal furnace |
| CN204251758U (en) * | 2014-11-27 | 2015-04-08 | 乐山新天源太阳能科技有限公司 | For the device of vertical pulling method produce single crystal |
| CN107923064A (en) * | 2015-07-17 | 2018-04-17 | 硅电子股份公司 | Method for molten solids silicon |
| CN208857390U (en) * | 2018-10-10 | 2019-05-14 | 宁夏银和新能源科技有限公司 | Single crystal growing furnace with material insulation cover |
-
2019
- 2019-05-24 CN CN201910439879.2A patent/CN110106546B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
| CN101194051A (en) * | 2005-06-10 | 2008-06-04 | 埃尔凯姆太阳能公司 | Method and apparatus for refining a molten material |
| CN105088330A (en) * | 2005-06-10 | 2015-11-25 | 埃尔凯姆太阳能公司 | Method and apparatus for refining amolten material |
| CN102758258A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Stretching type heat shield for single crystal furnace |
| CN204251758U (en) * | 2014-11-27 | 2015-04-08 | 乐山新天源太阳能科技有限公司 | For the device of vertical pulling method produce single crystal |
| CN107923064A (en) * | 2015-07-17 | 2018-04-17 | 硅电子股份公司 | Method for molten solids silicon |
| CN208857390U (en) * | 2018-10-10 | 2019-05-14 | 宁夏银和新能源科技有限公司 | Single crystal growing furnace with material insulation cover |
Non-Patent Citations (1)
| Title |
|---|
| 韩至成等: "《太阳能级硅提纯技术与装备》", 31 October 2011, 冶金工业出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113417006A (en) * | 2021-06-22 | 2021-09-21 | 山东天岳先进科技股份有限公司 | Preparation device and method for improving seed crystal quality |
| CN113417006B (en) * | 2021-06-22 | 2022-11-29 | 山东天岳先进科技股份有限公司 | Preparation device and method for improving seed crystal quality |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110106546B (en) | 2021-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102268724B (en) | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell | |
| CN102277618B (en) | Polysilicon ingot, manufacturing method and growing furnace thereof, as well as bottom plate and solar cell of growing furnace | |
| CN102936747B (en) | Method for casting ingot of pseudo-single crystal through large-sized crucible | |
| CN103882517A (en) | Preparation method of polycrystalline silicon ingot | |
| CN103215633A (en) | Method for casting ingots by polycrystalline silicon | |
| CN103343387B (en) | A kind of polycrystalline silicon ingot or purifying furnace and casting ingot method thereof | |
| CN103014833A (en) | Preparation method of silicon ingot | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN102644108A (en) | Charging method for growing silicon crystal by using casting process and process for growing silicon crystal | |
| CN102260900A (en) | Device for improving consistency of longitudinal resistivity of single crystal silicon and treatment process thereof | |
| CN103806101A (en) | Growth method and equipment of square sapphire crystal | |
| CN110205672B (en) | Monocrystalline silicon-like crystal growth method and thermal field structure | |
| CN103132142B (en) | Polycrystal silicon ingot and manufacture method thereof | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN202054920U (en) | Device for growing single-crystal silicon by directional solidification method | |
| CN103074669A (en) | Polycrystalline silicon ingot, preparation method thereof and polycrystalline silicon chip | |
| CN103726105A (en) | Growing apparatus and method for Ti sapphire crystal | |
| CN110106546A (en) | A kind of high finished product rate casting monocrystalline silicon growing method and thermal field structure | |
| CN201495107U (en) | Polycrystal furnace with high-quality purification polysilicon | |
| CN202144523U (en) | Device for increasing consistency of longitudinal resistivity of mono-crystal silicon | |
| CN106048718A (en) | Polycrystalline silicon semi-casting ingot impurity removing method | |
| CN102817071A (en) | Preparation technology of heat radiation resistant Czochralski polysilicon or monocrystalline silicon | |
| CN203174222U (en) | Thermal field structure of polycrystalline silicon ingot casting furnace | |
| CN106119956B (en) | A kind of polysilicon fritting casting ingot method | |
| CN202323115U (en) | Side thermal field structure of polycrystalline silicon ingot furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |