CN202744660U - Thermal field structure for ultra-large crystal grain ingot furnace - Google Patents
Thermal field structure for ultra-large crystal grain ingot furnace Download PDFInfo
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- CN202744660U CN202744660U CN 201220263480 CN201220263480U CN202744660U CN 202744660 U CN202744660 U CN 202744660U CN 201220263480 CN201220263480 CN 201220263480 CN 201220263480 U CN201220263480 U CN 201220263480U CN 202744660 U CN202744660 U CN 202744660U
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Abstract
The utility model relates to a thermal field structure for an ultra-large crystal grain ingot furnace and belongs to the technical field of polycrystalline silicon ingots in the photovoltaic industry production process. The thermal field structure is characterized by comprising a heater (4), wherein a heat insulation strip (6) is arranged under the heater (4), the bottom of the heat insulation strip (6) is fixedly provided with four graphite top rods (7), the middle part of each graphite top rod (7) is respectively and fixedly provided with a graphite baffle block (8), the bottom of a heating insulation cage (1) is provided with a circle of annular heat insulation block (9) under the graphite top rods (7), four small holes are longitudinally arranged in the heat insulation block (9), each small hole is respectively positioned right under the graphite top rods (7), graphite sleeves (10) are arranged in the small holes, and a lower heat insulation plate (11) is arranged under the heat insulation block (9). The thermal field structure has the advantages that the seed crystal melting quantity can be conveniently controlled, the edge corner polycrystalline of pseudo-single crystal ingots can also be reduced, and the finished product rate and the single crystal proportion of the ultra-large crystal grain ingots are improved.
Description
Technical field
The utility model relates to a kind of thermal field structure for super large crystal grain ingot furnace, belongs to the polycrystalline silicon ingot casting technical field in the photovoltaic industry production process.
Background technology
Silicon single crystal and polysilicon are the topmost two kinds of substrate materials of present solar cell industry, and silicon single crystal is made by drawing, have high-level efficiency, expensive characteristics, and polysilicon is made by casting, and battery has low cost, inefficient characteristics.Super large crystal grain be utilize that the method for polycrystalline cast ingot produces have single crystal orientation and than the super large crystal grain of fabricating low-defect-density, it has had low-cost and high efficiency characteristics concurrently battery, thereby has very large advantage.The method of multiple types monocrystalline ingot casting has been reported in United States Patent (USP) (US2007/0169684A1) and Chinese patent (200910152970.2), (201010198142.5) etc., wherein topmost a kind of method is to spread the monocrystalline of particular crystal orientation as seed crystal in crucible bottom, the silicon material of packing in the above, control silicon material melts degree in ingot furnace, after the part seed crystal melts, make crystal along upwards growth of seed crystal by bottom coohng, finally obtain super large crystal grain ingot.
For the polycrystalline ingot furnace of heater structure around having, heat is from transmitting to the center all around during owing to material, and temperature is high around the crucible inside, core temperature is low, solid-liquid interface is convex, and the corner seed crystal easily melts, and causes super large crystal grain ingot corner areas to have a large amount of polycrystalline to form.It is included in existing polycrystalline silicon ingot or purifying furnace such as Chinese patent (CN101851782A) disclosed " a kind of double-cavity heat-insulation cage of second single crystal silicon ingot production furnace " ingot furnace heat-insulation cage inwall and arranges heat-insulation cage is divided into the up and down collar stop of two chambers, the bottom of crucible is positioned at the downside of collar stop, other parts of crucible are positioned at the upside of collar stop, widen the thermograde in silicon material thawing stage, be convenient to control the melted mass of seed crystal.
This thermal field structure is when the long brilliant stage, because crucible bottom is positioned at the downside of heat insulation, the heat of well heater can't direct radiation to crucible bottom, cause the crucible bottom side wall temperatures on the low side, silicon liquid is easily in the sidewall crystallization, and to silicon liquid growth inside, finally form a large amount of polycrystalline in super large crystal grain ingot corner areas, reduced the quality of whole ingot.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provides a kind of and can conveniently control the seed crystal melted mass, can reduce again accurate monocrystalline ingot casting corner polycrystalline, improves the thermal field structure that is used for super large crystal grain ingot furnace of monocrystalline ratio and the yield rate of super large crystal grain ingot.
The purpose of this utility model is achieved in that
The utility model is used for the thermal field structure of super large crystal grain ingot furnace, it comprises heat-insulation cage, the inside of heat-insulation cage is provided with quartz crucible, the periphery of this quartz crucible is provided with the graphite backplate, the outside of described graphite backplate is provided with well heater, the below of described well heater is provided with heat insulating strip, this heat insulating strip bottom is fixed with four graphite push rods, wherein the middle part of every graphite push rod all is fixed with the graphite block, heat-insulation cage bottom is provided with the insulation block of a ring shape below the graphite push rod, vertically have four apertures in the described insulation block, each aperture all be positioned at the graphite push rod under, be provided with graphite sleeve in the aperture, the below of described insulation block is provided with lower warming plate.
The gap is all left in the inwall of described heat insulating strip and heat-insulation cage and the graphite backplate outside.
Described heat insulating strip is an annular heat insulating strip that is comprised of three layers of curing carbon felt.
The thermal field structure that the utility model is used for super large crystal grain ingot furnace has the following advantages:
The thermal field structure that the utility model is used for super large crystal grain ingot furnace has added the heat insulating strip that can move up and down in heat-insulation cage, the silicon material melts the stage heat insulating strip and is positioned at upper, can stop well heater to the radiation of crucible bottom and DS piece, make solid-liquid interface more flat, be convenient to control seed crystal fusing amount, seed crystal thickness also can be controlled thinlyyer, improves the yield rate of super large crystal grain ingot, reduces accurate monocrystalline ingot casting cost; In the long brilliant stage, the graphite block is positioned at the next, and well heater is directly to the crucible bottom radiations heat energy, and the crucible bottom side wall temperatures raises, and suppresses silicon liquid from sidewall structures crystal orientation silicon liquid growth inside, and super large crystal grain ingot corner part polycrystalline ratio reduces.
Description of drawings
Fig. 1 is that the utility model is used for the schematic diagram of the thermal field structure of super large crystal grain ingot furnace in the material stage.
Fig. 2 is that the utility model is used for the schematic diagram of the thermal field structure of super large crystal grain ingot furnace in the long brilliant stage.
Among the figure: heat-insulation cage 1, quartz crucible 2, graphite backplate 3, well heater 4, seed crystal 5, heat insulating strip 6, graphite push rod 7, graphite block 8, insulation block 9, graphite sleeve 10, lower warming plate 11.
Embodiment
Referring to Fig. 1 and Fig. 2, the utility model relates to a kind of thermal field structure for super large crystal grain ingot furnace, comprise heat-insulation cage 1, the inside of heat-insulation cage 1 is provided with quartz crucible 2, the periphery of this quartz crucible 2 is provided with graphite backplate 3, quartz crucible 2 can be put into seed crystal 5, the outside of described graphite backplate 3 is provided with well heater 4, the below of described well heater 4 is provided with an annular heat insulating strip 6 that is comprised of three layers of curing carbon felt, described heat insulating strip 6 all leaves the gap with inwall and graphite backplate 3 outsides of heat-insulation cage 1, can be so that graphite block 8 moves up and down the circulation with process gas, these heat insulating strip 6 bottoms are fixed with four graphite push rods 7, wherein the middle part of every graphite push rod 7 all is fixed with graphite block 8, heat-insulation cage 1 bottom is provided with the insulation block 9 of a ring shape below graphite push rod 7, vertically have four apertures in the described insulation block 9, each aperture all be positioned at graphite push rod 7 under, be provided with graphite sleeve 10 in the aperture, heat insulating strip 6 can move up and down under graphite push rod 7 drives, so that graphite push rod 7 is inserted in the graphite sleeve 10.Heat insulating strip 6 is positioned at upper during silicon material material, its upside remains on more than the crucible bottom, heat insulating strip moves on to the next after turning the long brilliant stage, its upside remains on below the crucible bottom, the below of described insulation block 9 is provided with lower warming plate 11, this time warming plate 11 links to each other with the bottom of heat-insulation cage 1, can open lower warming plate 11 downwards when entering the long brilliant stage.
When this thermal field structure for super large crystal grain ingot furnace is worked:
1, the silicon material melts the stage, lower warming plate 11 is positioned at upper, annular heat insulating strip 6 is raised to upper in the effect of four graphite push rods 7, heat insulating strip 6 upsides are positioned at more than the crucible bottom, the direct radiation that can stop 4 pairs of quartz crucible 2 bottoms of well heater, thereby the solid-liquid interface that seed crystal 5 is melted is more flat, is convenient to control the melted mass of seed crystal 5.
2, change length over to after the brilliant stage, lower warming plate 11 is opened downwards, the heat of quartz crucible 2 bottoms is radiate by the opening between lower warming plate 11 and the heat-insulation cage 1, thereby reach the end of to the purpose of top directional freeze.When lower warming plate 11 descends, heat insulating strip 6 and graphite push rod 7 under action of gravitation also along with lower warming plate 11 descends, graphite block 8 on graphite push rod 7 contacts with the insulation block 9 of heat-insulation cage 1 bottom, graphite push rod 7 and heat insulating strip 6 just no longer move down, at this moment the upside of heat insulating strip 6 is positioned at below quartz crucible 2 bottoms, thereby well heater 5 can direct radiation arrive quartz crucible 2 bottom sides, grows up in quartz crucible 2 inwall crystallizations with to silicon liquid inside thereby suppress silicon liquid.
3, lower warming plate 11 continues to descend, and silicon liquid is upwards solidified gradually by the bottom, until ingot casting finishes.
Claims (3)
1. thermal field structure that is used for super large crystal grain ingot furnace, it comprises heat-insulation cage (1), the inside of heat-insulation cage (1) is provided with quartz crucible (2), the periphery of this quartz crucible (2) is provided with graphite backplate (3), the outside of described graphite backplate (3) is provided with well heater (4), it is characterized in that: the below of described well heater (4) is provided with heat insulating strip (6), this heat insulating strip (6) bottom is fixed with four graphite push rods (7), wherein the middle part of every graphite push rod (7) all is fixed with graphite block (8), heat-insulation cage (1) bottom is provided with the insulation block (9) of a ring shape in graphite push rod (7) below, vertically have four apertures in the described insulation block (9), each aperture all be positioned at graphite push rod (7) under, be provided with graphite sleeve (10) in the aperture, the below of described insulation block (9) is provided with lower warming plate (11).
2. a kind of thermal field structure for super large crystal grain ingot furnace according to claim 1 is characterized in that: all leave the gap outside the inwall of described heat insulating strip (6) and heat-insulation cage (1) and the graphite backplate (3).
3. a kind of thermal field structure for super large crystal grain ingot furnace according to claim 1 and 2 is characterized in that: described heat insulating strip (6) is one and solidifies the annular heat insulating strip that the carbon felts form by three layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220263480 CN202744660U (en) | 2012-06-06 | 2012-06-06 | Thermal field structure for ultra-large crystal grain ingot furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220263480 CN202744660U (en) | 2012-06-06 | 2012-06-06 | Thermal field structure for ultra-large crystal grain ingot furnace |
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| CN202744660U true CN202744660U (en) | 2013-02-20 |
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| CN 201220263480 Expired - Fee Related CN202744660U (en) | 2012-06-06 | 2012-06-06 | Thermal field structure for ultra-large crystal grain ingot furnace |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104372403A (en) * | 2014-11-11 | 2015-02-25 | 华中科技大学 | Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block |
| CN105332051A (en) * | 2015-10-30 | 2016-02-17 | 江苏美科硅能源有限公司 | Bottom seed crystal protecting device for polycrystal casting |
| CN105780109A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Device and method for improving edge grain tilting growth of polycrystalline ingot furnace |
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
-
2012
- 2012-06-06 CN CN 201220263480 patent/CN202744660U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104372403A (en) * | 2014-11-11 | 2015-02-25 | 华中科技大学 | Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block |
| CN104372403B (en) * | 2014-11-11 | 2017-04-12 | 华中科技大学 | Heat insulation block for polysilicon ingot casting furnace and polysilicon ingot casting furnace comprising heat insulation block |
| CN105332051A (en) * | 2015-10-30 | 2016-02-17 | 江苏美科硅能源有限公司 | Bottom seed crystal protecting device for polycrystal casting |
| CN105780109A (en) * | 2016-04-08 | 2016-07-20 | 江西旭阳雷迪高科技股份有限公司 | Device and method for improving edge grain tilting growth of polycrystalline ingot furnace |
| CN105970283A (en) * | 2016-07-28 | 2016-09-28 | 江苏协鑫硅材料科技发展有限公司 | Ingot furnace thermal field structure and preparation technology |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right | ||
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Effective date of registration: 20180914 Granted publication date: 20130220 |
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| PD01 | Discharge of preservation of patent | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20210914 Granted publication date: 20130220 |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130220 Termination date: 20180606 |