CN204111924U - A kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure - Google Patents
A kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure Download PDFInfo
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- CN204111924U CN204111924U CN201420515829.0U CN201420515829U CN204111924U CN 204111924 U CN204111924 U CN 204111924U CN 201420515829 U CN201420515829 U CN 201420515829U CN 204111924 U CN204111924 U CN 204111924U
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Abstract
The utility model is a kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure, comprise by upper warming plate, the heat-insulation cage that lower warming plate and side warming plate surround, upper warming plate is provided with the inlet pipe extend in heat-insulation cage, in heat-insulation cage, bottom is provided with oriented solidified blocks, the bottom of oriented solidified blocks is provided with the graphite pillar stiffener that some support oriented solidified blocks, oriented solidified blocks is provided with plumbago crucible, quartz crucible is provided with in plumbago crucible, graphite heater is provided with around plumbago crucible, be provided with between the bottom surrounding and side warming plate of plumbago crucible and be incubated fixing thermal insulative board with side.The utility model passes through thermal field internal structure, and profile and size redesign and layout, can cast large size silicon ingot, improve production production capacity greatly; Use special heating unit and diffuser and casting large size silicon ingot technique to match simultaneously, control the brilliant solid-liquid interface of desirable length, effective impurities removal, reduce lattice defect, effectively improve large size silicon ingot crystal mass.
Description
Technical field
The utility model relates to a kind of production of polysilicon equipment, particularly relates to a kind of photovoltaic industry directional solidification method production large size polycrystal silicon ingot ingot furnace thermal field structure.
Background technology
Current photovoltaic industry development rapidly, and market competition encourages, improve Ingot quality and become the most important thing with reduction production cost, large size polycrystal silicon ingot becomes current development trend, and constantly promoting polycrystal silicon ingot weight and saving energy and reduce the cost is the important channel that next step reduces costs.
The producible silicon ingot of thermal field of existing polycrystalline silicon ingot or purifying furnace mainly contains: weight is the silicon ingot of 450kg, can the silicon ingot of evolution 25 pieces of silico briquettes, i.e. G5 silicon ingot; By the silicon ingot of longitudinal growth.Above ingot casting weight is little, and volume recovery is low, and unit energy consumption is high, and cost is high.
Polycrystalline silicon ingot or purifying furnace is the equipment for the manufacture of polycrystal silicon ingot, it be by after the melting of silicon material by directional freeze condensation-crystallization, it is made to form the consistent silicon ingot of crystalline phase, thus reach the requirement of manufacture of solar cells to silicon chip quality, wherein long brilliant interface shape is the one of the main reasons affecting large size polycrystal silicon ingot crystal mass, long crystal boundary face that is smooth or dimpling can obtain effective column crystal, reduces crystal boundary, reduces the dislocation in crystal and impurity.
First the seed crystal chosen is taped against crucible bottom in polycrystalline cast ingot process, then polycrystalline silicon raw material is put into bottom quartz crucible, then heat, melt, grow the directional solidification method production polycrystal silicon ingots such as crystalline substance, annealing, cooling.Conventional polysilicon ingot casting thermal field, temperature distribution is not suitable for, and increased quality is not obvious.
Existing polycrystalline ingot furnace is provided with top, bottom heater, particularly G5 polycrystalline ingot furnace, charge amount is less, and its thermal field structure is unfavorable for the growth of large size silicon ingot, and also convex-concave is obvious for the solid-liquid interface of long brilliant process, be unfavorable for the impurities removal in long brilliant process, have larger impact to the total quality of crystal.
Summary of the invention
Technical problem to be solved in the utility model is for the deficiencies in the prior art, provides a kind of reasonable in design, the large size silicon ingot polycrystalline ingot furnace Novel hot field structure matched with casting large size silicon ingot technique.
Technical problem to be solved in the utility model is realized by following technical scheme, the utility model is a kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure, be characterized in: comprise by upper warming plate, the heat-insulation cage that lower warming plate and side warming plate surround, upper warming plate is provided with the inlet pipe extend in heat-insulation cage, in heat-insulation cage, bottom is provided with oriented solidified blocks, the bottom of oriented solidified blocks is provided with the graphite pillar stiffener that some support oriented solidified blocks, oriented solidified blocks is provided with plumbago crucible, quartz crucible is provided with in plumbago crucible, graphite heater is provided with around plumbago crucible, be provided with between the bottom surrounding and side warming plate of plumbago crucible and be incubated fixing thermal insulative board with side.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, and described large size silicon ingot polycrystalline ingot furnace Novel hot field structure, is characterized in: described graphite heater is flake graphite well heater.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described large size silicon ingot polycrystalline ingot furnace Novel hot field structure, be characterized in: described graphite heater comprises the some upper graphite heaters be located at above plumbago crucible, the some side graphite heaters being located at plumbago crucible surrounding and the some lower graphite heaters be located at below plumbago crucible; Upper graphite heater is 10-100mm apart from the distance of upper warming plate lower surface, and lower graphite heater is 10-100mm apart from the distance of oriented solidified blocks, side graphite heater apart from side warming plate distance be 20-250mm, apart from the distance of upper graphite heater be 50-250mm.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described large size silicon ingot polycrystalline ingot furnace Novel hot field structure, be characterized in: described upper graphite heater and side graphite heater are all contained on upper warming plate by cantilever crane, described lower graphite heater is contained on the warming plate of side by cantilever crane.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described large size silicon ingot polycrystalline ingot furnace Novel hot field structure, be characterized in: described upper graphite heater is provided with 8-12 sheet, on every sheet, the length of graphite heater is 1100-1360mm, width is 20-200mm, and thickness is 5-20mm.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described large size silicon ingot polycrystalline ingot furnace Novel hot field structure, be characterized in: described lower graphite heater is provided with 6-8 sheet, under every sheet, the length of graphite heater is 1100-1360mm, width is 20-200mm, and thickness is 5-20mm.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, described large size silicon ingot polycrystalline ingot furnace Novel hot field structure, be characterized in: be provided with 1-5 sheet side graphite heater in the side of plumbago crucible, the length of every sheet is 1100-1360mm, width is 20-200mm, and thickness is 5-20mm.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, and described large size silicon ingot polycrystalline ingot furnace Novel hot field structure, is characterized in: described side graphite heater is rectangle, U-shaped, S shape or snakelike.
Technical problem to be solved in the utility model can also be realized further by following technical scheme, and described large size silicon ingot polycrystalline ingot furnace Novel hot field structure, is characterized in: plumbago crucible is made up of graphite side and graphite base plate.
The size of heat-insulation cage of the present utility model can be done very large, expand thermal field interior dimensions, add sidepiece flake heater simultaneously, top of the prior art, bottom heater are modified into sheet structure by cylindrical, realize becoming top from the one-sided dispersion air inlet of original surrounding simultaneously and concentrate air inlet, this kind of thermal field can control the brilliant solid-liquid interface of ideal length, is conducive to impurities removal.
Compared with prior art, the utility model passes through thermal field internal structure, and profile and size redesign and layout, can cast large size silicon ingot, improve production production capacity greatly; Use special heating unit and diffuser and casting large size silicon ingot technique to match simultaneously, control the brilliant solid-liquid interface of desirable length, effective impurities removal, reduce lattice defect, effectively improve large size silicon ingot crystal mass.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present utility model.
Embodiment
With reference to accompanying drawing 1, a kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure, comprise the heat-insulation cage surrounded by upper warming plate 1, lower warming plate 11 and side warming plate 12, heat-insulation cage size designs according to crucible size.Can coarse scale structures be made, so just can expand thermal field size, large-scale crucible charge can be used, make it increase polycrystalline silicon material weight.Side warming plate 12 inner wall size of large size heat-insulation cage is 1340mm.
Upper warming plate 1 is provided with the inlet pipe 10 extend in heat-insulation cage, and upper air mode can improve furnace gas circulation, is conducive to impurities removal, improves crystal mass.
In heat-insulation cage, bottom is provided with oriented solidified blocks 7, and oriented solidified blocks 7, for support crucible, is used for heat exchange, can solidifies use by auxiliary heat conduction during crystallization simultaneously.The bottom of oriented solidified blocks 7 is provided with the graphite pillar stiffener 8 that some support oriented solidified blocks 7, and graphite pillar stiffener 8 fixes with the bottom of body of heater through lower warming plate 11.Oriented solidified blocks 7 is provided with plumbago crucible 6, plumbago crucible 6 is made up of graphite side and graphite base plate, quartz crucible 5 is provided with in plumbago crucible 6, flake graphite well heater is provided with around plumbago crucible 6, be provided with between the bottom surrounding and side warming plate 12 of plumbago crucible 6 and be incubated fixing thermal insulative board 9 with side, separate upper and lower warm area.
Described graphite heater comprises the 8 upper graphite heaters 2 be located at above plumbago crucible 6, the 4 side graphite heaters 3 being located at plumbago crucible 6 surrounding respectively and the 6 lower graphite heaters 4 be located at below plumbago crucible 6; Upper graphite heater 2 is 50mm apart from the distance of upper warming plate 1 lower surface, and on every sheet, the length of graphite heater 2 is 1200mm, and width is 40mm, and thickness is 12mm.Lower graphite heater 4 is 50mm apart from the distance of oriented solidified blocks 7, and under every sheet, the length of graphite heater 4 is 1200mm, and width is 40mm, and thickness is 12mm.Use graphite heater 2 and lower graphite heater 4 that heated perimeter can be made to cover wide, temperature is more even.
Every sheet side graphite heater 3 is rectangle, and length is 1200mm, and width is 120mm, and thickness is 12mm.Its apart from side warming plate 12 apart from for 60mm, apart from the distance of upper graphite heater 2 be 180mm.Use side graphite heater 3, can improve crucible ambient temperature during crystal melting, improve solid-liquid interface, be level or dimpling from concave change, is conducive to impurity impurities removal, improves crystal mass.
Upper graphite heater 2 and side graphite heater 3 total power are 110KW, and allocation proportion is 1 ~ 6:1.
Described upper graphite heater 2 and side graphite heater 3 are all contained on upper warming plate 1 by cantilever crane, and described lower graphite heater 4 is contained on side warming plate 12 by cantilever crane.Graphite heater is isostatic pressing formed graphite, and cantilever and the holding bolt of fixing graphite heater are C/C or graphite.When needs put quartz crucible 5 and plumbago crucible 6, upper warming plate 1 along with bell mention together time, upper graphite heater 2 and side graphite heater 3 are also mentioned together with upper warming plate 1, can place quartz crucible 5 and plumbago crucible 6.
Claims (9)
1. a large size silicon ingot polycrystalline ingot furnace Novel hot field structure, it is characterized in that: comprise by upper warming plate, the heat-insulation cage that lower warming plate and side warming plate surround, upper warming plate is provided with the inlet pipe extend in heat-insulation cage, in heat-insulation cage, bottom is provided with oriented solidified blocks, the bottom of oriented solidified blocks is provided with the graphite pillar stiffener that some support oriented solidified blocks, oriented solidified blocks is provided with plumbago crucible, quartz crucible is provided with in plumbago crucible, graphite heater is provided with around plumbago crucible, be provided with between the bottom surrounding and side warming plate of plumbago crucible and be incubated fixing thermal insulative board with side.
2. large size silicon ingot polycrystalline ingot furnace Novel hot field structure according to claim 1, is characterized in that: described graphite heater is flake graphite well heater.
3. large size silicon ingot polycrystalline ingot furnace Novel hot field structure according to claim 1 and 2, it is characterized in that: described graphite heater comprises the some upper graphite heaters be located at above plumbago crucible, the some side graphite heaters being located at plumbago crucible surrounding and the some lower graphite heaters be located at below plumbago crucible; Upper graphite heater is 10-100mm apart from the distance of upper warming plate lower surface, and lower graphite heater is 10-100mm apart from the distance of oriented solidified blocks, side graphite heater apart from side warming plate distance be 20-250mm, apart from the distance of upper graphite heater be 50-250mm.
4. large size silicon ingot polycrystalline ingot furnace Novel hot field structure according to claim 3, it is characterized in that: described upper graphite heater and side graphite heater are all contained on upper warming plate by cantilever crane, described lower graphite heater is contained on the warming plate of side by cantilever crane.
5. large size silicon ingot polycrystalline ingot furnace Novel hot field structure according to claim 3, it is characterized in that: described upper graphite heater is provided with 8-12 sheet, on every sheet, the length of graphite heater is 1100-1360mm, and width is 20-200mm, and thickness is 5-20mm.
6. large size silicon ingot polycrystalline ingot furnace Novel hot field structure according to claim 3, it is characterized in that: described lower graphite heater is provided with 6-8 sheet, under every sheet, the length of graphite heater is 1100-1360mm, and width is 20-200mm, and thickness is 5-20mm.
7. large size silicon ingot polycrystalline ingot furnace Novel hot field structure according to claim 3, it is characterized in that: be provided with 1-5 sheet side graphite heater in the side of plumbago crucible, the length of every sheet is 1100-1360mm, and width is 20-200mm, and thickness is 5-20mm.
8. large size silicon ingot polycrystalline ingot furnace Novel hot field structure according to claim 3, is characterized in that: described side graphite heater is rectangle, U-shaped, S shape or snakelike.
9. large size silicon ingot polycrystalline ingot furnace Novel hot field structure according to claim 1, is characterized in that: plumbago crucible is made up of graphite side and graphite base plate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420515829.0U CN204111924U (en) | 2014-09-10 | 2014-09-10 | A kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure |
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| CN201420515829.0U CN204111924U (en) | 2014-09-10 | 2014-09-10 | A kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195634A (en) * | 2014-09-10 | 2014-12-10 | 韩华新能源科技有限公司 | Novel thermal field structure of large-size silicon ingot polycrystal ingot furnace |
| CN106637394A (en) * | 2016-09-23 | 2017-05-10 | 江苏美科硅能源有限公司 | Device for achieving material floating through increasing bottom temperature of polycrystalline furnace |
-
2014
- 2014-09-10 CN CN201420515829.0U patent/CN204111924U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195634A (en) * | 2014-09-10 | 2014-12-10 | 韩华新能源科技有限公司 | Novel thermal field structure of large-size silicon ingot polycrystal ingot furnace |
| CN104195634B (en) * | 2014-09-10 | 2016-08-17 | 韩华新能源科技有限公司 | Large scale silicon ingot polycrystalline ingot furnace thermal field structure |
| CN106637394A (en) * | 2016-09-23 | 2017-05-10 | 江苏美科硅能源有限公司 | Device for achieving material floating through increasing bottom temperature of polycrystalline furnace |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 Termination date: 20170910 |