CN102140673A - Polycrystalline silicon ingot furnace heating device with separately controlled top and side - Google Patents
Polycrystalline silicon ingot furnace heating device with separately controlled top and side Download PDFInfo
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- CN102140673A CN102140673A CN2011100707432A CN201110070743A CN102140673A CN 102140673 A CN102140673 A CN 102140673A CN 2011100707432 A CN2011100707432 A CN 2011100707432A CN 201110070743 A CN201110070743 A CN 201110070743A CN 102140673 A CN102140673 A CN 102140673A
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Abstract
The invention relates to the technical field of polycrystalline silicon ingot furnace manufacture, and aims to provide a polycrystalline silicon ingot furnace heating device with separately controlled top and side. The device comprises a furnace chamber in which a heat insulating cage is arranged; the upper part and lower part of the heat insulating cage are respectively provided with a top insulation board and a lower insulation board; a crucible coated with a crucible protection board is positioned in the heat insulating cage; and the heating device is provided with two heaters, namely one heater is a top heater positioned above the crucible, and the other heater is a side heater enclosing the crucible protection board. The device can control the temperature in a thermal field in the crystal growing process, and a proportion of the heating power of the top and the side is optimized according to a requirement, so that the crystallization and solidification of silicon can be effectively controlled, and the crystal growth efficiency is improved, energy consumption is reduced and the quality of silicon ingots is improved further. The device is reasonable in design, and can effectively improve crystal orientation of polycrystalline, reduce energy consumption, enlarge crystal particles and reduce crystal boundaries so as to improve the quality of the silicon ingots.
Description
Technical field
The present invention relates to the manufacturing technology field of polycrystalline silicon ingot or purifying furnace, particularly a kind of top side is the polycrystalline silicon ingot or purifying furnace heating unit of control separately, is applicable to make the high-quality polycrystal silicon ingot of large size.
Background technology
Sun power is human inexhaustible renewable and clean energy resource, in effective utilization of sun power, and main, the most great-hearted beyond doubt research field of solar energy power generating, and develop and developed solar cell thus.Solar cell mainly is raw material with silicon, and silicon is the common a kind of chemical element of nature, and purified silicon fusing point is 1414 ℃, is used for solar-grade polysilicon purity generally more than 99.99%.
Polycrystalline silicon ingot or purifying furnace is a kind of silicon remelting device of specialty, is used to produce qualified solar-grade polysilicon ingot casting.Ingot casting production is earlier satisfactory polycrystalline silicon raw material to be packed in the stove, then according to technique initialization heat, melt, each steps such as long crystalline substance, annealing, cooling, the process of polycrystal silicon ingot taking-up the most at last.In the production process of polycrystalline silicon ingot or purifying furnace, can control thermograde in the polycrystalline silicon ingot or purifying furnace effectively, the polycrystal silicon ingot quality that decision is produced.
There is a large amount of crystal boundaries in casting polycrystalline silicon inside, and clean crystal boundary is non-electroactive, to the minority carrier lifetime did not influence or have only minor impact, and the poly-partially or precipitation of impurity can change the electroactive of crystal boundary, can significantly reduce minority carrier lifetime, crystal boundary is many more, influences big more; But studies show that, if crystal boundary perpendicular to device surface, then crystal boundary is to almost not influence of material electrochemical performance.And the polycrystalline silicon ingot or purifying furnace of existing single supply structure is because the deficiency on the structure design is difficult to solve the out-of-level problem of crystal plane.This patent is promptly solving the horizontal problem of this crystal plane.
Summary of the invention
The technical problem to be solved in the present invention is to overcome deficiency of the prior art, the polycrystalline silicon ingot or purifying furnace heating unit that provides a kind of top side separately to control.
Be the technical solution problem, the invention provides the separately polycrystalline silicon ingot or purifying furnace heating unit of control of a kind of top side, comprise that inside is equipped with the furnace chamber of heat-insulation cage body, the heat-insulation cage body is provided with top warming plate and following thermal insulation layer up and down respectively, and the crucible of external application crucible backplate is arranged in the heat-insulation cage body; This heating unit has two well heaters: one of them is a top heater, is located at the top of crucible; Another is the sidepiece well heater, is located on around the crucible backplate.
Among the present invention, described top heater links to each other with the heater top transformer through the top heater electrode; The sidepiece well heater links to each other with side well heater transformer through the side heater electrode.
Among the present invention, described top heater is fixed on the top heater electrode, and the sidepiece well heater is fixed on the side heater electrode.
Among the present invention, heat-insulation cage body, top warming plate reach the thermal field chamber of a sealing of thermal insulation layer composition down.Top heater, sidepiece well heater are heated by transformer-supplied separately, and the output of transformer just can be controlled the heat that each well heater produces, and then improve the distribution of thermograde in the thermal field.
Beneficial effect of the present invention is:
Can be in long brilliant process to thermal field in temperature control, by the output rating of independent control top, side well heater, the ratio of properly distributed top side heater power can form a vertical thermograde in crystallisation process.And optimize the proportioning of top side heating power as required, thus the crystallization and freezing of silicon is controlled effectively, and then accelerate long brilliant efficient, and cut down the consumption of energy, improve the silicon ingot quality.
The present invention tests in actual applications, can not only produce high-quality polycrystal silicon ingot, also can shorten the whole process time, reduces the power consumption in the crystallisation process.
Of the present invention reasonable in design, can effectively improve the polysilicon crystal orientation, cut down the consumption of energy, increase crystal grain, reduce crystal boundary, thereby improve the polycrystal silicon ingot quality.
Description of drawings
Fig. 1 is an one-piece construction sectional view of the present invention.
Reference numeral among the figure is: 1 heater top transformer, 2 heater top electrodes, 3 top thermal insulation layers, 4 heater tops, 5 side well heaters, 6 heat-insulation cage bodies, 7 crucible backplates, 8 pillar stiffeners, 9 times thermal insulation layers, 10 side well heater transformers, 11 side heater electrodes, 12 bodies of heater, 13 crucibles, 14 radiating blocks.
The long brilliant speed comparison diagram of Fig. 2 single supply and dual power supply.
Fig. 3 crystal height changes comparison diagram with the crystal growth time.
Fig. 4 heater power is variation diagram in time.
The crystal growth interface shape of Fig. 5 single supply.
The crystal growth interface shape of Fig. 6 dual power supply.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
In the present embodiment, the top side separately polycrystalline silicon ingot or purifying furnace heating unit of control comprises furnace chamber 12, place the heat-insulation cage body 6 in the furnace chamber 12, hang on the top warming plate 3 on the electrode, be fixed in the top heater 4 on the top heater electrode 2, be connected in the heater top transformer 1 on the top heater electrode 2, be fixed in the sidepiece well heater 5 on the side heater electrode 11, be connected in the side well heater transformer 10 on the sidepiece heater electrode 11, be positioned at the crucible 13 and the crucible backplate 7 of thermal field well heater inside, place formations such as following thermal insulation layer 9 on the graphite pillar stiffener 8 and radiating block 14.
The invention will be further described below in conjunction with the production of polysilicon flow process:
During actual production, produce a large amount of heats after the top side well heater obtains powering,, after fusing is finished, enter the long crystalline substance stage the fusing of the polycrystalline silicon material in the crucible 13.Heat-insulation cage body 6 is slowly mentioned by certain speed, and after radiating block 7 came out, a large amount of heat can be radiated on the furnace chamber 12 by radiating block 7, so crucible 13 bottom temps descend, solution begins crystallization.In the long brilliant middle and later periods, because crystal increases, liquid reduces, and radiating block 7 dissipated heat effects weaken, and crucible wall place is near side well heater 5, and the relative crucible of temperature center is higher, and crystallization velocity is slower, thereby long crystal boundary face is " protruding " font.Finally, finish and thoroughly center earlier long crystalline substance, and brilliant operation is grown in the corner of carrying out a few hours subsequently again can make whole silicon ingot surfacing.
Adopt device of the present invention, can progressively reduce the power of side well heater 5, reduce the temperature of edge, make it close, and then make crystal plane be tending towards level, guarantee crystal mass with the center temperature in the long brilliant middle and later periods; Subsidiaryly simultaneously shortened the long brilliant time of corner, finally improved the crystal orientation, raised the efficiency and reduce power consumption.
Example:
In the present embodiment, single supply is meant and uses the single channel power supply to give the situation of heating installation power supply in the prior art; Dual power supply is meant the situation of using the two-way power supply to give two heating installation power supplies respectively among the present invention.
The polycrystalline ingot furnace device and the technology that adopt this patent to describe, charging 480kg adopts two kinds of patterns of single supply and dual power supply equipment heating to carry out crystal growth respectively, contrasts the influence of two kinds of technology to long brilliant speed, crystal mass and energy consumption.
As seen from Figure 2, in the most initial 2～6 hours of long brilliant process, the long brilliant speed of single supply equipment is higher than dual power supply, but after crystal growth begins 6 hours, crystalline growth velocity in the dual power supply equipment is higher than single supply all the time, and final dual power supply equipment is compared single supply equipment and finished crystal growth in about in advance 3 hours.
As shown in Figure 3, be in the long brilliant processes of two kinds of equipment crystal height with the variation contrast of crystal growth time.The starting stage of crystal growth, because crystalline growth velocity is lower slightly in the dual power supply equipment,, surpass single supply with the later stage crystalline growth velocity so crystal height is also lower slightly, crystal height obviously surpasses single supply in the dual power supply equipment, the final long brilliant process of having finished than morning.
Be heater power change curve in time as shown in Figure 4.In long brilliant preceding half period, the dual power supply plant capacity is a little more than single supply equipment, but enters the second half section, and dual power supply power descends rapidly, and heating power is lower than the long brilliant process of single supply significantly.
By computer simulation, analyzed the crystal growth interface shape of using the long brilliant process of list/dual power supply.As Fig. 5, in the long brilliant later stage of single supply, the side well heater can not cut out, and causes the input of crystal on side face heat more, and slow near the crystal growth of sidewall, a growth interface obviously center is outstanding.In Fig. 6, owing to adopted double-heater, long brilliant later stage side well heater cuts out, only surplus top heater heating, and intracrystalline heat is transmission vertically mainly, and growth interface is more smooth.
By to carrying out section processing by the polycrystalline ingot casting that grows in single supply and the dual power supply equipment, can clearly find out, the growth vertically that the crystal grain of the polycrystalline ingot casting that grows in the dual power supply equipment is more regular helps improving final crystal yield and transformation efficiency.
By above contrast, can sum up the advantage of dual power supply polycrystalline casting unit with respect to the single supply casting unit:
(1) crystalline growth velocity improves, and shortens the long brilliant time;
(2) the heater power total power reduces, and because its crystal growth time shortens, energy consumption significantly reduces;
(3) dual power supply makes crystal growth interface more smooth, and the crystal grain verticality is better and help it and grow up, and crystal mass improves.
Claims (3)
1. the top side polycrystalline silicon ingot or purifying furnace heating unit of control separately comprises that inside is equipped with the furnace chamber of heat-insulation cage body, and the heat-insulation cage body is provided with top warming plate and following thermal insulation layer up and down respectively, and the crucible of external application crucible backplate is arranged in the heat-insulation cage body; It is characterized in that this heating unit has two well heaters: one of them is a top heater, is located at the top of crucible; Another is the sidepiece well heater, is located on around the crucible backplate.
2. polycrystalline silicon ingot or purifying furnace heating unit according to claim 1 is characterized in that, described top heater links to each other with the heater top transformer through the top heater electrode; The sidepiece well heater links to each other with side well heater transformer through the side heater electrode.
3. polycrystalline silicon ingot or purifying furnace heating unit according to claim 1 and 2 is characterized in that, described top heater is fixed on the top heater electrode, and the sidepiece well heater is fixed on the side heater electrode.
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| CN2011100707432A CN102140673A (en) | 2011-03-23 | 2011-03-23 | Polycrystalline silicon ingot furnace heating device with separately controlled top and side |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103255472A (en) * | 2013-04-25 | 2013-08-21 | 浙江晶盛机电股份有限公司 | Zone melting furnace thermal field with double power supplies for heating and heat preservation method |
| CN103334154A (en) * | 2013-05-29 | 2013-10-02 | 浙江晟辉科技有限公司 | Preparation method of polycrystalline silicon ingots based on thermal exchange technology |
| CN103374758A (en) * | 2012-04-25 | 2013-10-30 | 志圣科技（广州）有限公司 | Heating system for crystal growth |
| CN103668450A (en) * | 2013-12-02 | 2014-03-26 | 青岛隆盛晶硅科技有限公司 | Ingot casting technology capable of reducing generation of fine grains in polycrystalline silicon ingot |
| CN103696002A (en) * | 2013-12-16 | 2014-04-02 | 英利集团有限公司 | Electromagnetic and resistance mixed heating thermal field structure of ingot furnace and using method of electromagnetic and resistance mixed heating thermal field structure |
| CN103741212A (en) * | 2013-12-19 | 2014-04-23 | 镇江环太硅科技有限公司 | Crystal growth furnace and control method for thermal field of crystal growth furnace |
| CN104018221A (en) * | 2014-05-08 | 2014-09-03 | 浙江晟辉科技有限公司 | Method for producing polycrystalline silicon ingot by applying heat exchange |
| CN104775152A (en) * | 2015-03-16 | 2015-07-15 | 内蒙古京晶光电科技有限公司 | Automatic growth control method of sapphire (80-150 kg) monocrystalline |
| CN106676627A (en) * | 2016-12-09 | 2017-05-17 | 浙江绿谷光伏科技有限公司 | Shaft furnace used for cast polycrystalline silicon |
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
| CN110230094A (en) * | 2019-07-17 | 2019-09-13 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace heater |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103374758B (en) * | 2012-04-25 | 2016-03-02 | 志圣科技（广州）有限公司 | Crystal growth heating system |
| CN103374758A (en) * | 2012-04-25 | 2013-10-30 | 志圣科技（广州）有限公司 | Heating system for crystal growth |
| CN103255472A (en) * | 2013-04-25 | 2013-08-21 | 浙江晶盛机电股份有限公司 | Zone melting furnace thermal field with double power supplies for heating and heat preservation method |
| US9797062B2 (en) | 2013-04-25 | 2017-10-24 | Zhejiang Jingsheng M & E Co., Ltd | Zone melting furnace thermal field with dual power heating function and heat preservation method |
| CN103334154A (en) * | 2013-05-29 | 2013-10-02 | 浙江晟辉科技有限公司 | Preparation method of polycrystalline silicon ingots based on thermal exchange technology |
| CN103668450A (en) * | 2013-12-02 | 2014-03-26 | 青岛隆盛晶硅科技有限公司 | Ingot casting technology capable of reducing generation of fine grains in polycrystalline silicon ingot |
| CN103668450B (en) * | 2013-12-02 | 2016-04-13 | 青岛隆盛晶硅科技有限公司 | The thin brilliant casting ingot process produced in polycrystalline silicon ingot casting can be reduced |
| CN103696002A (en) * | 2013-12-16 | 2014-04-02 | 英利集团有限公司 | Electromagnetic and resistance mixed heating thermal field structure of ingot furnace and using method of electromagnetic and resistance mixed heating thermal field structure |
| CN103696002B (en) * | 2013-12-16 | 2016-06-15 | 英利集团有限公司 | The ingot furnace thermal field structure of electromagnetism and resistance Hybrid Heating and using method |
| CN103741212A (en) * | 2013-12-19 | 2014-04-23 | 镇江环太硅科技有限公司 | Crystal growth furnace and control method for thermal field of crystal growth furnace |
| CN104018221A (en) * | 2014-05-08 | 2014-09-03 | 浙江晟辉科技有限公司 | Method for producing polycrystalline silicon ingot by applying heat exchange |
| CN104775152A (en) * | 2015-03-16 | 2015-07-15 | 内蒙古京晶光电科技有限公司 | Automatic growth control method of sapphire (80-150 kg) monocrystalline |
| CN104775152B (en) * | 2015-03-16 | 2017-06-30 | 内蒙古京晶光电科技有限公司 | A kind of automatic growth control method of 80 150kg jewel monocrystalline |
| CN106676627A (en) * | 2016-12-09 | 2017-05-17 | 浙江绿谷光伏科技有限公司 | Shaft furnace used for cast polycrystalline silicon |
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
| CN110230094A (en) * | 2019-07-17 | 2019-09-13 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace heater |
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Application publication date: 20110803 |