CN103088417A - High-efficiency crucible for polycrystal ingot casting and preparation method thereof - Google Patents
High-efficiency crucible for polycrystal ingot casting and preparation method thereof Download PDFInfo
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- CN103088417A CN103088417A CN2013100229088A CN201310022908A CN103088417A CN 103088417 A CN103088417 A CN 103088417A CN 2013100229088 A CN2013100229088 A CN 2013100229088A CN 201310022908 A CN201310022908 A CN 201310022908A CN 103088417 A CN103088417 A CN 103088417A
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Abstract
The invention discloses a high-efficiency crucible for polycrystal ingot casting. The high-efficiency crucible comprises a conventional quartz crucible, wherein high-purity granules are uniformly inlaid at the bottom of the quartz crucible. The invention also discloses a preparation method of the high-efficiency crucible for the polycrystal ingot casting. Compared with the traditional quartz crucible, the high-efficiency crucible disclosed by the invention has the advantages that the high-purity granules are uniformly distributed at the bottom of the quartz crucible so that regularly-distributed fluctuated recesses and bulges are formed at the bottom of the quartz crucible, and the fluctuated recesses and bulges formed by the high-purity granules can guide crystal-shaped nucleuses to form uniform crystal nucleuses with moderate size, thereby being favorable to the growth quality of crystals at a later stage and easier to realize the increase of the conversion efficiency of silicon slices; after the high-purity granules are inlaid at the bottom of the quartz crucible, the high-purity granules are firmly fixed on the quartz crucible without being desquamated after being used, thereby being favorable to the demoulding of the quartz crucible after ingot casting and preventing the silicon materials positioned at the bottom from being scraped because the high-purity granules enter a silicon ingot; and the high-purity granules are uniformly arrayed in a matrix shape at the bottom of the quartz crucible, thereby being favorable to forming the uniformly-distributed crystal nucleuses with moderate sizes and favorable to enhancing the growth quality of the crystals at the later stage.
Description
Technical field
The present invention relates to the quartz crucible that a kind of polycrystal silicon ingot casting is used, the invention still further relates to the preparation method that a kind of polycrystal silicon ingot is cast the quartz crucible that uses.
Background technology
Solar cell divides silicon chip, cell piece, several manufacturing stages of assembly, in the polysilicon chip manufacturing processed, need use quartz crucible during the polycrystal silicon ingot casting.What polycrystalline cast ingot adopted is the method for directional freeze, and the silicon material is packed into after quartz crucible throws stove, generally includes heating, thawing, grows crystalline substance, annealing, the process such as cooling.After silicon material heating and melting is liquid state, make it begin the long brilliant polycrystal silicon ingot of casting of forming core from the bottom by technology controlling and process.
Present polycrystalline cast ingot quartz crucible, in the nucleation process of silicon crystal, the spontaneous random forming core of the silicon material of molten state and growth, the nucleus homogeneity that forms is relatively poor, cause forming more dislocation and other defectives in the long brilliant process of later stage crystal, silicon chip crystal grain skewness, its electricity conversion is generally on the low side.
Summary of the invention
The object of the present invention is to provide a kind of polycrystalline cast ingot high efficient crucible, by the particular design to the quartz crucible bottom, the homogeneous nucleation of guiding silicon crystal, make it form homogeneous, high-quality nucleus, thereby reduce the formation of lattice defect in long brilliant process of later stage, improve the electricity conversion after silicon chip is made cell piece.
Another object of the present invention is to provide the preparation method of the simple polycrystalline cast ingot of a kind of technique with high efficient crucible.
A kind of polycrystalline cast ingot high efficient crucible provided by the invention comprises conventional quartz crucible, and it is characterized in that: the bottom even of described quartz crucible is distributed with high purity granular.
Described high purity granular evenly is embedded in the quartzy slurry of quartz crucible bottom.
Described high purity granular is silicon-carbide particle, quartz particles, silicon grain or other particles identical or close with the crystalline silicon lattice parameter, and its particle diameter is 0.5-3mm.
The height of the outstanding quartz crucible of described high purity granular bottom is 1-2mm, and the spacing between high purity granular is 5-10mm, and high purity granular is arranged.
A kind of polycrystalline cast ingot provided by the invention preparation method of high efficient crucible is characterized in that comprising the following steps:
(1) make quartz crucible according to existing technique;
(2) choose suitable high purity granular;
(3) high purity granular is embedded in uniformly in the quartzy slurry of quartz crucible bottom;
(4) adopt sintering process that high purity granular firmly is fixed in the quartz crucible bottom and get final product.
Compare with existing quartz crucible, the present invention has following technique effect:
(1) the present invention is evenly distributed on quartz crucible bottom with high purity granular, the concavo-convex fluctuating that quartz crucible bottom formation rule is distributed, in the polycrystalline cast ingot process, the concavo-convex fluctuating that high purity granular forms can guide the crystal forming core, the nucleus that makes it form evenly, be of moderate size, be beneficial to the late growing stage quality of crystal, thereby be easier to realize the lifting of silicon chip transformation efficiency.
(2) after high purity granular was inlayed in quartz crucible bottom, high purity granular firmly was fixed on quartz crucible, and after using, particle does not come off, and was beneficial to the demoulding of crucible after ingot casting, had avoided high purity granular to enter into silicon ingot and had caused the bottom silicon material to be scrapped.
(3) to be matrix type in quartz crucible bottom evenly distributed for high purity granular, and between particle, spacing 5-10mm left and right, be conducive to form the nucleus that is evenly distributed, is of moderate size, and is beneficial to the raising of later stage crystal growth quality.
Description of drawings
Fig. 1 is the vertical view that polycrystalline cast ingot of the present invention is used high efficient crucible;
This is the sectional view of the described polycrystalline cast ingot of invention with high efficient crucible Fig. 2.
In figure, 1, quartz crucible, 2, high purity granular.
Embodiment
As shown in Figure 1, 2, polycrystalline cast ingot high efficient crucible of the present invention comprises conventional quartz crucible 1, and the bottom even of quartz crucible 1 is inlaid with high purity granular 2, and high purity granular 2 is the silicon-carbide particle of 1.5mm for particle diameter.The height of the outstanding quartz crucible of high purity granular 21 bottom is 1mm, and the spacing between high purity granular 2 is 5mm, and high purity granular 2 is arranged.
The above-mentioned polycrystalline cast ingot preparation method of high efficient crucible comprises the following steps: (1) makes quartz crucible 1 according to existing technique; (2) choose high purity granular 2; (3) high purity granular 2 is embedded in uniformly in the quartzy slurry of quartz crucible 1 bottom; (4) adopt sintering process that high purity granular 2 firmly is fixed in quartz crucible 1 bottom and get final product.
As shown in Figure 1, 2, polycrystalline cast ingot high efficient crucible of the present invention comprises conventional quartz crucible 1, and the bottom even of quartz crucible 1 is inlaid with high purity granular 2, and high purity granular 2 is the quartz particles of 2mm for particle diameter.The height of the outstanding quartz crucible of high purity granular 21 bottom is 1mm, and the spacing between high purity granular 2 is 5mm, and high purity granular 2 is arranged.
The above-mentioned polycrystalline cast ingot preparation method of high efficient crucible comprises the following steps: (1) makes quartz crucible 1 according to existing technique; (2) choose high purity granular 2; (3) high purity granular 2 is embedded in uniformly in the quartzy slurry of quartz crucible 1 bottom; (4) adopt sintering process that high purity granular 2 firmly is fixed in quartz crucible 1 bottom and get final product.
Embodiment 3
As shown in Figure 1, 2, polycrystalline cast ingot high efficient crucible of the present invention comprises conventional quartz crucible 1, and the bottom even of quartz crucible 1 is inlaid with high purity granular 2, and high purity granular 2 is the silicon grain of 1.5mm for particle diameter.The height of the outstanding quartz crucible of high purity granular 21 bottom is 1mm, and the spacing between high purity granular 2 is 6mm, and high purity granular 2 is arranged.
The above-mentioned polycrystalline cast ingot preparation method of high efficient crucible comprises the following steps: (1) makes quartz crucible 1 according to existing technique; (2) choose high purity granular 2; (3) high purity granular 2 is embedded in uniformly in the quartzy slurry of quartz crucible 1 bottom; (4) adopt sintering process that high purity granular 2 firmly is fixed in quartz crucible 1 bottom and get final product.
It should be noted that at last: the above is only own for the preferred embodiments of the present invention, be not limited to the present invention, although with reference to previous embodiment, the present invention is had been described in detail, for a person skilled in the art, it still can be modified to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps part technical characterictic wherein is equal to replacement.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a polycrystalline cast ingot high efficient crucible, comprise conventional quartz crucible, and it is characterized in that: the bottom even of described quartz crucible is distributed with high purity granular.
2. polycrystalline cast ingot high efficient crucible according to claim 1 is characterized in that: described high purity granular evenly is embedded in the quartzy slurry of quartz crucible bottom.
3. polycrystalline cast ingot high efficient crucible according to claim 2, it is characterized in that: described high purity granular is silicon-carbide particle, quartz particles or silicon grain, its particle diameter is 0.5-3mm.
4. polycrystalline cast ingot high efficient crucible according to claim 3 is characterized in that: the height of the outstanding quartz crucible of described high purity granular bottom is 1-2mm, and the spacing between high purity granular is 5-10mm, and high purity granular is arranged.
5. polycrystalline cast ingot claimed in claim 1 with the preparation method of high efficient crucible, is characterized in that comprising the following steps:
(1) make quartz crucible according to existing technique;
(2) choose suitable high purity granular;
(3) high purity granular is embedded in uniformly in the quartzy slurry of quartz crucible bottom;
(4) adopt sintering process that high purity granular firmly is fixed in the quartz crucible bottom and get final product.
6. polycrystalline cast ingot according to claim 5 is with the preparation method of high efficient crucible, and it is characterized in that: described high purity granular is silicon-carbide particle, quartz particles or silicon grain, and its particle diameter is 0.5-3mm.
7. polycrystalline cast ingot according to claim 5 with the preparation method of high efficient crucible, is characterized in that: the height of the outstanding quartz crucible of described high purity granular bottom is 1-2mm, and the spacing between high purity granular is 5-10mm, and high purity granular is arranged.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103320854A (en) * | 2013-06-07 | 2013-09-25 | 英利集团有限公司 | Coating structure for crucible, preparation method thereof, and crucible with coating structure |
| CN103343388A (en) * | 2013-07-18 | 2013-10-09 | 阿特斯(中国)投资有限公司 | Preparation method for polycrystalline silicon cast ingot |
| CN103361720A (en) * | 2013-08-05 | 2013-10-23 | 英利集团有限公司 | Crucible used for manufacturing polysilicon ingot |
| CN103966664A (en) * | 2014-04-10 | 2014-08-06 | 晶海洋半导体材料（东海）有限公司 | Heterogenous coating crucible for polycrystal ingotting and preparation method of heterogenous coating crucible |
| CN104018221A (en) * | 2014-05-08 | 2014-09-03 | 浙江晟辉科技有限公司 | Method for producing polycrystalline silicon ingot by applying heat exchange |
| CN104831349A (en) * | 2015-05-26 | 2015-08-12 | 江西旭阳雷迪高科技股份有限公司 | Method for increasing silicon slice quality through polycrystalline silicon ingot casting |
| CN104862778A (en) * | 2015-06-16 | 2015-08-26 | 江苏协鑫硅材料科技发展有限公司 | Preparation method of polycrystalline silicon ingot, polycrystalline silicon ingot and polycrystalline silicon wafer |
| CN105063751A (en) * | 2015-09-17 | 2015-11-18 | 晶科能源有限公司 | Cast ingot manufacturing method |
| CN105063748A (en) * | 2015-08-14 | 2015-11-18 | 烟台核晶陶瓷新材料有限公司 | Efficient crucible for polycrystal ingot casting and preparation method of efficient crucible |
| DE102015216734A1 (en) | 2015-09-02 | 2017-03-02 | Alzchem Ag | Crucible for the production of silicon ingots, process for its production and silicon ingots |
| CN106676627A (en) * | 2016-12-09 | 2017-05-17 | 浙江绿谷光伏科技有限公司 | Shaft furnace used for cast polycrystalline silicon |
| WO2017199132A1 (en) * | 2016-05-18 | 2017-11-23 | Rec Solar Pte. Ltd. | Silicon ingot growth crucible with patterned protrusion structured layer |
| CN107419330A (en) * | 2017-09-04 | 2017-12-01 | 江苏高照新能源发展有限公司 | A kind of oblique brilliant crucible of length of low sidewall and preparation method thereof |
| CN108486652A (en) * | 2018-04-19 | 2018-09-04 | 常熟华融太阳能新型材料有限公司 | A kind of high-efficiency seed crystal layer reducing polycrystalline silicon ingot casting dislocation |
| CN108914203A (en) * | 2018-07-18 | 2018-11-30 | 成都斯力康科技股份有限公司 | Metallic silicon refines deep impurity-removing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103320854A (en) * | 2013-06-07 | 2013-09-25 | 英利集团有限公司 | Coating structure for crucible, preparation method thereof, and crucible with coating structure |
| CN103320854B (en) * | 2013-06-07 | 2016-03-02 | 英利集团有限公司 | Crucible coating structure, its preparation method and comprise its crucible |
| CN103343388A (en) * | 2013-07-18 | 2013-10-09 | 阿特斯(中国)投资有限公司 | Preparation method for polycrystalline silicon cast ingot |
| CN103361720A (en) * | 2013-08-05 | 2013-10-23 | 英利集团有限公司 | Crucible used for manufacturing polysilicon ingot |
| CN103966664A (en) * | 2014-04-10 | 2014-08-06 | 晶海洋半导体材料（东海）有限公司 | Heterogenous coating crucible for polycrystal ingotting and preparation method of heterogenous coating crucible |
| CN104018221A (en) * | 2014-05-08 | 2014-09-03 | 浙江晟辉科技有限公司 | Method for producing polycrystalline silicon ingot by applying heat exchange |
| CN104831349A (en) * | 2015-05-26 | 2015-08-12 | 江西旭阳雷迪高科技股份有限公司 | Method for increasing silicon slice quality through polycrystalline silicon ingot casting |
| CN104862778A (en) * | 2015-06-16 | 2015-08-26 | 江苏协鑫硅材料科技发展有限公司 | Preparation method of polycrystalline silicon ingot, polycrystalline silicon ingot and polycrystalline silicon wafer |
| CN105063748A (en) * | 2015-08-14 | 2015-11-18 | 烟台核晶陶瓷新材料有限公司 | Efficient crucible for polycrystal ingot casting and preparation method of efficient crucible |
| CN105063748B (en) * | 2015-08-14 | 2017-11-10 | 烟台核晶陶瓷新材料有限公司 | A kind of polycrystalline cast ingot high efficient crucible and preparation method thereof |
| DE102015216734A1 (en) | 2015-09-02 | 2017-03-02 | Alzchem Ag | Crucible for the production of silicon ingots, process for its production and silicon ingots |
| WO2017036822A1 (en) | 2015-09-02 | 2017-03-09 | Alzchem Ag | Crucible for producing silicon ingots, method for its production and silicon ingot |
| CN105063751A (en) * | 2015-09-17 | 2015-11-18 | 晶科能源有限公司 | Cast ingot manufacturing method |
| WO2017199132A1 (en) * | 2016-05-18 | 2017-11-23 | Rec Solar Pte. Ltd. | Silicon ingot growth crucible with patterned protrusion structured layer |
| CN109642341A (en) * | 2016-05-18 | 2019-04-16 | 瑞科斯太阳能源私人有限公司 | Silicon ingot growth crucible with patterning raised structures layer |
| CN106676627A (en) * | 2016-12-09 | 2017-05-17 | 浙江绿谷光伏科技有限公司 | Shaft furnace used for cast polycrystalline silicon |
| CN107419330A (en) * | 2017-09-04 | 2017-12-01 | 江苏高照新能源发展有限公司 | A kind of oblique brilliant crucible of length of low sidewall and preparation method thereof |
| CN108486652A (en) * | 2018-04-19 | 2018-09-04 | 常熟华融太阳能新型材料有限公司 | A kind of high-efficiency seed crystal layer reducing polycrystalline silicon ingot casting dislocation |
| CN108914203A (en) * | 2018-07-18 | 2018-11-30 | 成都斯力康科技股份有限公司 | Metallic silicon refines deep impurity-removing method |
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