CN204080180U - A kind of thermal field structure casting solar level efficient polycrystalline silicon ingot - Google Patents
A kind of thermal field structure casting solar level efficient polycrystalline silicon ingot Download PDFInfo
- Publication number
- CN204080180U CN204080180U CN201420508457.9U CN201420508457U CN204080180U CN 204080180 U CN204080180 U CN 204080180U CN 201420508457 U CN201420508457 U CN 201420508457U CN 204080180 U CN204080180 U CN 204080180U
- Authority
- CN
- China
- Prior art keywords
- heat exchange
- exchange platform
- silicon ingot
- thermal field
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model discloses a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot, comprise heat-insulation cage assembly, heater block and heat exchange platform, the lower surface of described heat exchange platform is provided with some bolts, and described bolt length successively decreases from heat exchange Platform center successively to two ends.It is different with the distance of surrounding distance furnace wall and cause crucible bottom center different with surrounding heat loss speed that the utility model adopts bolt from heat exchange Platform center to surrounding that successively decrease successively from of length to solve centre due to heat exchange platform, crucible bottom non-uniform temperature, the problems such as the Transverse Temperature Gradient existed causes silicon ingot center forming core crystal grain poor, this effectively improves grain growing quality, thus improves conversion efficiency of solar cell.
Description
Technical field
The utility model belongs to field of photovoltaic technology, is specifically related to a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot.
Background technology
Crystalline silicon is as a kind of material that can utilize solar electrical energy generation, be widely used in the epoch that the renewable energy resources are in short supply, photovoltaic all adopts silicon single crystal in early days, but its production efficiency is lower, cost is higher, and polysilicon is with advantages such as its low cost, high production capacity, low decay, has higher cost performance and competitive edge, at present in photovoltaic field, polycrystalline silicon ingot casting technology has developed into a kind of mainstream technology.
Polycrystalline silicon ingot or purifying furnace adopts resistive heating, by the casting unit of raw materials melt recrystallize, produces solar-grade polysilicon ingot.In ingot casting is produced, through heating, fusing, long brilliant, annealing, the steps such as cooling, after polycrystal raw material melting, generate the polycrystal silicon ingot grown in certain direction, silicon raw materials melt and long brilliant process complete in ingot furnace thermal field, thermal field is by heat-insulation cage assembly, heater block, heat exchange platform, the compositions such as thermal component, the crucible that silicon material is housed is placed on heat exchange platform, ingot furnace thermal field provides heat for the melting of silicon material, again for crystal growth provides temperature gradient field, form directional freeze, and temperature gradient field is the key of the polycrystal silicon ingot of production high-quality accurately.
Casting polycrystalline silicon is because local temperature difference forms thermal stresses in crystal growth and process of cooling, and thermal stresses directly can affect lattice defect, the poly grains of fine uniform, can effectively reduce silicon ingot stress, reduces lattice defect and produces.The directional solidification polysilicon ingot furnace that current production efficient polycrystalline silicon the most often uses, its thermograde required when crystal growth to be had on the furnace wall of water coolant by heat radiation to interlayer by heat exchange platform to complete, because the centre of heat exchange platform is different with the distance of surrounding distance furnace wall, cause crucible bottom center different with surrounding heat loss speed, crucible bottom non-uniform temperature, there is Transverse Temperature Gradient, cause silicon ingot center forming core crystal grain poor, efficient ingot casting success ratio is lower, affect follow-up grain growing quality, thus affect battery conversion efficiency.
Therefore need a kind of new technical scheme, to solve the problem.
Utility model content
Utility model object: for above-mentioned prior art Problems existing and deficiency, the purpose of this utility model there is provided a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot, can effectively reduce crucible bottom Transverse Temperature Gradient.
Technical scheme: the utility model discloses a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot, comprise heat-insulation cage assembly, heater block and heat exchange platform, the lower surface of described heat exchange platform is provided with some bolts, and described bolt length successively decreases from heat exchange Platform center successively to two ends.It is different with the distance of surrounding distance furnace wall and cause crucible bottom center different with surrounding heat loss speed that the utility model adopts bolt from heat exchange Platform center to surrounding that successively decrease successively from of length to solve centre due to heat exchange platform, crucible bottom non-uniform temperature, the problems such as the Transverse Temperature Gradient existed causes silicon ingot center forming core crystal grain poor, this effectively improves grain growing quality, thus improves conversion efficiency of solar cell.
As further optimization of the present utility model, the diameter of bolt described in the utility model is M10-M14.
As further optimization of the present utility model, between bolt described in the utility model and bolt, spacing is 5-20mm.
As further optimization of the present utility model, bolt length described in the utility model is 20-200mm.
As further optimization of the present utility model, the material of bolt described in the utility model is graphite material.
As further optimization of the present utility model, heat exchange platform described in the utility model is flat hexahedron, and its material is graphite material.
Beneficial effect: the utility model compared with prior art, has the following advantages:
1, in the silicon material melt stage later stage, thermal field structure of the present utility model only need open less heat-insulation cage, just can keep larger vertical temperature gradient, the silicon material realized in crucible melts according to order from top to down, effectively can improve operability and the success ratio of ingot casting.
2, heat exchange platform of the present utility model is by middle enhance heat, effectively ensure that the homogeneity of crucible bottom, improves all even synchronism of crucible bottom surrounding and middle forming core.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
The utility model is illustrated further below in conjunction with drawings and Examples.
Thermal field structure of the present utility model comprises the bolt 4 of ordered arrangement under heat-insulation cage assembly 1, heater block 2, heat exchange platform 3 and heat exchange platform as shown in Figure 1, heat-insulation cage parts 1 of the present utility model are by top thermal baffle, a closed thermal field of sidepiece thermofin and bottom thermal insulation layer composition, promoted by sidepiece thermofin and open thermal field, carry out heat loss through radiation by heat exchange platform 3 simultaneously, thus reduce the temperature of crucible bottom, heat exchange platform 3 of the present utility model is the flat hexahedron be made up of graphite material, the lower surface of heat exchange platform 3 is provided with some screws, between screw and screw, spacing is 5-20mm, be M10-M14 with bolt 4 diameter that screw is supporting, length is 20-200mm, its material is graphite, this bolt 4 is according to four limit lag bolts, the rule of middle thru-bolt will be bolted on the screw of heat exchange platform lower surface successively.
The utility model by the enhance heat bolt 4 of heat exchange platform 3 and lower surface by heat radiation on furnace wall, by the water coolant in the interlayer of furnace wall, heat is taken away, by enhance heat, make in the middle of crucible bottom and the temperature of four corners comparatively even.
Embodiment 1:
The present embodiment take charging capacity as the silicon raw material casting G6 silicon ingot of 850Kg is example, adopt conventional foundry ingot stove thermal field structure and thermal field structure of the present utility model respectively, the mode of bottom spraying nucleating agent mixed solution is adopted to carry out efficient ingot casting continuously, contrast two kinds of thermal field structures cast the crystal quality of silicon ingot, grain morphology and ingot casting energy consumption, comparing result is as shown in table 1:
Table 1
In whole ingot casting process, two kinds of thermal field casting ingot process are basically identical for working time, use thermal field of the present utility model, melt stage later stage heat-insulation cage aperture is lower, energy-saving and cost-reducing, and silicon ingot bottom die more fine uniform, silicon ingot central zone crystal grain is substantially identical with corner areas grain size, and the utility model gained silicon ingot good article rate is higher.
Claims (6)
1. cast the thermal field structure of solar level efficient polycrystalline silicon ingot for one kind, comprise heat-insulation cage assembly (1), heater block (2) and heat exchange platform (3), it is characterized in that: the lower surface of described heat exchange platform (3) is provided with some bolts (4), and described bolt (4) length is successively decreased from heat exchange platform (3) center successively to surrounding.
2. a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot according to claim 1, is characterized in that: described bolt (4) diameter is M10-M14.
3. a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot according to claim 2, is characterized in that: between described bolt (4) and bolt (4), spacing is 5-20mm.
4. a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot according to claim 3, is characterized in that: described bolt (4) length is 20-200mm.
5. a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot according to claim 2, is characterized in that: the material of described bolt (4) is graphite material.
6. a kind of thermal field structure casting solar level efficient polycrystalline silicon ingot according to claim 1, is characterized in that: described heat exchange platform (3) is flat hexahedron, and its material is graphite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420508457.9U CN204080180U (en) | 2014-09-04 | 2014-09-04 | A kind of thermal field structure casting solar level efficient polycrystalline silicon ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420508457.9U CN204080180U (en) | 2014-09-04 | 2014-09-04 | A kind of thermal field structure casting solar level efficient polycrystalline silicon ingot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204080180U true CN204080180U (en) | 2015-01-07 |
Family
ID=52172916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420508457.9U Expired - Fee Related CN204080180U (en) | 2014-09-04 | 2014-09-04 | A kind of thermal field structure casting solar level efficient polycrystalline silicon ingot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204080180U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195633A (en) * | 2014-09-04 | 2014-12-10 | 泗阳瑞泰光伏材料有限公司 | Thermal field structure for casting solar-grade high-efficiency polycrystalline silicon ingot |
-
2014
- 2014-09-04 CN CN201420508457.9U patent/CN204080180U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195633A (en) * | 2014-09-04 | 2014-12-10 | 泗阳瑞泰光伏材料有限公司 | Thermal field structure for casting solar-grade high-efficiency polycrystalline silicon ingot |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103469293B (en) | A kind of preparation method of polysilicon | |
| CN204825129U (en) | Thermal field structure of high -efficient polycrystalline silicon ingot furnace | |
| CN102330148A (en) | Polysilicon ingot casting method with low defect and high output and thermal field structure thereof | |
| CN102877129B (en) | A kind of crystalline silicon and preparation method thereof | |
| CN102108544A (en) | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface | |
| CN204022995U (en) | A kind of novel ingot furnace thermal field structure | |
| CN104195634B (en) | Large scale silicon ingot polycrystalline ingot furnace thermal field structure | |
| CN204779921U (en) | Novel polycrystalline silicon side layering heating device | |
| CN102140673A (en) | Polycrystalline silicon ingot furnace heating device with separately controlled top and side | |
| CN103924293B (en) | A kind of bottom strengthens refrigerating unit and method of cooling thereof | |
| CN102899720B (en) | Ingot casting process for high-efficiency polycrystalline silicon | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN102925971B (en) | High-efficiency polycrystalline ingot casting thermal field | |
| CN103132142B (en) | Polycrystal silicon ingot and manufacture method thereof | |
| CN203393257U (en) | Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot | |
| CN202131390U (en) | Recirculated cooling water energy saving device for polycrystal ingot casting production | |
| CN103397379A (en) | High-efficiency polycrystalline silicon ingot casting furnace | |
| CN202390560U (en) | Large-capacity polysilicon ingot furnace thermal field structure | |
| CN204080180U (en) | A kind of thermal field structure casting solar level efficient polycrystalline silicon ingot | |
| CN203382848U (en) | High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate | |
| CN203065635U (en) | Bottom enhanced cooling device | |
| CN207376139U (en) | Orient the energy-saving and high efficient polycrystalline silicon ingot or purifying furnace of water-cooling | |
| CN106048718A (en) | Polycrystalline silicon semi-casting ingot impurity removing method | |
| CN203174222U (en) | Thermal field structure of polycrystalline silicon ingot casting furnace | |
| CN106119956B (en) | A kind of polysilicon fritting casting ingot method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 Termination date: 20180904 |