CN203174222U - Thermal field structure of polycrystalline silicon ingot casting furnace - Google Patents
Thermal field structure of polycrystalline silicon ingot casting furnace Download PDFInfo
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- CN203174222U CN203174222U CN 201320151089 CN201320151089U CN203174222U CN 203174222 U CN203174222 U CN 203174222U CN 201320151089 CN201320151089 CN 201320151089 CN 201320151089 U CN201320151089 U CN 201320151089U CN 203174222 U CN203174222 U CN 203174222U
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- silicon ingot
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Abstract
The utility model relates to a thermal field structure of a polycrystalline silicon ingot casting furnace. The thermal field structure comprises a furnace body, a heat insulation cage arranged inside the furnace body, a heat conducting block arranged inside the furnace body and used for placing a crucible, and a support column fixed inside the furnace body and used for supporting the heat conducting block, wherein the heat insulation cage comprises a side heat insulation cage, a heat insulation top plate and a heat insulation bottom plate; the heat conducting block is positioned between the heat insulation top plate and the heat insulation bottom plate; and a graphite plate is further arranged between the heat conducting block and the heat insulation bottom plate. According to the thermal field structure of the polycrystalline silicon ingot casting furnace, the graphite plate is arranged under the heat conducting block; during the crystal growth stage, heat is radiated to the graphite plate from the bottom of the heat conducting plate; the heat conductivity of the graphite plate is high, the transverse temperature gradient of the graphite plate is extremely small, the heat can be uniformly radiated through the graphite plate, and the transverse temperature gradient during the ingot casting process can be reduced to the maximum extent, so that the stresses inside silicon ingots are reduced.
Description
Technical field
The utility model belongs to photovoltaic equipment preparation field, is specifically related to a kind of thermal field structure of polycrystalline silicon ingot or purifying furnace.
Background technology
Utilizing directional solidification method to produce solar energy polycrystalline silicon is the main production method of present solar energy photovoltaic material, in the polycrystal silicon ingot production process, with melting in the quartz crucible of polycrystalline silicon raw material in existing ingot furnace, reduce by temperature then, make the melted silicon nucleating growth, form polycrystal silicon ingot.In the process of growth of silicon ingot, no matter be the mode that upwards promotes heat-insulation cage, still heat insulation bottom board is to the mode that descends, heat mainly around heat-conducting block and the center outwards lost, but this radiating mode can cause the thermograde at crucible sidepiece and center bigger, the silicon ingot crystals stress that growth obtains is bigger, cause defective propagation in the long brilliant process easily, silicon ingot cracking in the evolution process, and a series of influence such as silicon chip fragment in slicing processes, the yield rate that these have greatly reduced ingot casting has increased production cost.
The utility model content
Based on this, be necessary to provide a kind of thermal field structure that can reduce the polycrystalline silicon ingot or purifying furnace of ingot casting internal stress.
A kind of thermal field structure of polycrystalline silicon ingot or purifying furnace, comprise body of heater, place the interior heat-insulation cage of described body of heater, place in the described body of heater in order to the heat-conducting block of placing crucible, the pillar that is fixed on the described heat-conducting block of support in the described body of heater, described heat-insulation cage comprises side heat-insulation cage, heat insulation top board and heat insulation bottom board, described heat-conducting block also is provided with graphite cake between described heat-conducting block and the described heat insulation bottom board between described heat insulation top board and heat insulation bottom board.
Among embodiment, the thickness of described graphite cake is 0.5～1cm therein.
Among embodiment, described graphite cake is fixed on the described pillar therein.
Among embodiment, the size of described graphite cake is more than or equal to the size of described heat-conducting block therein.
Among embodiment, be provided with the soft felt of insulation around the bottom of described graphite cake therein, the soft felt of described insulation extends and protrudes the edge of described graphite cake towards described side heat-insulation cage.
Among embodiment, described side heat-insulation cage bottom is provided with the insulation bar that inwardly protrudes out therein, and in the long brilliant stage, described insulation bar and the soft felt of described insulation are with described heat-insulation cage closed bottom.
Among embodiment, described side heat-insulation cage is fixed in the described body of heater therein, and described heat insulation bottom board liftably is installed in the described body of heater.
Among embodiment, be connected with the lifting connecting rod in the described body of heater therein, described side heat-insulation cage is suspended to described lifting connecting rod and controls lifting by described lifting connecting rod, and described heat insulation bottom board is fixed on the described pillar.
The thermal field structure of above-mentioned polycrystalline silicon ingot or purifying furnace, below heat-conducting block, be provided with graphite cake, in the long brilliant stage, heat is radiated to graphite cake from the heat-conducting block bottom, because the thermal conductivity height of graphite cake, the transverse temperature gradient of graphite cake is very little, and heat is by graphite cake homogeneous radiation heat, can at utmost reduce the transverse temperature gradient in the ingot casting process, thereby reduce the stress in the silicon ingot.
In addition, be provided with the soft felt of insulation around the graphite cake bottom, suitable size area heat radiation in the middle of the graphite cake bottom is only stayed, be incubated soft felt and can reduce heat scattering and disappearing around graphite cake, reach purpose of energy saving, solid-liquid interface in the time of also can regulating the length crystalline substance simultaneously is convex, is conducive to improve the impurities removal ability of casting ingot process.
Description of drawings
Fig. 1 is the synoptic diagram of the polycrystalline silicon ingot or purifying furnace of an embodiment in the fusion stage;
Fig. 2 is the synoptic diagram of the polycrystalline silicon ingot or purifying furnace of an embodiment in the long brilliant stage;
Fig. 3 is that the polycrystalline silicon ingot or purifying furnace of an embodiment is at the synoptic diagram of cooling stages.
Embodiment
Please refer to Fig. 1 to Fig. 3, the polycrystalline silicon ingot or purifying furnace of an embodiment comprises body of heater 110, place heat-insulation cage 120 in the body of heater 110, place the heat-conducting block 130 that is used for placing crucible 200 in the body of heater 110, be fixed on body of heater 110 bottoms be used for supporting heat-conducting block 130 pillar 140, be movably connected on body of heater 110 lifting connecting rod 150, use the well heater 160 that crucible 200 heated from top and sidepiece, be positioned at the graphite cake 170 of heat-conducting block 130 belows and be arranged on the soft felt 180 of insulation of graphite cake 170 bottoms.
Heat-insulation cage 120 comprises the heat insulation top board 122 that is fixed in the body of heater 110, be suspended to the side heat-insulation cage 124 that promotes connecting rod 150 and be fixed on heat insulation bottom board 126 on the pillar 140.In the present embodiment, by promoting 124 liftings of connecting rod 150 control side heat-insulation cages, make heat-insulation cage 120 seal or open, to heat respectively and the long brilliant stage.
Heat-conducting block 130 is used for placing the crucible 200 that fills the silicon material, and it is fixed in the top of pillar 140 and is between heat insulation top board 122 and the heat insulation bottom board 126.
Be incubated soft felt 180 be arranged at graphite cake 170 bottoms around, make graphite cake 170 bottoms only reserve suitable size in the mid-way zone for heat radiation, be incubated soft felt 180 generally ringwise.Please refer to Fig. 1 to Fig. 3, be incubated the edge that soft felt 180 protrudes graphite cake 170, so the soft felt 180 of insulation than heat-conducting block 130 and graphite cake 170 in the horizontal more close to side heat-insulation cage 124, so, in fusing and long brilliant stage, can reduce heat from the loss of graphite cake 170 sidepieces, solid-liquid interface is convex in the time of also can regulating the length crystalline substance simultaneously, is conducive to improve the impurities removal ability of casting ingot process as far as possible.
In addition, side heat-insulation cage 124 bottoms also are provided with the insulation bar 190 that inwardly protrudes out, to avoid heat to lose from side heat-insulation cage 124 bottoms in fusion stage and long brilliant stage.In the long brilliant stage, because the existence of insulation bar 190 and the soft felt 180 of insulation, heat-insulation cage 120 bottoms still are in closure state, can further reduce calorific loss, reach energy-conservation purpose.
Please refer to Fig. 1, heat-insulation cage 120 is in closure state, utilizes the silicon material in the well heater 160 heat fused crucibles 200 this moment.Be incubated soft felt 180 and can avoid heat from the loss of graphite cake 170 sidepieces, reach purpose of energy saving.
Please refer to Fig. 2, after fusing finishes, rise by promoting connecting rod 150 control side heat-insulation cages 124, enter the long brilliant stage.Be incubated soft felt 180 and be incubated bar 190 and can contact with each other, to form enclosed cavities jointly with graphite cake 170, side heat-insulation cage 124, heat insulation top board 122, so can reduce calorific loss, reach purpose of energy saving; In addition, because the thermal conductivity height of graphite cake 170, therefore the transverse temperature gradient on the graphite cake 170 is little, heat is evenly distributed at graphite cake 170, heat radiation scatters and disappears and can keep evenly at utmost reducing the transverse temperature gradient in the ingot casting process like this, thereby reduces the stress in the silicon ingot, solid-liquid interface when regulating the length crystalline substance simultaneously is convex, is conducive to improve the impurities removal ability of casting ingot process.Please refer to Fig. 3, long brilliant the end, side heat-insulation cage 124 continues to promote, and enters cooling stages.
The polycrystalline silicon ingot or purifying furnace 100 of above-described embodiment, in the long brilliant stage, what take is the mode that promotes side heat-insulation cage 124.It may be noted that the long brilliant stage, also can take side heat-insulation cage 124 motionless, the mode that heat insulation bottom board 126 is descended, this mode also is the industry common technology, repeats no more.Because the existence of graphite cake 170 can at utmost reduce the stress in the silicon ingot equally, and improve the impurities removal ability of casting ingot process.
The above embodiment has only expressed several embodiment of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model claim.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the utility model design, can also make some distortion and improvement, these all belong to protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be as the criterion with claims.
Claims (8)
1. the thermal field structure of a polycrystalline silicon ingot or purifying furnace, comprise body of heater, place the interior heat-insulation cage of described body of heater, place in the described body of heater in order to the heat-conducting block of placing crucible, the pillar that is fixed on the described heat-conducting block of support in the described body of heater, described heat-insulation cage comprises side heat-insulation cage, heat insulation top board and heat insulation bottom board, described heat-conducting block is between described heat insulation top board and heat insulation bottom board, it is characterized in that, also be provided with graphite cake between described heat-conducting block and the described heat insulation bottom board.
2. the thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1 is characterized in that, the thickness of described graphite cake is 0.5～1cm.
3. the thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1 is characterized in that, described graphite cake is fixed on the described pillar.
4. the thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1 is characterized in that, the size of described graphite cake is more than or equal to the size of described heat-conducting block.
5. the thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 1 is characterized in that, is provided with the soft felt of insulation around the bottom of described graphite cake, and the soft felt of described insulation extends and protrude the edge of described graphite cake towards described side heat-insulation cage.
6. the thermal field structure of polycrystalline silicon ingot or purifying furnace according to claim 5 is characterized in that, described side heat-insulation cage bottom is provided with the insulation bar that inwardly protrudes out, and in the long brilliant stage, described insulation bar and the soft felt of described insulation are with described heat-insulation cage closed bottom.
7. according to the thermal field structure of the described polycrystalline silicon ingot or purifying furnace of arbitrary claim in the claim 1 to 6, it is characterized in that described side heat-insulation cage is fixed in the described body of heater, described heat insulation bottom board liftably is installed in the described body of heater.
8. according to the thermal field structure of the described polycrystalline silicon ingot or purifying furnace of arbitrary claim in the claim 1 to 6, it is characterized in that, be connected with the lifting connecting rod in the described body of heater, described side heat-insulation cage is suspended to described lifting connecting rod and by described lifting connecting rod control lifting, described heat insulation bottom board is fixed on the described pillar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320151089 CN203174222U (en) | 2013-03-28 | 2013-03-28 | Thermal field structure of polycrystalline silicon ingot casting furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320151089 CN203174222U (en) | 2013-03-28 | 2013-03-28 | Thermal field structure of polycrystalline silicon ingot casting furnace |
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| CN203174222U true CN203174222U (en) | 2013-09-04 |
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| CN 201320151089 Expired - Lifetime CN203174222U (en) | 2013-03-28 | 2013-03-28 | Thermal field structure of polycrystalline silicon ingot casting furnace |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
| CN107299391A (en) * | 2017-07-12 | 2017-10-27 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace cooling platform and polycrystalline ingot furnace |
| CN112030227A (en) * | 2019-05-15 | 2020-12-04 | 中南大学 | Thermal field structure of polycrystalline silicon ingot furnace |
| CN117822090A (en) * | 2022-09-29 | 2024-04-05 | 江苏协鑫硅材料科技发展有限公司 | Purification detection method of impurity-containing silicon material, purification ingot and application of purification ingot |
| CN118308779A (en) * | 2024-06-11 | 2024-07-09 | 北京镓创科技有限公司 | Gallium oxide single crystal and growth device and growth method thereof |
-
2013
- 2013-03-28 CN CN 201320151089 patent/CN203174222U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
| CN107299391A (en) * | 2017-07-12 | 2017-10-27 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace cooling platform and polycrystalline ingot furnace |
| CN112030227A (en) * | 2019-05-15 | 2020-12-04 | 中南大学 | Thermal field structure of polycrystalline silicon ingot furnace |
| CN117822090A (en) * | 2022-09-29 | 2024-04-05 | 江苏协鑫硅材料科技发展有限公司 | Purification detection method of impurity-containing silicon material, purification ingot and application of purification ingot |
| CN118308779A (en) * | 2024-06-11 | 2024-07-09 | 北京镓创科技有限公司 | Gallium oxide single crystal and growth device and growth method thereof |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20130904 |
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| CX01 | Expiry of patent term |