CN201506708U - Thermal field structure for polycrystalline ingot production furnace - Google Patents
Thermal field structure for polycrystalline ingot production furnace Download PDFInfo
- Publication number
- CN201506708U CN201506708U CN2009200495206U CN200920049520U CN201506708U CN 201506708 U CN201506708 U CN 201506708U CN 2009200495206 U CN2009200495206 U CN 2009200495206U CN 200920049520 U CN200920049520 U CN 200920049520U CN 201506708 U CN201506708 U CN 201506708U
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- thermal field
- furnace body
- crucible
- heat
- insulation cage
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- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000009413 insulation Methods 0.000 claims abstract description 33
- 239000000725 suspension Substances 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 238000010792 warming Methods 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 240000003936 Plumbago auriculata Species 0.000 claims 1
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract 3
- 239000013078 crystal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 241000209456 Plumbago Species 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 235000019628 coolness Nutrition 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The utility model relates to a thermal field structure for a polycrystalline ingot production furnace, which comprises an upper furnace body and a lower furnace body; a heat insulation cage with a suspension rod, and an upper heat retaining board are arranged in the upper furnace body, a lower heat retaining board supported by a support column is arranged in the lower furnace body, a workbench in the heat insulation cage is also supported by the support column, a crucible is placed on the workbench, a cover plate is arranged on the crucible, a top heater connected with the upper heat retaining board is arranged above the cover plate, the periphery of the crucible is provided with a side heater connected with the upper heat retaining board, thermal field separation bars are evenly arranged between the workbench and the heat insulation cage with interval, and the thermal field separation bars are fixed on the upper heat retaining board through a connecting plate. The heat insulation cage can effectively maintain the interior high-temperature environment and reduce the heat loss; the thermal field is divided by the thermal field separation bars into an upper high-temperature area and a lower low-temperature area so that the volume of the high-temperature area is effectively reduced and the energy consumption is reduced by about 20%; as heat retaining bars are arranged around the workbench, the interior of the heat insulation cage is ensured to maintain even, stable and vertical temperature gradient.
Description
Technical field
The utility model relates to the design and development field of polysilicon cast ingot stove thermal field structure, specifically is that a kind of feeding intake is the thermal field structure of the polysilicon cast ingot stove of 450Kg level.
Background technology
Energy and environment are two large focal spot problems of the world today.The significantly utilization of traditional energy makes environmental problem be on the rise, to the serious threat of normal operation formation of human society.Effectively utilizing cleaning, eco-friendly new forms of energy is inevitable choices of social history.Sun power is human inexhaustible, nexhaustible, eco-friendly green regenerative energy sources.In the middle of effective utilization of sun power, solar photovoltaic utilization is fast, the most most active research field of development in recent years.Wherein, silicon materials are main carriers of solar photovoltaic utilization, and the preparation of silicon crystal is the basis of photovoltaic cell.
Polycrystalline silicon ingot or purifying furnace is a kind of equipment that collects fusing and recrystallize one, is used for low cost production solar-grade polysilicon ingot casting.In the production,, drop in the stove,, produce the polycrystalline crystal ingot that meets the demands by technologies such as heating, fusing, directional long crystal, annealing, coolings with the polycrystalline silicon material of the certain proportioning quartz crucible of packing into.In this series of process process, all require the quartz crucible of charging to be in thousands of degrees centigrade the hot environment, in order to reduce calorific loss, cut down the consumption of energy and provide rational temperature to distribute, we must make up a rational hot environment by lagging material and support component.This integral body that comprises lagging material and support component is referred to as thermal field.Reasonably thermal field structure not only can reduce the production energy consumption of polycrystalline crystal ingot, also can provide rational thermal field to distribute, i.e. rational temperature gradient is to produce high-quality polysilicon crystal.
The shape of crystalizing interface is one of principal element that influences the polysilicon crystal quality, and smooth long crystal boundary face not only can obtain the bigger column crystal of effective diameter, also can reduce crystal boundary, reduce the dislocation desity in the crystal, thereby improve the performance of battery sheet.And existing polycrystalline silicon ingot or purifying furnace is because the defective on the structure design, and in long brilliant process, its crystalizing interface is difficult to reach above-mentioned requirements.
The utility model content
The technical problems to be solved in the utility model is: provide a kind of reasonable in design, can effectively improve the thermal field structure of the polycrystalline silicon ingot or purifying furnace of polycrystalline silicon ingot quality.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of thermal field structure of polysilicon cast ingot stove, comprise upper furnace body and lower furnace body, be provided with GRD geared heat-insulation cage and last warming plate in the upper furnace body, be provided with following warming plate in the lower furnace body by shore supports, the while pillar also supports the interior worktable of heat-insulation cage, place crucible on the worktable, crucible is provided with cover plate, the cover plate top has the heater top that is connected on the warming plate, has the side well heater that is connected on the warming plate around the crucible, evenly be provided with the thermal field dividing strip between worktable and the heat-insulation cage at interval, with the distance of heat-insulation cage be 0.5～1cm, the thermal field dividing strip is fixed on the warming plate by web plate.
Be provided with the insulation bar around the described worktable,, keep the thermograde of level to reduce worktable heat radiation all around.
Described crucible has be close to inside and outside two-layer, and internal layer is a quartz crucible, and skin is a plumbago crucible, and the sustainable hot environment of keeping reduces heat and scatters and disappears.
Described lower furnace body inner bottom part is provided with the protection felt.
The beneficial effects of the utility model are: reasonable in design, heat-insulation cage can effectively be kept inner hot environment, reduces heat and scatters and disappears; The thermal field that is arranged so that of thermal field dividing strip is divided into high-temperature zone, top and bottom cold zone, has effectively reduced the volume of high-temperature zone, has reduced energy consumption; In conjunction with the setting that is incubated bar around the worktable, make to keep a uniform and stable and vertical thermograde in the heat-insulation cage; By simulation analysis, the brilliant process of whole length all can be kept comparatively smooth crystalizing interface, and energy consumption can reduce nearly 20%.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is the utility model one-piece construction sectional view;
Structure sectional view when Fig. 2 is the utility model user mode.
Wherein: 1. suspension rod, 2. upper furnace body, 3. heat-insulation cage; 4. quartz crucible, 5. thermal field dividing strip, 6. lower furnace body; 7. protection felt, 8. pillar 9. descends warming plate; 10. worktable, 11. insulation bars, 12. silicon material; 13. the side well heater, 14. web plates, 15. plumbago crucibles; 17. cover plate, warming plate on 18., 19. heater tops.
Embodiment
As Fig. 1; shown in 2; a kind of thermal field structure of polysilicon cast ingot stove; comprise upper furnace body 2 and lower furnace body 6; be provided with the heat-insulation cage 3 and the last warming plate 18 of band suspension rod 1 in the upper furnace body 2; be provided with the following warming plate 9 that supports by pillar 8 in the lower furnace body 6; pillar 8 and support worktable 10 in the heat-insulation cage 3 simultaneously; place crucible on the worktable 10; crucible has be close to inside and outside two-layer; internal layer is a quartz crucible 4; skin is a plumbago crucible 15; crucible is provided with cover plate 17; cover plate 17 tops have the heater top 19 that is connected on the warming plate 18; have the side well heater 13 that is connected on the warming plate 18 around the crucible, evenly be provided with thermal field dividing strip 5 at interval between worktable 10 and the heat-insulation cage 3, thermal field dividing strip 5 is fixed on the warming plate 18 by web plate 14; be provided with insulation bar 11 around the worktable 10, lower furnace body 6 inner bottom parts are provided with protection felt 7.
Production technique below in conjunction with polysilicon is described further the utility model:
After quartz crucible 4 is filled silicon material 12, be positioned on the worktable 10, lower furnace body 6 rises with upper furnace body 2 closed fully.Heat-insulation cage 3 descends and following warming plate 9 closures.To vacuumize in the furnace chamber, when reaching the vacuum tightness of processing requirement, side well heater 13 and heater top 19 are started working, because the insulation effect of heat-insulation cage 3, temperature in the heat-insulation cage 3 can be elevated to more than 1400 degree centigrade high temperature, make can the melting fully of silicon material 12 of hundreds of kilogram at more than ten hours.According to processing requirement, the insulation certain hour makes that the impurity in the silicon material 12 fully volatilizees, and it is even that composition is tending towards.After entering long brilliant operation stage, slowly rise heat-insulation cage 3 according to technique initialization.Because the effect of heat-insulation cage 3 lagging materials, heat-insulation cage 3 is inside and outside the very big temperature difference, after rising heat-insulation cage 3, the bottom of worktable 10 and lower furnace body 6 be cooling rapidly under the effect of radiation heat transfer, makes the bottom Yin Wendu of quartz crucible 4 reduce and at first crystallization.Simultaneously, because the layout of thermal field dividing strip 5 around the plumbago crucible 15, make heat-insulation cage 3 upper spaces, under the heat effect of side well heater 13 and heater top 19, still keep a needed hot environment of processing requirement with lower power consumption.Simultaneously, the space of worktable 10 bottoms is because thermolysis, temperature is lower, like this, and by the lifting amplitude of control heating and heat-insulation cage 3, make the crystalizing interface of silicon form a vertical temperature gradient field, keep comparatively smooth crystalizing interface, produce high-quality polycrystal silicon ingot.
Claims (4)
1. the thermal field structure of a polysilicon cast ingot stove, comprise upper furnace body (2) and lower furnace body (6), be provided with the heat-insulation cage (3) and the last warming plate (18) of band suspension rod (1) in the upper furnace body (2), be provided with the following warming plate (9) that supports by pillar (8) in the lower furnace body (6), while pillar (8) also supports the interior worktable (10) of heat-insulation cage (3), worktable (10) is gone up and is placed crucible, it is characterized in that: crucible is provided with cover plate (17), cover plate (17) top has the heater top (19) that is connected on the warming plate (18), has the side well heater (13) that is connected on the warming plate (18) around the crucible, evenly be provided with thermal field dividing strip (5) at interval between worktable (10) and the heat-insulation cage (3), thermal field dividing strip (5) is fixed on the warming plate (18) by web plate (14).
2. the thermal field structure of a kind of polysilicon cast ingot stove according to claim 1 is characterized in that: described worktable (10) is provided with insulation bar (11) all around.
3. the thermal field structure of a kind of polysilicon cast ingot stove according to claim 1 is characterized in that: described crucible has be close to inside and outside two-layer, and internal layer is quartz crucible (4), and skin is plumbago crucible (15).
4. the thermal field structure of a kind of polysilicon cast ingot stove according to claim 1 is characterized in that: described lower furnace body (6) inner bottom part is provided with protection felt (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200495206U CN201506708U (en) | 2009-09-29 | 2009-09-29 | Thermal field structure for polycrystalline ingot production furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200495206U CN201506708U (en) | 2009-09-29 | 2009-09-29 | Thermal field structure for polycrystalline ingot production furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201506708U true CN201506708U (en) | 2010-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009200495206U Expired - Fee Related CN201506708U (en) | 2009-09-29 | 2009-09-29 | Thermal field structure for polycrystalline ingot production furnace |
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| CN (1) | CN201506708U (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101851782A (en) * | 2010-05-19 | 2010-10-06 | 绍兴县精功机电研究所有限公司 | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace |
| CN101886291A (en) * | 2010-07-13 | 2010-11-17 | 王敬 | Heat insulating cage and ingot casting furnace with same |
| CN102080259A (en) * | 2011-03-10 | 2011-06-01 | 无锡开日能源科技股份有限公司 | Three-stage thermal field of polysilicon ingot furnace |
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| CN102154685A (en) * | 2011-03-15 | 2011-08-17 | 杭州精功机电研究所有限公司 | Method for controlling crystal growth interface based on lifting and lowering of clapboard |
| CN102425006A (en) * | 2011-12-30 | 2012-04-25 | 常州天合光能有限公司 | Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method |
| CN102747412A (en) * | 2011-04-21 | 2012-10-24 | 江苏协鑫硅材料科技发展有限公司 | Device and application method for growing single-crystal silicon by directional solidification method |
| CN103243386A (en) * | 2013-05-23 | 2013-08-14 | 天津英利新能源有限公司 | Polysilicon ingot-casting furnace system |
| CN103757695A (en) * | 2013-12-25 | 2014-04-30 | 厦门大学 | Sidewall heat compensation device of polysilicon directional solidification device |
| CN104372403A (en) * | 2014-11-11 | 2015-02-25 | 华中科技大学 | Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block |
| CN105200516A (en) * | 2015-09-08 | 2015-12-30 | 浙江晟辉科技有限公司 | Polycrystalline silicon ingot casting process capable of enhancing inclusion removing effect |
| CN105970287A (en) * | 2016-05-23 | 2016-09-28 | 大工（青岛）新能源材料技术研究院有限公司 | Adjustable graphite crucible |
| CN107587194A (en) * | 2017-10-31 | 2018-01-16 | 河南省博宇新能源有限公司 | Polycrystal silicon ingot ingot furnace and method |
| CN111254291A (en) * | 2020-03-24 | 2020-06-09 | 山西中电科新能源技术有限公司 | Large copper ingot purification method and device |
| CN112047346A (en) * | 2020-09-10 | 2020-12-08 | 王丽 | High-purity polycrystalline silicon purification device for solar cell |
-
2009
- 2009-09-29 CN CN2009200495206U patent/CN201506708U/en not_active Expired - Fee Related
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101851782A (en) * | 2010-05-19 | 2010-10-06 | 绍兴县精功机电研究所有限公司 | Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace |
| CN101886291A (en) * | 2010-07-13 | 2010-11-17 | 王敬 | Heat insulating cage and ingot casting furnace with same |
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| CN102080259A (en) * | 2011-03-10 | 2011-06-01 | 无锡开日能源科技股份有限公司 | Three-stage thermal field of polysilicon ingot furnace |
| CN102080259B (en) * | 2011-03-10 | 2012-12-26 | 无锡开日能源科技股份有限公司 | Three-stage thermal field of polysilicon ingot furnace |
| CN102154685A (en) * | 2011-03-15 | 2011-08-17 | 杭州精功机电研究所有限公司 | Method for controlling crystal growth interface based on lifting and lowering of clapboard |
| CN102154685B (en) * | 2011-03-15 | 2012-08-15 | 杭州精功机电研究所有限公司 | Method for controlling crystal growth interface based on lifting and lowering of clapboard |
| CN102747412B (en) * | 2011-04-21 | 2015-11-25 | 江苏协鑫硅材料科技发展有限公司 | For device and the using method thereof of growing single-crystal silicon by directional solidification method |
| CN102747412A (en) * | 2011-04-21 | 2012-10-24 | 江苏协鑫硅材料科技发展有限公司 | Device and application method for growing single-crystal silicon by directional solidification method |
| CN102425006A (en) * | 2011-12-30 | 2012-04-25 | 常州天合光能有限公司 | Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method |
| CN103243386A (en) * | 2013-05-23 | 2013-08-14 | 天津英利新能源有限公司 | Polysilicon ingot-casting furnace system |
| CN103757695A (en) * | 2013-12-25 | 2014-04-30 | 厦门大学 | Sidewall heat compensation device of polysilicon directional solidification device |
| CN103757695B (en) * | 2013-12-25 | 2015-12-09 | 厦门大学 | A kind of sidewall heat compensation device of polysilicon directional freezing equipment |
| CN104372403A (en) * | 2014-11-11 | 2015-02-25 | 华中科技大学 | Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block |
| CN104372403B (en) * | 2014-11-11 | 2017-04-12 | 华中科技大学 | Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block |
| CN105200516A (en) * | 2015-09-08 | 2015-12-30 | 浙江晟辉科技有限公司 | Polycrystalline silicon ingot casting process capable of enhancing inclusion removing effect |
| CN105970287A (en) * | 2016-05-23 | 2016-09-28 | 大工（青岛）新能源材料技术研究院有限公司 | Adjustable graphite crucible |
| CN107587194A (en) * | 2017-10-31 | 2018-01-16 | 河南省博宇新能源有限公司 | Polycrystal silicon ingot ingot furnace and method |
| CN107587194B (en) * | 2017-10-31 | 2023-03-28 | 河南省博宇新能源有限公司 | Polycrystalline silicon ingot casting furnace and method |
| CN111254291A (en) * | 2020-03-24 | 2020-06-09 | 山西中电科新能源技术有限公司 | Large copper ingot purification method and device |
| CN112047346A (en) * | 2020-09-10 | 2020-12-08 | 王丽 | High-purity polycrystalline silicon purification device for solar cell |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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| CP03 | Change of name, title or address | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100616 Termination date: 20180929 |
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| CF01 | Termination of patent right due to non-payment of annual fee |