CN202989330U - Novel polycrystalline furnace heating device - Google Patents
Novel polycrystalline furnace heating device Download PDFInfo
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- CN202989330U CN202989330U CN2012205485236U CN201220548523U CN202989330U CN 202989330 U CN202989330 U CN 202989330U CN 2012205485236 U CN2012205485236 U CN 2012205485236U CN 201220548523 U CN201220548523 U CN 201220548523U CN 202989330 U CN202989330 U CN 202989330U
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Abstract
A novel polycrystalline furnace heating device comprises an outer shell, a thermal field device, a heating device, a vacuum pumping device and a suspension supporting device. The thermal field device comprises a heat insulating cage, an outer heat insulation layer, an inner heat insulation layer, a crucible bottom plate, a heat exchange platform side portion heat insulation strip, a heat exchange platform, a bottom heat insulation layer, a heat insulation platform bottom insulation layer and a top heat insulation layer. When crystallization orientation is needed, the heat insulating cage is lifted slowly, the bottom heat insulation layer is separated from the heat exchange platform bottom insulation layer to generate a gap, a large amount of radiating heat energy can be radiated from the gap through the heat exchange platform, a temperature gradient which is vertically and evenly distributed is formed on the crystallization face of silicon fluid, controlling of heat radiation and heating is achieved to enable the crystal solidification of the silicon fluid to be effectively controlled, and therefore polycrystalline silicon ingot castings fitting the using demands are produced.
Description
Technical field:
The utility model relates to the manufacturing installation of polycrystal silicon ingot, particularly a kind of New Polycrystalline stove heating unit.
Background technology:
Polycrystalline silicon ingot or purifying furnace is that polycrystalline silicon material is converted into the necessary equipment in the polysilicon ingot process process, and polycrystal silicon ingot is the basic material in photovoltaic generation and semicon industry after art breading.Polycrystal silicon ingot is as the critical support material of advanced information society, is one of most important polycrystalline material in the world at present, and it is not only the major function material of development computer and unicircuit, is also the major function material that photovoltaic generation utilizes sun power.
In the polycrystalline silicon ingot casting process, dissolve, long crystalline substance, annealing operation all require to carry out under the equally distributed state of thermograde, therefore need to require to control temperature distribution in cavity according to heating process, New Polycrystalline stove heating unit can accurately be controlled the interior thermograde of cavity and evenly distribute, thus the processing requirement of realization.
Summary of the invention:
Given this, be necessary to design a kind of New Polycrystalline stove heating unit.
A kind of New Polycrystalline stove heating unit comprises: shell, thermal-field device, heating unit, vacuum extractor, holder suspension supporting device; Wherein, shell comprises upper cavity and lower chamber; Holder suspension supporting device comprises lifting rod, hanger and support bar; Support bar vertically is fixed in outer casing bottom, and lifting rod is vertically connected at enclosure, and the lifting rod top is connected with the lifting gear of cover top portion, and the lifting rod bottom is connected with the hanger that is arranged on the thermal-field device end face; The rectangular parallelepiped cavity of thermal-field device for opening from bottom surface, thermal-field device is by being connected with lifting rod at its top and the bottom is connected with support bar and fixes suspention in the enclosure, heating unit is positioned at thermal-field device and covers on quartz crucible, and vacuum means is outer and connected by hole corresponding on pipeline and shell setting in shell.
Preferably, thermal-field device comprises: thermal insulation layer, top thermal insulation layer bottom heat-insulation cage, external thermal insulation, inner thermal insulating layer, crucible bottom plate, heat exchange platform sidepiece heat preservation strip, heat exchange platform, bottom thermal insulation layer, heat exchange platform; Wherein, heat-insulation cage is the rectangular parallelepiped cavity, its top and bottom opening; Be provided with one deck near the external thermal insulation of heat-insulation cage at the heat-insulation cage inwall, be provided with again inner thermal insulating layer in the inside near external thermal insulation; Be provided with the top thermal insulation layer at the heat-insulation cage top open part, be provided with the bottom thermal insulation layer of a circle square type band shape at heat-insulation cage bottom end opening place; Be fixed with heat exchange platform bottom thermal insulation layer in support bar middle part level, its size will adapt with bottom thermal insulation layer inner ring; Be provided with successively from top to bottom crucible bottom plate, heat exchange platform sidepiece heat preservation strip, heat exchange platform at supporting bar top, wherein crucible bottom plate is used for holding quartz crucible.
Preferably, heating unit comprises top firing body, side heat body, copper electrode, Graphite Electrodes, retaining clip, thermal baffle; Wherein, three retaining clips place, sideline that is seated in the thermal baffle lower surface triangular in shape, the retaining clip bottom is fixed wtih four sections side heat bodies, and every section side heat body is " W " type, and four sections side heat bodies join end to end and form the rectangle that matches with quartz crucible of hollow; The top firing body also is " W " type bending and is positioned under thermal baffle parallelly with thermal baffle, and the top firing body directly is connected with the Graphite Electrodes that passes thermal baffle; The copper electrode bottom is passed the top thermal insulation layer and is connected with retaining clip with Graphite Electrodes on thermal baffle, and the copper electrode top is connected with supply lead by the hole of cover top portion.
Preferably, vacuum extractor adopts flange to be connected with shell.
the thermal-field device that the utility model can seal/open by the bottom is set, when the needs crystallographic orientation, slowly mention heat-insulation cage, bottom thermal insulation layer and heat exchange platform bottom thermal insulation layer disengaging produce the gap, from then on a large amount of radiant heat energies can distribute in the gap through heat exchange platform, at this moment, heat exchange must occur in heat exchange platform and quartz crucible, thereby make the silicon liquid generation crystalline polamer of the bottom of quartz crucible, heat exchange platform sidepiece heat preservation strip is divided into up and down two portions with the thermal field cavity simultaneously, top and inner thermal insulating layer remain the environment of a sealing, thereby form a high-temperature zone, can keep the temperature that technique needs, and the bottom is due to thermolysis, form a cold zone, like this in whole thermal field cavity, crystal plane at silicon liquid forms the thermograde that a Vertical Uniform distributes, dispel the heat by control, heating is effectively controlled the crystallization and freezing of silicon liquid, thereby produce the polycrystalline silicon ingot casting that meets service requirements.
Description of drawings:
Accompanying drawing 1 is the sectional view of the New Polycrystalline stove heating unit of a better embodiment.
Accompanying drawing 2 is the sectional views in the long brilliant stage of New Polycrystalline stove heating unit of a better embodiment.
Accompanying drawing 3 is the stereographic maps after the heating unit of a better embodiment is inverted.
In figure: thermal insulation layer 37, top thermal insulation layer 39, top firing body 41, side heat body 42, copper electrode 46, Graphite Electrodes 45, retaining clip 43, thermal baffle 44 bottom upper cavity 11, lower chamber 12, flange 13, lifting rod 21, hanger 22, support bar 23, heat-insulation cage 31, external thermal insulation 38, inner thermal insulating layer 32, crucible bottom plate 33, heat exchange platform sidepiece heat preservation strip 34, heat exchange platform 35, bottom thermal insulation layer 36, heat exchange platform.
Embodiment:
As shown in Figure 1 and Figure 2, a kind of New Polycrystalline stove heating unit comprises: shell, thermal-field device, heating unit, vacuum extractor, holder suspension supporting device; Wherein, shell comprises upper cavity 11 and lower chamber 12; Holder suspension supporting device comprises lifting rod 21, hanger 22 and support bar 23; Support bar 23 vertically is fixed in outer casing bottom, and lifting rod 21 is vertically connected at enclosure, and lifting rod 21 tops are connected with the lifting gear of cover top portion, and lifting rod 21 bottoms are connected with the hanger 22 that is arranged on the thermal-field device end face; The rectangular parallelepiped cavity of thermal-field device for opening from bottom surface, thermal-field device is by being connected with lifting rod 21 at its top and the bottom is connected with support bar 23 and fixes suspention in the enclosure, heating unit is positioned at thermal-field device and covers on quartz crucible, and vacuum means is outer and connected by hole corresponding on pipeline and shell setting in shell.
In the present embodiment, thermal-field device comprises: thermal insulation layer 37, top thermal insulation layer 39 bottom heat-insulation cage 31, external thermal insulation 38, inner thermal insulating layer 32, crucible bottom plate 33, heat exchange platform sidepiece heat preservation strip 34, heat exchange platform 35, bottom thermal insulation layer 36, heat exchange platform; Wherein, heat-insulation cage 31 is the rectangular parallelepiped cavity, and this cavity is the thermal field cavity, its top and bottom opening; Be provided with one deck near the external thermal insulation 38 of heat-insulation cage 31 at heat-insulation cage 31 inwalls, be provided with again inner thermal insulating layer 32 in the inside near external thermal insulation 38; Be provided with top thermal insulation layer 39 at heat-insulation cage 31 top open parts, be provided with the bottom thermal insulation layer 36 of a circle square type band shape at heat-insulation cage 31 bottom end opening places; Be fixed with heat exchange platform bottom thermal insulation layer 37 in support bar 23 middle part levels, its size will adapt with bottom thermal insulation layer 36 inner rings; Be provided with successively from top to bottom crucible bottom plate 33, heat exchange platform sidepiece heat preservation strip 34, heat exchange platform 35 on support bar 23 tops, wherein crucible bottom plate 33 is used for holding quartz crucible.
In conjunction with shown in Figure 3, in the present embodiment, heating unit comprises top firing body 41, side heat body 42, copper electrode 46, Graphite Electrodes 45, retaining clip 43, thermal baffle 44; Wherein, three retaining clips 43 place, sideline that is seated in thermal baffle 44 lower surfaces triangular in shape, retaining clip 43 bottoms are fixed wtih four sections side heat bodies 42, and every section side heat 42 bodies are " W " type, and four sections side heat bodies 42 join end to end and form the rectangle that matches with quartz crucible of hollow; It is parallel with thermal baffle 44 that top firing body 41 also is " W " type bending and is positioned at thermal baffle 44 times, and top firing body 41 directly is connected with the Graphite Electrodes 45 that passes thermal baffle 44; Copper electrode 46 bottoms are passed top thermal insulation layer 39 and are connected with retaining clip 43 with Graphite Electrodes 45 on thermal baffle 44, and copper electrode 46 tops are connected with supply lead by the hole of cover top portion.Vacuum extractor and shell adopt flange to connect 13 and connect.
Want to obtain to have the polycrystal silicon ingot of unidirectional solidification tissue, just must guarantee by pilot circuit, the well heater of top firing body 41 and side heat body 42 to be controlled, obtain the thermograde of processing requirement, when making the polysilicon of quartz crucible bottom begin to solidify, the polysilicon at quartz crucible middle part and top still is in molten state, in order to implement effective unidirectional solidification.
be arranged in the radiant heat energy that top firing body 41 around quartz crucible and side heat body 42 provide the silicon raw materials melt, release for radiation-inhibiting heat energy, around quartz crucible, heat-insulation cage 31 disposed inboard external thermal insulation 38 and inner thermal insulating layer 32, in heat-insulation cage 31 bottoms, top arranged bottom thermal insulation layer 36 and top thermal insulation layer 39, thereby guarantee the melting in is sealed and do not have the lost environment of radiant heat energy of silicon raw material, the heat that top firing body 41 and side heat body 42 provide is all for the molten silicon raw material, after installing in the enclosure by the thermal-field device of this requirement assembling, remove the interior air of thermal-field device to reach the high vacuum environment of manufacture process requirement, energising starts top firing body 41 and side heat body 42, control by the first temperature of processing requirement, power is controlled again, with more than 1,400 degree centigrade of silicon heating raw materials to, make it to melt fully, owing to carrying out under the thermal environment of sealing, approximately just the silicon raw material of hundreds of kilograms can be melted in more than 10 hour, continue insulation for some time according to processing requirement, allow the impurity that waits in the silicon raw material fully melt, volatilization or vaporization, then change master mode, progressively slowly mention heat-insulation cage 31, insulation effect due to heat-insulation cage 31, heat-insulation cage 31 is inner has a temperature difference with heat-insulation cage 31 outsides, bottom thermal insulation layer 36 produces the gap with heat exchange platform bottom thermal insulation layer 37 disengagings, from then on a large amount of radiant heat energies can distribute in the gap through heat exchange platform 35, at this moment, heat exchange must occur with quartz crucible in heat exchange platform 35, thereby make the silicon liquid generation crystalline polamer of the bottom of quartz crucible, heat exchange platform sidepiece heat preservation strip 34 is divided into up and down two portions with the thermal field cavity simultaneously, top and inner thermal insulating layer 32 remain the environment of a sealing, thereby form a high-temperature zone, can keep the temperature that technique needs, and the bottom is due to thermolysis, form a cold zone, like this in whole thermal field cavity, crystal plane at silicon liquid forms the thermograde that a Vertical Uniform distributes, dispel the heat by control, heating is effectively controlled the crystallization and freezing of silicon liquid, thereby produce the polycrystalline silicon ingot casting that meets service requirements.
Claims (4)
1. a New Polycrystalline stove heating unit, is characterized in that, comprising: shell, thermal-field device, heating unit, vacuum extractor, holder suspension supporting device; Wherein, shell comprises upper cavity and lower chamber; Holder suspension supporting device comprises lifting rod, hanger and support bar; Support bar vertically is fixed in outer casing bottom, and lifting rod is vertically connected at enclosure, and the lifting rod top is connected with the lifting gear of cover top portion, and the lifting rod bottom is connected with the hanger that is arranged on the thermal-field device end face; The rectangular parallelepiped cavity of thermal-field device for opening from bottom surface, thermal-field device is by being connected with lifting rod at its top and the bottom is connected with support bar and fixes suspention in the enclosure, heating unit is positioned at thermal-field device and covers on quartz crucible, and vacuum means is outer and connected by hole corresponding on pipeline and shell setting in shell.
2. New Polycrystalline stove heating unit as claimed in claim 1, it is characterized in that: thermal-field device comprises: heat-insulation cage, external thermal insulation, inner thermal insulating layer, crucible bottom plate, heat exchange platform sidepiece heat preservation strip, heat exchange platform, bottom thermal insulation layer, heat exchange platform bottom thermal insulation layer, top thermal insulation layer; Wherein, heat-insulation cage is the rectangular parallelepiped cavity, its top and bottom opening; Be provided with one deck near the external thermal insulation of heat-insulation cage at the heat-insulation cage inwall, be provided with again inner thermal insulating layer in the inside near external thermal insulation; Be provided with the top thermal insulation layer at the heat-insulation cage top open part, be provided with the bottom thermal insulation layer of a circle square type band shape at heat-insulation cage bottom end opening place; Be fixed with heat exchange platform bottom thermal insulation layer in support bar middle part level, its size will adapt with bottom thermal insulation layer inner ring; Be provided with successively from top to bottom crucible bottom plate, heat exchange platform sidepiece heat preservation strip, heat exchange platform at supporting bar top.
3. New Polycrystalline stove heating unit as claimed in claim 2, it is characterized in that: heating unit comprises top firing body, side heat body, copper electrode, Graphite Electrodes, retaining clip, thermal baffle; Wherein, three retaining clips place, sideline that is seated in the thermal baffle lower surface triangular in shape, the retaining clip bottom is fixed wtih four sections side heat bodies, and every section side heat body is " W " type, and four sections side heat bodies join end to end and form the rectangle that matches with quartz crucible of hollow; The top firing body also is " W " type bending and is positioned under thermal baffle parallelly with thermal baffle, and the top firing body directly is connected with the Graphite Electrodes that passes thermal baffle; The copper electrode bottom is passed the top thermal insulation layer and is connected with retaining clip with Graphite Electrodes on thermal baffle, and the copper electrode top is connected with supply lead by the hole of cover top portion.
4. New Polycrystalline stove heating unit as claimed in claim 1 is characterized in that: vacuum extractor adopts flange to be connected with shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205485236U CN202989330U (en) | 2012-10-25 | 2012-10-25 | Novel polycrystalline furnace heating device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205485236U CN202989330U (en) | 2012-10-25 | 2012-10-25 | Novel polycrystalline furnace heating device |
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| CN202989330U true CN202989330U (en) | 2013-06-12 |
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| CN2012205485236U Expired - Lifetime CN202989330U (en) | 2012-10-25 | 2012-10-25 | Novel polycrystalline furnace heating device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11053152B2 (en) | 2015-12-18 | 2021-07-06 | Heraeus Quarzglas Gmbh & Co. Kg | Spray granulation of silicon dioxide in the preparation of quartz glass |
| US11236002B2 (en) | 2015-12-18 | 2022-02-01 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of an opaque quartz glass body |
| US11299417B2 (en) | 2015-12-18 | 2022-04-12 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a melting crucible of refractory metal |
| US11339076B2 (en) | 2015-12-18 | 2022-05-24 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass |
| US11492285B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies from silicon dioxide granulate |
| US11492282B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies with dew point monitoring in the melting oven |
| US11708290B2 (en) | 2015-12-18 | 2023-07-25 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a multi-chamber oven |
| US11952303B2 (en) | 2015-12-18 | 2024-04-09 | Heraeus Quarzglas Gmbh & Co. Kg | Increase in silicon content in the preparation of quartz glass |
-
2012
- 2012-10-25 CN CN2012205485236U patent/CN202989330U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11053152B2 (en) | 2015-12-18 | 2021-07-06 | Heraeus Quarzglas Gmbh & Co. Kg | Spray granulation of silicon dioxide in the preparation of quartz glass |
| US11236002B2 (en) | 2015-12-18 | 2022-02-01 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of an opaque quartz glass body |
| US11299417B2 (en) | 2015-12-18 | 2022-04-12 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a melting crucible of refractory metal |
| US11339076B2 (en) | 2015-12-18 | 2022-05-24 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass |
| US11492285B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies from silicon dioxide granulate |
| US11492282B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies with dew point monitoring in the melting oven |
| US11708290B2 (en) | 2015-12-18 | 2023-07-25 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a multi-chamber oven |
| US11952303B2 (en) | 2015-12-18 | 2024-04-09 | Heraeus Quarzglas Gmbh & Co. Kg | Increase in silicon content in the preparation of quartz glass |
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Granted publication date: 20130612 |
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