CN202989351U - Ingot furnace thermal field structure based on multiple heaters - Google Patents

Ingot furnace thermal field structure based on multiple heaters Download PDF

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Publication number
CN202989351U
CN202989351U CN 201220479990 CN201220479990U CN202989351U CN 202989351 U CN202989351 U CN 202989351U CN 201220479990 CN201220479990 CN 201220479990 CN 201220479990 U CN201220479990 U CN 201220479990U CN 202989351 U CN202989351 U CN 202989351U
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heater
thermal
heat
crucible
temperature
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石刚
叶欣
傅林坚
汤承伟
曹建伟
邱敏秀
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HANGZHOU HUIXIANG ELECTROHYDRAULIC TECHNOLOGY DEVELOPMENT Co Ltd
Zhejiang Jingsheng Mechanical and Electrical Co Ltd
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HANGZHOU HUIXIANG ELECTROHYDRAULIC TECHNOLOGY DEVELOPMENT Co Ltd
Zhejiang Jingsheng Mechanical and Electrical Co Ltd
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Abstract

The utility model relates to the technical field of polycrystalline silicon ingot furnace manufacturing, and provides an ingot furnace thermal field structure based on multiple heaters. The ingot furnace thermal field structure comprises a crucible arranged in a furnace chamber. A thermal field of the crucible comprises a top portion heater, a side portion heater, a heat exchanging table placed at the bottom of the crucible, and a bottom portion heater at the bottom of the heat exchanging table. An infrared thermometer is matched with the top portion heater and the side portion heater. An infrared thermometer or a thermocouple is matched with the bottom portion heater. According to the ingot furnace thermal field structure based on the multiple heaters, temperature of each part of the thermal field can be monitored, power output of each heater can be adjusted, reasonable temperature gradient can be established, the ingot furnace thermal field structure is adaptive to a trend of large feeding amount and casting of large-size ingots, early-stage crystal nucleus forming of long crystals is even, crystal particles are enlarged, crystal boundaries are reduced, crystal direction is improved, energy consumption is lowered, and finally quality of crystal ingots is improved.

Description

Ingot furnace thermal field structure based on many well heaters
Technical field
The utility model relates to the manufacturing technology field of polycrystalline silicon ingot or purifying furnace, is specifically related to a kind of thermal field structure of polycrystalline silicon casting furnace based on many well heaters, is applicable to make the high-quality polycrystal silicon ingot of large charging capacity large size.
Background technology
Polycrystalline silicon ingot or purifying furnace is a kind of silicon remelting device of specialty, for the production of qualified solar-grade polysilicon ingot casting.Ingot casting production is first satisfactory polycrystalline silicon raw material to be packed in stove, then according to technique initialization heat, melt, long crystalline substance, annealing, each step such as cooling, the process of polycrystal silicon ingot taking-up the most at last.
But there is a large amount of crystal boundaries in casting polycrystalline silicon inside, and clean crystal boundary is non-electroactive, minority carrier lifetime be there is no impact or only has minor impact, and the segregation of impurity or precipitation can change the electroactive of crystal boundary, can significantly reduce minority carrier lifetime, crystal boundary is more, affects larger.Therefore, than monocrystalline, the solar battery efficiency of polysilicon preparation is low, has affected its widespread use in the photovoltaic industry.
In polycrystalline furnace, the remelting of silicon raw material and long brilliant stable thermograde environment that needs, be referred to as thermal field usually.Common thermal field structure usually mainly consists of (as shown in Figure 1) by the grumeleuse etc. of helping of furnace chamber, heat-insulation cage body, top insulation board, top side well heater, crucible and backplate, pillar stiffener and lower thermal insulation layer and responsible oriented heat dissipating.Chinese utility model patent " follow-up heat insulation ring thermal field structure that is used for vertical oriented growth of polysilicon " (ZL 201010108876.X) has disclosed another kind of thermal field structure (as shown in Figure 2): comprise the crucible that is placed in furnace chamber, the thermal field of crucible comprises top heater, sidepiece well heater and is positioned at the heat exchange platform of crucible bottom, and wherein top heater and sidepiece well heater are fixed on electrode; Be provided with the heat-insulation cage body of side enclosed in described furnace chamber, described crucible and thermal field all are placed in the heat-insulation cage body, and the upper end of heat-insulation cage body is connected with lifting gear; The heat-insulation cage body arranges respectively top insulation board and lower thermal insulation layer up and down, wherein top insulation board fixedly hangs on electrode, lower thermal insulation layer and described heat exchange platform all are fixed on pillar stiffener, and top insulation board and heat-insulation cage body movable upper end join, lower thermal insulation layer and the lower end activity of heat-insulation cage body are joined; The follow-up heat insulation ring of an annular is fixed on the inside of heat-insulation cage body by several coupling devices.
The operational process of above-mentioned two kinds of thermal field structures is substantially similar: the fusion stage, heat-insulation cage is closed, and is made of the chamber of a sealing heat-insulation cage body, top insulation board and lower thermal insulation layer, and the silicon material is melted in well heater work; In the long brilliant stage, heat-insulation cage is opened, and helps grumeleuse to be responsible for heat radiation by orientation, and crucible bottom has produced cold zone, begins to carry out the crystallisation process of silicon liquid.
Conventional polycrystalline ingot furnace generally only obtains the temperature of a specified point in thermal field, and according to this signal temperature, heater power is exported and carried out integral body control, and all the other points for measuring temperature only make reference use, do not participate in temperature control.Such mode of operation has determined the poor controllability of temperature in body of heater can not build rational thermograde, under the situation that faces large charging capacity and large size ingot casting, has unsurmountable defective.
The utility model content
The technical problems to be solved in the utility model is: overcome the deficiencies in the prior art, propose a kind of ingot furnace thermal field structure based on many well heaters.By this thermal field structure and temperature control system, can effectively monitor the temperature of thermal field each several part, adjust the power stage of each well heater, set up more reasonably thermograde, adapt to large charging capacity and large size ingot casting trend.Long brilliant initial stage nucleus is formed more even, increase crystal grain, reduce crystal boundary, improve the crystal orientation, reduce energy consumption, finally improve the quality of crystal ingot.
Be the technical solution problem, the technical scheme that the utility model adopts is:
A kind of ingot furnace thermal field structure based on many well heaters is provided, has comprised the crucible that is placed in furnace chamber, the thermal field of crucible comprises top heater, sidepiece well heater and is positioned at the heat exchange platform of crucible bottom; Crucible and thermal field all are placed in the heat-insulation cage body, and top insulation board and heat-insulation cage body upper end join, bottom holding plates and the lower end activity of heat-insulation cage body are joined; This thermal field also comprises the bottom heater that is positioned at the heat exchange platform bottom, and described sidepiece well heater has two groups at least; Each well heater is equipped with independent controller, temperature measurer and transformer; Wherein, with top heater and sidepiece heater devices be infrared thermometer, what match with bottom heater is infrared thermometer or thermopair.
In the utility model, described temperature measurer is double color infrared temperature measuring instrument.
In the utility model, on the furnace chamber wall, the thermometric window of transparent glass is put in establishing, and described infrared thermometer is fixedly installed in thermometric window place; With each side temperature window accordingly, offer reserved opening on top insulation board, heat-insulation cage body or bottom holding plates.
In the utility model, the reserved opening of offering on top insulation board or bottom holding plates is circular hole, and its diameter is 5 ~ 50mm.
In the utility model, the reserved opening of offering on heat-insulation cage is U-shaped groove, and its width is 5 ~ 50mm, and length is 10 ~ 500mm.
In the utility model, the concrete operation method of ingot furnace thermal field structure is: the bottom at top, sidepiece and the heat exchange platform of crucible arranges respectively top heater, sidepiece well heater and bottom heater, and its operational process comprises:
(1) heating phase: complete according to processing requirement feed and vacuumize after, enable whole well heaters; Each well heater all requires to adopt power stage to control according to technique initialization, makes the interior temperature of stove rise to more than 1000 ℃ in 5 hours;
(2) the thawing stage: continue to heat up, after crucible top board temperature reaches 1500 ℃, the power stage of each well heater is controlled to change into adopt temperature output to control, regulate each heater power according to the temperature detection signal of crucible surface, make the temperature at each reference mark all meet the technique initialization requirement; After the solid state si material all is melted into liquid state, kept stable heated condition 0.5~1 hour; Then reduce the power of bottom heater until close, reduce simultaneously the power of top heater and sidepiece well heater, drop to the silicon ctystallizing point with the temperature that made crucible in 1 hour, for the crystal growth is prepared;
(3) the long brilliant stage: open heat-insulation cage body and body of heater water coolant and dispel the heat, regulate the power of top heater and sidepiece well heater according to the surface temperature of crucible top and sidepiece, the thermograde of controlling on vertical direction is guaranteed long brilliant speed at 1~15mm/hr, and makes long brilliant speed keep stable;
(4) annealing stage: close the heat-insulation cage body, and reactivate bottom heater, make the crucible bottom temperature rise to 1300 ℃ in 15 minutes;
(5) cooling stages: close bottom heater, and reopen isolation cage body, make silicon ingot slowly cool to 400 ℃ in 10~12 hours; Then body of heater is opened, taken out silicon ingot.
The beneficial effects of the utility model are:
By adjusting the power match of top side bottom heater, can be under large charging capacity (600 ~ 1000KG), solve due to the silicon ingot height increase after the problems such as vertically the long brilliant later stage speed in center that causes of gradient deficiency is slow, and the long brilliant time of corner is long.
By adjusting the power match of top side bottom heater, can be at G6(1000*1000mm) under large size ingot casting demand, solve the brilliant velocity contrast of the excessive length that causes of Transverse Temperature Gradient excessive, long crystal boundary face excess convexity, the series of problems such as crackle of the insufficient appearance of annealing.
By adjusting the power match of top side bottom heater, can be in the temperature of melting stage control bottom heat radiation piece, assurance bottom silicon material can conveniently be realized the infusible purpose of seed crystal lower than fusing point, realizes the class single crystal growing.
By adjusting the power match of top side bottom heater, can adjust easily flexibly the thermograde in heat-insulation cage, can obtain the uniform thermal field environment of temperature, thereby effectively control the carrying out of long brilliant process, make long crystal boundary face level more, effectively improve the polysilicon crystal orientation, increase crystal grain, reduce crystal boundary, thereby improve the polycrystal silicon ingot quality.
Description of drawings
The conventional polycrystalline furnace thermal field structure of Fig. 1;
The another kind of polycrystalline furnace thermal field structure of Fig. 2;
Many well heaters of Fig. 3 thermal field structure.
Reference numeral in figure is: one of two, 12 sidepiece temperature measurers of two, 6 bottom heaters of one of 1 body of heater, 2 top insulation boards, 3 top heater, 4 sidepiece well heaters, 5 sidepiece well heaters, 7 bottom holding plates, 8 pillar stiffeners, 9 bottom temperature measurers, 10 quartz crucibles, 11 sidepiece temperature measurers, 13 crucible side plates, 14 crucible top boards, 15 top temperature measurement instrument.
Embodiment
The utility model is described in more detail below in conjunction with accompanying drawing and preferred embodiment.These accompanying drawings are the schematic diagram of simplification, and only the mode with signal illustrates basic structure of the present utility model, therefore only show the formation relevant to the present embodiment.
It is a kind of thermal field structure of many well heaters as Fig. 3, comprise the heat-insulation cage body that is placed in body of heater 1, the top insulation board 2 on heat-insulation cage body top, the top heater 3 of top insulation board bottom, 25 of one of sidepiece well heater 4 and sidepiece well heater is positioned at heat-insulation cage body surrounding; In addition, also comprise the lower thermal insulation layer 7 and the heat exchange platform that are placed on pillar stiffener 8, be positioned at the bottom heater 6 of heat exchange platform below, be positioned over quartz crucible 10 and plumbago crucible side plate 13 and crucible top board 14 on heat exchange platform, and the parts such as 2 11 and top temperature measurement instrument 15 that are mounted on one of body of heater upper bottom portion temperature measurer 9, sidepiece temperature measurer 12, sidepiece temperature measurer.
Concrete running example:
Polycrystalline silicon ingot or purifying furnace is a kind of silicon remelting device, (600 ~ 700KG) pack in stove realize to need to reach the polysilicon that certain purity requires, and at first need to vacuumize operation by processing requirement, carry out the whole leak detection operation of body of heater after reaching the certain vacuum degree, leakage rate meets the demands and proceeds heating process.At this moment, bottom the top side, institute's having heaters is started working.Due to this moment temperature relatively low, there is larger error in infrared measurement of temperature instrument thermometric, therefore each well heater of heating phase all adopts power to control, carry out power stage according to technique initialization, owing to having adopted six Omnidirectional heatings at the bottom of the top side, power stage is larger, and the interior temperature of stove is risen to more than 1000 ℃.After top temperature measurement instrument temperature reaches 1500 ℃, enter the thawing operation, the power stage of well heater adopts temperature to control, and regulates heater power by the variation of temperature measurer detected temperatures, makes in stove that at the bottom of the top side, the temperature of each position all meets technique initialization.Continue after more than ten hours, the solid state si material all to be melted into liquid state, and stablize about 1 hour, by high temperature, the impurity in silicon material and thermal field is evaporated, fully impurity is discharged.Then, near the time about 1 hour drops to temperature the silicon ctystallizing point, prepare for the crystal growth, each heater power descends, and especially bottom heater 6 reduces gradually until close.
The long brilliant stage need to be opened the heat-insulation cage body, and the heat radiation of radiating block to the furnace wall, and is taken away by the water coolant in body of heater, and this moment, at first bottom temp reduced, and formed thermograde from bottom to top.Due to temperature that can direct-detection crucible sidepiece backplate, and can control thermograde on vertical direction according to the power of this temperature regulation top side portion well heater, make long brilliant speed more stable.Under common ingot casting thermal field condition, in the long brilliant later stage, in silicon liquid, liquid reduces and solid further increases, and the radiating efficiency variation is subject to the impact of sidepiece well heater, and long crystal boundary face easily forms the phenomenon of excess convexity, needs to strengthen surrounding and dispels the heat.Adopt thermal field structure of the present utility model, can adjust flexibly the power match between the sidepiece well heater, vertical thermograde is further strengthened, reduce surrounding power, improve the deviation of horizontal temperature in thermal field, reduce the phenomenon of interface excess convexity, improve the crystal orientation verticality.
After long crystalline substance is completed, need to carry out annealing process, the purpose of annealing is that the temperature of whole silicon ingot is reached unanimously, eliminates the thermal stresses of bringing due to temperature deviation.Therefore, close the heat-insulation cage body and make the integral body that forms sealing in the heat-insulation cage body, and will grow the bottom heater 6 that the brilliant stage closes and reopen, make the silicon ingot bottom temp rapidly increase to 1300 ℃.Due to the cause of six heating at the bottom of the top side, anneal quicker, nearly one hour of time shorten.Then, proceed process for cooling, reopen isolation cage body after bottom heater 6 is closed, make silicon ingot slowly cool to 400 ℃ of left and right in 10 ~ 12 hours, then body of heater is opened, take out silicon ingot.
Adopt this thermal field structure, under the ingot casting condition that feeds intake greatly, the silicon ingot height is under the application scenario of 380 ~ 420mm, by adjusting the power match of top side well heater, but vertical temperature gradient is larger more even, accelerates long brilliant speed of later stage, shorten the long brilliant time of corner, make long crystal boundary face level more.

Claims (5)

1. the ingot furnace thermal field structure based on many well heaters, comprise the crucible that is placed in furnace chamber, and the thermal field of crucible comprises top heater, sidepiece well heater and is positioned at the heat exchange platform of crucible bottom; Crucible and thermal field all are placed in the heat-insulation cage body, and top insulation board and heat-insulation cage body upper end join, bottom holding plates and the lower end activity of heat-insulation cage body are joined; It is characterized in that, this thermal field also comprises the bottom heater that is positioned at the heat exchange platform bottom, and described sidepiece well heater has two groups at least; Each well heater is equipped with independent controller, temperature measurer and transformer; Wherein, with top heater and sidepiece heater devices be infrared thermometer, what match with bottom heater is infrared thermometer or thermopair.
2. ingot furnace thermal field structure according to claim 1, is characterized in that, described temperature measurer is double color infrared temperature measuring instrument.
3. ingot furnace thermal field structure according to claim 1, is characterized in that, on the furnace chamber wall, the thermometric window of transparent glass is put in establishing, and described infrared thermometer is fixedly installed in thermometric window place; With each side temperature window accordingly, offer reserved opening on top insulation board, heat-insulation cage body or bottom holding plates.
4. ingot furnace thermal field structure according to claim 3, is characterized in that, the reserved opening of offering on top insulation board or bottom holding plates is circular hole, and its diameter is 5 ~ 50mm.
5. ingot furnace thermal field structure according to claim 3, is characterized in that, the reserved opening of offering on heat-insulation cage is U-shaped groove, and its width is 5 ~ 50mm, and length is 10 ~ 500mm.
CN 201220479990 2012-09-19 2012-09-19 Ingot furnace thermal field structure based on multiple heaters Active CN202989351U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102877117A (en) * 2012-09-19 2013-01-16 杭州慧翔电液技术开发有限公司 Ingot furnace thermal field structure based on multi-heater and operation method
CN103343387A (en) * 2013-07-17 2013-10-09 英利能源(中国)有限公司 Polycrystalline silicon ingotting furnace and ingotting method thereof
CN103981569A (en) * 2014-04-30 2014-08-13 上饶光电高科技有限公司 Method for solving crystal-growing shadow defect of casted crystalline silicon
WO2018192181A1 (en) * 2017-04-17 2018-10-25 涿州新卓立航空精密科技有限公司 Fine grain casting furnace employing static magnetic field to realize deep supercooling and high mold filling and usage method thereof
CN110257907A (en) * 2019-08-01 2019-09-20 晶科能源有限公司 A kind of polycrystalline ingot furnace of layered temperature control

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102877117A (en) * 2012-09-19 2013-01-16 杭州慧翔电液技术开发有限公司 Ingot furnace thermal field structure based on multi-heater and operation method
CN103343387A (en) * 2013-07-17 2013-10-09 英利能源(中国)有限公司 Polycrystalline silicon ingotting furnace and ingotting method thereof
CN103343387B (en) * 2013-07-17 2016-03-30 英利能源(中国)有限公司 A kind of polycrystalline silicon ingot or purifying furnace and casting ingot method thereof
CN103981569A (en) * 2014-04-30 2014-08-13 上饶光电高科技有限公司 Method for solving crystal-growing shadow defect of casted crystalline silicon
CN103981569B (en) * 2014-04-30 2017-08-18 上饶光电高科技有限公司 A kind of method for solving the brilliant shade defect of casting crystalline silicon length
WO2018192181A1 (en) * 2017-04-17 2018-10-25 涿州新卓立航空精密科技有限公司 Fine grain casting furnace employing static magnetic field to realize deep supercooling and high mold filling and usage method thereof
CN110257907A (en) * 2019-08-01 2019-09-20 晶科能源有限公司 A kind of polycrystalline ingot furnace of layered temperature control

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