CN1995487A - Germanium-doped directional solidification casting polycrystalline silicon - Google Patents
Germanium-doped directional solidification casting polycrystalline silicon Download PDFInfo
- Publication number
- CN1995487A CN1995487A CN 200610154949 CN200610154949A CN1995487A CN 1995487 A CN1995487 A CN 1995487A CN 200610154949 CN200610154949 CN 200610154949 CN 200610154949 A CN200610154949 A CN 200610154949A CN 1995487 A CN1995487 A CN 1995487A
- Authority
- CN
- China
- Prior art keywords
- germanium
- polycrystalline silicon
- casting polycrystalline
- silicon
- directional solidification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 28
- 238000005266 casting Methods 0.000 title claims abstract description 27
- 238000007711 solidification Methods 0.000 title claims description 13
- 230000008023 solidification Effects 0.000 title claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 25
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 25
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 239000002994 raw material Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a directional solidifying and casting method of polysilicon with doped germanium, which is characterized by the following: possessing certain density phosphor or boron with density at 1*1015-1*1017 /cm3 as well as germanium with density at 1*1016-1*1019/cm3; improving mechanic strength of polysilicon; fitting for making solar battery.
Description
Technical field
The present invention relates to a kind of casting polycrystalline silicon, especially the directional solidification casting polycrystalline silicon of doped germanium.
Background technology
Sun power is inexhaustible clear energy sources, utilizes the light transfer characteristic of semiconductor material, is prepared into solar cell, sun power can be transformed into electric energy.
Directional solidification casting polycrystalline silicon is a kind of main raw of solar cell, and influencing the widely used major obstacle of solar cell is that cost is higher, and the prime cost of battery is at silicon chip.In order to reduce cost, the measure of taking now is the thickness that reduces silicon chip, makes the material usage of each sheet silicon chip reduce, and still, the casting polycrystalline silicon that generally uses at present is to mix phosphorus or boron-doping concentration is 1 * 10
15～1 * 10
17/ cm
3Casting polycrystalline silicon, its shortcoming is that physical strength is lower, if reduce silicon wafer thickness, silicon chip is dressed up in the process such as assembly in processing, cell preparation or series of cells, damage, fragmentation easily, the silicon chip breakage rate increases, and certainly will cause the increase of cost.
Summary of the invention
The directional solidification casting polycrystalline silicon that the purpose of this invention is to provide a kind of doped germanium of high mechanical strength.
The directional solidification casting polycrystalline silicon of doped germanium of the present invention, containing concentration is 1 * 10
15～1 * 10
17/ cm
3Phosphorus or boron, it is characterized in that also containing concentration is 1 * 10
16～1 * 10
19/ cm
3Germanium.
The preparation method of the directional solidification casting polycrystalline silicon of doped germanium is as follows:
1) the silicon raw material is placed crucible, add phosphorus or boron and germanium, shove charge by doping content;
2) furnace chamber is evacuated, adds or do not add protection gas, the silicon raw material is heated to 1420 ℃～1450 ℃ gradually, all be fused into liquid until the silicon raw material;
3) by directional freeze, make silicon crystallization gradually from the bottom to top of fusing, form directional solidification casting polycrystalline silicon.
Above-mentioned germanium is meant that purity is at elemental Germanium more than 95% or germanium-silicon alloy.Directional freeze can realize by adjusting crucible position, stay-warm case position or thermal field.
Beneficial effect of the present invention is:
1. add germanium in casting polycrystalline silicon, utilize germanium can follow closely the character of dislocation raising physical strength in the assorted silicon, can strengthen the physical strength of casting polycrystalline silicon, silicon chip can be thinner like this, is used for solar cell, can significantly reduce cost.
2. on the basis of mixing phosphorus or boron casting polycrystalline silicon originally, mix a certain amount of germanium, germanium mix the electric property that does not influence casting polycrystalline silicon.
3. preparation technology is simple, and is easy to operate.
Embodiment
Further specify the present invention below in conjunction with embodiment.
Embodiment 1
The silicon raw material of 240kg is placed crucible, mix the doping agent boron of 20mg, the purity that adds 350mg is 99.999% germanium, realizes shove charge.Then furnace chamber is evacuated, uses Ar gas as protection gas.Again the silicon raw material is heated to 1440 ℃ gradually, all is fused into liquid until the silicon raw material.By promoting stay-warm case position and directional freeze, make silicon crystallization gradually from the bottom to top of fusing, form boron concentration and be about 9.5 * 10
15/ cm
3, germanium concentration is about 1 * 10
16/ cm
3Directional solidification casting polycrystalline silicon.
The room temperature fracture physical strength of the directional solidification casting polycrystalline silicon of this routine doped germanium is about 130N/mm
2, and only the room temperature of the casting polycrystalline silicon of boron-doping fracture physical strength is about 110N/mm
2, the casting polycrystalline silicon physical strength of mixing a casting polycrystalline silicon ratio boron-doping of germanium increases about 18%.
Embodiment 2
The silicon raw material of 240kg is placed crucible, mix the doping agent boron of 20mg, the purity that adds 350g is 99.9999% germanium, realizes shove charge.Then furnace chamber is evacuated, uses Ar gas as protection gas.Again the silicon raw material is heated to 1440 ℃ gradually, all is fused into liquid until the silicon raw material.By promoting stay-warm case position and directional freeze, make silicon crystallization gradually from the bottom to top of fusing, form boron concentration and be about 9.5 * 10
15/ cm
3, germanium concentration is about 1 * 10
19/ cm
3Directional solidification casting polycrystalline silicon.
The room temperature fracture physical strength of the directional solidification casting polycrystalline silicon of this routine doped germanium is about 145N/mm
2, and only the room temperature of the casting polycrystalline silicon of boron-doping fracture physical strength is about 110N/mm
2, the casting polycrystalline silicon physical strength of mixing a casting polycrystalline silicon ratio boron-doping of germanium increases about 30%.
Claims (1)
1. the directional solidification casting polycrystalline silicon of a doped germanium, containing concentration is 1 * 10
15～1 * 10
17/ cm
3Phosphorus or boron, it is characterized in that also containing concentration is 1 * 10
16～1 * 10
19/ cm
3Germanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101549492A CN100570020C (en) | 2006-11-30 | 2006-11-30 | A kind of directional solidification casting polycrystalline silicon of doped germanium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101549492A CN100570020C (en) | 2006-11-30 | 2006-11-30 | A kind of directional solidification casting polycrystalline silicon of doped germanium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1995487A true CN1995487A (en) | 2007-07-11 |
| CN100570020C CN100570020C (en) | 2009-12-16 |
Family
ID=38250687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101549492A Expired - Fee Related CN100570020C (en) | 2006-11-30 | 2006-11-30 | A kind of directional solidification casting polycrystalline silicon of doped germanium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100570020C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101307487B (en) * | 2007-05-16 | 2010-05-19 | 佳科太阳能硅(厦门)有限公司 | Directional solidification method and its device for continuous production for polycrystalline silicon ingot |
| CN101597788B (en) * | 2009-06-24 | 2011-12-07 | 浙江大学 | Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen |
| CN102534772A (en) * | 2012-02-28 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | Method for growing large-grain cast polycrystalline silicon |
| CN103590104A (en) * | 2010-03-12 | 2014-02-19 | 厦门大学 | Zinc electrolytic recovery processing method |
| CN105002557A (en) * | 2015-08-12 | 2015-10-28 | 常州天合光能有限公司 | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof |
-
2006
- 2006-11-30 CN CNB2006101549492A patent/CN100570020C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101307487B (en) * | 2007-05-16 | 2010-05-19 | 佳科太阳能硅(厦门)有限公司 | Directional solidification method and its device for continuous production for polycrystalline silicon ingot |
| CN101597788B (en) * | 2009-06-24 | 2011-12-07 | 浙江大学 | Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen |
| CN103590104A (en) * | 2010-03-12 | 2014-02-19 | 厦门大学 | Zinc electrolytic recovery processing method |
| CN102534772A (en) * | 2012-02-28 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | Method for growing large-grain cast polycrystalline silicon |
| CN102534772B (en) * | 2012-02-28 | 2014-11-05 | 江苏协鑫硅材料科技发展有限公司 | Method for growing large-grain cast polycrystalline silicon |
| CN105002557A (en) * | 2015-08-12 | 2015-10-28 | 常州天合光能有限公司 | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100570020C (en) | 2009-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103966665B (en) | One mixes gallium polycrystal silicon ingot and preparation method thereof | |
| ES2377343T3 (en) | Procedure to control the resistivity in ingots made of silicon compensated feed load | |
| CN102560641B (en) | N-type casting policrystalline silicon with uniform doping resistivity and preparation method thereof | |
| CN101654805B (en) | Preparation method of casting polysilicon with large crystal grains in single crystal direction | |
| CN101591808A (en) | Mix directionally solidified casting monocrystalline silicon of germanium and preparation method thereof | |
| CN100570020C (en) | A kind of directional solidification casting polycrystalline silicon of doped germanium | |
| CN101845666B (en) | N-doped crystalline silicon and preparation method thereof | |
| CN101597790B (en) | Method for preparing cast polycrystalline silicon through melting silicon and doping nitrogen under nitrogen | |
| NO333319B1 (en) | Silicon material for the production of solar cells | |
| CN102206857A (en) | 111 crystal orientation cast silicon monocrystal and preparation method thereof | |
| CN103361724A (en) | Boron-gallium co-doped efficient polycrystalline silicon and preparation method thereof | |
| CN102560646B (en) | N-type casting monocrystalline silicon with uniform doping resistivity and preparation method thereof | |
| CN104532345A (en) | Manufacturing method of polycrystalline silicon cast ingot and polycrystalline silicon cast ingot | |
| CN103739201A (en) | Medium-temperature SOFC sealing microcrystalline glass, and preparation method and application method thereof | |
| CN102605418A (en) | Solar cell substrate, manufacturing method of solar cell and crucible used for same | |
| CN101864593B (en) | N-doped crystalline silicon and preparation method thereof | |
| CN110615675B (en) | High-room-temperature ionic conductivity sodium ion conductor and preparation method thereof | |
| CN105002557A (en) | Gallium, germanium and boron co-doped polycrystalline silicon and preparation method thereof | |
| CN105019022A (en) | Quasi mono-crystalline silicon co-doped with gallium, germanium and boron and preparing method thereof | |
| CN102443853B (en) | Preparation method of rare earth ion-doped large lead tungstate crystal | |
| CN101876085A (en) | Polycrystalline silicon ingot and preparation method thereof | |
| NO322246B1 (en) | Process for preparing directed solidified silicon ingots | |
| CN103274583B (en) | Quartz crucible and preparation method thereof, P-type silicon ingot casting and preparation method thereof | |
| CN102515550B (en) | Near-infrared quantum-cutting down-conversion luminescent transparent glass ceramic and preparation method thereof | |
| CN101597792A (en) | Under nitrogen, cast the method for the controlled doped polysilicon of nitrogen concentration |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091216 |