CN101532172A - Thermal device for growing silicon monocrystal - Google Patents
Thermal device for growing silicon monocrystal Download PDFInfo
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- CN101532172A CN101532172A CN200910022094A CN200910022094A CN101532172A CN 101532172 A CN101532172 A CN 101532172A CN 200910022094 A CN200910022094 A CN 200910022094A CN 200910022094 A CN200910022094 A CN 200910022094A CN 101532172 A CN101532172 A CN 101532172A
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- heater
- travel mechanism
- heat
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Abstract
The invention discloses a thermal device for growing silicon monocrystal. The device comprises a substrate, wherein a mobile mechanism A and a mobile mechanism B are arranged in the substrate side by side; the substrate is fixed with a workshop; the bottom of the workshop is fixedly connected with an insulating cylinder; an insulating cylinder cover is arranged on the top of the insulating cylinder; a steadying bar is vertically arranged in the insulating cylinder; a crucible is fixedly connected with the top of the steadying bar; the mobile mechanism A is fixedly connected with the lower end of an electrode A, and the joint of the connection is provided with an insulating bush A; the electrode A passes through the top of the substrate and extends into the insulating cylinder, and is fixed with a heater; the annular heater is positioned between the crucible and the side wall of the insulating cylinder, and is arranged around the crucible; the mobile mechanism A drives the heater to move up and down through the electrode A; the mobile mechanism B is fixed with the lower end of an electrode B; the electrode B passes through the top of the substrate and extends into the insulating cylinder, and is fixed with a bottom heater; the bottom heater is positioned below the crucible; and the mobile mechanism B drives the bottom heater to move up and down through the electrode B. The thermal device can quickly heat raw materials in different amounts, form a steady and reasonable temperature field, grow qualified monocrystal with high quality, and save energy.
Description
Technical field
The invention belongs to the semiconductor material preparing technical field, relate to a kind of thermic devices of growing silicon single crystal.
Background technology
Silicon single-crystal is a main raw material of making unicircuit and solar cell, the preparation of silicon single-crystal (growth) is block polycrystalline starting material to be put into crucible in that vacuum work is indoor, by well heater with the fusing of polycrystalline starting material, then, by the seed crystal guiding, grow the ideal monocrystalline; Has only a well heater in the conventional silicon monocrystal growth thermal process system, and it maintains static, make well heater and the position that is heated between the fusing polycrystal raw material not to adjust, when the material amount of the polycrystalline silicon raw material that adds not simultaneously, can't realize the quick fusing of polycrystalline silicon raw material, not only waste energy but also be difficult to form the rational temperature field.
Summary of the invention
The thermic devices that the purpose of this invention is to provide a kind of growing semiconductor silicon single-crystal can melt the polycrystalline silicon raw material of different material amounts fast, and can form the temperature field of reasonably stability, save energy.
The technical solution adopted in the present invention is, a kind of thermic devices of growing silicon single crystal, the pedestal that comprises hollow, A of travel mechanism and the B of travel mechanism have been arranged side by side in the pedestal, be connected with the working spaces of hollow on the pedestal, be provided with the heat-preservation cylinder that is fixed in the bottom, working spaces in the working spaces, the top of heat-preservation cylinder is provided with the insulation cover, vertically be provided with support bar in the heat-preservation cylinder, the top of support bar is connected with crucible, the A of travel mechanism is fixedlyed connected with the lower end of the electrode A that vertically is provided with, the junction of A of travel mechanism and electrode A is provided with insulation covering A, the upper end of electrode A is upward through the pedestal top and stretches in the heat-preservation cylinder, and it is affixed with well heater, well heater is an annular, between crucible and heat-preservation cylinder sidewall, around the crucible setting, the A of travel mechanism drives well heater by electrode A and moves up and down, the B of travel mechanism is fixedlyed connected with the lower end of the electrode B that vertically is provided with, the upper end of electrode B is upward through the pedestal top and stretches in the heat-preservation cylinder, and affixed with bottom heater, bottom heater is positioned at the below of crucible, and the B of travel mechanism drives bottom heater by electrode B and moves up and down.
Feature of the present invention also is,
The top of bottom heater is plate shaped or the awl dish type.
Thermic devices of the present invention adopts double-heater moving up and down, can rapid heating melt the polycrystalline silicon raw material of different material amounts, and the rational temperature field is stablized in formation in thermal field, grows high-quality qualified silicon single-crystal, realized simultaneously saving energy and reduce the cost, and simple in structure, easy to use.
Description of drawings
Fig. 1 is the structural representation of thermic devices of the present invention.
Among the figure, 1. working spaces, 2. heat-preservation cylinder, 3. crucible, 4. well heater, 5. electrode A, 6. insulation covering A, the 7. A of travel mechanism, 8. pedestal, the 9. B of travel mechanism, 10. insulation covering B, 11. electrode B, 12. support bars, 13. bottom heaters, 14. insulation covers.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
The structure of thermic devices of the present invention, as shown in Figure 1.The pedestal 8 that comprises hollow has been arranged side by side A7 of travel mechanism and the B9 of travel mechanism in the pedestal 8.Be connected with the working spaces 1 of hollow on the pedestal 8, be provided with heat-preservation cylinder 2 in the working spaces 1, heat-preservation cylinder 2 is fixedlyed connected with the bottom of working spaces 1, and the top of heat-preservation cylinder 2 is provided with insulation cover 14.Vertically be provided with support bar 12 in the heat-preservation cylinder 2, the top of support bar 12 is connected with crucible 3, and the lower end of support bar 12 is passed the bottom of heat-preservation cylinder 2, the bottom of working spaces 1 and the top of pedestal 8 successively and stretched in the pedestal 8.The A7 of travel mechanism is fixedlyed connected with the lower end of the electrode A 5 that vertically is provided with, the junction of A7 of travel mechanism and electrode A 5 is provided with insulation covering A6, the upper end of electrode A 5 is upwards passed pedestal 8 tops, 1 bottom, working spaces and heat-preservation cylinder 2 bottoms successively and is stretched in the heat-preservation cylinder 2, and affixed with well heater 4; Well heater 4 is annular between crucible 3 and heat-preservation cylinder 2 sidewalls, be provided with around crucible 3, and the A7 of travel mechanism can drive well heater 4 by electrode A 5 and move up and down.The B9 of travel mechanism is fixedlyed connected with the lower end of the electrode B 11 that vertically is provided with, the upper end of electrode B 11 is upwards passed pedestal 8 tops, guarantor 1 bottom, working spaces and heat-preservation cylinder 2 bottoms successively and is stretched in the heat-preservation cylinder 2, and it is affixed with bottom heater 13, bottom heater 13 is positioned at the below of crucible 3, and the B9 of travel mechanism can drive bottom heater 13 by electrode B 11 and move up and down.
Bottom heater 13 end faces are plate shaped or the awl dish type, A7 of travel mechanism and electrode A 5 insulation, B9 of travel mechanism and electrode B 11 insulation.
The working process of thermic devices of the present invention:
Polycrystalline silicon raw material is put into crucible 3, and the tight insulation of lid cover 14 vacuumizes working spaces 1.Then, start two travel mechanisms, the A7 of travel mechanism drives electrode A 5 and moves down, and electrode A 5 drives well heater 4 and is moved downward to the appropriate location; The B9 of travel mechanism drives electrode B 11 and moves up, and electrode B 11 drives bottom heater 13 and moves up, and near the bottom of crucible 3, closes two travel mechanisms.Connect the power supply of electrode A 5 and electrode B 11, electrode A 5 and electrode B 11 feed electric current well heater 4 and bottom heater 13 respectively, the well heater 4 and bottom heater 13 evolutions of heat, polycrystalline silicon raw material in the crucible 3 is heated, make its fusing, carry out seed crystal guiding growth then, make semiconductor silicon single crystal.
Material amount according to the polycrystalline silicon raw material that adds in the crucible 3, regulate relative position between well heater 4 and bottom heater 13 and the crucible 3 respectively by two travel mechanisms, can carry out heat fused to the polycrystalline silicon raw material in the crucible 3 fast, and the rational temperature field is stablized in formation.
Thermic devices of the present invention adopts double-heater moving up and down, by adjusting the relative position between well heater and the crucible 3, can the polycrystalline silicon raw material of the difference amount of interpolation in the crucible 3 be heated, make its fusing, and the rational temperature field is stablized in formation in thermal field, can not only grow high-quality qualified monocrystalline, and save energy.Thermic devices of the present invention also has characteristics simple in structure, easy to use and that enhance productivity, is widely used in the growth of semiconductor silicon single crystal and germanium single crystal.
Claims (2)
1. the thermic devices of a growing silicon single crystal, it is characterized in that, the pedestal (8) that comprises hollow, A of travel mechanism (7) and the B of travel mechanism (9) have been arranged side by side in the pedestal (8), be connected with the working spaces (1) of hollow on the pedestal (8), be provided with the heat-preservation cylinder (2) that is fixed in bottom, working spaces (1) in the working spaces (1), the top of heat-preservation cylinder (2) is provided with insulation cover (14), vertically be provided with support bar (12) in the heat-preservation cylinder (2), the top of support bar (12) is connected with crucible (3), the A of travel mechanism (7) is fixedlyed connected with the lower end of the electrode A (5) that vertically is provided with, the A of travel mechanism (7) is provided with insulation covering A (6) with the junction of electrode A (5), the upper end of electrode A (5) is upward through pedestal (8) top and stretches in the heat-preservation cylinder (2), and it is affixed with well heater (4), well heater (4) is an annular, be positioned between crucible (3) and heat-preservation cylinder (2) sidewall, be provided with around crucible (3), the A of travel mechanism (7) drives well heater (4) by electrode A (5) and moves up and down, the B of travel mechanism (9) is fixedlyed connected with the lower end of the electrode B (11) that vertically is provided with, the upper end of electrode B (11) is upward through pedestal (8) top and stretches in the heat-preservation cylinder (2), and it is affixed with bottom heater (13), bottom heater (13) is positioned at the below of crucible (3), and the B of travel mechanism (9) drives bottom heater (13) by electrode B (11) and moves up and down.
2. according to the described thermic devices of claim 1, it is characterized in that the top of described bottom heater (13) is plate shaped or the awl dish type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910022094A CN101532172A (en) | 2009-04-17 | 2009-04-17 | Thermal device for growing silicon monocrystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910022094A CN101532172A (en) | 2009-04-17 | 2009-04-17 | Thermal device for growing silicon monocrystal |
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| Publication Number | Publication Date |
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| CN101532172A true CN101532172A (en) | 2009-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200910022094A Pending CN101532172A (en) | 2009-04-17 | 2009-04-17 | Thermal device for growing silicon monocrystal |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154699A (en) * | 2011-05-20 | 2011-08-17 | 吴晟 | Method for growing sapphire monocrystal and growth equipment |
| CN105369361A (en) * | 2015-12-03 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | Method and apparatus for preparing sapphire single crystals by moving thermal field |
| CN105531406A (en) * | 2013-10-29 | 2016-04-27 | 信越半导体株式会社 | Silicon single crystal puller |
| CN105887186A (en) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | Silicon single-crystal pulling equipment and growing method |
| CN107805782A (en) * | 2017-11-27 | 2018-03-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of evaporation coating device |
| CN110195254A (en) * | 2019-07-12 | 2019-09-03 | 中国电子科技集团公司第二十六研究所 | A kind of coil packaged type thermal field structure and method for monocrystal growth suitable for czochralski method |
| CN111424315A (en) * | 2020-05-18 | 2020-07-17 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace thermal field heater assembly and single crystal furnace |
-
2009
- 2009-04-17 CN CN200910022094A patent/CN101532172A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102154699A (en) * | 2011-05-20 | 2011-08-17 | 吴晟 | Method for growing sapphire monocrystal and growth equipment |
| CN102154699B (en) * | 2011-05-20 | 2013-05-22 | 吴晟 | Method for growing sapphire monocrystal and growth equipment |
| CN105531406A (en) * | 2013-10-29 | 2016-04-27 | 信越半导体株式会社 | Silicon single crystal puller |
| US9869034B2 (en) | 2013-10-29 | 2018-01-16 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal pulling apparatus comprising a vertically movable supporting member holding the heater and shield |
| CN105369361A (en) * | 2015-12-03 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | Method and apparatus for preparing sapphire single crystals by moving thermal field |
| CN105369361B (en) * | 2015-12-03 | 2018-04-10 | 河南西格马晶体科技有限公司 | A kind of thermal field movement prepares the method and device of sapphire monocrystal |
| CN105887186A (en) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | Silicon single-crystal pulling equipment and growing method |
| CN105887186B (en) * | 2016-05-30 | 2020-04-24 | 上海超硅半导体有限公司 | Silicon single crystal pulling apparatus and growth method |
| CN107805782A (en) * | 2017-11-27 | 2018-03-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of evaporation coating device |
| CN110195254A (en) * | 2019-07-12 | 2019-09-03 | 中国电子科技集团公司第二十六研究所 | A kind of coil packaged type thermal field structure and method for monocrystal growth suitable for czochralski method |
| CN110195254B (en) * | 2019-07-12 | 2022-08-12 | 中国电子科技集团公司第二十六研究所 | Coil movable temperature field structure suitable for Czochralski method and single crystal growth method |
| CN111424315A (en) * | 2020-05-18 | 2020-07-17 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace thermal field heater assembly and single crystal furnace |
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Open date: 20090916 |