CN102433585A - Thermal field structure of quasi-monocrystal ingot furnace - Google Patents
Thermal field structure of quasi-monocrystal ingot furnace Download PDFInfo
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- CN102433585A CN102433585A CN2011104048186A CN201110404818A CN102433585A CN 102433585 A CN102433585 A CN 102433585A CN 2011104048186 A CN2011104048186 A CN 2011104048186A CN 201110404818 A CN201110404818 A CN 201110404818A CN 102433585 A CN102433585 A CN 102433585A
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Abstract
The invention relates to a thermal field structure of a quasi-monocrystal ingot furnace, which comprises an upper heat-preserving furnace body and a lower heat-preserving furnace body which are vertically matched with each other. A group of supporting rods is arranged at the internal bottom of the lower heat-preserving furnace body. A crucible is arranged on the supporting rods. An air inlet pipe is arranged above the crucible. A movable thermal field chamber is arranged outside the crucible. The bottom of the crucible is an inverted-truncated-pyramid chamber body structure. A storage container is arranged at the lower end of the inverted-truncated-pyramid chamber body structure. Seed crystals are arranged in the storage container. A directional seed growth block is arranged at the bottom of the storage container. A heating assembly, an upper temperature sensor, a lower temperature sensor and the like are arranged in the movable thermal field chamber. By adopting the structural arrangement, the crystal growth effect can be obviously improved; and in the crystal guide process, the seed crystals can be always kept in a cooling area, the seed crystals are prevented from being melted and the yield of cast quasi-monocrystals is improved. By using the thermal field structure of the quasi-monocrystal ingot furnace for casting the quasi-monocrystals, the yield can reach 95 to 100 percent.
Description
Technical field
The present invention relates to a kind of photovoltaic solar cell production field, especially a kind of accurate monocrystalline ingot furnace thermal field structure.
Background technology
Energy problem is one of hot issue maximum in the world today.A large amount of uses of traditional energy cause the world energy sources store content sharply to descend, and problem of environmental pollution are on the rise, and development of human society is constituted serious harm, and emerging pollution-free energy source have just become the inexorable trend of energy technology development.Sun power is one of green energy resource of permanence, and in sun power utilized, photovoltaic cell was present topmost a kind of product, and silicon crystal is the base mateiral that photovoltaic cell is produced.Silicon crystal comprises single crystal, polycrystal; Single crystal is that with multicrystal difference their atomic structure arrangement is different; It is that nucleus grows up to the identical ordered arrangement of high preferred orientation that the atomic structure of single crystal is arranged; And multicrystal atomic structure to arrange be that nucleus grows up to the different lack of alignment of high preferred orientation, both mainly are by their complete processing decision.In the practical application, the monocrystalline silicon battery photoelectric conversion rate is higher to reach 14%～17%, and the polycrystal silicon cell efficiency of conversion is merely 12%～14%.Therefore, monocrystalline will be the staple product material of photovoltaic solar utilization from now on.But cast accurate monocrystalline at photovoltaic at present; Accurate monocrystalline yield is on the low side 50%, and the crucible bottom in the ingot furnace is flat-bottom structure at present, and the crucible bottom seed crystal melts the control difficulty in production process; Temperature controlled quality also can directly influence long brilliant efficient, and is prone to cause the wasting of resources.
Summary of the invention
The present invention will solve the shortcoming of above-mentioned prior art, and the accurate monocrystalline ingot furnace thermal field structure of a kind of brilliant efficient height rational in infrastructure, long and energy-conserving and environment-protective is provided, and meets the need of market.
The present invention solves the technical scheme that its technical problem adopts: this accurate monocrystalline ingot furnace thermal field structure; Comprise the last thermal insulation furnace body of the coupling of coincideing up and down, following thermal insulation furnace body, following thermal insulation furnace body inner bottom part is provided with one group of support bar, and support bar is provided with crucible; The crucible top is provided with inlet pipe; Crucible is provided with movable thermal field chamber outward, and movable heat is robbed and is provided with heating component in the chamber, and movable thermal field chamber comprises thermal baffle, following thermal baffle; Upward thermal baffle, the outer airtight movable sleeve of following thermal baffle are connected to the collet body, are connected with one group of lifting rod on the heat insulation body; Heating component comprises hot-plate, side hot-plate, and last hot-plate is located between thermal baffle and the crucible, and the side hot-plate is located at the crucible outside; Be equipped with TP in the last thermal baffle, be equipped with down TP in the following thermal baffle; Crucible bottom is is inverted the terrace with edge cavity configuration, is inverted terrace with edge cavity configuration lower end and is provided with storage vessel, is provided with seed crystal in this storage vessel, and the storage vessel bottom is provided with the directional long crystal piece.Like this, like this,, can thermal field be divided into cold missing plot, gradient zones, three zones, heating zone during use, at the uniform velocity control heat insulation body through orientation through the setting of movable thermal field chamber.Through two hot-plates and two TPs crucible is carried out heat temperature raising and detect, the temperature in the thermal field is effectively controlled, effectively control the vertical temperature gradient of thermal field, guarantee long brilliant process orientation at the uniform velocity.Because being, crucible bottom is inverted the terrace with edge cavity configuration; And storage vessel is set being inverted terrace with edge cavity configuration lower end; In storage vessel, place seed crystal again; Seed crystal is in the cooling zone always, has effectively avoided the situation that seed crystal melts in the seeding process to occur, thereby improved the accurate monocrystalline yield of casting accurate monocrystalline.
Further, last TP, following TP are separate thermopair.Independent each regional temperature of control is convenient in the separate setting of TP, in having reduced production process, in the waste of energy, has also improved accurate monocrystalline yield.
The effect that the present invention is useful is: of the present invention rational in infrastructure, compact, and through setting, and be provided with in crucible bottom and be inverted the terrace with edge cavity configuration at movable thermal field chamber, can obviously improve long brilliant effect; In inversion terrace with edge cavity configuration lower end storage vessel is set, in storage vessel, places seed crystal again, in the seeding process, seed crystal can be in the cooling zone always, avoids seed crystal to melt, thereby has improved the accurate monocrystalline yield of casting.Adopt ingot furnace thermal field structure of the present invention to cast accurate monocrystalline, yield can reach 95%～100%.Cost of the present invention is reasonable, and accurate monocrystalline yield is high, and easy to operate, result of use is good, is worthy to be popularized.
Description of drawings
Structural representation when Fig. 1 analyses and observe for the present invention.
Description of reference numerals: go up thermal insulation furnace body 1, following thermal insulation furnace body 2, support bar 3, crucible 4, inlet pipe 5; Movable thermal field chamber 6, heating component 7, last thermal baffle 8, following thermal baffle 9, heat insulation body 10; Lifting rod 11, last hot-plate 12, side hot-plate 13, last TP 14, following TP 15; Be inverted terrace with edge cavity configuration 16, storage vessel 17, directional long crystal piece 18, seed crystal 19.
Embodiment
Below in conjunction with accompanying drawing the present invention is described further:
With reference to accompanying drawing: this accurate monocrystalline ingot furnace thermal field structure in the present embodiment; Comprise the last thermal insulation furnace body 1 of the coupling of coincideing up and down, following thermal insulation furnace body 2, following thermal insulation furnace body 2 inner bottom parts are provided with one group of support bar 3, and support bar 3 is provided with crucible 4; Crucible 4 tops are provided with inlet pipe 5; Be provided with movable thermal field chamber 6 outside the crucible 4, movable heat is robbed and is provided with heating component 7 in the chamber 6, and movable thermal field chamber 6 comprises thermal baffle 8, following thermal baffle 9; Upward thermal baffle 8, following thermal baffle 9 outer airtight movable sleeves are connected to collet body 10, are connected with one group of lifting rod 11 on the heat insulation body 10; Heating component 7 comprises hot-plate 12, side hot-plate 13, and last hot-plate 12 is located between thermal baffle 8 and the crucible 4, and side hot-plate 13 is located at crucible 4 outsides; Be equipped with TP 14 in the last thermal baffle 8, be equipped with down TP 15 in the following thermal baffle 9; Crucible 4 bottoms are is inverted terrace with edge cavity configuration 16, is inverted terrace with edge cavity configuration 16 lower ends and is provided with storage vessel 17, is provided with seed crystal 19 in this storage vessel, and storage vessel 17 bottoms are provided with directional long crystal piece 18.Last TP 14, TP 15 is separate thermopair down.
When the present invention uses; Heat insulation body 9 is in the process that lifting rod 10 promotes, because under the effect of heat insulation body 9, heat insulation loop 12 etc., thermal field is cut apart cold missing plot, gradient zones, three zones, heating zone; Last TP 15, down TP 16 transducing signal down in the control heating of hot-plate 13, side hot-plate 14 dispel the heat; Make silicon ability crystallographic orientation, the crystallization and freezing process is effectively controlled, thereby improves accurate monocrystalline yield.Be inverted terrace with edge cavity configuration 16 because crucible 4 bottoms are, can obviously improve long brilliant effect.In inversion terrace with edge cavity configuration 16 lower ends storage vessel 17 is set; In storage vessel 17, place seed crystal 19 again; Seed crystal 19 is in the cooling zone always, has effectively avoided the situation that seed crystal 19 melts in the seeding process to occur, thereby further improved the accurate monocrystalline yield of casting accurate monocrystalline.Adopt ingot furnace thermal field structure of the present invention to cast accurate monocrystalline, yield can reach 95%～100%.
Though the present invention is through illustrating and describe with reference to preferred embodiment,, those skilled in the art should understand, and in the scope of claims, can do the various variation on form and the details.
Claims (2)
1. accurate monocrystalline ingot furnace thermal field structure; Comprise the last thermal insulation furnace body (1) of the coupling of coincideing up and down, following thermal insulation furnace body (2); Said thermal insulation furnace body (2) inner bottom part down is provided with one group of support bar (3); Said support bar (3) is provided with crucible (4), and said crucible (4) top is provided with inlet pipe (5), the outer movable thermal field chamber (6) that is provided with of said crucible (4); Be provided with heating component (7) in the said movable thermal field chamber (6); It is characterized in that: said movable thermal field chamber (6) comprises thermal baffle (8), following thermal baffle (9), and thermal baffle on this (8), the outer airtight movable sleeve of following thermal baffle (9) are connected to collet body (10), are connected with one group of lifting rod (11) on the said heat insulation body (10); Said heating component (7) comprises hot-plate (12), side hot-plate (13), and the said hot-plate (12) of going up is located between thermal baffle (8) and the crucible (4), and said side hot-plate (13) is located at crucible (4) outside; Be equipped with TP (14) in the said last thermal baffle (8), be equipped with down TP (15) in the said following thermal baffle (9); Said crucible (4) bottom is is inverted terrace with edge cavity configuration (16); Said inversion terrace with edge cavity configuration (16) lower end is provided with storage vessel (17); Be provided with seed crystal (19) in this storage vessel, said storage vessel (17) bottom is provided with directional long crystal piece (18).
2. accurate monocrystalline ingot furnace thermal field structure according to claim 1 is characterized in that: said upward TP (14), following TP (15) are separate thermopair.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110404818.6A CN102433585B (en) | 2011-12-08 | 2011-12-08 | Thermal field structure of quasi-monocrystal ingot furnace |
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| CN201110404818.6A CN102433585B (en) | 2011-12-08 | 2011-12-08 | Thermal field structure of quasi-monocrystal ingot furnace |
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| CN102433585A true CN102433585A (en) | 2012-05-02 |
| CN102433585B CN102433585B (en) | 2014-01-29 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102703968A (en) * | 2012-06-05 | 2012-10-03 | 湖南红太阳光电科技有限公司 | Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process |
| CN102766901A (en) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | Device for growing large-size and high-temperature crystals with real-time adjustable temperature gradient method and method |
| CN109321975A (en) * | 2018-11-19 | 2019-02-12 | 永平县泰达废渣开发利用有限公司 | Monocrystalline silicon directional solidification seeding module |
| CN109576786A (en) * | 2018-12-31 | 2019-04-05 | 霍焕金 | The cooling system and method for one type monocrystalline silicon cast ingot furnace |
| AU2020289881B1 (en) * | 2020-11-30 | 2021-11-18 | Jinko Solar Co., Ltd. | Single crystal furnace |
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| JPH0316988A (en) * | 1989-06-14 | 1991-01-24 | Hitachi Cable Ltd | Production device of single crystal of compound semiconductor |
| CN101906657A (en) * | 2010-07-08 | 2010-12-08 | 王敬 | System for manufacturing single crystal ingot |
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
-
2011
- 2011-12-08 CN CN201110404818.6A patent/CN102433585B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0316988A (en) * | 1989-06-14 | 1991-01-24 | Hitachi Cable Ltd | Production device of single crystal of compound semiconductor |
| CN101906657A (en) * | 2010-07-08 | 2010-12-08 | 王敬 | System for manufacturing single crystal ingot |
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102703968A (en) * | 2012-06-05 | 2012-10-03 | 湖南红太阳光电科技有限公司 | Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process |
| CN102703968B (en) * | 2012-06-05 | 2015-02-04 | 湖南红太阳光电科技有限公司 | Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process |
| CN102766901A (en) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | Device for growing large-size and high-temperature crystals with real-time adjustable temperature gradient method and method |
| CN102766901B (en) * | 2012-08-20 | 2015-09-30 | 元亮科技有限公司 | The device and method of real-time, tunable Growth by Temperature Gradient Technique large size high temperature crystal |
| CN109321975A (en) * | 2018-11-19 | 2019-02-12 | 永平县泰达废渣开发利用有限公司 | Monocrystalline silicon directional solidification seeding module |
| CN109576786A (en) * | 2018-12-31 | 2019-04-05 | 霍焕金 | The cooling system and method for one type monocrystalline silicon cast ingot furnace |
| AU2020289881B1 (en) * | 2020-11-30 | 2021-11-18 | Jinko Solar Co., Ltd. | Single crystal furnace |
| US11795570B2 (en) | 2020-11-30 | 2023-10-24 | Jinko Solar Co., Ltd. | Single crystal furnace |
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| CN102433585B (en) | 2014-01-29 |
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Inventor after: Zhang Lixin Inventor after: Wang Yuli Inventor before: Pan Song |