CN102653881A - Method for casting large-grained silicon ingot - Google Patents
Method for casting large-grained silicon ingot Download PDFInfo
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- CN102653881A CN102653881A CN201210118729XA CN201210118729A CN102653881A CN 102653881 A CN102653881 A CN 102653881A CN 201210118729X A CN201210118729X A CN 201210118729XA CN 201210118729 A CN201210118729 A CN 201210118729A CN 102653881 A CN102653881 A CN 102653881A
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Abstract
The invention discloses a method for casting a large-grained silicon ingot by adopting a directional-solidification growing method, mainly comprising the following steps of: (1) putting a monocrystalline silicon plate cut according to a certain crystal orientation on the bottom layer of a quartz crucible as seed crystals; (2) filling an appropriate quantity of polycrystalline silicon materials and doping elements on the seed crystals; (3) putting the crucible with the raw materials into a polycrystalline furnace, vacuumizing and heating to melt the silicon material at the upper part, and when the monocrystalline silicon plate starts to be melted at the later stage of melting, the temperature of the bottom of the crucible is controlled by adjusting the rise height of a heat-resistant cage; therefore, the seed crystals are partially melted; and (4) staring a crystal growing procedure, and forming a vertical temperature gradient by controlling the power of a heater and lifting the heat-resistant cage, so that the silicon crystals grow in the direction of the monocrystalline silicon plate which is not completely melted; and finally, carrying out annealing and cooling steps to obtain the large-grained polycrystalline silicon ingot.
Description
Technical field
The invention belongs to silicon chip of solar cell and make the field, be specifically related to a kind of method of casting big crystal grain silicon ingot.
Background technology
Polysilicon affects the photoelectric conversion rate of battery owing to itself there is a large amount of crystal boundaries, and silicon single crystal is more complete owing to inner crystalline structure, and defective is few, and the photoelectric conversion rate of battery is high, but production cost is higher.
Summary of the invention
The technical problem that the present invention will solve provides a kind of method of casting big crystal grain silicon ingot; This method is utilized original low cost and the high polysilicon foundry engieering of output; Produce the big crystal grain silicon ingot of single crystal-like, reduce number of grain boundaries, improve the photoelectric transformation efficiency of silicon chip.
For solving the problems of the technologies described above, the method that the present invention casts big crystal grain silicon ingot is achieved through following steps:
(1) will be laid on the bottom of quartz crucible by the silicon single crystal plate of [100] crystal orientation cutting as seed crystal;
(2) filling polycrystalline silicon material and alloying element on seed crystal;
The crucible that (3) said raw material will be housed drops in the polycrystalline furnace, vacuumizes heating, makes the polycrystalline silicon material fusing on seed crystal top, and when the later stage, the silicon single crystal plate began to melt to the polycrystalline silicon material fusing, the temperature through the control crucible bottom made the seed crystal partial melting.
(4) get into long brilliant program, the power of control heater forms vertical thermograde from crucible bottom, makes silicon crystal along the not direction of the silicon single crystal plate of fusing growth fully;
(5) after long brilliant the completion, annealed again and refrigerating work procedure obtains big crystal grain silicon ingot.
In above-mentioned steps:
The said silicon single crystal plate of step (1) is [100] perpendicular to crucible bottom planar crystal orientation.
The described alloying element of step (2) is boron or phosphorus.
In the initial stage operation of heating and fusing, the temperature of control heater is 1420-1550 ℃ in the step (3), is 1000-1400 ℃ in the temperature of fusing middle and later periods control crucible bottom, makes the seed crystal partial melting.
The brilliant process of length described in the step (4); Be that temperature with well heater is controlled at 1420-1500 ℃; Open the thermal insulation layer of crucible bottom heat-insulation cage simultaneously, let crucible bottom dispel the heat, crucible bottom formation temperature gradient realizes directional freeze; Treat that interface growth carries out the segmentation cooling after stable, makes the direction stable growth of crystal along the silicon single crystal plate that does not melt fully.
Description of drawings
Fig. 1 is a silicon material heating phase synoptic diagram of the present invention;
Fig. 2 is a silicon material fusion stage synoptic diagram of the present invention.
Embodiment
The single crystal rod in (100) crystal orientation that vertical pulling method is obtained according to certain cut direction, is processed the silicon single crystal plate as seed crystal.The shape of silicon single crystal plate can be long 720mm-800mm, and wide is 125mm-200mm, and thickness is the long plate shape of 10mmmm-30mm.
As depicted in figs. 1 and 2; The quartz crucible 2 of choice criteria size; Choose 5 above-mentioned silicon single crystal plates 5 smooth be placed on crucible bottom, add elements such as an amount of alloying element boron or phosphorus, filling polycrystalline silicon material 4 above monocrystalline plate 5 according to the requirement of target resistivity 1-3 ohm/cm; The crucible that said raw material is housed 2 is dropped in the polycrystalline furnace 6; Vacuumize heating; The temperature of control heater 3 is 1420-1550 ℃, makes the polycrystalline silicon material fusing on seed crystal top, when the later stage, the silicon single crystal plate began to melt to the polycrystalline silicon material fusing; Keeping the temperature of crucible bottom is 1000-1400 ℃, makes the seed crystal partial melting.In the long brilliant stage; The temperature of well heater is controlled at 1420-1500 ℃; Open heat-insulation cage 1 bottom thermal insulation layer 7 simultaneously, let crucible bottom dispel the heat, the formation temperature gradient realizes directional freeze; Treat that interface growth carries out the segmentation cooling after stable, makes the direction stable growth of crystal along the silicon single crystal plate that does not melt fully.Process subsequent annealing and refrigerating work procedure finally obtain the polycrystal silicon ingot of big crystal grain.
The description of above embodiment is comparatively concrete, detailed; But can not therefore be interpreted as restriction to claim of the present invention; Should be pointed out that for the person of ordinary skill of the art, under the prerequisite that does not break away from the present invention's design; Can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (5)
1. the method for the big crystal grain silicon ingot of casting is characterized in that, mainly comprises following steps:
(1) will be laid on the bottom of quartz crucible by the silicon single crystal plate of [100] crystal orientation cutting as seed crystal;
(2) filling polycrystalline silicon material and alloying element on seed crystal;
The crucible that (3) said raw material will be housed drops in the polycrystalline furnace, vacuumizes heating, makes the polycrystalline silicon material fusing on seed crystal top, and when the later stage, the silicon single crystal plate began to melt to the polycrystalline silicon material fusing, the temperature through the control crucible bottom made the seed crystal partial melting.
(4) get into long brilliant program, the power of control heater forms vertical thermograde from crucible bottom, makes silicon crystal along the not direction of the silicon single crystal plate of fusing growth fully;
(5) after long brilliant the completion, annealed again and refrigerating work procedure obtains big crystal grain silicon ingot.
2. the method for the big crystal grain silicon ingot of casting according to claim 1 is characterized in that: the said silicon single crystal plate of step (1) is [100] perpendicular to crucible bottom planar crystal orientation.
3. the method for the big crystal grain silicon ingot of casting according to claim 1 is characterized in that: the described alloying element of step (2) is boron or phosphorus.
4. the method for the big crystal grain silicon ingot of casting according to claim 1; It is characterized in that: in the step (3) the heating and the fusing the initial stage operation in; The temperature of control heater is 1420-1550 ℃; Temperature in fusing middle and later periods control crucible bottom is 1000-1400 ℃, makes the seed crystal partial melting.
5. the method for the big crystal grain silicon ingot of casting according to claim 1; It is characterized in that: the brilliant process of length described in the step (4) is that the temperature with well heater is controlled at 1420-1500 ℃, opens the thermal insulation layer of crucible bottom heat-insulation cage simultaneously; Let crucible bottom dispel the heat; Crucible bottom formation temperature gradient realizes directional freeze, treats that interface growth carries out the segmentation cooling after stable, makes the direction stable growth of crystal along the silicon single crystal plate that does not melt fully.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210118729XA CN102653881A (en) | 2012-04-20 | 2012-04-20 | Method for casting large-grained silicon ingot |
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| CN201210118729XA CN102653881A (en) | 2012-04-20 | 2012-04-20 | Method for casting large-grained silicon ingot |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361724A (en) * | 2013-06-21 | 2013-10-23 | 东海晶澳太阳能科技有限公司 | Boron-gallium co-doped efficient polycrystalline silicon and preparation method thereof |
| CN104195634A (en) * | 2014-09-10 | 2014-12-10 | 韩华新能源科技有限公司 | Novel thermal field structure of large-size silicon ingot polycrystal ingot furnace |
| CN112522782A (en) * | 2020-11-30 | 2021-03-19 | 晶科能源有限公司 | Polycrystalline silicon ingot and preparation method thereof |
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| JPH08277192A (en) * | 1995-04-04 | 1996-10-22 | Kobe Steel Ltd | Apparatus for producing compound semiconductor single crystal and its production |
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| CN101370969A (en) * | 2006-01-20 | 2009-02-18 | Bp北美公司 | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
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| CN101864594A (en) * | 2010-06-10 | 2010-10-20 | 晶海洋半导体材料（东海）有限公司 | Ingot casting method for quasi-monocrystalline silicon |
| CN102330144A (en) * | 2011-10-08 | 2012-01-25 | 陕西合木实业有限公司 | Preparation method and equipment of finished product large area seed crystal and rectangle large area seed crystal |
| CN102383184A (en) * | 2010-09-01 | 2012-03-21 | 赵钧永 | Crystal, and method and device for casting same |
| CN102392300A (en) * | 2011-11-02 | 2012-03-28 | 浙江碧晶科技有限公司 | Production method of solar energy level polysilicon ingot with crystalline grains arranged regularly |
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- 2012-04-20 CN CN201210118729XA patent/CN102653881A/en active Pending
Patent Citations (8)
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| JPH08277192A (en) * | 1995-04-04 | 1996-10-22 | Kobe Steel Ltd | Apparatus for producing compound semiconductor single crystal and its production |
| JPH1087392A (en) * | 1996-07-18 | 1998-04-07 | Japan Energy Corp | Production of compound semiconductor single crystal |
| CN101370969A (en) * | 2006-01-20 | 2009-02-18 | Bp北美公司 | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
| CN101654805A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Preparation method of casting columnar multi-crystal silicon with large crystal grains in single crystal direction |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361724A (en) * | 2013-06-21 | 2013-10-23 | 东海晶澳太阳能科技有限公司 | Boron-gallium co-doped efficient polycrystalline silicon and preparation method thereof |
| CN104195634A (en) * | 2014-09-10 | 2014-12-10 | 韩华新能源科技有限公司 | Novel thermal field structure of large-size silicon ingot polycrystal ingot furnace |
| CN104195634B (en) * | 2014-09-10 | 2016-08-17 | 韩华新能源科技有限公司 | Large scale silicon ingot polycrystalline ingot furnace thermal field structure |
| CN112522782A (en) * | 2020-11-30 | 2021-03-19 | 晶科能源有限公司 | Polycrystalline silicon ingot and preparation method thereof |
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Application publication date: 20120905 |