CN202401160U - Czochralski crystal growing furnace - Google Patents
Czochralski crystal growing furnace Download PDFInfo
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- CN202401160U CN202401160U CN2011205732243U CN201120573224U CN202401160U CN 202401160 U CN202401160 U CN 202401160U CN 2011205732243 U CN2011205732243 U CN 2011205732243U CN 201120573224 U CN201120573224 U CN 201120573224U CN 202401160 U CN202401160 U CN 202401160U
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- crucible
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Abstract
The utility model discloses a Czochralski crystal growing furnace. The Czochralski crystal growing furnace comprises a crystal lifting motor, a crucible rotating motor, a furnace casing, a quartz crucible, a graphite crucible and a heater, wherein the crystal lifting motor is arranged at the upper end of the furnace casing, the crucible rotating motor is arranged at the bottom of the furnace casing, and the top of the crucible rotating motor, which is positioned in the furnace casing, is provided with a crucible tray; the quartz crucible, the graphite crucible and the heater, which are in sleeved connection from inside to outside in sequence, are arranged in the furnace casing; the heater is fixed at the bottom of the furnace casing; the graphite crucible is fixed on the crucible tray; and graphite paper is arranged between the quartz crucible and the graphite crucible. According to the Czochralski crystal growing furnace, the quartz crucible and the graphite crucible are separated by the graphite paper, and silicon monoxide directly erodes the graphite paper, so the direct erosion of the graphite crucible by the silicon monoxide and the quartz crucible is greatly lowered, the service life of the graphite crucible can be prolonged by approximately one to two times by periodically changing the graphite paper, and the production cost is greatly lowered.
Description
Technical field
The utility model relates to a kind of pulling of crystals growing apparatus, particularly czochralski crystal growing furnace.
Background technology
21 century, the world energy sources crisis has promoted the method cane in photovoltaic market, and crystal silicon solar energy battery also is the leading product of photovoltaic industry, accounts for 90% of the market share.Under the pulling of world market, China's solar energy power generating industry development is rapid, and China's solar cell YO 1% develops into more than 10% of world's share by what accounted for world's share originally.Compare with other crystal silicon solar energy battery, the transformation efficiency of monocrystaline silicon solar cell is higher, but its production cost is also high; Along with the further attention of countries in the world to solar energy industry; Particularly developed country has formulated a series of support policy and has encouraged development and use sun power, in addition, and along with the continuous expansion of silicon solar cell application surface; The demand of solar cell is increasing, and the demand of silicon single crystal material also just enlarges on year-on-year basis.
Silicon single crystal is a kind of semiconductor material, generally is used to make unicircuit and other electronic components, and the monocrystalline silicon growing technology has two kinds, zone melting method and vertical pulling method, and wherein vertical pulling method is the method that generally adopts at present.
In the method for Grown by CZ Method silicon single crystal, the high-purity polycrystalline raw material is put into the quartz crucible of monocrystalline silicon growing furnace, and then rough vacuum there is heat fused under the slumpability gas shield; Pack the silicon single crystal (being called seed crystal) that the direction of growth undetermined arranged in the seed crystal clamping device into, and seed crystal is contacted with silicon solution, the temperature of adjustment molten silicon solution; Make it near melting temperature, drive in the silicon solution that the bank up the roots of seedlings crystalline substance stretches into solution then from top to bottom and rotation, slowly upper lifting seed is brilliant then; Then monocrystalline silicon body gets into the growth of conical part; When the diameter of cone during near aimed dia, improve the pulling speed of seed crystal, the monocrystalline silicon body diameter is no longer increased and get into growth phase in the middle part of the crystalline; When the approaching end of monocrystalline silicon body growth; In the pulling speed that improves seed crystal, monocrystalline silicon body breaks away from molten silicon gradually, forms the lower cone face and finishes growth.The silicon single crystal that grows out in this way, it is shaped as the tapered right cylinder in two ends, with this right cylinder section, promptly obtains the silicon single crystal raw semiconductor, and this circular single crystal silicon chip just can be used as the material of unicircuit or sun power.
Pulling single crystal silicon need carry out in a whole set of hot system; In pulling process, be in low vacuum state; And constantly in single crystal growing furnace, charge into inert protective gas to take away since the crystallization latent heat that silicon single crystal distributes during crystallization from solution and the silicon monoxide particle of silicon solution evaporation from the venting port of single crystal growing furnace, get rid of then by vacuum pump.The traditional thermal field component of single crystal growing furnace consists essentially of furnace wall, well heater, plumbago crucible and quartz crucible etc., single crystal growing furnace when from venting port, discharging silicon monoxide by vacuum pump, the mixed gas of forming by silicon monoxide and the shielding gas parts such as plumbago crucible of will flowing through; Because plumbago crucible is a graphite product, and temperature is more than 1420 degree in the stove, and non-stop run is more than 30 hours; The silicon monoxide impurity in the single crystal growing furnace and the oxygen of quartz crucible become the reaction of branch and plumbago crucible with silicon, generate carbon monoxide, carbonic acid gas, silit etc.; Thereby cause erosion to plumbago crucible, simultaneously, the oxidizing reaction of quartz crucible and plumbago crucible contact part; Make Siliciumatom be penetrated into the top layer of plumbago crucible, form one deck silicon carbide layer, cause the crucible fracture; These all can reduce the work-ing life of plumbago crucible, increase production cost.
The utility model content
The purpose of the utility model is that a kind of czochralski crystal growing furnace that increases the service life through the protection plumbago crucible is provided for the deficiency that solves above-mentioned prior art.
To achieve these goals; The czochralski crystal growing furnace that the utility model designed comprises that crystal promotes motor, crucible rotary electric machine, furnace shell, quartz crucible, plumbago crucible and well heater, and crystal promotes motor and is arranged on the furnace shell upper end; The crucible rotary electric machine is arranged on the furnace shell bottom; The top that the crucible rotary electric machine is positioned at furnace shell is provided with the crucible pallet, quartz crucible, plumbago crucible and well heater three from inside to outside successively socket join structure place in the furnace shell, well heater is fixed on the furnace shell bottom; Plumbago crucible is fixed on the crucible supporting plate, it is characterized in that between quartz crucible and plumbago crucible, being lined with graphite paper.
Said structure is the cushioning graphite paper between plumbago crucible and quartz crucible, and plumbago crucible and quartz crucible are kept apart, and can reduce silicon monoxide and quartz crucible directly to the erosion of plumbago crucible, the work-ing life of having improved plumbago crucible greatly.
In order to promote serviceability, be glued with thermal insulation layer at the furnace shell inwall.
The czochralski crystal growing furnace that the utility model obtains, cushioning graphite paper between plumbago crucible and quartz crucible is kept apart plumbago crucible and quartz crucible; Adopt this structure; The direct erosive of silicon monoxide is a graphite paper, can reduce silicon monoxide and quartz crucible directly to the erosion of plumbago crucible, as long as regularly just can make and improve the work-ing life of plumbago crucible about one to two times with changing graphite paper; Also can reduce simultaneously the corrupted probability of quartz crucible, reduce production costs significantly; In addition, adopt this kind structure, features simple and practical process can be directly used in the prior art the single crystal furnace equipment.
Description of drawings
Fig. 1 is the one-piece construction synoptic diagram of embodiment 1;
Fig. 2 is the one-piece construction synoptic diagram of embodiment 2.
Among the figure: furnace shell 1, crystal promote motor 2, crucible rotary electric machine 3, crucible pallet 31, quartz crucible 4, graphite paper 45, plumbago crucible 5, well heater 6, thermal insulation layer 7.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Embodiment 1:
As shown in Figure 1; The czochralski crystal growing furnace that present embodiment provides comprises that crystal promotes motor 2, crucible rotary electric machine 3, furnace shell 1, quartz crucible 4, plumbago crucible 5 and well heater 6, and crystal promotes motor 2 and is installed in furnace shell 1 upper end; Crucible rotary electric machine 3 is installed in furnace shell 1 bottom; Crucible rotary electric machine 3 is positioned on the top of furnace shell 1 crucible pallet 31 is housed, quartz crucible 4, plumbago crucible 5 and well heater 6 threes from inside to outside successively socket join structure place in the furnace shell 1, well heater 6 is fixed on furnace shell 1 bottom; Plumbago crucible 5 installs on the crucible supporting plate 31, between quartz crucible 4 and plumbago crucible 5, is lined with graphite paper 45.
In the said structure, cushioning graphite paper 45 between plumbago crucible 5 and quartz crucible 4 is kept apart plumbago crucible 5 and quartz crucible 4; Adopt this structure; The direct erosive of silicon monoxide is a graphite paper 45, can reduce silicon monoxide and quartz crucible 4 directly to the erosions of plumbago crucible 5, as long as regularly just can make and improve the work-ing life of plumbago crucible 5 about one to two times with changing graphite paper 45; Also can reduce simultaneously the corrupted probability of quartz crucible 4, reduce production costs significantly; In addition, adopt this kind structure, features simple and practical process can be directly used in the prior art the single crystal furnace equipment.
Embodiment 2:
Czochralski crystal growing furnace as shown in Figure 2, that present embodiment provides, the gas general structure is consistent with embodiment 1, but in order to promote serviceability, is glued with one deck thermal insulation layer 7 at furnace shell 1 inwall.
Claims (2)
1. czochralski crystal growing furnace; Comprise that crystal promotes motor (2), crucible rotary electric machine (3), furnace shell (1), quartz crucible (4), plumbago crucible (5) and well heater (6); Crystal promotes motor (2) and is arranged on furnace shell (1) upper end; Crucible rotary electric machine (3) is arranged on furnace shell (1) bottom; The top that crucible rotary electric machine (3) is positioned at furnace shell (1) is provided with crucible pallet (31), quartz crucible (4), plumbago crucible (5) and well heater (6) three from inside to outside successively socket join structure place in the furnace shell (1), well heater (6) is fixed on furnace shell (1) bottom; Plumbago crucible (5) is fixed on the crucible supporting plate (31), it is characterized in that between quartz crucible (4) and plumbago crucible (5), being lined with graphite paper (45).
2. czochralski crystal growing furnace according to claim 1 is characterized in that being glued with thermal insulation layer (7) at furnace shell (1) inwall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205732243U CN202401160U (en) | 2011-12-31 | 2011-12-31 | Czochralski crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011205732243U CN202401160U (en) | 2011-12-31 | 2011-12-31 | Czochralski crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202401160U true CN202401160U (en) | 2012-08-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011205732243U Expired - Fee Related CN202401160U (en) | 2011-12-31 | 2011-12-31 | Czochralski crystal growing furnace |
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| CN (1) | CN202401160U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104911695A (en) * | 2015-06-04 | 2015-09-16 | 宁晋晶兴电子材料有限公司 | Silicon heating crucible with graphite paper interlayer |
| CN109665869A (en) * | 2019-01-29 | 2019-04-23 | 潍坊工商职业学院 | A kind of means of defence of graphite crucible |
-
2011
- 2011-12-31 CN CN2011205732243U patent/CN202401160U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104911695A (en) * | 2015-06-04 | 2015-09-16 | 宁晋晶兴电子材料有限公司 | Silicon heating crucible with graphite paper interlayer |
| CN109665869A (en) * | 2019-01-29 | 2019-04-23 | 潍坊工商职业学院 | A kind of means of defence of graphite crucible |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120829 Termination date: 20141231 |
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| EXPY | Termination of patent right or utility model |