CN202000023U - Thermal field for czochralski silicon monocrystalline furnace - Google Patents
Thermal field for czochralski silicon monocrystalline furnace Download PDFInfo
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- CN202000023U CN202000023U CN2011200558908U CN201120055890U CN202000023U CN 202000023 U CN202000023 U CN 202000023U CN 2011200558908 U CN2011200558908 U CN 2011200558908U CN 201120055890 U CN201120055890 U CN 201120055890U CN 202000023 U CN202000023 U CN 202000023U
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- heat
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- heat insulating
- thermal field
- crucible
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title abstract description 22
- 239000010703 silicon Substances 0.000 title abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 33
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000004321 preservation Methods 0.000 claims description 36
- 238000009413 insulation Methods 0.000 claims description 29
- 230000000694 effects Effects 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 16
- 239000007788 liquid Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a thermal field for a czochralski silicon monocrystalline furnace, which is provided with an upper heat insulating cover, an upper heat insulating layer, a thermal shield supporting ring and a heat insulating cylinder from top to bottom. A bottom heat insulating layer is arranged at the bottom of the thermal field. A supporting shaft is arranged in the thermal field. A crucible tray is arranged on the supporting shaft. A carbon-carbon crucible and a quartz crucible are sequentially arranged on the crucible tray. A heater is arranged between the heat insulating cylinder and the carbon-carbon crucible. The thermal shield supporting ring is connected with a thermal shield. The thermal shield comprises an inner layer and an outer layer. A carbon felt heat insulating layer is arranged between the inner layer and the outer layer. The thickness of the upper heat insulating layer is 20mm to 40mm. The distance between the inner diameter of the upper heat insulating cylinder and the inner diameter of the heater is 5mm to 10mm. The thickness of the bottom heat insulating layer is 100m to 140mm. By optimizing the structure of the thermal shield and adjusting a bottom heat insulating structure, the heat insulating effect of the monocrystalline furnace is improved, the distribution of the thermal field is improved, energy consumption is reduced, compared with the existing thermal field, the energy consumption can be reduced by approximately 30 percent and crystal growth speed is improved by 20 percent at the same time.
Description
Technical field
The utility model relates to a kind of czochralski crystal growing furnace thermal field.
Background technology
80% of semiconductor silicon single crystal body is with cutting krousky (Czochralski) method (being also referred to as vertical pulling method) manufacturing.According to vertical pulling method, the raw material polysilicon block is put into quartz crucible, in single crystal growing furnace, heat and dissolve, then, silicon solution is lowered the temperature a little, give certain condensate depression, again a diameter there is approximately the bar-shaped crystal seed of 10mm to immerse in the solution, under suitable temperature, the Siliciumatom in the solution can become monocrystalline along the crystallization of Siliciumatom arrangement architecture formation rule on solid-liquid interface of crystal seed.The rotation slight crystal seed upwards promotes, and the Siliciumatom in the solution can continue crystallization on single crystal, and continues its regular atomic arrangement structure.Strict crystallization control environment, the formation crystallization that just can go round and begin again by control pulling speed and solution temperature, can make crystal grow up to the close-target diameter, makes the growth of single crystal equal diameter.In the last stage of growth, the interior silicon melt not completely dissolve as yet of crucible this moment, by the heat supplied that increases the crystalline pulling speed and adjust in crucible crystal diameter is reduced to form a tail shape cone gradually, when sharp enough hour of cone, crystal will come off with melt, thereby finishes the crystalline process of growth.
Its process is broadly divided into: feed, find time, change material, seeding, shouldering, commentaries on classics shoulder, isodiametric growth, ending, crystal cooling etc., wherein major part is an endothermic process, needs outside heat supplied.Because about 1400 degrees centigrade of temperature of process need, stable hot environment, just apparent extremely important of the design of thermal field like this.Good thermal field can reduce thermosteresis, cuts down the consumption of energy, and grows colory silicon single crystal.
The utility model content
Technical problem to be solved in the utility model is: a kind of czochralski crystal growing furnace thermal field is provided, solves the high problem of existing single crystal growing furnace power consumption.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of czochralski crystal growing furnace with thermal field from top to bottom, last insulation cover is arranged, last thermal insulation layer, heat shielding support ring and heat-preservation cylinder, heat-preservation cylinder is divided into heat-preservation cylinder, middle heat-preservation cylinder and following heat-preservation cylinder, the thermal field bottom has the bottom thermal insulation layer, the thermal field center is provided with bolster, having the crucible pallet on the bolster, is carbon carbon crucible and quartz crucible successively on the crucible pallet, is provided with well heater between heat-preservation cylinder and the carbon carbon crucible, the heat shielding support ring is connected with heat shielding, heat shielding is inside and outside two-layer, and there is carbon felt thermofin the centre, and the thickness of last thermal insulation layer is 20～40mm, distance 5～10mm between last heat-preservation cylinder internal diameter and the well heater internal diameter, effectively weakened the make progress radiation of heat of well heater, the bottom insulation layer thickness is 100～140mm, strengthens the bottom heat insulation effect greatly.
Distance between carbon carbon crucible external diameter and the well heater internal diameter is 15～25mm, and the distance between well heater external diameter and the middle heat-preservation cylinder internal diameter is 10～15mm, and minimum place, the carbon felt thermofin upper end thickness of heat shielding is 5～10mm.
The beneficial effects of the utility model are: by optimizing the structure of heat shielding, increase the heat shielding thickness of interlayer, optimize the bottom thermal insulation layer, and the compression thermal field useful space; Reduced the heat-preservation cylinder internal diameter, increased insulation layer thickness, improved the heat insulation effect of single crystal growing furnace, improved thermal field and distribute, thereby reduced energy expenditure, this programme is compared existing thermal field energy consumption and has been reduced about 30%.Traditional relatively thermal field has superior temperature gradient distribution simultaneously, and long brilliant speed has also improved 20%.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified;
Fig. 1 is a structural representation of the present utility model;
Fig. 2 is a temperature gradient distribution comparison diagram on the crystal axis;
Fig. 3 is the temperature gradient distribution comparison diagram on the silicon melt axis;
Solid-liquid interface comparison diagram in Fig. 4 thermal field;
Among the figure, 1, go up insulation cover; 2, heat shielding support ring; 3, go up heat-preservation cylinder; 4, go up the heat-preservation cylinder support ring; 5, middle heat-preservation cylinder; 6, well heater; 7, middle heat-preservation cylinder support ring; 8, furnace hearth plate; 9, furnace bottom pressing plate; 10, internal heat shield; 11, outer heat shielding; 12, go up thermal insulation layer; 13, quartz crucible; 14, carbon carbon crucible; 15, crucible pallet; 16, bolster; 17, silicon solution; 18, silicon single crystal; 19, following heat-preservation cylinder.
Embodiment
As shown in Figure 1, this czochralski crystal growing furnace with thermal field from top to bottom, last insulation cover 1 is arranged, last thermal insulation layer 12, heat shielding support ring 2 and heat-preservation cylinder, heat-preservation cylinder is divided into heat-preservation cylinder 3, middle heat-preservation cylinder 5 and following heat-preservation cylinder 19, is last heat-preservation cylinder support ring 4 between last heat-preservation cylinder 3, the middle heat-preservation cylinder 5, is middle heat-preservation cylinder support ring 7 between middle heat-preservation cylinder 5 and following heat-preservation cylinder 19.Have the bottom thermal insulation layer in the thermal field bottom, the bottom thermal insulation layer is between furnace hearth plate 8 and furnace bottom pressing plate 9.The thermal field center is provided with bolster 16, has crucible pallet 15 on the bolster 16, is carbon carbon crucible 14 and quartz crucible 13 successively on the crucible pallet 15, the silicon solution 17 that quartz crucible 13 is used to hold the raw material polysilicon or dissolves.Have the bar-shaped crystal seed of 10mm to immerse in the silicon solution 17 approximately a diameter, under suitable temperature, the Siliciumatom in the solution can be along the crystallization of Siliciumatom arrangement architecture formation rule on solid-liquid interface of crystal seed.The rotation slight crystal seed upwards promotes, and the Siliciumatom in the solution can continue crystallization on single crystal, and continues its regular atomic arrangement structure, becomes silicon single crystal 18.Be provided with well heater 6 between heat-preservation cylinder and the carbon carbon crucible 14, heat shielding support ring 2 is connected with heat shielding, and described heat shielding is inside and outside two-layer, and there is carbon felt thermofin the centre.The inner ring place of heat shielding support ring 2 is provided with platform, and the platform place is provided with outer heat shielding 11, and the upper end of outer heat shielding 11 and internal heat shield 10 combine by screw.Heat shielding support ring 2 both sides are provided with fluting, are provided with thermal insulation layer 12 in the groove, and last thermal insulation layer 12 thickness 20～40mm is pressed with insulation cover 1 on the last thermal insulation layer 12.Distance 5～10mm between last heat-preservation cylinder 3 internal diameters and well heater 6 internal diameters has reduced the thermal radiation that well heater 6 makes progress, and the heat insulation effect in the stove is strengthened.Carbon carbon crucible 14 adopts carbon carbon composite, can reduce crucible thickness, makes air-flow more smooth and easy, and bottom insulation layer thickness 100～140mm has reduced the free space in the thermal field, makes the heat insulation effect in the stove better, reduces scattering and disappearing of heat.Distance between carbon carbon crucible 14 external diameters and well heater 6 internal diameters is 15～25mm, and the distance between well heater 6 external diameters and middle heat-preservation cylinder 5 internal diameters is 10～15mm, and minimum place, the carbon felt thermofin upper end thickness of heat shielding is 5～10mm.
This programme is because good top heat-insulation system and bottom heat-insulation system, make heat be limited in the effective space, traditional relatively thermal field reduces about watt consumption 45～47kw, and the crystal side at the solid-liquid interface place has higher thermograde, crystal forming rate is improved greatly, than traditional thermal field the higher speed of growth is arranged, thereby make growth cycle shorten, reach purpose of energy saving.
Below in conjunction with Fig. 2 and Fig. 3 the speed of growth is described, says in essence that vertical pulling method is in check (being a freely non-) crystal growing process.Its speed of growth can be described with following formula:
In the formula: V
Cry: the speed of growth (being exactly pull rate in first approximation)
ρ
Cry: the density of solid silicon
L: the heat of crystallization of silicon
K
s: the thermal conductivity of solid silicon
K
L: the thermal conductivity of liquid silicon
As can be seen from the above equation, the prime mover of crystal growth is from thermal field.Improve long brilliant speed and must 1. improve thermograde in the solid silicon; 2. reduce the thermograde in the liquid silicon.
Come as can be seen from Figure 2, the thermal field of this programme has higher thermograde than traditional thermal field in solid silicon; As can be seen from Figure 3, the thermal field of this programme has lower thermograde than traditional thermal field in liquid silicon.So this programme has the brilliant speed of higher length than traditional thermal field, reduce the advantage in cycle, the raising 20%. of actual test pulling rate illustrates the advantage of this programme from the solid-liquid interface angle below in conjunction with Fig. 4.On the basis of pulling rate raising 20%, the thermal field of this programme also has very smooth solid-liquid interface than traditional thermal field.
Claims (2)
1. czochralski crystal growing furnace thermal field, it is characterized in that: described thermal field from top to bottom, last insulation cover (1) is arranged, last thermal insulation layer (12), heat shielding support ring (2) and heat-preservation cylinder, heat-preservation cylinder is divided into heat-preservation cylinder (3), middle heat-preservation cylinder (5) and following heat-preservation cylinder (19), the thermal field bottom has the bottom thermal insulation layer, the thermal field center is provided with bolster (16), has crucible pallet (15) on the bolster (16), be carbon carbon crucible (14) and quartz crucible (13) successively on the crucible pallet (15), be provided with well heater (6) between heat-preservation cylinder and the carbon carbon crucible (14), heat shielding support ring (2) is connected with heat shielding, described heat shielding is inside and outside two-layer, and there is carbon felt thermofin the centre, it is characterized in that: the described thickness of going up thermal insulation layer (12) is 20～40mm, the described distance 5～10mm that goes up between heat-preservation cylinder (3) internal diameter and well heater (6) internal diameter, the bottom insulation layer thickness is 100～140mm.
2. czochralski crystal growing furnace thermal field according to claim 1, it is characterized in that: the distance between described carbon carbon crucible (14) external diameter and well heater (6) internal diameter is 15～25mm, distance between described well heater (6) external diameter and middle heat-preservation cylinder (5) internal diameter is 10～15mm, and minimum place, the carbon felt thermofin upper end thickness of described heat shielding is 5～10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200558908U CN202000023U (en) | 2011-03-05 | 2011-03-05 | Thermal field for czochralski silicon monocrystalline furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200558908U CN202000023U (en) | 2011-03-05 | 2011-03-05 | Thermal field for czochralski silicon monocrystalline furnace |
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| Publication Number | Publication Date |
|---|---|
| CN202000023U true CN202000023U (en) | 2011-10-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200558908U Expired - Fee Related CN202000023U (en) | 2011-03-05 | 2011-03-05 | Thermal field for czochralski silicon monocrystalline furnace |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087037A (en) * | 2016-08-30 | 2016-11-09 | 成都晶九科技有限公司 | Crystal pull growth furnace temperature field structure and pulling growth technique thereof |
| CN114481292A (en) * | 2020-11-12 | 2022-05-13 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski single crystal thermal field and repeated casting process for thermal field |
| CN114561692A (en) * | 2022-04-11 | 2022-05-31 | 麦斯克电子材料股份有限公司 | Method for improving temperature gradient of solid-liquid interface in growth of large-diameter monocrystalline silicon |
-
2011
- 2011-03-05 CN CN2011200558908U patent/CN202000023U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087037A (en) * | 2016-08-30 | 2016-11-09 | 成都晶九科技有限公司 | Crystal pull growth furnace temperature field structure and pulling growth technique thereof |
| CN114481292A (en) * | 2020-11-12 | 2022-05-13 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski single crystal thermal field and repeated casting process for thermal field |
| CN114561692A (en) * | 2022-04-11 | 2022-05-31 | 麦斯克电子材料股份有限公司 | Method for improving temperature gradient of solid-liquid interface in growth of large-diameter monocrystalline silicon |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111005 Termination date: 20190305 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |