CN201183847Y - Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip - Google Patents
Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip Download PDFInfo
- Publication number
- CN201183847Y CN201183847Y CNU2008200311000U CN200820031100U CN201183847Y CN 201183847 Y CN201183847 Y CN 201183847Y CN U2008200311000 U CNU2008200311000 U CN U2008200311000U CN 200820031100 U CN200820031100 U CN 200820031100U CN 201183847 Y CN201183847 Y CN 201183847Y
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- cage body
- heat preservation
- polycrystalline silicon
- layer
- thermal field
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Abstract
The utility model relates to a device in a polycrystalline silicon ingot furnace, in particular to a thermal field structure of a polycrystalline silicon ingot furnace with a layer of heat preservation bars. The thermal field structure comprises an insulated cage body, a heater installed at the side and the top surfaces in the insulated cage body, a graphite cooling block for placing a crucible, and a layer of heat preservation bars arranged around the cavity of the insulated cage body. The layer of heat preservation bars composes a heat reserving belt with the height h of 73-83mm and the width b of 77-87mm. Through experiments, compared with the three layers of heat preservation bars lapped up and down in the original insulated cage body, the solid-liquid interface for the growth of the crystal thereof is concave, the growth speed of the peripheral crystal is faster than that of the crystal in the middle, the crystallite content in the effective area is reduced, so that the crystallite amount produced in the crystal ingot decreases.
Description
Technical field
The utility model relates to the equipment in a kind of polycrystalline silicon ingot or purifying furnace, particularly a kind of thermal field structure with polycrystalline silicon ingot or purifying furnace of one deck insulation bar.
Background technology
Polysilicon is in the process of growth, because the instability of thermal field can produce crystallite at crystals, at DSS450 polycrystalline foundry furnace thermal field under the situation about not changing, content of crystallite in each crystal ingot of producing reaches 49.9%, and the good article rate of the finished product will reduce greatly like this.The crystalline direction of growth is from bottom to top, and the effect of insulation bar is to make the temperature around the crystal block can refrigerative too not fast, makes the crystal vertical-growth, prevents that crystal from not grow with regard to crystallization, thus the generation crystallite.The insulation bar of original DSS450 polysilicon foundry furnace is three, and with regard to crystallization, the crystalline solid-liquid interface is horizontal when growing into half for crystal like this, and this mode is an ideal least.
The utility model content
Too high for the crystallite ratio that overcomes the crystal ingot that existing polycrystalline silicon ingot or purifying furnace produces, influence the deficiency of quality product, the utility model provides a kind of thermal field structure of the polycrystalline silicon ingot or purifying furnace with one deck insulation bar of crystalline quality excellence.
The technical scheme that the utility model adopted is: a kind of thermal field structure with polycrystalline silicon ingot or purifying furnace of one deck insulation bar, comprise the well heater that is installed in side and end face in heat insulating cage body, the heat insulating cage body, place the graphite cooling block of crucible and be arranged on the insulation belt that stacks gradually around the heat insulating cage intracoelomic cavity, the high h of insulation belt is 73-83mm, wide b is 77-87mm, is made up of one deck insulation bar.
The insulation bar of three layers of stacked on top of one another is arranged in original heat insulating cage body, cut two-layer now.After cutting two-layer thermal insulation layer, the solid-liquid interface that its crystalline is grown up is rendered as matrix, makes that the crystallite amount in the crystal ingot of producing descends.
The beneficial effects of the utility model are: by test, compare with three layers of insulation bar that stacked on top of one another is set in the original heat insulating cage body, the solid-liquid interface that its crystalline is grown up is rendered as matrix, crystalline growth rate on every side is faster than the intermediary crystallization, content of crystallite in the effective area reduces, and makes that the crystallite amount in the crystal ingot of producing descends.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is a structural representation of the present utility model.
Among the figure: 1. heat insulating cage body, 2. well heater, 3. graphite cooling block, 4. insulation bar.
Embodiment
A kind of thermal field structure as shown in Figure 1 with polycrystalline silicon ingot or purifying furnace of one deck insulation bar, comprise the well heater 2 that is installed in side and end face in heat insulating cage body 1, the heat insulating cage body 1, the graphite cooling block 3 of placing crucible, one deck insulation bar 4 is set around the inner chamber of heat insulating cage body 1, it is 73-83mm that this layer insulation bar 4 is formed high h, and wide b is the insulation belt of 77-87mm.
In the DSS450 polycrystalline silicon ingot or purifying furnace, the insulation bar 4 in the heat insulating cage body 1 had three layers originally, cut top two-layer now.The silicon raw material is joined in the crucible, and crucible is put and is placed on the graphite cooling block 3, crucible bottom and be lined with backplate all around, and the top has cover plate, and when dissolving silicon materials, heat insulating cage body 1 and graphite cooling block 3 close up the thermal field chamber that forms silicon raw material in the heating crucible.Silicon liquid cooling after dissolving is but during crystallization, insulation bar 4 in the heat insulating cage body 1 makes the crystal growth around the silicon liquid be slower than the intermediary crystallization, crystal is the spill growth, the content of crystallite reduces in the effective area, and the content that makes the crystallite in the crystal ingot that draws is for dropping to 6.2% from present 49.9%.
Claims (2)
1, a kind of thermal field structure with polycrystalline silicon ingot or purifying furnace of one deck insulation bar, comprise the well heater (2) that is installed in side and end face in heat insulating cage body (1), the heat insulating cage body (1), place the graphite cooling block (3) of crucible and be arranged on the insulation belt that stacks gradually around heat insulating cage body (1) inner chamber, it is characterized in that: the high h of the insulation belt that is provided with around the inner chamber of described heat insulating cage body (1) is 73-83mm, and wide b is 77-87mm.
2, the thermal field structure with polycrystalline silicon ingot or purifying furnace of one deck insulation bar according to claim 1, it is characterized in that: described insulation belt is incubated bar (4) by one deck and forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200311000U CN201183847Y (en) | 2008-01-28 | 2008-01-28 | Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200311000U CN201183847Y (en) | 2008-01-28 | 2008-01-28 | Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201183847Y true CN201183847Y (en) | 2009-01-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200311000U Expired - Fee Related CN201183847Y (en) | 2008-01-28 | 2008-01-28 | Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201183847Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102031556A (en) * | 2010-12-31 | 2011-04-27 | 常州天合光能有限公司 | Growing process of polycrystalline cast ingot crystals |
| CN102758254A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heating system for single crystal furnace |
| CN105200516A (en) * | 2015-09-08 | 2015-12-30 | 浙江晟辉科技有限公司 | Polycrystalline silicon ingot casting process capable of enhancing inclusion removing effect |
-
2008
- 2008-01-28 CN CNU2008200311000U patent/CN201183847Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102031556A (en) * | 2010-12-31 | 2011-04-27 | 常州天合光能有限公司 | Growing process of polycrystalline cast ingot crystals |
| CN102031556B (en) * | 2010-12-31 | 2012-05-02 | 常州天合光能有限公司 | Growing process of polycrystalline cast ingot crystals |
| CN102758254A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Heating system for single crystal furnace |
| CN105200516A (en) * | 2015-09-08 | 2015-12-30 | 浙江晟辉科技有限公司 | Polycrystalline silicon ingot casting process capable of enhancing inclusion removing effect |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090121 Termination date: 20130128 |