CN203382848U - High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate - Google Patents
High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate Download PDFInfo
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- CN203382848U CN203382848U CN201320501722.6U CN201320501722U CN203382848U CN 203382848 U CN203382848 U CN 203382848U CN 201320501722 U CN201320501722 U CN 201320501722U CN 203382848 U CN203382848 U CN 203382848U
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Abstract
The utility model discloses a high-efficient polycrystalline silicon ingot casting furnace with a heat insulation protective plate. The high-efficient polycrystalline silicon ingot casting furnace comprises a furnace body, a heat insulation cage body arranged in the furnace body and a quartz crucible arranged in the heat insulation cage body, and is characterized in that a bottom plate is attached to the bottom surface of the quartz crucible, the protective plate is attached on the peripheral surface of the quartz crucible, and one end of the protective plate, which is close to the bottom plate, is connected with the bottom plate through a heat insulation material plate. The technical scheme provided by the utility model has the beneficial effects that, by changing the heat supply capabilities of upper and lower parts of side part heaters and the heat conduction capabilities of all the parts of the peripheral protective plate of the crucible, the bottom plate and a DS heat radiation block, the distribution of a temperature field in the ingot casting furnace can be effectively controlled, the phenomena of melting and bulging of the center of a crystal growth interface can be improved, a solid-liquid interface tends to be flat, the technical scheme is further favorable for discharge of impurities during the crystal growth process, and a high-efficient polycrystalline silicon ingot with low content of the impurities and relatively uniform grains can be further produced.
Description
Technical field
The utility model relates to the polycrystal silicon ingot ingot casting technology, specifically a kind ofly is heated evenly, the uniformly efficient polycrystal silicon ingot ingot furnace of molten silicon.
Background technology
As everyone knows, the energy is the lifeblood of national economy, is the matter of utmost importance that many countries formulate global strategy.Yet today,
Energy shortage and environmental problem have become the theme of global energy problem.How effective exploitation utilizes the renewable energy source of cleanliness without any pollution just to become the mankind's an extremely urgent thing.Sun power is it green energy resource without cease of inexhaustible use, in the utilization of sun power, opto-electronic conversion is most widely used, and photovoltaic cell is topmost a kind of product in the market, it usings polysilicon as base material, therefore the preparation of silicon crystal is the basis of photovoltaic cell.
Polycrystalline silicon ingot or purifying furnace is a kind of silicon raw material remelting recrystallize equipment, for the production of the solar-grade polysilicon ingot.In actual production, through heat fused, directional long crystal, annealing, the step such as cooling, polycrystalline silicon raw material is prepared into to the polycrystal silicon ingot of growth in a certain direction.Silicon raw material remelting recrystallization process is to carry out in the thermal field of polycrystalline silicon ingot or purifying furnace, and it is comprised of component such as heat-insulation cage assembly, graphite heater, DS radiating blocks.Thermal field not only provides required heat energy for unmelted polycrystalline silicon, in long brilliant process, provides again a temperature gradient field, thereby forms directional freeze.The production of high-quality polycrystal silicon ingot, can crucial just being accurately control the thermograde in thermal field, forms a desirable solid-liquid interface condition.
Yet there is larger defect in existing polysilicon ingot furnace thermal field design, is difficult to obtain rational temperature distribution, is difficult to make solid-liquid interface to reach perfect condition, thereby has affected the quality of polycrystal silicon ingot.
The technical scheme of prior art: the inner thermal field of existing polycrystalline silicon ingot or purifying furnace is comprised of component such as heat-insulation cage assembly, graphite heater, DS radiating blocks mostly, and in actual production process, in stove, temperature forms by these component actings in conjunction.At present, produce graphite heater integral width used identical with thickness, thereby each position has identical heat capacity; Crucible guard boards and base plate are the isostatic pressing formed graphite plate, and the capacity of heat transmission at each position is identical; And used DS radiating block is step-like, the top surrounding is all vacated a part, and during ingot casting, vacancy partly uses the heat-insulation and heat-preservation bar identical with step dimension to fill; By moving up and down the heat-insulation cage body, reach the purpose of opening and closing heat-insulation cage body again, and then warm field distribution in regulating stove, realize efficient polycrystalline cast ingot process.
The shortcoming of prior art: the inner thermal field design of existing polycrystalline silicon ingot or purifying furnace, because each position heat capacity of graphite heater is identical, crucible guard boards is identical with the capacity of heat transmission at each position of base plate, and the capacity of heat transmission of the DS radiating block contacted from base plate and heat preservation strip is different, heat preservation strip has the effect of heat-insulation and heat-preservation, the crucible surrounding all has with top the graphite heater heat supply that heat capacity is identical in addition, thereby cause the temperature of crucible surrounding higher than the crucible middle part, make the temperature gradient distribution inequality, as shown in Figure 6, cause fusing interface and long crystal boundary face center to raise up, and center epirelief phenomenon is more and more obvious to bottom from the crucible top, crystals impurity will segregation or precipitation, change the electroactive of crystal boundary, significantly reduce the life-span of minority carrier, affected greatly the quality of efficient polycrystal silicon ingot.
The utility model content
The purpose of this utility model is to provide a kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate, be intended to solve fusing and long brilliant stage solid-liquid interface center epirelief phenomenon in efficient polycrystal silicon ingot ingot casting process, make radial symmetry gradient trend towards zero, promote the quality of efficient polycrystal silicon ingot.
The purpose of this utility model is achieved through the following technical solutions:
A kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate, comprise body of heater, be arranged on the interior heat-insulation cage body of body of heater, be arranged on the quartz crucible in the heat-insulation cage body, it is characterized in that: the quartz crucible bottom surface is pasted with base plate, the quartz crucible peripheric surface is pasted with backplate, and backplate is connected with base plate by insulating panels near base plate one end.
Because each regional heat-sinking capability of original base plate is identical, therefore in the situation that each position heat capacity of well heater is identical, the quartz crucible surrounding all has with top the graphite heater heat supply that heat capacity is identical, thereby cause the temperature of crucible surrounding higher than quartz crucible middle part quartz crucible, make the temperature gradient distribution inequality.In order to address this problem, the utility model adopts backplate to be connected with base plate by insulating panels near base plate one end.Therefore the thermal conductivity of quartz crucible bottom is less, can reduce a part of heat in the silicon material fusion stage and pass to crucible, thereby dwindle crucible inner radial temperature head, reduces the burn-off rate of crucible surrounding silicon material, makes to melt interface and is tending towards smooth.
Base plate mainly consists of the plate body of 3 kinds of different thermal conductivitys, is respectively: plate body A, plate body B, plate body C, and the thermal conductivity of the thermal conductivity of the thermal conductivity of plate body A<plate body B<plate body C, plate body A is nested in plate body B, and plate body B is nested in plate body C.
The plate body central point of thermal conductivity minimum aligns with quartz crucible bottom center's point.
Also comprise and be arranged on the quartz crucible peripheric surface to the side heater between the heat-insulation cage tagma, base plate mainly consists of the plate body of at least 2 kinds of different thermal conductivitys, and the plate body that thermal conductivity is little is nested in the plate body inside that thermal conductivity is large.
The resistance of side heater progressively reduces from top to bottom.
The resistance width of side heater points on the base plate direction at the quartz crucible top, and width increases gradually from top to bottom.
Base plate is connected with the DS radiating block of rectangle away from an end of quartz crucible.
Be provided with top heater directly over quartz crucible.
Said structure comprises body of heater, is arranged on the interior heat-insulation cage body of body of heater, is arranged on the quartz crucible in the heat-insulation cage body, the quartz crucible bottom surface is pasted with base plate, base plate mainly consists of the plate body of at least 2 kinds of different thermal conductivitys, and the plate body that thermal conductivity is little is nested in the plate body inside that thermal conductivity is large.
Principle of design of the present utility model is: because each regional heat-sinking capability of original base plate is identical, therefore in the situation that each position heat capacity of well heater is identical, the quartz crucible surrounding all has with top the graphite heater heat supply that heat capacity is identical, thereby cause the temperature of crucible surrounding higher than quartz crucible middle part quartz crucible, make the temperature gradient distribution inequality.In order to address this problem, the utility model adopts the plate body of at least 2 kinds of different thermal conductivitys to form base plate, the mode that adopts the little plate body of thermal conductivity to be nested in the plate body inside that thermal conductivity is large forms base plate that can be different at the different zones heat conduction amount, after the base plate by after above-mentioned improvement is placed on the quartz crucible bottom surface, because the little plate body of thermal conductivity is nested in the plate body inside that thermal conductivity is large, therefore the radiating efficiency in quartz crucible bottom center zone is low, and the large plate body of the corresponding thermal conductivity in quartz crucible peripheral region, therefore the radiating efficiency of quartz crucible peripheral region is high, make like this quartz crucible peripheral region and burn-off rate descend, the burn-off rate that guarantees the quartz crucible central zone increases, can make thus speed all the reaching unanimity in any one some position of the solid state si material fusing of quartz crucible inside.To reach the uniform purpose of temperature gradient distribution.
Preferably, base plate mainly consists of the plate body of 3 kinds of different thermal conductivitys, is respectively: plate body A, plate body B, plate body C, the thermal conductivity of the thermal conductivity of the thermal conductivity of plate body A<plate body B<plate body C, plate body A is nested in plate body B, and plate body B is nested in plate body C.Can also be preferred, base plate mainly consists of the plate body of 4 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, plate body D, the thermal conductivity of the thermal conductivity of the thermal conductivity of plate body A<plate body B<plate body C<plate body D thermal conductivity, plate body A is nested in plate body B, plate body B is nested in plate body C, and plate body C is nested in plate body D.
Base plate can be considered as the minimum plate body of thermal conductivity and peripheral stacked plate body forms, the plate body of thermal conductivity minimum is positioned at the central zone of whole base plate, along the surrounding of the plate body of the thermal conductivity minimum plate body ring that several thermal conductivitys increase successively that is cascading, except the plate body of thermal conductivity minimum, remaining plate body is ring-plane structure.Peripheral stacked plate body can be straight-flanked ring, can be also circular rings, depending on the quartz crucible bottom shape.
Preferably, the plate body central point of thermal conductivity minimum aligns with quartz crucible bottom center's point.The inhomogeneous phenomenon of being heated appears in one side.
Also comprise and be arranged on the quartz crucible peripheric surface to the side heater between the heat-insulation cage tagma.
In addition, except above-mentioned solution, the resistance of side heater of the present utility model progressively reduces from top to bottom.Have heating source is improved, make the heat capacity of side heater bottom be less than the heat capacity on top, the heat that is radiated the crucible surrounding also just gradually reduces from top to bottom, thereby alleviates above-mentioned phenomenon.
In addition, except above-mentioned solution, the resistance width of side heater points on the base plate direction at the quartz crucible top, and width increases gradually from top to bottom, thereby causes the resistance of side heater progressively to reduce from top to bottom.Make the heat capacity of side heater bottom be less than the heat capacity on top, the heat that is radiated the crucible surrounding also just gradually reduces from top to bottom, thereby alleviates above-mentioned phenomenon.
The quartz crucible peripheric surface is pasted with backplate.
Backplate is connected with base plate by insulating panels near base plate one end.Because close base plate one end of the backplate of quartz crucible external application is connected with base plate by insulating panels, therefore the thermal conductivity of quartz crucible bottom is less, can reduce a part of heat in the silicon material fusion stage passes to crucible, thereby dwindle crucible inner radial temperature head, reduce the burn-off rate of crucible surrounding silicon material, make to melt interface and be tending towards smooth.
Base plate is connected with the DS radiating block of rectangle away from an end of quartz crucible.In addition, the utility model removes the heat-insulation and heat-preservation bar of DS radiating block top surrounding, be made into rectangular parallelepiped style or square style by originally being step-like DS radiating block, the whole top of DS radiating block is all contacted with base plate, the part heat of crucible surrounding can pass by the heat conducting mode of DS radiating block, increase its heat dissipation capacity, reduce the temperature of crucible surrounding, the radial temperature difference of balance crucible inside.With structure of the present utility model, produced, thereby grow, foreign matter content is few, the relatively uniform styloid of crystal grain, promotes the quality of efficient polycrystal silicon ingot.
Be provided with top heater directly over quartz crucible.
The beneficial effect that technical solutions of the utility model are brought is: by changing sidepiece well heater the heat deliverability at each position and the thermal conduction capability at crucible surrounding backplate, base plate and each position of DS radiating block up and down, can effectively control the warm field distribution of ingot furnace inside, improve fusing and long crystal boundary face center epirelief phenomenon, make solid-liquid interface be tending towards smooth, and be conducive to the discharge of impurity in long brilliant process, thereby the output foreign matter content is few, the relatively uniform efficient polycrystal silicon ingot of crystal grain.
The accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is prior art crucible bottom plate schematic top plan view.
The crucible bottom plate schematic top plan view that Fig. 3 provides for the utility model.
Fig. 4 is prior art DS radiating block schematic side view.
The DS radiating block schematic side view that Fig. 5 provides for the utility model.
Fig. 6 is prior art silicon material fusing interface schematic diagram.
Fig. 7 is silicon material fusing interface schematic diagram in the utility model structure.
Reference numeral in figure is expressed as respectively: 1-body of heater, 2-heat-insulation cage body, 3-backplate, 4-quartz crucible, 5-silicon melt, 6-base plate, 7-DS radiating block, 8-top heater, 9-solid state si material, 10-side heater.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but embodiment of the present utility model is not limited to this.
Embodiment 1:
As shown in Figures 1 to 7.
A kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate, comprise body of heater 1, be arranged on the interior heat-insulation cage body 2 of body of heater 1, be arranged on the quartz crucible 4 in heat-insulation cage body 2, quartz crucible 4 bottom surfaces are pasted with base plate 6, base plate 6 mainly consists of the plate body of at least 2 kinds of different thermal conductivitys, and the plate body that thermal conductivity is little is nested in the plate body inside that thermal conductivity is large.
Principle of design of the present utility model is: because each regional heat-sinking capability of original base plate is identical, therefore in the situation that each position heat capacity of well heater is identical, the quartz crucible surrounding all has with top the graphite heater heat supply that heat capacity is identical, thereby cause the temperature of crucible surrounding higher than quartz crucible middle part quartz crucible, make the temperature gradient distribution inequality.In order to address this problem, the utility model adopts the plate body of at least 2 kinds of different thermal conductivitys to form base plate 6, the mode that adopts the little plate body of thermal conductivity to be nested in the plate body inside that thermal conductivity is large forms base plate that can be different at the different zones heat conduction amount, after the base plate by after above-mentioned improvement is placed on quartz crucible 4 bottom surfaces, because the little plate body of thermal conductivity is nested in the plate body inside that thermal conductivity is large, therefore the radiating efficiency in quartz crucible 4 bottom center zones is low, and the large plate body of the corresponding thermal conductivity in quartz crucible 4 peripheral regions, therefore the radiating efficiency of quartz crucible 4 peripheral regions is high, make like this quartz crucible 4 peripheral regions and burn-off rate descend, the burn-off rate that guarantees quartz crucible 4 central zones increases, can make thus speed all the reaching unanimity in any one some position of the solid state si material fusing of quartz crucible 4 inside.To reach the uniform purpose of temperature gradient distribution.
Embodiment 2:
As shown in Figures 1 to 7.
The difference of the present embodiment and embodiment 1 is, preferably, base plate 6 mainly consists of the plate body of 3 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, the thermal conductivity of the thermal conductivity of the thermal conductivity of plate body A<plate body B<plate body C, plate body A is nested in plate body B, and plate body B is nested in plate body C.Can also be preferred, base plate 6 mainly consists of the plate body of 4 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, plate body D, the thermal conductivity of the thermal conductivity of the thermal conductivity of plate body A<plate body B<plate body C<plate body D thermal conductivity, plate body A is nested in plate body B, plate body B is nested in plate body C, and plate body C is nested in plate body D.
Base plate 6 can be considered as the minimum plate body of thermal conductivity and peripheral stacked plate body forms, the plate body of thermal conductivity minimum is positioned at the central zone of whole base plate, along the surrounding of the plate body of the thermal conductivity minimum plate body ring that several thermal conductivitys increase successively that is cascading, except the plate body of thermal conductivity minimum, remaining plate body is ring-plane structure.Peripheral stacked plate body can be straight-flanked ring, can be also circular rings, depending on quartz crucible 4 bottom shapes.
Preferably, the plate body central point of thermal conductivity minimum aligns with quartz crucible 4 bottom center's points.The inhomogeneous phenomenon of being heated appears in one side.
Embodiment 3:
As shown in Figures 1 to 7.
The present embodiment, on the basis of embodiment 1, also comprises and is arranged on the side heater 10 of quartz crucible 4 peripheric surfaces to heat-insulation cage body 2 intervals.
In addition, except above-mentioned solution, the resistance of side heater 10 of the present utility model progressively reduces from top to bottom.Have heating source is improved, make the heat capacity of side heater bottom be less than the heat capacity on top, the heat that is radiated the crucible surrounding also just gradually reduces from top to bottom, thereby alleviates above-mentioned phenomenon.
In addition, except above-mentioned solution, the resistance width of side heater 10 points on the base plate direction at quartz crucible 4 tops, and width increases gradually from top to bottom, thereby causes the resistance of side heater 10 progressively to reduce from top to bottom.Make the heat capacity of side heater bottom be less than the heat capacity on top, the heat that is radiated the crucible surrounding also just gradually reduces from top to bottom, thereby alleviates above-mentioned phenomenon.
Embodiment 4:
As shown in Figures 1 to 7.
The present embodiment is on the basis of embodiment 1 and embodiment 2, and quartz crucible 4 peripheric surfaces are pasted with backplate 3.
Backplate 3 is connected with base plate 6 by insulating panels near base plate 6 one ends.Because close base plate 6 one ends of the backplate of quartz crucible external application are connected with base plate 6 by insulating panels, therefore the thermal conductivity of quartz crucible bottom is less, can reduce a part of heat in the silicon material fusion stage passes to crucible, thereby dwindle crucible inner radial temperature head, reduce the burn-off rate of crucible surrounding silicon material, make to melt interface and be tending towards smooth.
Embodiment 5:
As shown in Figures 1 to 7.
The present embodiment is on the basis of embodiment 1 and embodiment 2, and base plate 6 is connected with the DS radiating block 7 of rectangle away from an end of quartz crucible.In addition, the utility model removes the heat-insulation and heat-preservation bar of DS radiating block top surrounding, be made into rectangular parallelepiped style or square style by originally being step-like DS radiating block, the whole top of DS radiating block is all contacted with base plate, the part heat of crucible surrounding can pass by the heat conducting mode of DS radiating block, increase its heat dissipation capacity, reduce the temperature of crucible surrounding, the radial temperature difference of balance crucible inside.
Embodiment 6:
As shown in Figures 1 to 7.
The present embodiment, on the basis of embodiment 1 and embodiment 2, is provided with top heater 8 directly over quartz crucible 4.
Embodiment 7:
As shown in Figures 1 to 7.
General design scheme of the present utility model is: comprise body of heater, heat-insulation cage body, backplate, quartz crucible, silicon melt 5, base plate, DS radiating block, top heater, solid state si material 9, side heater.When quartz crucible adopts the efficient polycrystal silicon ingot of existing thermal field structure production, due to top heater, each position of sidepiece well heater has identical heat capacity, crucible external application backplate and base plate also have the identical capacity of heat transmission, and the capacity of heat transmission of the DS radiating block contacted from base plate and heat preservation strip is different, DS radiating block top external diameter arranges heat preservation strip, heat preservation strip has the effect of heat-insulation and heat-preservation, cause the temperature of crucible surrounding higher than middle part, in stove, radially thermograde is larger, solid-liquid interface is wave, center is to upper process, and center epirelief phenomenon is more and more obvious to bottom from the crucible top, as shown in Figure 6.So, there is stress at the very start in the crystallizing layer of quartz crucible bottom, is unfavorable for the growth of efficient polycrystal silicon ingot.And the designed thermal field structure of the utility model, backplate 3 connection insulating panels due to the quartz crucible external application, thermal conductivity is less, can reduce a part of heat in the silicon material fusion stage passes to crucible, thereby dwindle crucible inner radial temperature head, reduce the burn-off rate of crucible surrounding silicon material, make to melt interface and be tending towards smooth.Crucible bottom plate 6 adopts respectively the different material of thermal conductivity to make from the center to the periphery simultaneously, as shown in Figure 3, thermal conductivity A district<B district<C district, center adopts the less material of thermal conductivity, the calorific loss at minimizing center, peripheral adopt the material that thermal conductivity is larger, strengthen the capacity of heat transmission of surrounding, thereby alleviate fusing center, interface epirelief phenomenon.In addition, the utility model removes the heat-insulation and heat-preservation bar of DS radiating block 7 top surroundings, be made into the rectangular parallelepiped style by originally being step-like DS radiating block, whole top is all contacted with crucible bottom plate, the part heat of crucible surrounding can pass by heat conducting mode, increase its heat dissipation capacity, reduce the temperature of crucible surrounding, the radial temperature difference of balance crucible inside.More and more obvious to bottom from the crucible top for fusing center, interface epirelief phenomenon, the utility model is made into upper and lower width by sidepiece well heater 10, thickness is inconsistent pattern all, the resistance of well heater is progressively reduced from top to bottom, under same condition, the heat capacity of well heater bottom is less than the heat capacity on top, the heat that is radiated the crucible surrounding also just gradually reduces from top to bottom, thereby alleviate above-mentioned phenomenon, make solid-liquid interface further be tending towards smooth, as shown in Figure 7, thereby it is few to grow foreign matter content, crystal grain is styloid relatively uniformly, promote the quality of efficient polycrystal silicon ingot.Above-mentioned quartz crucible is called for short crucible.
Embodiment 8:
As shown in Figures 1 to 7.
A kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate, comprise body of heater 1, be arranged on the interior heat-insulation cage body 2 of body of heater 1, be arranged on the quartz crucible 4 in heat-insulation cage body 2, it is characterized in that: quartz crucible 4 bottom surfaces are pasted with base plate 6, quartz crucible 4 peripheric surfaces are pasted with backplate 3, and backplate 3 is connected with base plate 6 by insulating panels near base plate 6 one ends.
Embodiment 9:
As shown in Figures 1 to 7.
The present embodiment is on the basis at embodiment 8, base plate 6 mainly consists of the plate body of 3 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, the thermal conductivity of the thermal conductivity of the thermal conductivity of plate body A<plate body B<plate body C, plate body A is nested in plate body B, and plate body B is nested in plate body C.
The plate body central point of thermal conductivity minimum aligns with quartz crucible 4 bottom center's points.
Embodiment 10:
As shown in Figures 1 to 7.
The present embodiment is on the basis at embodiment 8, also comprise and be arranged on the side heater 10 of quartz crucible 4 peripheric surfaces to heat-insulation cage body 2 intervals, base plate 6 mainly consists of the plate body of at least 2 kinds of different thermal conductivitys, and the plate body that thermal conductivity is little is nested in the plate body inside that thermal conductivity is large.
The resistance of side heater 10 progressively reduces from top to bottom.
The resistance width of side heater 10 points on the base plate direction at quartz crucible 4 tops, and width increases gradually from top to bottom.
Base plate 6 is connected with the DS radiating block 7 of rectangle away from an end of quartz crucible.
Be provided with top heater 8 directly over quartz crucible 4.
The improvement project of the improvement project of the above-mentioned improvement project for the DS radiating block, base plate, the improvement project of side heater, backplate all can be implemented separately, when four schemes in conjunction with after best results.
As above can realize preferably the utility model.
Claims (8)
1. the efficient polycrystal silicon ingot ingot furnace with adiabatic backplate, comprise body of heater (1), be arranged on the interior heat-insulation cage body (2) of body of heater (1), be arranged on the quartz crucible (4) in heat-insulation cage body (2), it is characterized in that: quartz crucible (4) bottom surface is pasted with base plate (6), quartz crucible (4) peripheric surface is pasted with backplate (3), and backplate (3) is connected with base plate (6) by insulating panels near base plate (6) one ends.
2. a kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate according to claim 1, it is characterized in that: base plate (6) mainly consists of the plate body of 3 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, the thermal conductivity of the thermal conductivity of the thermal conductivity of plate body A<plate body B<plate body C, plate body A is nested in plate body B, and plate body B is nested in plate body C.
3. a kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate according to claim 2, it is characterized in that: the plate body central point of thermal conductivity minimum aligns with quartz crucible (4) bottom center's point.
4. a kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate according to claim 1, it is characterized in that: also comprise and be arranged on quartz crucible (4) peripheric surface to the interval side heater (10) of heat-insulation cage body (2), base plate (6) mainly consists of the plate body of at least 2 kinds of different thermal conductivitys, and the plate body that thermal conductivity is little is nested in the plate body inside that thermal conductivity is large.
5. a kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate according to claim 4, it is characterized in that: the resistance of side heater (10) progressively reduces from top to bottom.
6. a kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate according to claim 4 is characterized in that: the resistance width of side heater (10) points on the base plate direction at quartz crucible (4) top, and width increases gradually from top to bottom.
7. a kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate according to claim 1, it is characterized in that: base plate (6) is connected with the DS radiating block (7) of rectangle away from an end of quartz crucible.
8. a kind of efficient polycrystal silicon ingot ingot furnace with adiabatic backplate according to claim 1, is characterized in that: be provided with top heater (8) directly over quartz crucible (4).
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| CN201320501722.6U CN203382848U (en) | 2013-08-16 | 2013-08-16 | High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105921366A (en) * | 2016-06-30 | 2016-09-07 | 苏州博来喜电器有限公司 | Disc base material sizing machine |
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
| CN116254591A (en) * | 2022-12-22 | 2023-06-13 | 奕瑞新材料科技（太仓）有限公司 | Crystal batch growth equipment and method for batch growth of halide scintillation crystals |
-
2013
- 2013-08-16 CN CN201320501722.6U patent/CN203382848U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105921366A (en) * | 2016-06-30 | 2016-09-07 | 苏州博来喜电器有限公司 | Disc base material sizing machine |
| CN105921366B (en) * | 2016-06-30 | 2018-10-30 | 苏州博来喜电器有限公司 | Disk base material sizing applicator |
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
| CN116254591A (en) * | 2022-12-22 | 2023-06-13 | 奕瑞新材料科技（太仓）有限公司 | Crystal batch growth equipment and method for batch growth of halide scintillation crystals |
| CN116254591B (en) * | 2022-12-22 | 2024-04-16 | 奕瑞新材料科技（太仓）有限公司 | Crystal batch growth equipment and method for batch growth of halide scintillation crystals |
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