CN105002557A - Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof - Google Patents
Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof Download PDFInfo
- Publication number
- CN105002557A CN105002557A CN201510492035.6A CN201510492035A CN105002557A CN 105002557 A CN105002557 A CN 105002557A CN 201510492035 A CN201510492035 A CN 201510492035A CN 105002557 A CN105002557 A CN 105002557A
- Authority
- CN
- China
- Prior art keywords
- gallium
- silicon
- boron
- germanium
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to gallium, germanium and boron co-doped polycrystalline silicon and a preparation method thereof, and belongs to the technical field of semiconductor material producing. The gallium, germanium and boron co-doped polycrystalline silicon is characterized in that three elements, namely gallium, boron and germanium are doped in monandocrystalline silicon, and the ultimate atomic volume concentration of gallium, boron and germanium is respectively 1.02*10<15>-1.02*10<17> atoms/cm<3>, 10<15>-10<17> atoms/cm<3>, and 10<16>-2*10<19> atoms/cm<3>. At the same time, the invention further discloses the method for preparing gallium, boron and germanium co-doped polycrystalline silicon. The gallium, germanium and boron co-doped polycrystalline silicon, provided by the invention, can greatly reduce or avoid production of a boron-oxygen compound body, can reduce the light degradation of batteries, and at the same time can improve the mechanical strength of silicon wafers; besides, the preparation method of the gallium, germanium and boron co-doped polycrystalline silicon is simple and convenient, easy to operate, low in cost and suitable for large-scale production.
Description
Technical field
The present invention relates generally to a kind of gallium germanium boron and mixes polysilicon and preparation method thereof altogether, belongs to semi-conducting material manufacturing technical field.
Background technology
Current solar cell is raw materials used based on crystalline silicon, and wherein, the silicon single crystal prepared by vertical pulling method has the high advantage of cell conversion rate, but its complicated operation and high expensive.In addition, the oxygen mixed in straight pulling process makes the photo attenuation of monocrystalline silicon battery obvious.Polycrystalline silicon ingot casting has easy and simple to handle, lower-cost advantage, but polysilicon exists photoelectric efficiency shortcoming on the low side; Meanwhile, no matter be silicon single crystal or polysilicon, the technical problem that the physical strength that all there is material has much room for improvement.
Optimize Si wafer quality by doping techniques, overcoming Defect is current comparatively effective solution.For this reason, people have carried out various trial and improvement, design the technical scheme that the doping of various silicon chip is optimized.
As being 201310249116.4 in application, disclosing the preparation method that a kind of boron gallium mixes polysilicon altogether in the Chinese invention patent application file that name is called " boron-gallium mixes efficient polycrystalline silicon and preparation method thereof altogether ", is 1*10 containing concentration
15~ 2*10
16atoms/cm
3boron or phosphorus, also containing concentration be 1*10
16~ 2*10
18atoms/cm
3gallium.This preparation method significantly reduces the photo attenuation of product polysilicon chip, but does not have solution for the problem that polycrystalline silicon battery plate physical strength is low.And for example: be 201410205422.2 at application number, name is called in the Chinese invention patent application file of " one mixes gallium polycrystal silicon ingot and preparation method thereof " and discloses a kind of preparation method mixing gallium polysilicon, containing 5 ~ 7ppm gallium, effectively reduce the problem that the photo attenuation rate that causes due to boron-doping is high.But the single cost mixing gallium is obviously higher.
Summary of the invention
The present invention is directed in prior art and improve by doping the above-mentioned technical problem existed in Si wafer quality, B-Ge-codoped polysilicon of a kind of gallium and preparation method thereof is provided, reduce solar cell photo attenuation, improve the physical strength of silicon chip.
For this reason, the present invention is by the following technical solutions:
The B-Ge-codoped polysilicon of a kind of gallium, is characterized in that: doped with gallium, boron, germanium three kinds of elements in polysilicon, and the atomic volume concentration final in silicon single crystal of these three kinds of elements is respectively: 1.02*10
15-1.02*10
17atoms/cm
3, boron 10
15-10
17atoms/cm
3, element Ge 10
16-2*10
19atoms/cm
3.
Meanwhile, the invention also discloses a kind of method preparing the B-Ge-codoped polysilicon of above-mentioned gallium, comprise the steps:
S1: seed crystal is laid on crucible bottom, add above silicon raw material, boracic material, containing gallium material and germanic material;
S2: the crucible that above-mentioned raw materials is housed is put into ingot furnace, opens the heat-insulation cage of ingot furnace simultaneously, vacuumizes heating, and make the silicon material of thawing start along seed crystal interface, bottom to solidify long crystalline substance, control temperature gradient, directional freeze generates boron gallium germanium and mixes polycrystal silicon ingot altogether;
S3: the many silicon single crystal ingots obtained in step S2 are processed into polysilicon through subsequent disposal, make for cell piece.
Further, the seed crystal described in step S1 is one or more in the expecting end to end of silicon raw material, silicon wafer material and pellet, or is high-melting-point silicon compound one or more, or is the mixture of silicon raw material and silicon compound.Herein, high-melting-point silicon compound refers to that the fusing point such as quartz sand, silicon carbide is greater than the silicon compound of silicon, and silicon raw material refers to pure silicon feedstock.
Further, in step S1, silicon material purity should be 6N and more than, the high purity elemental that described boracic material is selected the high purity elemental of more than 5N purity, selected the high purity elemental of more than 6N purity containing gallium material, more than 4N purity selected by germanic material, or the High Purity compound containing above-mentioned simple substance; Described boracic material, to take according to the atom number in every cubic centimetre of finished product single crystal silicon material containing the consumption of gallium material and germanic material, i.e. gallium element 1.02*10
15-1.02*10
17atoms/cm
3, boron 1*10
15-1*10
17atoms/cm
3, element Ge 1*10
16-2*10
19atoms/cm
3.
Further, described High Purity compound is gallium silicon alloy, borosilicate alloy, germanium-silicon alloy, gallium boron alloy, gallium germanium alloy, germanium gallium alloy, gallium boron germanium alloy or gallium boron germanium-silicon alloy.
Further, in step S2, control heater temperature is more than 1500 DEG C, and the top temperature controlling crucible bottom is lower than 1400 DEG C, and seed portion is melted, and controls bottom temperature rise rate.
Further, in step S3 as the thickness residue 5 ~ 15mm of seed crystal, control the well heater segmentation cooling of ingot furnace, regulate the thermograde of solid liquid phase, keep ingot casting in-furnace temperature between 1420 ~ 1450 DEG C, and open the heat abstractor in ingot furnace, make silicon crystal growth from seed crystal fusing interface, opened with 0.3 ~ 0.8cm/h speed by heat-proof device in ingot furnace, make silicon crystal realize oriented growth from bottom, cooling directional freeze generates boron gallium germanium and mixes polycrystal silicon ingot altogether.
Further, described in step S3, subsequent disposal comprises evolution, tail of decaptitating, grinding, chamfering and slicing process.
Compared with prior art, the present invention has following beneficial effect:
Boron gallium germanium in the present invention is mixed polysilicon altogether and be can be used for manufacturing high efficiency solar battery sheet, due to the effect that boron gallium in silicon crystal is mixed altogether, reduce or avoid the generation of boron oxygen complex body to a great extent, reduce the photo attenuation of battery, and germanium metal mix the physical strength significantly improving cell piece, be the ideal material of high efficiency solar cell; Meanwhile, the preparation method that boron gallium germanium provided by the invention mixes polysilicon is altogether easy, easy to operate, and cost is low to be produced on a large scale.
Embodiment
In order to make those skilled in the art person better understand the present invention program, below in conjunction with specific embodiment, clear, complete description is carried out to technical scheme of the present invention.
The B-Ge-codoped polysilicon of gallium of the present invention, doped with gallium, boron, germanium three kinds of elements in polysilicon, the atomic volume concentration final in silicon single crystal of these three kinds of elements is respectively: 1.02*10
15-1.02*10
17atoms/cm
3, boron 10
15-10
17atoms/cm
3, element Ge 10
16-2*10
19atoms/cm
3.
Another aspect of the present invention, provide a kind of method preparing the B-Ge-codoped polysilicon of above-mentioned gallium, specific embodiment is as follows:
Embodiment 1:
Silicon chip is laid on bottom quartz crucible as seed crystal, place silicon raw material in the above, borosilicate alloy, gallium and germanium metal, wherein, the consumption of gallium, germanium metal and borosilicate alloy takes according to the atom number in every cubic centimetre of finished product polycrystalline silicon material, i.e. gallium element 1.02*10
15-1.02*10
17atoms/cm
3, boron 10
15-10
17atoms/cm
3, element Ge 10
16-2*10
19atoms/cm
3.In the present embodiment, get 70g borosilicate alloy, 2.5g gallium and 230mg germanium metal, surplus is silicon raw material, and amount to 430kg, wherein, seed crystal is the purity >=6N of the material end to end of silicon raw material, silicon raw material.
Charged crucible is put into ingot furnace, vacuumizes heating, control heater power makes in-furnace temperature be increased to 1550 DEG C, enters the long brilliant stage when silicon material is melted to when residual altitude is about 18mm.At the long brilliant initial stage, temperature is reduced to 1430 DEG C, then opens heat-insulation cage, make silicon crystal first solidify long brilliant from seed crystal fusing interface.The long brilliant middle and later periods, with the rate of temperature fall control heater temperature of 1.2 DEG C/h, open heat-insulation cage with the speed of average 0.5cm/h and make silicon crystal directional solidification growth.The concentration obtaining boron in crystal after annealing cooling is 9.2*10
15-9*10
16atoms/cm
3, the concentration of gallium is 9.2*10
15-9*10
16atoms/cm
3, the concentration of germanium is 1*10
16-1*10
15atoms/cm
3, the polycrystal silicon ingot that obtained boron gallium germanium is mixed altogether.
Silicon ingot is through evolution, and segment, tail of decaptitating, grinding, chamfering, after section and cell piece make, average efficiency reaches 17.7%, is 60 kWh/m in irradiation
2under, photo attenuation rate is not more than 1%.
embodiment 2:
Silicon chip is laid on bottom quartz crucible as seed crystal, place silicon raw material in the above, borosilicate alloy, gallium and germanium metal, wherein, the consumption of gallium, germanium metal and borosilicate alloy takes according to the atom number in every cubic centimetre of finished product polycrystalline silicon material, i.e. gallium element 1.02*10
15-1.02*10
17atoms/cm
3, boron 10
15-10
17atoms/cm
3, element Ge 10
16-2*10
19atoms/cm
3.In the present embodiment, get 70g borosilicate alloy, 2.5g gallium, 230mg germanium metal, surplus is silicon raw material, and amount to 430kg, wherein, seed crystal is the purity >=6N of the material end to end of silicon raw material, silicon raw material.
Charged crucible is put into ingot furnace, vacuumizes heating, control heater power makes in-furnace temperature be increased to 1550 DEG C, enters the long brilliant stage when silicon material is melted to when residual altitude is about 18mm.At the long brilliant initial stage, temperature is reduced to 1430 DEG C, then opens heat-insulation cage, make silicon crystal first solidify long brilliant from seed crystal fusing interface.The long brilliant middle and later periods, with the rate of temperature fall control heater temperature of 1.2 DEG C/h, open heat-insulation cage with the speed of average 0.5cm/h and make silicon crystal directional solidification growth.The polycrystal silicon ingot that boron gallium germanium is mixed altogether is obtained after annealing cooling.
Silicon ingot is through evolution, and segment, tail of decaptitating, grinding, chamfering, after section and cell piece make, average efficiency reaches 17.7%, is 60 kWh/m in irradiation
2under, photo attenuation rate is not more than 0.5%.
Embodiment 3:
Be that the dislocation-free raw material of 20mm is mixed germanium single crystal silico briquette and is paved with crucible bottom by thickness, wherein the concentration of germanium is 8*10
19atoms/cm
3seed crystal is placed silicon raw material, mix the boron alloy of 50g and the gallium of 4.5g, then by the germanium block of 0.3g, amount to 430kg, the crucible of the silicon material that takes a turn for the better is put into ingot furnace, vacuumize and heat, control heater makes in-furnace temperature progressively be elevated to 1560 DEG C, and seed portion is melted, the residue about 17mm starting to melt when seed crystal is thick, jumps into the long brilliant stage by fusing.The long brilliant initial stage, fast temperature is dropped to 1440 DEG C by 1560 DEG C, start subsequently to open thermal baffle, silicon crystal is upwards grown from seed crystal fusing interface, and long brilliant mid-term, with the cooling rate control heater temperature of average 1.2 DEG C/h, thermal baffle is opened with the speed of average 0.5cm/h by colleague, silicon crystal will realize oriented growth from bottom, through annealing, obtain boron gallium germanium and mix polycrystal silicon ingot altogether after cooling.
Silicon ingot is through evolution, and segment, tail of decaptitating, grinding, chamfering, section and cell piece make, and its average efficiency reaches more than 17.7%, and getting boron gallium germanium and mix the decay of polycrystal silicon cell built-in testing altogether, is 60 kWh/m in irradiation
2lower display light induced attenuation <0.5%.
Embodiment 4:
Silicon chip is laid on bottom quartz crucible as seed crystal, place silicon raw material in the above, 90g borosilicate alloy, 5g gallium, 420g germanium metal, surplus is silicon raw material, amount to 800kg, charged crucible is put into ingot furnace, vacuumizes heating, control heater power makes in-furnace temperature be increased to 1540 DEG C, enters the long brilliant stage when silicon material is melted to when residual altitude is about 10mm.At the long brilliant initial stage, temperature is reduced to 1430 DEG C, then opens heat-insulation cage, make silicon crystal first solidify long brilliant from seed crystal fusing interface.The long brilliant middle and later periods, with the rate of temperature fall control heater temperature of 1.2 DEG C/h, open heat-insulation cage with the speed of average 0.5cm/h and make silicon crystal directional solidification growth.The concentration obtaining boron in crystal after annealing cooling is 9.2*10
15-9*10
16atoms/cm
3, the concentration of gallium is 9.2*10
15-9*10
16atoms/cm
3, the concentration of germanium is 1*10
19-2*10
19atoms/cm
3, the polycrystal silicon ingot that obtained boron gallium germanium is mixed altogether.
Silicon ingot is through evolution, and segment, tail of decaptitating, grinding, chamfering, after section and cell piece make, average efficiency reaches 17.7%, is 60 kWh/m in irradiation
2under, photo attenuation rate is not more than 1%.
Obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
Claims (8)
1. the B-Ge-codoped polysilicon of gallium, is characterized in that: doped with gallium, boron, germanium three kinds of elements in polysilicon, and the atomic volume concentration final in silicon single crystal of these three kinds of elements is respectively: gallium element 1.02*10
15-1.02*10
17atoms/cm
3, boron 10
15-10
17atoms/cm
3, element Ge 10
16-2*10
19atoms/cm
3.
2. prepare a method for the B-Ge-codoped polysilicon of gallium according to claim 1, comprise the steps:
S1: seed crystal is laid on crucible bottom, add above silicon raw material, boracic material, containing gallium material and germanic material;
S2: the crucible that above-mentioned raw materials is housed is put into ingot furnace, opens the heat-insulation cage of ingot furnace simultaneously, vacuumizes heating, and make the silicon material of thawing start along seed crystal interface, bottom to solidify long crystalline substance, control temperature gradient, directional freeze generates boron gallium germanium and mixes polycrystal silicon ingot altogether;
S3: the many silicon single crystal ingots obtained in step S2 are processed into polysilicon through subsequent disposal, make for cell piece.
3. prepare the method for the B-Ge-codoped polysilicon of gallium according to claim 2, it is characterized in that: the seed crystal described in step S1 is one or more in the expecting end to end of silicon raw material, silicon wafer material and pellet, or be one or more of high-melting-point silicon compound, or be the mixture of silicon raw material and silicon compound.
4. prepare the method for the B-Ge-codoped polysilicon of gallium according to claim 2, it is characterized in that: in step S1, silicon material purity should be 6N and more than, the high purity elemental that described boracic material is selected the high purity elemental of more than 5N purity, selected the high purity elemental of more than 6N purity containing gallium material, more than 4N purity selected by germanic material, or the High Purity compound containing above-mentioned simple substance; Described boracic material, to take according to the atom number in every cubic centimetre of finished product single crystal silicon material containing the consumption of gallium material and germanic material, i.e. gallium element 1.02*10
15-1.02*10
17atoms/cm
3, boron 1*10
15-1*10
17atoms/cm
3, element Ge 1*10
16-2*10
19atoms/cm
3.
5. prepare the method for the B-Ge-codoped polysilicon of gallium according to claim 4, it is characterized in that: described High Purity compound is gallium silicon alloy, borosilicate alloy, germanium-silicon alloy, gallium boron alloy, gallium germanium alloy, germanium gallium alloy, gallium boron germanium alloy or gallium boron germanium-silicon alloy.
6. prepare the method for the B-Ge-codoped polysilicon of gallium according to claim 2, it is characterized in that: in step S2, control heater temperature is more than 1500 DEG C, and the top temperature controlling crucible bottom is lower than 1400 DEG C, makes seed portion melt, control bottom temperature rise rate.
7. prepare the method for the B-Ge-codoped polysilicon of gallium according to claim 2, it is characterized in that: in step S3 as the thickness residue 5 ~ 15mm of seed crystal, control the well heater segmentation cooling of ingot furnace, regulate the thermograde of solid liquid phase, keep ingot casting in-furnace temperature between 1420 ~ 1450 DEG C, and the heat abstractor opened in ingot furnace, make silicon crystal growth from seed crystal fusing interface, heat-proof device in ingot furnace is opened with 0.3 ~ 0.8cm/h speed, make silicon crystal realize oriented growth from bottom, cooling directional freeze generates boron gallium germanium and mixes polycrystal silicon ingot altogether.
8. prepare the method for the B-Ge-codoped polysilicon of gallium according to claim 2, it is characterized in that: described in step S3, subsequent disposal comprises evolution, tail of decaptitating, grinding, chamfering and slicing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510492035.6A CN105002557A (en) | 2015-08-12 | 2015-08-12 | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510492035.6A CN105002557A (en) | 2015-08-12 | 2015-08-12 | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105002557A true CN105002557A (en) | 2015-10-28 |
Family
ID=54375407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510492035.6A Pending CN105002557A (en) | 2015-08-12 | 2015-08-12 | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105002557A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105821474A (en) * | 2016-04-13 | 2016-08-03 | 江西赛维Ldk太阳能高科技有限公司 | Preparation method of crystalline silicon and crystalline silicon |
| CN106222742A (en) * | 2016-09-12 | 2016-12-14 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crystalline silicon and preparation method thereof |
| CN109082643A (en) * | 2018-09-04 | 2018-12-25 | 大连理工大学 | A kind of arsenic, P elements are co-doped with the casting technique for preparing N-shaped polycrystalline silicon target |
| CN110965121A (en) * | 2019-12-31 | 2020-04-07 | 宁晋晶兴电子材料有限公司 | Low-attenuation polycrystalline silicon and preparation method thereof |
| CN114044677A (en) * | 2021-11-04 | 2022-02-15 | 大连理工大学 | Silicon-boron master alloy for sputtering target material and preparation method thereof |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02267195A (en) * | 1989-04-05 | 1990-10-31 | Nippon Steel Corp | Silicon single crystal excellent in withstand voltage characteristic of oxide film and production thereof |
| CN1688015A (en) * | 2005-04-11 | 2005-10-26 | 浙江大学 | P/P+ silicon epitaxial wafer using Ge-B doped straight drawing silicone wafer as substrate |
| CN1995487A (en) * | 2006-11-30 | 2007-07-11 | 浙江大学 | Germanium-doped directional solidification casting polycrystalline silicon |
| CN101591808A (en) * | 2009-06-24 | 2009-12-02 | 浙江大学 | Mix directionally solidified casting monocrystalline silicon of germanium and preparation method thereof |
| CN101597794A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | The czochralski silicon monocrystal that a kind of gallium and germanium are mixed altogether |
| CN101654804A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Method for controlling specific resistance of gallium-doped Czochralski silicon in crystal growth process |
| CN102400219A (en) * | 2011-11-30 | 2012-04-04 | 东海晶澳太阳能科技有限公司 | Boron-gallium co-doped quasi-monocrystalline silicon and preparation method thereof |
| CN102828243A (en) * | 2012-09-06 | 2012-12-19 | 西安隆基硅材料股份有限公司 | Germanium-tin co-doped monocrystalline silicon for solar cell and method for preparing same |
| CN102978698A (en) * | 2012-11-16 | 2013-03-20 | 孙新利 | Growing and doping method for heavy doped P-type monocrystalline silicon with boron and gallium codoped |
| CN102978699A (en) * | 2012-11-16 | 2013-03-20 | 孙新利 | Growth of boron and gallium co-doped heavy doped p-type monocrystalline silicon and doping method thereof |
| CN103361724A (en) * | 2013-06-21 | 2013-10-23 | 东海晶澳太阳能科技有限公司 | Boron-gallium codoped high-efficiency polycrystalline silicon and preparation method thereof |
| CN104124292A (en) * | 2013-04-23 | 2014-10-29 | 晶澳太阳能有限公司 | Boron-gallium codoping monocrystalline silicon piece and preparation method thereof, and solar cell |
| CN105019022A (en) * | 2015-08-12 | 2015-11-04 | 常州天合光能有限公司 | Quasi mono-crystalline silicon co-doped with gallium, germanium and boron and preparing method thereof |
-
2015
- 2015-08-12 CN CN201510492035.6A patent/CN105002557A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02267195A (en) * | 1989-04-05 | 1990-10-31 | Nippon Steel Corp | Silicon single crystal excellent in withstand voltage characteristic of oxide film and production thereof |
| CN1688015A (en) * | 2005-04-11 | 2005-10-26 | 浙江大学 | P/P+ silicon epitaxial wafer using Ge-B doped straight drawing silicone wafer as substrate |
| CN1995487A (en) * | 2006-11-30 | 2007-07-11 | 浙江大学 | Germanium-doped directional solidification casting polycrystalline silicon |
| CN101591808A (en) * | 2009-06-24 | 2009-12-02 | 浙江大学 | Mix directionally solidified casting monocrystalline silicon of germanium and preparation method thereof |
| CN101597794A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | The czochralski silicon monocrystal that a kind of gallium and germanium are mixed altogether |
| CN101654804A (en) * | 2009-09-24 | 2010-02-24 | 浙江大学 | Method for controlling specific resistance of gallium-doped Czochralski silicon in crystal growth process |
| CN102400219A (en) * | 2011-11-30 | 2012-04-04 | 东海晶澳太阳能科技有限公司 | Boron-gallium co-doped quasi-monocrystalline silicon and preparation method thereof |
| CN102828243A (en) * | 2012-09-06 | 2012-12-19 | 西安隆基硅材料股份有限公司 | Germanium-tin co-doped monocrystalline silicon for solar cell and method for preparing same |
| CN102978698A (en) * | 2012-11-16 | 2013-03-20 | 孙新利 | Growing and doping method for heavy doped P-type monocrystalline silicon with boron and gallium codoped |
| CN102978699A (en) * | 2012-11-16 | 2013-03-20 | 孙新利 | Growth of boron and gallium co-doped heavy doped p-type monocrystalline silicon and doping method thereof |
| CN104124292A (en) * | 2013-04-23 | 2014-10-29 | 晶澳太阳能有限公司 | Boron-gallium codoping monocrystalline silicon piece and preparation method thereof, and solar cell |
| CN103361724A (en) * | 2013-06-21 | 2013-10-23 | 东海晶澳太阳能科技有限公司 | Boron-gallium codoped high-efficiency polycrystalline silicon and preparation method thereof |
| CN105019022A (en) * | 2015-08-12 | 2015-11-04 | 常州天合光能有限公司 | Quasi mono-crystalline silicon co-doped with gallium, germanium and boron and preparing method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105821474A (en) * | 2016-04-13 | 2016-08-03 | 江西赛维Ldk太阳能高科技有限公司 | Preparation method of crystalline silicon and crystalline silicon |
| CN106222742A (en) * | 2016-09-12 | 2016-12-14 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crystalline silicon and preparation method thereof |
| CN106222742B (en) * | 2016-09-12 | 2019-01-29 | 江西赛维Ldk太阳能高科技有限公司 | A kind of crystalline silicon and preparation method thereof |
| CN109082643A (en) * | 2018-09-04 | 2018-12-25 | 大连理工大学 | A kind of arsenic, P elements are co-doped with the casting technique for preparing N-shaped polycrystalline silicon target |
| CN109082643B (en) * | 2018-09-04 | 2020-09-29 | 大连理工大学 | Casting process for preparing n-type polycrystalline silicon target material by co-doping arsenic and phosphorus elements |
| CN110965121A (en) * | 2019-12-31 | 2020-04-07 | 宁晋晶兴电子材料有限公司 | Low-attenuation polycrystalline silicon and preparation method thereof |
| CN114044677A (en) * | 2021-11-04 | 2022-02-15 | 大连理工大学 | Silicon-boron master alloy for sputtering target material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104124292B (en) | Boron and gallium co-doped monocrystalline silicon piece and preparation method thereof and solar cell | |
| CN101591808A (en) | Mix directionally solidified casting monocrystalline silicon of germanium and preparation method thereof | |
| CN105002557A (en) | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof | |
| CN102400219A (en) | Boron-gallium co-doped quasi-monocrystalline silicon and preparation method thereof | |
| CN101864594A (en) | Ingot casting method for quasi-monocrystalline silicon | |
| CN103469293A (en) | Preparation method of polycrystalline silicon | |
| CN105019022A (en) | Quasi mono-crystalline silicon co-doped with gallium, germanium and boron and preparing method thereof | |
| CN102304757A (en) | Method for preparing 6-inch P-type solar silicon single crystals through Czochralski method and zone melting method | |
| CN101560693A (en) | Preparation method of solar-grade silicon crystal containing doping elements | |
| CN103361724A (en) | Boron-gallium codoped high-efficiency polycrystalline silicon and preparation method thereof | |
| CN102206857A (en) | 111 crystal orientation cast silicon monocrystal and preparation method thereof | |
| CN101435105A (en) | Method for preparing low oxygen content silicon crystal | |
| CN101694008A (en) | Gallium-doped metallic silicon and directional solidification casting method thereof | |
| CN102899720B (en) | Ingot casting method for efficient polycrystalline silicon | |
| CN101545134B (en) | Method and device for preparing high-purity single crystal silicon bar by utilizing silicon material containing impurities | |
| CN106222742B (en) | A kind of crystalline silicon and preparation method thereof | |
| CN101597787B (en) | Method for casting nitrogen-doped monocrystalline silicon with controllable nitrogen concentration under nitrogen | |
| CN102703965A (en) | Method for reducing crystal defects of ingot-casting silicon single crystal | |
| CN101591807A (en) | Directionally solidified casting monocrystalline silicon of nitrating and preparation method thereof | |
| CN201058893Y (en) | Device for growing gallium-doped silicon monocrystal by czochralski method | |
| CN103074669B (en) | Polycrystalline silicon ingot, preparation method thereof and polycrystalline silicon chip | |
| CN105063750A (en) | Ga-Ge-B co-doped monocrystalline silicon and preparation method thereof | |
| CN103014850A (en) | Novel polycrystalline silicon ingot casting device and ingot casting method thereof | |
| CN103526290A (en) | Preparation method of polycrystalline silicon cast ingot | |
| CN101864593B (en) | N-doped crystalline silicon and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151028 |
|
| RJ01 | Rejection of invention patent application after publication |