CN102094238A - Method for reducing internal stress defect of ingot polycrystal - Google Patents

Method for reducing internal stress defect of ingot polycrystal Download PDF

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Publication number
CN102094238A
CN102094238A CN 201010294194 CN201010294194A CN102094238A CN 102094238 A CN102094238 A CN 102094238A CN 201010294194 CN201010294194 CN 201010294194 CN 201010294194 A CN201010294194 A CN 201010294194A CN 102094238 A CN102094238 A CN 102094238A
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CN
China
Prior art keywords
ingot casting
polycrystal
internal stress
polycrystalline
ingot
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Pending
Application number
CN 201010294194
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Chinese (zh)
Inventor
张志强
黄强
黄振飞
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Changzhou Trina Solar Energy Co Ltd
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Changzhou Trina Solar Energy Co Ltd
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Publication date
Application filed by Changzhou Trina Solar Energy Co Ltd filed Critical Changzhou Trina Solar Energy Co Ltd
Priority to CN 201010294194 priority Critical patent/CN102094238A/en
Priority to PCT/CN2010/078511 priority patent/WO2012040951A1/en
Publication of CN102094238A publication Critical patent/CN102094238A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Abstract

The invention relates to the technical field of production of semiconductor silicon polycrystal ingots, in particular to a method for reducing internal stress defect of ingot polycrystal. The method for reducing the internal stress defect of ingot polycrystal adopts a cooling mode that the polycrystal ingot is cooled from the upper part. The method for reducing the internal stress defect of ingot polycrystal improves the cooling process of the ingot polycrystal, enables stress in the crystallization process to be effectively released, reduces crystal defects such as slip dislocation and the like in the crystal, improves the conversion efficiency of a battery and improves the yield of a silicon chip producing process.

Description

Reduce the method for ingot casting polycrystal internal stress defective
Technical field
The present invention relates to the technical field that semiconductor silicon polycrystalline ingot casting is produced, especially a kind of method that reduces ingot casting polycrystal internal stress defective.
Background technology
In the photovoltaic field, utilizing the method production polycrystal silicon ingot of directional freeze is the method that generally adopts, and its ultimate principle is: polycrystalline silicon raw material is placed in the quartz ceramic crucible, is placed in the specific thermal field system, be heated to fully and melt; Bottom from crucible begins to cool down then, and silicon solution begins crystallization in crucible bottom, gradually upwards growth (solidifying); After finishing process of growth, usually can thermal field is closed again, and begin to cool down after with one section of polycrystalline ingot casting insulation the time.Traditional type of cooling is; begin to cool down from the bottom space of polycrystalline ingot casting; like this; the type of cooling as long brilliant process; its drawback is: since crystal ingot (hexahedron) around and totally five and quartz crucible and protection plumbago crucible contact in the bottom; form the thermal insulation layer of a U type; thereby in the crystal ingot body, form the thermograde of center epirelief; consistent with the temperature gradient distribution rule that in crystal, forms in the long brilliant process; thereby be unfavorable for the release of thermal stresses in the crystallisation process; in crystal, produce lattice defects such as slippage fault, utilize the conversion efficiency of solar cell of its making also can be affected.
Summary of the invention
The technical problem to be solved in the present invention is: in order to overcome the deficiency in the prior art, provide a kind of method that reduces ingot casting polycrystal internal stress defective.
The technical solution adopted for the present invention to solve the technical problems is: a kind of method that reduces ingot casting polycrystal internal stress defective, the type of cooling that its method that reduces ingot casting polycrystal internal stress defective is taked is for to begin to cool down from the top of polycrystalline ingot casting.
The described type of cooling has formed temperature ladder protruding under the center and has distributed in crystal.
Reduce the method for ingot casting polycrystal internal stress defective, its method steps is: described polycrystalline silicon raw material is put into quartz ceramic crucible, the polycrystalline ingot casting after finishing long brilliant process seals thermal field; Carry out anneal after the crystal heating; After the anneal, the top cover of polycrystalline ingot casting thermal field is opened, made the upper surface of polycrystalline ingot casting and the chamber wall generation radiation heat transfer of quartz ceramic crucible; Reduce the temperature of the outer chamber wall of quartz ceramic crucible, adopt water-cooled mode, because the temperature of chamber wall is lower than the temperature of polycrystalline ingot casting, the polycrystalline ingot casting discharges heat gradually to the chamber wall, form mainly make progress, less important to around the Overlay of heat radiation.
The invention has the beneficial effects as follows: the present invention has improved ingot casting polycrystalline process of cooling, the thermograde that makes process of cooling form in crystal is opposite with the intravital temperature gradient distribution mode of crystal in the long brilliant process, make the stress of crystallisation process be able to effective release, reduce lattice defects such as the interior slip dislocation of crystal, thereby improve the transformation efficiency of battery, reduce the ratio that crystal ingot is cut into warpage in the silicon chip process, latent sliver etc., improve the yield rate of silicon chip processing procedure.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is ingot casting polycrystalline process of cooling keeping warm mode figure of the present invention.
Embodiment
The present invention is further illustrated with preferred embodiment in conjunction with the accompanying drawings now.These accompanying drawings are the synoptic diagram of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
A kind of method that reduces ingot casting polycrystal internal stress defective as shown in Figure 1, its method is: polycrystalline silicon raw material is put into quartz ceramic crucible, and the polycrystalline ingot casting after finishing long brilliant process seals thermal field; Crystal is heated to certain temperature and carries out anneal; After the anneal, the top cover of polycrystalline ingot casting thermal field is opened, made the upper surface of polycrystalline ingot casting and the chamber wall generation radiation heat transfer of quartz ceramic crucible; The outer chamber wall of quartz ceramic crucible reduces temperature and adopts water-cooled mode; because the temperature of chamber wall is lower than the temperature of polycrystalline ingot casting; the polycrystalline ingot casting discharges heat gradually to the chamber wall; because protective layers such as crucible are arranged around the ingot casting; played insulation effect to a certain extent; polycrystalline ingot is less to specific heat load all around; with upwards main; less important to the Overlay that dispels the heat all around; having formed temperature ladder protruding under the center in crystal distributes; the thermal stresses direction that produces upwards; the thermal stresses direction that forms with long brilliant process is opposite, makes that the thermal stresses that is formed at long brilliant process is eliminated, and has avoided in the crystal because the lattice defects such as fault that thermal stresses produces.
The foregoing description only is explanation technical conceive of the present invention and characteristics; its purpose is to allow the personage that is familiar with this technology can understand content of the present invention and is implemented; can not limit protection scope of the present invention with this; all equivalences that spirit is done according to the present invention change or modify, and all should be encompassed in protection scope of the present invention.

Claims (3)

1. method that reduces ingot casting polycrystal internal stress defective is characterized in that: the type of cooling that its method that reduces ingot casting polycrystal internal stress defective is taked is for to begin to cool down from the top of polycrystalline ingot casting.
2. the method for reduction ingot casting polycrystal internal stress defective according to claim 1 is characterized in that: the described type of cooling has formed temperature ladder protruding under the center and has distributed in crystal.
3. the method for reduction ingot casting polycrystal internal stress defective according to claim 1, its method steps is: described polycrystalline silicon raw material is put into quartz ceramic crucible, the polycrystalline ingot casting after finishing long brilliant process seals thermal field; Carry out anneal after the crystal heating; After the anneal, the top cover of polycrystalline ingot casting thermal field is opened, made the upper surface and the outer chamber wall generation radiation heat transfer of quartz ceramic crucible of polycrystalline ingot casting; Reduce the temperature of the chamber wall of quartz ceramic crucible, adopt water-cooled mode, because the temperature of chamber wall is lower than the temperature of polycrystalline ingot casting, the polycrystalline ingot casting discharges heat gradually to the chamber wall, form mainly make progress, less important to around the Overlay of heat radiation.
CN 201010294194 2010-09-28 2010-09-28 Method for reducing internal stress defect of ingot polycrystal Pending CN102094238A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN 201010294194 CN102094238A (en) 2010-09-28 2010-09-28 Method for reducing internal stress defect of ingot polycrystal
PCT/CN2010/078511 WO2012040951A1 (en) 2010-09-28 2010-11-08 Method for reducing stress defects of polycrystal cast ingot

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201010294194 CN102094238A (en) 2010-09-28 2010-09-28 Method for reducing internal stress defect of ingot polycrystal

Publications (1)

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CN102094238A true CN102094238A (en) 2011-06-15

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CN (1) CN102094238A (en)
WO (1) WO2012040951A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102925971A (en) * 2012-11-29 2013-02-13 常州亿晶光电科技有限公司 High-efficiency polycrystal ingot casting thermal field
CN104502166A (en) * 2014-12-15 2015-04-08 首钢总公司 Method of preparing sample wafer capable of representing grain sliding of steel and iron materials
CN109825877A (en) * 2012-03-22 2019-05-31 三菱综合材料株式会社 The manufacturing method of polycrystal silicon ingot and polycrystal silicon ingot

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Publication number Priority date Publication date Assignee Title
CN109825877A (en) * 2012-03-22 2019-05-31 三菱综合材料株式会社 The manufacturing method of polycrystal silicon ingot and polycrystal silicon ingot
CN109825877B (en) * 2012-03-22 2021-09-14 三菱综合材料株式会社 Polycrystalline silicon ingot and method for manufacturing polycrystalline silicon ingot
CN102925971A (en) * 2012-11-29 2013-02-13 常州亿晶光电科技有限公司 High-efficiency polycrystal ingot casting thermal field
CN102925971B (en) * 2012-11-29 2015-08-05 常州亿晶光电科技有限公司 High-efficiency polycrystalline ingot casting thermal field
CN104502166A (en) * 2014-12-15 2015-04-08 首钢总公司 Method of preparing sample wafer capable of representing grain sliding of steel and iron materials

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Application publication date: 20110615