CN203393257U - Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot - Google Patents
Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot Download PDFInfo
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- CN203393257U CN203393257U CN201320501569.7U CN201320501569U CN203393257U CN 203393257 U CN203393257 U CN 203393257U CN 201320501569 U CN201320501569 U CN 201320501569U CN 203393257 U CN203393257 U CN 203393257U
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Abstract
The utility model discloses an ingot furnace with a plurality of heat-conduction bottom plates for producing an efficient polycrystalline silicon ingot. The ingot furnace comprises a furnace body (1), a heat-insulation cage body (2) arranged in the furnace body (1) and a quartz crucible (4) arranged inside the heat-insulation cage body (2), wherein a bottom plate (6) is attached to the bottom face of the quartz crucible (4); the bottom plate (6) mainly comprises at least two plate bodies with different heat conductivity coefficients; the plate body with the small heat conductivity coefficient is embedded into the plate body with the great heat conductivity coefficient. By adopting the technical scheme provided by the utility model, the ingot furnace has the beneficial effects that the distribution of a temperature field inside the ingot casting furnace can be controlled effectively by changing heat supplying capabilities of the upper and lower parts of a side heater and the heat conductivity capabilities of all parts of protective plates at the periphery of the crucible, a bottom plate and a DS heat dissipation block, the upward convex phenomenon of a center of a fusion and crystal growing boundary is improved and a solid-liquid boundary tends to be flat, so as to be beneficial to discharging of impurities in a crystal growing process; therefore, the efficient polycrystalline silicon ingot with less impurity content and relatively-uniform crystal particles is produced.
Description
Technical field
The utility model relates to polycrystal silicon ingot ingot casting technology, is specifically a kind ofly heated evenly, the uniformly efficient polycrystal silicon ingot ingot furnace of molten silicon.
Background technology
As everyone knows, the energy is the lifeblood of national economy, is the matter of utmost importance that many countries formulate global strategy.Yet today,
Energy shortage and environmental problem have become the theme of global energy problem.How effective exploitation utilizes the renewable energy source of cleanliness without any pollution just to become the mankind's an extremely urgent thing.Sun power is it green energy resource without cease of inexhaustible use, in the utilization of sun power, opto-electronic conversion is most widely used, and photovoltaic cell is topmost a kind of product in the market, it usings polysilicon as base material, therefore the preparation of silicon crystal is the basis of photovoltaic cell.
Polycrystalline silicon ingot or purifying furnace is a kind of silicon raw material remelting recrystallize equipment, for the production of solar-grade polysilicon ingot.In actual production, through heat fused, directional long crystal, annealing, the step such as cooling, polycrystalline silicon raw material is prepared into the polycrystal silicon ingot of growth in a certain direction.Silicon raw material remelting recrystallization process is to carry out in the thermal field of polycrystalline silicon ingot or purifying furnace, and it is comprised of component such as heat-insulation cage assembly, graphite heater, DS radiating blocks.Thermal field not only provides required heat energy for unmelted polycrystalline silicon, in long brilliant process, provides again a temperature gradient field, thereby forms directional freeze.The production of high-quality polycrystal silicon ingot, can key be just accurately control the thermograde in thermal field, forms a desirable solid-liquid interface condition.
Yet there is larger defect in existing polysilicon ingot furnace thermal field design, is difficult to obtain rational temperature distribution, is difficult to make solid-liquid interface to reach perfect condition, thereby affected the quality of polycrystal silicon ingot.
The technical scheme of prior art: the inner thermal field of existing polycrystalline silicon ingot or purifying furnace is comprised of component such as heat-insulation cage assembly, graphite heater, DS radiating blocks mostly, and in actual production process, in stove, temperature forms by these component actings in conjunction.At present, produce graphite heater overall width used identical with thickness, thereby each position has identical heat capacity; Crucible guard boards is identical with the capacity of heat transmission that base plate is isostatic pressing formed graphite Ban，Ge position; And used DS radiating block is step-like, top surrounding is all vacated a part, and during ingot casting, vacancy partly uses the heat-insulation and heat-preservation bar identical with step dimension to fill; By moving up and down heat-insulation cage body, reach the object of opening and closing heat-insulation cage body again, and then warm field distribution in regulating stove, realize efficient polycrystalline cast ingot process.
The shortcoming of prior art: the inner thermal field design of existing polycrystalline silicon ingot or purifying furnace, because each position heat capacity of graphite heater is identical, crucible guard boards is identical with the capacity of heat transmission at each position of base plate, and it is different with the capacity of heat transmission of heat preservation strip from the DS radiating block of base plate contact, heat preservation strip has the effect of heat-insulation and heat-preservation, in addition crucible surrounding all has with top the graphite heater heat supply that heat capacity is identical, thereby cause the temperature of crucible surrounding higher than crucible middle part, make temperature gradient distribution uneven, as shown in Figure 6, cause fusing interface and long crystal boundary face center to raise up, and center epirelief phenomenon is more and more obvious to bottom from crucible top, crystals impurity will segregation or precipitation, change the electroactive of crystal boundary, significantly reduce the life-span of minority carrier, affected greatly the quality of efficient polycrystal silicon ingot.
Utility model content
The purpose of this utility model is to provide a kind of many conductive sole plate efficient polycrystal silicon ingot ingot furnace, be intended to solve fusing and long brilliant stage solid-liquid interface center epirelief phenomenon in efficient polycrystal silicon ingot ingot casting process, make radial symmetry gradient trend towards zero, promote the quality of efficient polycrystal silicon ingot.
The purpose of this utility model is achieved through the following technical solutions: the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate, comprise body of heater, be arranged on heat-insulation cage body in body of heater, be arranged on the quartz crucible in heat-insulation cage body, quartz crucible bottom surface is pasted with base plate, base plate mainly consists of the plate body of at least 2 kinds of different thermal conductivitys, and it is inner that the plate body that thermal conductivity is little is nested in the plate body that thermal conductivity is large.
Principle of design of the present utility model is: because the heat-sinking capability in each region of original base plate is identical, therefore in the situation that each position heat capacity of well heater is identical, quartz crucible surrounding all has with top the graphite heater heat supply that heat capacity is identical, thereby cause the temperature of crucible surrounding higher than quartz crucible middle part quartz crucible, make temperature gradient distribution uneven.In order to address this problem, the utility model adopts the plate body of at least 2 kinds of different thermal conductivitys to form base plate, the mode that adopts the little plate body of thermal conductivity to be nested in the plate body inside that thermal conductivity is large forms can be at the different base plate of different zones heat conduction amount, when the base plate after above-mentioned improvement is placed on behind quartz crucible bottom surface, because the little plate body of thermal conductivity is nested in the plate body inside that thermal conductivity is large, therefore the radiating efficiency in quartz crucible bottom center region is low, and the large plate body of the corresponding thermal conductivity in quartz crucible peripheral region, therefore the radiating efficiency of quartz crucible peripheral region is high, make like this quartz crucible peripheral region and burn-off rate decline, the burn-off rate that guarantees quartz crucible central zone increases, can make thus speed all the reaching unanimity in any one some position of the solid state si material fusing of quartz crucible inside.To reach the uniform object of temperature gradient distribution.
Preferably, base plate mainly consists of the plate body of 3 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, the thermal conductivity < plate body C thermal conductivity of the thermal conductivity < plate body B of plate body A, plate body A is nested in plate body B, and plate body B is nested in plate body C.Can also be preferred, base plate mainly consists of the plate body of 4 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, plate body D, the thermal conductivity < plate body C thermal conductivity < plate body D thermal conductivity of the thermal conductivity < plate body B of plate body A, plate body A is nested in plate body B, plate body B is nested in plate body C, and plate body C is nested in plate body D.
Base plate can be considered as the minimum plate body of thermal conductivity and peripheral stacked plate body forms, the plate body of thermal conductivity minimum is positioned at the central zone of whole base plate, along the surrounding of the plate body of the thermal conductivity minimum plate body ring that several thermal conductivitys increase successively that is cascading, except the plate body of thermal conductivity minimum, remaining plate body is ring-plane structure.Peripheral stacked plate body can be straight-flanked ring, can be also circular rings, depending on quartz crucible bottom shape.
Preferably, the plate body central point of thermal conductivity minimum aligns with quartz crucible bottom center's point.There is the inhomogeneous phenomenon of being heated in one side.
Also comprise and be arranged on quartz crucible peripheric surface to the side heater between heat-insulation cage tagma.
In addition, except above-mentioned solution, the resistance of side heater of the present utility model progressively reduces from top to bottom.Have heating source is improved, make the heat capacity of side heater bottom be less than the heat capacity on top, the heat that is radiated crucible surrounding also just gradually reduces from top to bottom, thereby alleviates above-mentioned phenomenon.
In addition, except above-mentioned solution, the resistance width of side heater points in base plate direction at quartz crucible top, and width increases gradually from top to bottom, thereby causes the resistance of side heater progressively to reduce from top to bottom.Make the heat capacity of side heater bottom be less than the heat capacity on top, the heat that is radiated crucible surrounding also just gradually reduces from top to bottom, thereby alleviates above-mentioned phenomenon.
Quartz crucible peripheric surface is pasted with backplate.
Backplate is connected with base plate by insulating panels near base plate one end.Because the backplate of quartz crucible external application is connected with base plate by insulating panels near base plate one end, therefore the thermal conductivity of quartz crucible bottom is less, in the silicon material fusion stage, can reduce a part of heat and be transmitted to crucible, thereby dwindle crucible inner radial temperature head, the burn-off rate that reduces crucible surrounding silicon material, makes to melt interface and is tending towards smooth.
Base plate is connected with the DS radiating block of rectangle away from one end of quartz crucible.In addition, the utility model removes the heat-insulation and heat-preservation bar of DS radiating block top surrounding, by being originally step-like DS radiating block, be made into rectangular parallelepiped style or square style, the whole top of DS radiating block is all contacted with base plate, the part heat of crucible surrounding can pass by the heat conducting mode of DS radiating block, increase its heat dissipation capacity, reduce the temperature of crucible surrounding, the radial temperature difference of balance crucible inside.With structure of the present utility model, produce, thereby grow, foreign matter content is few, the relatively uniform styloid of crystal grain, promotes the quality of efficient polycrystal silicon ingot.
Directly over quartz crucible, be provided with top heater.
The beneficial effect that technical solutions of the utility model are brought is: by changing sidepiece well heater the heat deliverability at each position and the thermal conduction capability at crucible surrounding backplate, base plate and each position of DS radiating block up and down, can effectively control the warm field distribution of ingot furnace inside, improve fusing and long crystal boundary face center epirelief phenomenon, make solid-liquid interface be tending towards smooth, and be conducive to the discharge of impurity in long brilliant process, thereby output foreign matter content is few, the relatively uniform efficient polycrystal silicon ingot of crystal grain.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is prior art crucible bottom plate schematic top plan view;
The crucible bottom plate schematic top plan view that Fig. 3 provides for the utility model;
Fig. 4 is prior art DS radiating block schematic side view;
The DS radiating block schematic side view that Fig. 5 provides for the utility model;
Fig. 6 is prior art silicon material fusing interface schematic diagram;
Fig. 7 is silicon material fusing interface schematic diagram in the utility model structure.
Reference numeral in figure is expressed as: 1-body of heater, 2-heat-insulation cage body, 3-backplate, 4-quartz crucible, 5-silicon melt, 6-base plate, 7-DS radiating block, 8-top heater, 9-solid state si material, 10-side heater.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but embodiment of the present utility model is not limited to this.
Embodiment 1:
As shown in Figures 1 to 7.
The efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate, comprise body of heater 1, be arranged on heat-insulation cage body 2 in body of heater 1, be arranged on the quartz crucible 4 in heat-insulation cage body 2, quartz crucible 4 bottom surfaces are pasted with base plate 6, base plate 6 mainly consists of the plate body of at least 2 kinds of different thermal conductivitys, and it is inner that the plate body that thermal conductivity is little is nested in the plate body that thermal conductivity is large.
Principle of design of the present utility model is: because the heat-sinking capability in each region of original base plate is identical, therefore in the situation that each position heat capacity of well heater is identical, quartz crucible surrounding all has with top the graphite heater heat supply that heat capacity is identical, thereby cause the temperature of crucible surrounding higher than quartz crucible middle part quartz crucible, make temperature gradient distribution uneven.In order to address this problem, the utility model adopts the plate body of at least 2 kinds of different thermal conductivitys to form base plate 6, the mode that adopts the little plate body of thermal conductivity to be nested in the plate body inside that thermal conductivity is large forms can be at the different base plate of different zones heat conduction amount, when the base plate after above-mentioned improvement being placed on behind quartz crucible 4 bottom surfaces, because the little plate body of thermal conductivity is nested in the plate body inside that thermal conductivity is large, therefore the radiating efficiency in quartz crucible 4 bottom center regions is low, and the large plate body of the corresponding thermal conductivity in quartz crucible 4 peripheral regions, therefore the radiating efficiency of quartz crucible 4 peripheral regions is high, make like this quartz crucible 4 peripheral regions and burn-off rate decline, the burn-off rate that guarantees quartz crucible 4 central zones increases, can make thus speed all the reaching unanimity in any one some position of the solid state si material fusing of quartz crucible 4 inside.To reach the uniform object of temperature gradient distribution.
Embodiment 2:
As shown in Figures 1 to 7.
The difference of the present embodiment and embodiment 1 is, preferably, base plate 6 mainly consists of the plate body of 3 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, the thermal conductivity < plate body C thermal conductivity of the thermal conductivity < plate body B of plate body A, plate body A is nested in plate body B, and plate body B is nested in plate body C.Can also be preferred, base plate 6 mainly consists of the plate body of 4 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, plate body D, the thermal conductivity < plate body C thermal conductivity < plate body D thermal conductivity of the thermal conductivity < plate body B of plate body A, plate body A is nested in plate body B, plate body B is nested in plate body C, and plate body C is nested in plate body D.
Base plate 6 can be considered as the minimum plate body of thermal conductivity and peripheral stacked plate body forms, the plate body of thermal conductivity minimum is positioned at the central zone of whole base plate, along the surrounding of the plate body of the thermal conductivity minimum plate body ring that several thermal conductivitys increase successively that is cascading, except the plate body of thermal conductivity minimum, remaining plate body is ring-plane structure.Peripheral stacked plate body can be straight-flanked ring, can be also circular rings, depending on quartz crucible 4 bottom shapes.
Preferably, the plate body central point of thermal conductivity minimum aligns with quartz crucible 4 bottom center's points.There is the inhomogeneous phenomenon of being heated in one side.
Embodiment 3:
As shown in Figures 1 to 7.
The present embodiment, on the basis of embodiment 1, also comprises and is arranged on quartz crucible 4 peripheric surfaces to the side heater 10 in heat-insulation cage body 2 intervals.
In addition, except above-mentioned solution, the resistance of side heater 10 of the present utility model progressively reduces from top to bottom.Have heating source is improved, make the heat capacity of side heater bottom be less than the heat capacity on top, the heat that is radiated crucible surrounding also just gradually reduces from top to bottom, thereby alleviates above-mentioned phenomenon.
In addition, except above-mentioned solution, the resistance width of side heater 10 points in base plate direction at quartz crucible 4 tops, and width increases gradually from top to bottom, thereby causes the resistance of side heater 10 progressively to reduce from top to bottom.Make the heat capacity of side heater bottom be less than the heat capacity on top, the heat that is radiated crucible surrounding also just gradually reduces from top to bottom, thereby alleviates above-mentioned phenomenon.
Embodiment 4:
As shown in Figures 1 to 7.
The present embodiment is on the basis of embodiment 1 and embodiment 2, and quartz crucible 4 peripheric surfaces are pasted with backplate 3.
Backplate 3 is connected with base plate 6 by insulating panels near base plate 6 one end.Because the backplate of quartz crucible external application is connected with base plate 6 by insulating panels near base plate 6 one end, therefore the thermal conductivity of quartz crucible bottom is less, in the silicon material fusion stage, can reduce a part of heat and be transmitted to crucible, thereby dwindle crucible inner radial temperature head, the burn-off rate that reduces crucible surrounding silicon material, makes to melt interface and is tending towards smooth.
Embodiment 5:
As shown in Figures 1 to 7.
The present embodiment is on the basis of embodiment 1 and embodiment 2, and base plate 6 is connected with the DS radiating block 7 of rectangle away from one end of quartz crucible.In addition, the utility model removes the heat-insulation and heat-preservation bar of DS radiating block top surrounding, by being originally step-like DS radiating block, be made into rectangular parallelepiped style or square style, the whole top of DS radiating block is all contacted with base plate, the part heat of crucible surrounding can pass by the heat conducting mode of DS radiating block, increase its heat dissipation capacity, reduce the temperature of crucible surrounding, the radial temperature difference of balance crucible inside.
Embodiment 6:
As shown in Figures 1 to 7.
The present embodiment, on the basis of embodiment 1 and embodiment 2, is provided with top heater 8 directly over quartz crucible 4.
Embodiment 7:
As shown in Figures 1 to 7.
General design scheme of the present utility model is: comprise body of heater, heat-insulation cage body, backplate, quartz crucible, silicon melt 5, base plate, DS radiating block, top heater, solid state si material 9, side heater.When quartz crucible adopts existing thermal field structure to produce efficient polycrystal silicon ingot, due to top heater, each position of sidepiece well heater has identical heat capacity, crucible external application backplate and base plate also have the identical capacity of heat transmission, and it is different with the capacity of heat transmission of heat preservation strip from the DS radiating block of base plate contact, DS radiating block top external diameter arranges heat preservation strip, heat preservation strip has the effect of heat-insulation and heat-preservation, cause the temperature of crucible surrounding higher than middle part, in stove, radial symmetry gradient is larger, solid-liquid interface is wave, center is to upper process, and center epirelief phenomenon is more and more obvious to bottom from crucible top, as shown in Figure 6.So, there is stress in the crystallizing layer of quartz crucible bottom, is unfavorable for the growth of efficient polycrystal silicon ingot at the very start.And the designed thermal field structure of the utility model, backplate 3 connection insulating panels due to quartz crucible external application, thermal conductivity is less, in the silicon material fusion stage, can reduce a part of heat and be transmitted to crucible, thereby dwindle crucible inner radial temperature head, the burn-off rate that reduces crucible surrounding silicon material, makes to melt interface and is tending towards smooth.Crucible bottom plate 6 adopts respectively the different material of thermal conductivity to make from the center to the periphery simultaneously, as shown in Figure 3, thermal conductivity A district < B district < C district, center adopts the less material of thermal conductivity, the calorific loss at minimizing center, peripheral adopt the material that thermal conductivity is larger, strengthen the capacity of heat transmission of surrounding, thereby alleviate fusing center, interface epirelief phenomenon.In addition, the utility model removes the heat-insulation and heat-preservation bar of DS radiating block 7 top surroundings, by being originally step-like DS radiating block, be made into rectangular parallelepiped style, whole top is all contacted with crucible bottom plate, the part heat of crucible surrounding can pass by heat conducting mode, increase its heat dissipation capacity, reduce the temperature of crucible surrounding, the radial temperature difference of balance crucible inside.More and more obvious to bottom from crucible top for fusing center, interface epirelief phenomenon, the utility model is made into upper and lower width by sidepiece well heater 10, thickness is inconsistent pattern all, the resistance of well heater is progressively reduced from top to bottom, under same condition, the heat capacity of well heater bottom is less than the heat capacity on top, the heat that is radiated crucible surrounding also just gradually reduces from top to bottom, thereby alleviate above-mentioned phenomenon, make solid-liquid interface further be tending towards smooth, as shown in Figure 7, thereby it is few to grow foreign matter content, crystal grain is styloid relatively uniformly, promote the quality of efficient polycrystal silicon ingot.Above-mentioned quartz crucible is called for short crucible.
Above-mentioned for the improvement project of DS radiating block, the improvement project of the improvement project of base plate, side heater, the improvement project of backplate all can implement separately, when four schemes in conjunction with after best results.
As above can realize preferably the utility model.
Claims (10)
1. the efficient polycrystal silicon ingot ingot furnace of conductive sole plate more than a kind, comprise body of heater (1), be arranged on the interior heat-insulation cage body (2) of body of heater (1), be arranged on the quartz crucible (4) in heat-insulation cage body (2), it is characterized in that: quartz crucible (4) bottom surface is pasted with base plate (6), base plate (6) mainly consists of the plate body of at least 2 kinds of different thermal conductivitys, and it is inner that the plate body that thermal conductivity is little is nested in the plate body that thermal conductivity is large.
2. the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate according to claim 1, it is characterized in that: base plate (6) mainly consists of the plate body of 3 kinds of different thermal conductivitys, be respectively: plate body A, plate body B, plate body C, the thermal conductivity < plate body C thermal conductivity of the thermal conductivity < plate body B of plate body A, plate body A is nested in plate body B, and plate body B is nested in plate body C.
3. the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate according to claim 1, is characterized in that: the plate body central point of thermal conductivity minimum aligns with quartz crucible (4) bottom center's point.
4. according to the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate described in any one in claim 1-3, it is characterized in that: also comprise and be arranged on quartz crucible (4) peripheric surface to the interval side heater (10) of heat-insulation cage body (2).
5. the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate according to claim 4, is characterized in that: the resistance of side heater (10) progressively reduces from top to bottom.
6. the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate according to claim 4, is characterized in that: the resistance width of side heater (10) points in base plate direction at quartz crucible (4) top, and width increases gradually from top to bottom.
7. according to the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate described in any one in claim 1-3, it is characterized in that: quartz crucible (4) peripheric surface is pasted with backplate (3).
8. the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate according to claim 7, is characterized in that: backplate (3) is connected with base plate (6) by insulating panels near base plate (6) one end.
9. according to the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate described in any one in claim 1-3, it is characterized in that: base plate (6) is connected with the DS radiating block (7) of rectangle away from one end of quartz crucible.
10. according to the efficient polycrystal silicon ingot ingot furnace of a kind of many conductive sole plate described in any one in claim 1-3, it is characterized in that: directly over quartz crucible (4), be provided with top heater (8).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320501569.7U CN203393257U (en) | 2013-08-16 | 2013-08-16 | Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot |
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| CN201320501569.7U CN203393257U (en) | 2013-08-16 | 2013-08-16 | Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103397379A (en) * | 2013-08-16 | 2013-11-20 | 天威新能源控股有限公司 | High-efficiency polycrystalline silicon ingot casting furnace |
| CN106133207A (en) * | 2014-03-06 | 2016-11-16 | Ald 真空技术股份有限公司 | Mixing crucible for material crystalline |
| CN109056062A (en) * | 2018-08-03 | 2018-12-21 | 湖南红太阳光电科技有限公司 | A kind of preparation method of casting monocrystalline silicon |
| CN109097829A (en) * | 2018-08-03 | 2018-12-28 | 湖南红太阳光电科技有限公司 | The preparation method of casting monocrystalline silicon heat insulation bottom board, casting monocrystalline silicon growth apparatus and casting monocrystalline silicon |
| CN114645325A (en) * | 2022-04-04 | 2022-06-21 | 扬州晶樱光电科技有限公司 | Efficient polycrystalline ingot furnace for producing polycrystalline silicon ingots and production method thereof |
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2013
- 2013-08-16 CN CN201320501569.7U patent/CN203393257U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103397379A (en) * | 2013-08-16 | 2013-11-20 | 天威新能源控股有限公司 | High-efficiency polycrystalline silicon ingot casting furnace |
| CN106133207A (en) * | 2014-03-06 | 2016-11-16 | Ald 真空技术股份有限公司 | Mixing crucible for material crystalline |
| CN109056062A (en) * | 2018-08-03 | 2018-12-21 | 湖南红太阳光电科技有限公司 | A kind of preparation method of casting monocrystalline silicon |
| CN109097829A (en) * | 2018-08-03 | 2018-12-28 | 湖南红太阳光电科技有限公司 | The preparation method of casting monocrystalline silicon heat insulation bottom board, casting monocrystalline silicon growth apparatus and casting monocrystalline silicon |
| CN114645325A (en) * | 2022-04-04 | 2022-06-21 | 扬州晶樱光电科技有限公司 | Efficient polycrystalline ingot furnace for producing polycrystalline silicon ingots and production method thereof |
| CN114645325B (en) * | 2022-04-04 | 2023-03-14 | 扬州晶樱光电科技有限公司 | A high-efficient polycrystal ingot furnace for producing polycrystalline silicon ingot |
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Granted publication date: 20140115 Termination date: 20170816 |