CN202022993U - Heating device of polysilicon ingot furnace with split-control top - Google Patents
Heating device of polysilicon ingot furnace with split-control top Download PDFInfo
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- CN202022993U CN202022993U CN2011200787517U CN201120078751U CN202022993U CN 202022993 U CN202022993 U CN 202022993U CN 2011200787517 U CN2011200787517 U CN 2011200787517U CN 201120078751 U CN201120078751 U CN 201120078751U CN 202022993 U CN202022993 U CN 202022993U
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- heater
- crucible
- heating device
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- insulation cage
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Abstract
The utility model relates to the technical field of polysilicon ingot furnace manufacture, and aims at providing a heating device of the polysilicon ingot furnace with a split-control top. The heating device comprises a furnace chamber inside which an insulation cage is arranged. The upper portion of the insulation cage and the lower portion of the insulation cage are respectively provided with a top heat preservation plate and a lower heat preservation layer. A crucible with a protection plate attached to the outside is located in the insulation cage. The heating device is provided with two heaters, one is a top heater arranged above the crucible, and the other is a lateral heater circularly arranged on the periphery of the protection plate of the crucible. The heating device can control the temperature of the thermal field during crystal growth and optimize the ratio of the top heating power and the lateral heating power according to requirements in order to effectively control the crystallization and solidification of the silicon and further to improve efficiency of crystal growth, reduce energy consumption and improve quality of the silicon ingot. The heating device is reasonable in structure and capable of effectively improving crystal orientation of the polysilicon, reducing energy consumption, enlarging the crystal grain, reducing crystal boundaries and accordingly improving the quality of the polysilicon ingot.
Description
Technical field
The utility model relates to the manufacturing technology field of polycrystalline silicon ingot or purifying furnace, and particularly a kind of top side is the polycrystalline silicon ingot or purifying furnace heating unit of control separately, is applicable to make the high-quality polycrystal silicon ingot of large size.
Background technology
Sun power is human inexhaustible renewable and clean energy resource, in effective utilization of sun power, and main, the most great-hearted beyond doubt research field of solar energy power generating, and develop and developed solar cell thus.Solar cell mainly is raw material with silicon, and silicon is the common a kind of chemical element of nature, and purified silicon fusing point is 1414 ℃, is used for solar-grade polysilicon purity generally more than 99.99%.
Polycrystalline silicon ingot or purifying furnace is a kind of silicon remelting device of specialty, is used to produce qualified solar-grade polysilicon ingot casting.Ingot casting production is earlier satisfactory polycrystalline silicon raw material to be packed in the stove, then according to technique initialization heat, melt, each steps such as long crystalline substance, annealing, cooling, the process of polycrystal silicon ingot taking-up the most at last.In the production process of polycrystalline silicon ingot or purifying furnace, can control thermograde in the polycrystalline silicon ingot or purifying furnace effectively, the polycrystal silicon ingot quality that decision is produced.
There is a large amount of crystal boundaries in casting polycrystalline silicon inside, and clean crystal boundary is non-electroactive, to the minority carrier lifetime did not influence or have only minor impact, and the poly-partially or precipitation of impurity can change the electroactive of crystal boundary, can significantly reduce minority carrier lifetime, crystal boundary is many more, influences big more; But studies show that, if crystal boundary perpendicular to device surface, then crystal boundary is to almost not influence of material electrochemical performance.And the polycrystalline silicon ingot or purifying furnace of existing single supply structure is because the deficiency on the structure design is difficult to solve the out-of-level problem of crystal plane.This dual power supply patent is promptly solving the horizontal problem of this crystal plane.
The utility model content
The technical problems to be solved in the utility model is to overcome deficiency of the prior art, the polycrystalline silicon ingot or purifying furnace heating unit that provides a kind of top side separately to control.
Be the technical solution problem, the utility model provides the separately polycrystalline silicon ingot or purifying furnace heating unit of control of a kind of top side, comprise that inside is equipped with the furnace chamber of heat-insulation cage body, the heat-insulation cage body is provided with top warming plate and following thermal insulation layer up and down respectively, and the crucible of external application crucible backplate is arranged in the heat-insulation cage body; This heating unit has two well heaters: one of them is a top heater, is located at the top of crucible; Another is the sidepiece well heater, is located on around the crucible backplate.
In the utility model, described top heater links to each other with the heater top transformer through the top heater electrode; The sidepiece well heater links to each other with side well heater transformer through the side heater electrode.
In the utility model, described top heater is fixed on the top heater electrode, and the sidepiece well heater is fixed on the side heater electrode.
In the utility model, heat-insulation cage body, top warming plate reach the thermal field chamber of a sealing of thermal insulation layer composition down.Top heater, sidepiece well heater are heated by transformer-supplied separately, and the output of transformer just can be controlled the heat that each well heater produces, and then improve the distribution of thermograde in the thermal field.
The beneficial effects of the utility model are:
Can be in long brilliant process to thermal field in temperature control, by the output rating of independent control top, side well heater, the ratio of properly distributed top side heater power can form a vertical thermograde in crystallisation process.And optimize the proportioning of top side heating power as required, thus the crystallization and freezing of silicon is controlled effectively, and then accelerate long brilliant efficient, and cut down the consumption of energy, improve the silicon ingot quality.
The utility model is tested in actual applications, can not only produce high-quality polycrystal silicon ingot, also can shorten the whole process time, reduces the power consumption in the crystallisation process.
Of the present utility model reasonable in design, can effectively improve the polysilicon crystal orientation, cut down the consumption of energy, increase crystal grain, reduce crystal boundary, thereby improve the polycrystal silicon ingot quality.
Description of drawings
Fig. 1 is the utility model one-piece construction sectional view.
Reference numeral among the figure is: 1 heater top transformer, 2 heater top electrodes, 3 top thermal insulation layers, 4 heater tops, 5 side well heaters, 6 heat-insulation cage bodies, 7 crucible backplates, 8 pillar stiffeners, 9 times thermal insulation layers, 10 side well heater transformers, 11 side heater electrodes, 12 bodies of heater, 13 crucibles, 14 radiating blocks.
The long brilliant speed comparison diagram of Fig. 2 single supply and dual power supply.
Fig. 3 crystal height changes comparison diagram with the crystal growth time.
Fig. 4 heater power is variation diagram in time.
The crystal growth interface shape of Fig. 5 single supply.
The crystal growth interface shape of Fig. 6 dual power supply.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.
In the present embodiment, the top side separately polycrystalline silicon ingot or purifying furnace heating unit of control comprises furnace chamber 12, place the heat-insulation cage body 6 in the furnace chamber 12, hang on the top warming plate 3 on the electrode, be fixed in the top heater 4 on the top heater electrode 2, be connected in the heater top transformer 1 on the top heater electrode 2, be fixed in the sidepiece well heater 5 on the side heater electrode 11, be connected in the side well heater transformer 10 on the sidepiece heater electrode 11, be positioned at the crucible 13 and the crucible backplate 7 of thermal field well heater inside, place formations such as following thermal insulation layer 9 on the graphite pillar stiffener 8 and radiating block 14.
The utility model will be further described below in conjunction with the production of polysilicon flow process:
During actual production, produce a large amount of heats after the top side well heater obtains powering,, after fusing is finished, enter the long crystalline substance stage the fusing of the polycrystalline silicon material in the crucible 13.Heat-insulation cage body 6 is slowly mentioned by certain speed, and after radiating block 7 came out, a large amount of heat can be radiated on the furnace chamber 12 by radiating block 7, so crucible 13 bottom temps descend, solution begins crystallization.In the long brilliant middle and later periods, because crystal increases, liquid reduces, and radiating block 7 dissipated heat effects weaken, and crucible wall place is near side well heater 5, and the relative crucible of temperature center is higher, and crystallization velocity is slower, thereby long crystal boundary face is " protruding " font.Finally, finish and thoroughly center earlier long crystalline substance, and brilliant operation is grown in the corner of carrying out a few hours subsequently again can make whole silicon ingot surfacing.
Adopt device of the present utility model, can progressively reduce the power of side well heater 5, reduce the temperature of edge, make it close, and then make crystal plane be tending towards level, guarantee crystal mass with the center temperature in the long brilliant middle and later periods; Subsidiaryly simultaneously shortened the long brilliant time of corner, finally improved the crystal orientation, raised the efficiency and reduce power consumption.
Example:
In the present embodiment, single supply is meant and uses the single channel power supply to give the situation of heating installation power supply in the prior art; Dual power supply is meant the situation of using the two-way power supply to give two heating installation power supplies respectively in the utility model.
The polycrystalline ingot furnace device and the technology that adopt this patent to describe, charging 480kg adopts two kinds of patterns of single supply and dual power supply equipment heating to carry out crystal growth respectively, contrasts the influence of two kinds of technology to long brilliant speed, crystal mass and energy consumption.
As seen from Figure 2, in the most initial 2～6 hours of long brilliant process, the long brilliant speed of single supply equipment is higher than dual power supply, but after crystal growth begins 6 hours, crystalline growth velocity in the dual power supply equipment is higher than single supply all the time, and final dual power supply equipment is compared single supply equipment and finished crystal growth in about in advance 3 hours.
As shown in Figure 3, be in the long brilliant processes of two kinds of equipment crystal height with the variation contrast of crystal growth time.The starting stage of crystal growth, because crystalline growth velocity is lower slightly in the dual power supply equipment,, surpass single supply with the later stage crystalline growth velocity so crystal height is also lower slightly, crystal height obviously surpasses single supply in the dual power supply equipment, the final long brilliant process of having finished than morning.
Be heater power change curve in time as shown in Figure 4.In long brilliant preceding half period, the dual power supply plant capacity is a little more than single supply equipment, but enters the second half section, and dual power supply power descends rapidly, and heating power is lower than the long brilliant process of single supply significantly.
By computer simulation, analyzed the crystal growth interface shape of using the long brilliant process of list/dual power supply.As Fig. 5, in the long brilliant later stage of single supply, the side well heater can not cut out, and causes the input of crystal on side face heat more, and slow near the crystal growth of sidewall, a growth interface obviously center is outstanding.In Fig. 6, owing to adopted double-heater, long brilliant later stage side well heater cuts out, only surplus top heater heating, and intracrystalline heat is transmission vertically mainly, and growth interface is more smooth.
By to carrying out section processing by the polycrystalline ingot casting that grows in single supply and the dual power supply equipment, can clearly find out, the growth vertically that the crystal grain of the polycrystalline ingot casting that grows in the dual power supply equipment is more regular helps improving final crystal yield and transformation efficiency.
By above contrast, can sum up the advantage of dual power supply polycrystalline casting unit with respect to the single supply casting unit:
(1) crystalline growth velocity improves, and shortens the long brilliant time;
(2) the heater power total power reduces, and because its crystal growth time shortens, energy consumption significantly reduces;
(3) dual power supply makes crystal growth interface more smooth, and the crystal grain verticality is better and help it and grow up, and crystal mass improves.
Claims (3)
1. the top side polycrystalline silicon ingot or purifying furnace heating unit of control separately comprises that inside is equipped with the furnace chamber of heat-insulation cage body, and the heat-insulation cage body is provided with top warming plate and following thermal insulation layer up and down respectively, and the crucible of external application crucible backplate is arranged in the heat-insulation cage body; It is characterized in that this heating unit has two well heaters: one of them is a top heater, is located at the top of crucible; Another is the sidepiece well heater, is located on around the crucible backplate.
2. polycrystalline silicon ingot or purifying furnace heating unit according to claim 1 is characterized in that, described top heater links to each other with the heater top transformer through the top heater electrode; The sidepiece well heater links to each other with side well heater transformer through the side heater electrode.
3. polycrystalline silicon ingot or purifying furnace heating unit according to claim 1 and 2 is characterized in that, described top heater is fixed on the top heater electrode, and the sidepiece well heater is fixed on the side heater electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200787517U CN202022993U (en) | 2011-03-23 | 2011-03-23 | Heating device of polysilicon ingot furnace with split-control top |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200787517U CN202022993U (en) | 2011-03-23 | 2011-03-23 | Heating device of polysilicon ingot furnace with split-control top |
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| Publication Number | Publication Date |
|---|---|
| CN202022993U true CN202022993U (en) | 2011-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200787517U Expired - Lifetime CN202022993U (en) | 2011-03-23 | 2011-03-23 | Heating device of polysilicon ingot furnace with split-control top |
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| Country | Link |
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| CN (1) | CN202022993U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140673A (en) * | 2011-03-23 | 2011-08-03 | 上虞晶信机电科技有限公司 | Polycrystalline silicon ingot furnace heating device with separately controlled top and side |
| CN110565163A (en) * | 2019-10-17 | 2019-12-13 | 晶科能源有限公司 | Ingot casting heater and ingot casting furnace |
-
2011
- 2011-03-23 CN CN2011200787517U patent/CN202022993U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140673A (en) * | 2011-03-23 | 2011-08-03 | 上虞晶信机电科技有限公司 | Polycrystalline silicon ingot furnace heating device with separately controlled top and side |
| CN110565163A (en) * | 2019-10-17 | 2019-12-13 | 晶科能源有限公司 | Ingot casting heater and ingot casting furnace |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20111102 |