CN202730297U - Czochralski method single crystal furnace thermal field structure - Google Patents
Czochralski method single crystal furnace thermal field structure Download PDFInfo
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- CN202730297U CN202730297U CN 201220396724 CN201220396724U CN202730297U CN 202730297 U CN202730297 U CN 202730297U CN 201220396724 CN201220396724 CN 201220396724 CN 201220396724 U CN201220396724 U CN 201220396724U CN 202730297 U CN202730297 U CN 202730297U
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- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004321 preservation Methods 0.000 claims abstract description 75
- 230000006835 compression Effects 0.000 claims description 29
- 238000007906 compression Methods 0.000 claims description 29
- 238000009413 insulation Methods 0.000 claims description 18
- 239000003351 stiffener Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
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Application Number | Priority Date | Filing Date | Title |
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CN 201220396724 CN202730297U (en) | 2012-08-06 | 2012-08-06 | Czochralski method single crystal furnace thermal field structure |
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CN 201220396724 CN202730297U (en) | 2012-08-06 | 2012-08-06 | Czochralski method single crystal furnace thermal field structure |
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CN202730297U true CN202730297U (en) | 2013-02-13 |
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CN 201220396724 Expired - Lifetime CN202730297U (en) | 2012-08-06 | 2012-08-06 | Czochralski method single crystal furnace thermal field structure |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106087037A (en) * | 2016-08-30 | 2016-11-09 | 成都晶九科技有限公司 | Crystal pull growth furnace temperature field structure and pulling growth technique thereof |
CN107761162A (en) * | 2017-10-31 | 2018-03-06 | 扬中市惠丰包装有限公司 | One kind is used for czochralski crystal growing furnace electricity-saving type heat shield structure |
CN108221044A (en) * | 2016-12-14 | 2018-06-29 | 有研半导体材料有限公司 | A kind of optimization temperature controlled thermal field layer structure of vertical pulling method |
CN110453277A (en) * | 2019-08-28 | 2019-11-15 | 包头美科硅能源有限公司 | A kind of Czochralski method mono-crystal furnace thermal field quickly cooling device and cooling means |
-
2012
- 2012-08-06 CN CN 201220396724 patent/CN202730297U/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106087037A (en) * | 2016-08-30 | 2016-11-09 | 成都晶九科技有限公司 | Crystal pull growth furnace temperature field structure and pulling growth technique thereof |
CN108221044A (en) * | 2016-12-14 | 2018-06-29 | 有研半导体材料有限公司 | A kind of optimization temperature controlled thermal field layer structure of vertical pulling method |
CN107761162A (en) * | 2017-10-31 | 2018-03-06 | 扬中市惠丰包装有限公司 | One kind is used for czochralski crystal growing furnace electricity-saving type heat shield structure |
CN110453277A (en) * | 2019-08-28 | 2019-11-15 | 包头美科硅能源有限公司 | A kind of Czochralski method mono-crystal furnace thermal field quickly cooling device and cooling means |
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Legal Events
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C53 | Correction of patent of invention or patent application | ||
C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN GOLD STONE TECHNOLOGY STOCK CO., LTD. Free format text: FORMER NAME: SHENZHEN GOLD STONE TECHNOLOGY CO., LTD. |
|
CB03 | Change of inventor or designer information |
Inventor after: Zhu Baixi Inventor after: Li Wenhong Inventor after: Feng Yinhui Inventor before: Feng Yinhui |
|
COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: FENG YINHUI TO: ZHU BAIXI LI WENHONG FENG YINHUI |
|
CP03 | Change of name, title or address |
Address after: Baoan District Songgang street, Shenzhen city 518105 Guangdong province with rich industrial zone safety run road No. 2 Patentee after: SHENZHEN GOLD STONE TECHNOLOGY Co.,Ltd. Address before: 518000, Shenzhen, Guangdong, Baoan District Fuyong Street on the south side of the first floor of Great Ocean Road 4, two floor East Patentee before: SHENZHEN GOLD STONE TECHNOLOGY Co.,Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20130213 |
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CX01 | Expiry of patent term |