CN202000023U - Thermal field for czochralski silicon monocrystalline furnace - Google Patents
Thermal field for czochralski silicon monocrystalline furnace Download PDFInfo
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- CN202000023U CN202000023U CN2011200558908U CN201120055890U CN202000023U CN 202000023 U CN202000023 U CN 202000023U CN 2011200558908 U CN2011200558908 U CN 2011200558908U CN 201120055890 U CN201120055890 U CN 201120055890U CN 202000023 U CN202000023 U CN 202000023U
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- heat
- carbon
- heat insulating
- thermal field
- crucible
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title abstract description 22
- 239000010703 silicon Substances 0.000 title abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 33
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000004321 preservation Methods 0.000 claims description 36
- 238000009413 insulation Methods 0.000 claims description 29
- 230000000694 effects Effects 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 16
- 239000007788 liquid Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011200558908U CN202000023U (en) | 2011-03-05 | 2011-03-05 | Thermal field for czochralski silicon monocrystalline furnace |
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CN2011200558908U CN202000023U (en) | 2011-03-05 | 2011-03-05 | Thermal field for czochralski silicon monocrystalline furnace |
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Publication Number | Publication Date |
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CN202000023U true CN202000023U (en) | 2011-10-05 |
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CN2011200558908U Expired - Fee Related CN202000023U (en) | 2011-03-05 | 2011-03-05 | Thermal field for czochralski silicon monocrystalline furnace |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106087037A (en) * | 2016-08-30 | 2016-11-09 | 成都晶九科技有限公司 | Crystal pull growth furnace temperature field structure and pulling growth technique thereof |
CN114481292A (en) * | 2020-11-12 | 2022-05-13 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski single crystal thermal field and repeated casting process for thermal field |
CN114561692A (en) * | 2022-04-11 | 2022-05-31 | 麦斯克电子材料股份有限公司 | Method for improving temperature gradient of solid-liquid interface in growth of large-diameter monocrystalline silicon |
-
2011
- 2011-03-05 CN CN2011200558908U patent/CN202000023U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106087037A (en) * | 2016-08-30 | 2016-11-09 | 成都晶九科技有限公司 | Crystal pull growth furnace temperature field structure and pulling growth technique thereof |
CN114481292A (en) * | 2020-11-12 | 2022-05-13 | 内蒙古中环协鑫光伏材料有限公司 | Czochralski single crystal thermal field and repeated casting process for thermal field |
CN114561692A (en) * | 2022-04-11 | 2022-05-31 | 麦斯克电子材料股份有限公司 | Method for improving temperature gradient of solid-liquid interface in growth of large-diameter monocrystalline silicon |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111005 Termination date: 20190305 |
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CF01 | Termination of patent right due to non-payment of annual fee |