CN104372407B - A kind of crystalline silicon directional solidification growth equipment and method - Google Patents
A kind of crystalline silicon directional solidification growth equipment and method Download PDFInfo
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- CN104372407B CN104372407B CN201410666111.6A CN201410666111A CN104372407B CN 104372407 B CN104372407 B CN 104372407B CN 201410666111 A CN201410666111 A CN 201410666111A CN 104372407 B CN104372407 B CN 104372407B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
Abstract
The invention discloses a kind of crystalline silicon directional solidification growth equipment, including thawing furnace chamber, melt furnace chamber upper end and be provided with charging aperture, it is provided with material inlet valve at charging aperture, the lower end of material inlet valve and be provided with melting pot positioned at thawing furnace interior, melting pot is formed around heater one, in the middle part of melting pot, lower end is provided with silicon liquid flow ports, silicon liquid flow ports region is provided with silicon liquid flow control valve or silicon liquid flow-control bar, silicon liquid flow ports lower end is provided with silicon liquid sprinkler, it is provided with silicon ingot directional solidification system below silicon liquid sprinkler, directional solidification system includes controlling thermograde heater, it is arranged on the silicon ingot below heater and support pallet and the electromagnetic inductor in order to constrain liquid-state silicon.Beneficial effects of the present invention are：By this device and technology so that silicon material is melted and crystal growth is carried out simultaneously, greatly reduce energy consumption, and reduce production cost, there is high crystal growth rate, effectively raise production efficiency, be conducive to popularization and the application in market.
Description
Technical field
The present invention relates to photovoltaic polycrystalline cast ingot field, particularly to a kind of crystalline silicon directional solidification growth equipment and
Method.
Background technology
Since human society enters industrial civilization, the demand for the energy is growing, with technological progress and population
Increase, mankind's energy demand exponentially level increases；In the evolution of the past industrialized society of 200 years about, the mankind's
The energy mostlys come from the non-renewable fossil energy such as oil, coal and natural gas.In recent years, the drawbacks of fossil energy by
Step shows, the finiteness of fossil energy resource leads to the reserves of fossil energy will be exhausted by the mankind in coming few decades,
In addition, the large-scale use of fossil energy also causes the negative effect being difficult to reverse to human environment.
Under the energy background of our times, the mankind start the alternative energy of development and utilization, therefore solar energy, wind energy
Become mankind's focus of attention etc. emerging regenerative resource.Solar energy power generating, the sustainability of its energy and to environment
Friendly the advantages of prominent, in this century fast development in recent ten years, cost of electricity-generating moves closer to traditional fossil energy institute
The electric power producing, and visible future can reduces cost further, more competing than traditional energy more has in energy field acquisition
Strive the status of power.
Sunlight is mainly switched to electric energy, crystalline silicon using crystal silicon solar battery component by solar energy power generating at present
Solaode has polysilicon and two kinds of monocrystal silicon by substrate, and wherein polysilicon is using the ingot casting polycrystalline based on directional solidification technique
Crystal growth technology, monocrystal silicon mainly includes pulling of silicon single crystal and zone melting single-crystal technology；Ingot casting polycrystalline has low cost, Gao Sheng
The advantage producing efficiency, but the presence due to defects such as dislocations, crystal mass is less than monocrystalline；Monocrystalline be mainly characterized by crystal mass
Good, but production cost is high, low production efficiency is unfavorable for large-scale production.
For the problem in correlation technique, effective solution is not yet proposed at present.
Content of the invention
It is an object of the invention to provide a kind of crystalline silicon directional solidification growth equipment and method, can be used for crystalline silicon orientation solidifying
Gu growth, the purification of silicon materials directional solidification, and the directional solidification growth of monocrystal silicon.This utility model be capable of high-quality,
High efficiency, the crystal growth of low cost, contribute to the pursuit that solar energy industry is laid equal stress on for low cost and high-quality, have
Effect overcomes currently available technology above shortcomings.
The purpose of the present invention is to be achieved through the following technical solutions：
A kind of crystalline silicon directional solidification growth equipment, including melting furnace chamber, described thawing furnace chamber upper end is provided with charging aperture, institute
State and at charging aperture, be provided with the material inlet valve matching, the lower end of described material inlet valve and be provided with melt positioned at described thawing furnace interior
Crucible, described melting pot is formed around heater one, and is provided with silicon liquid flowing positioned at the middle part lower end of described melting pot
Mouthful, described silicon liquid flow ports region is provided with the silicon liquid flow control valve matching or silicon liquid flow-control bar, and described silicon liquid
Flow ports lower end is provided with silicon liquid sprinkler, is provided with the silicon ingot directional solidification system matching below described silicon liquid sprinkler；Described
Silicon ingot directional solidification system includes the heater two being arranged between described silicon liquid flow ports and silicon liquid sprinkler, and described silicon
Liquid sprinkler lower end is provided with silicon ingot and supports pallet, and described silicon ingot supports pallet surrounding to be surrounded with electromagnetic inductor；And it is described
The electromagnetic force of electromagnetic inductor supports the silicon material in pallet to constrain in the effective range of electromagnetic force by being arranged on described silicon ingot.
Further, described thawing furnace indoor is provided with the insulation quilt one matching.
Further, described melting pot is formed around the graphite protective plate matching.
Further, the lower end of described silicon liquid flow ports and be located at insulation quilt one inner side be provided with match pottery shield
Plate.
Further, described silicon ingot supports in pallet and is provided with liquid-state silicon, and described silicon ingot supports pallet to be externally provided with phase
The insulation quilt two joined, described electromagnetic inductor is arranged at the upper end of described insulation quilt two and the surrounding of liquid-state silicon.
Further, described silicon ingot supports pallet upper end to be provided with height backplate.
Further, described height backplate is made of ceramic materials.
Preferably, described electromagnetic inductor is similar round or class square structure, and the length of side of described electromagnetic inductor
A size of 10-60cm, in the range of 1-10MKHz, within 500-30000A, voltage is in 1-1000V for operating current for operating frequency
Within.
A kind of crystalline silicon directional solidification growth technology, including：Silicon material is entered into described thawing furnace by charging aperture indoor
Portion, melts in melting pot, and timing appropriate solid-state silicon material of supplement into described melting pot；
Silicon liquid after melting is passed through silicon liquid flow ports and silicon liquid sprinkler and is flowed into given pace and with 360 degree of angles
Silicon ingot directional solidification system to lower section carries out solidifying, grows crystalline substance process；
Wherein, during solidification and long crystalline substance, because described silicon ingot supports pallet surrounding to be surrounded with electromagnetic inductor, institute
The electromagnetic force stating electromagnetic inductor supports the silicon material in pallet to constrain in the effective range of electromagnetic force by being arranged on described silicon ingot；
Molten silicon directional solidification from bottom to top in process of setting, meanwhile, described silicon ingot supports pallet drop-down with certain speed, to guarantee
During crystal silicon growth, solid liquid interface maintains stable height；
After the weight of crystal growth reaches setting weight, stop adding silicon material, continue the growth of bottom silicon ingot, until knot
Bundle；
Finally, Slow cooling silicon ingot, and take out.
Further, in silicon liquid flow process, silicon liquid flow-control bar can be led to or silicon liquid flow control valve controls liquid
The flow of silicon；
Further, during melting silicon material, described heater two maintains the specified temp of systemic presupposition, fixed to guarantee
To the required thermograde of solidification.
Beneficial effects of the present invention are：This apparatus structure is simple, easy to manufacture, and by this device and technology so that
Silicon material is melted and crystal growth is carried out simultaneously, greatly reduces energy consumption, and reduces production cost, additionally uses this technology,
There is high crystal growth rate, effectively raise production efficiency, be conducive to popularization and the application in market.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
Need use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only the present invention some enforcement
Example, for those of ordinary skill in the art, on the premise of not paying creative work, can also obtain according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is a kind of structural representation of the crystalline silicon directional solidification growth equipment described according to embodiments of the present invention 1；
Fig. 2 is a kind of knot of the crystalline silicon directional solidification growth equipment described according to embodiments of the present invention 2 and embodiment 3
Structure schematic diagram.
In figure：
1st, melt furnace chamber；2nd, insulation quilt one；3rd, heater one；4th, graphite protective plate；5th, material inlet valve；6th, melting pot；7、
Silicon liquid flow-control bar；8th, silicon liquid flow control valve；9th, silicon liquid flow ports；10th, ceramic backplate；11st, heater two；12nd, silicon liquid
Sprinkler；13rd, liquid-state silicon；14th, solid-state silicon；15th, electromagnetic inductor；16th, silicon ingot supports pallet；17th, insulation quilt two；18th, feed
Mouthful；19th, height backplate.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained, broadly fall into present invention protection
Scope.
As shown in figure 1, a kind of crystalline silicon directional solidification growth equipment according to embodiments of the present invention, including thawing furnace chamber 1,
Described thawing furnace chamber 1 upper end is provided with charging aperture 18, is provided with the material inlet valve 5 matching, described inlet valve at described charging aperture 18
The lower end of door 5 and be located in described thawing furnace chamber 1 and be provided with melting pot 6, described melting pot 6 be formed around heater 1,
And it is located at the middle part lower end of described melting pot 6 and is provided with silicon liquid flow ports 9, described silicon liquid flow ports 9 region is provided with and matches
Silicon liquid flow control valve 8 or silicon liquid flow-control bar 7, and described silicon liquid flow ports 9 lower end is provided with silicon liquid sprinkler 12, institute
State and below silicon liquid sprinkler 12, be provided with the silicon ingot directional solidification system matching.
Described silicon ingot directional solidification system includes the heating being arranged between described silicon liquid flow ports 9 and silicon liquid sprinkler 12
Device 2 11, and described silicon liquid sprinkler 12 lower end is provided with silicon ingot support pallet 16, and described silicon ingot supports pallet 16 surrounding to have ring
It is wound with electromagnetic inductor 15；Described heater 2 11 can be used for control crystalline silicon directional solidification process in temperature of thermal field and
Thermograde, described silicon material supports the surrounding of pallet 16 to have the electromagnetic inductor 15 of cincture, and described electromagnetic inductor 15 produces about
Bundle electromagnetic field, the liquid-state silicon that silicon ingot is supported pallet 16 top constrains in fixing scope.
It is provided with, inside described thawing furnace chamber 1, the insulation quilt 1 matching；Described insulation quilt 1 can effectively ensure to melt
Change the temperature in furnace chamber 1, be conducive to the thawing to fixing brilliant material, improve thawing efficiency.
Described melting pot 6 is formed around the graphite protective plate 4 matching；Due to graphite heat conducting and resistant to elevated temperatures feature, have
Help protect melting pot 6 under high temperature, effectively extend the service life of device.
The lower end of described silicon liquid flow ports 9 and be located at insulation quilt 1 inner side be provided with the ceramic backplate 10 matching；Described
Ceramic backplate 10 can effectively avoid insulation quilt chip to shed into silicon liquid, improve whole device use stability and can
By property.
Described silicon ingot supports and is provided with liquid-state silicon 13 in pallet 16, and described silicon ingot supports pallet 16 to be externally provided with to match
Insulation quilt 2 17, described electromagnetic inductor 15 is arranged at the upper end of described insulation quilt 2 17 and the surrounding of liquid-state silicon 13；Described silicon
Ingot supports pallet 16 upper end to be provided with height backplate 19；Described height backplate 19 is made of ceramic materials, described height backplate 19 He
Electromagnetic inductor 15 can effectively limit and be arranged at the height that described silicon ingot supports the silicon material on pallet 16, effectively prevent because
Silicon material is more and the phenomenon of overflow.
Described electromagnetic inductor 15 is similar round or class square structure, and the size dimension of described electromagnetic inductor 15
For 10-60cm, in the range of 1-10MKHz, within 500-30000A, voltage is in 1-1000V for operating current for operating frequency.
A kind of crystalline silicon directional solidification growth technology, including：Silicon material is entered into described thawing furnace chamber 1 by charging aperture 18
Inside, melts in melting pot 6, and the periodically appropriate solid-state silicon material of supplement into described melting pot 6, passes through meanwhile
Silicon liquid after thawing is coagulated by the silicon ingot directional solidification system that silicon liquid flow ports 9 and silicon liquid sprinkler 12 are flowed into lower section
Gu, long crystalline substance process；
Wherein, during solidification and long crystalline substance, because described silicon ingot supports pallet 16 surrounding to be surrounded with electromagnetic inductor
15, the electromagnetic force of described electromagnetic inductor 15 supports the silicon material in pallet 16 to constrain in having of electromagnetic force by being arranged on described silicon ingot
In the range of effect；
The electromagnetic force that described silicon liquid is produced by electromagnetic inductor 15 in silicon ingot support plate 16 constrains within the specific limits, liquid
The process of setting of body silicon liquid is directional solidification from bottom to top, simultaneously will be drop-down for silicon ingot support plate 16, solid during crystal silicon growth to guarantee
Liquid interface maintains stable height；
Wherein, described silicon ingot supports the pedestal of pallet 16 can make using graphite material, also can partly select or whole
From ceramic materials such as carborundum or silicon nitrides, silicon nitride coating can also be used for the release coating material between silicon and graphite simultaneously
Material；After silicon liquid flows on silicon ingot support pallet 16, heat release is radiated for radiation source to body of heater with the graphite that silicon ingot supports pallet 16, from
And silicon liquid post supports, in silicon ingot, the directional solidification process occurring on pallet 16 from bottom to top；
In directional solidification process, adjust the drop-down speed of graphite silicon ingot supporting bracket disk 16, maintain silicon ingot Chang Jing solid-liquid circle
Face height keeps constant, also controls simultaneously and melts the dirty speed of furnace chamber 1 silicon liquid, to keep silicon free surface constant height；
During melting silicon material, described heater 2 11 maintains the default specified temp of system, solidifying to guarantee orientation
Gu required thermograde.
In monocrystalline growing process, seed of single crystal silicon and silicon material can be laid on graphite silicon ingot supporting bracket disk 16, open
Open top heater melts silicon material and part seed crystal, then control and melt the inflow of furnace chamber 1 liquid-state silicon, when fluid column reaches specified altitude assignment
Afterwards, start crystal growing technology, during long crystalline substance, maintain silicon ingot solid liquid interface height and silicon liquid free interface highly stable.
After a certain amount of silicon material total amount completes above-mentioned long crystalline substance process, terminate the charging of solid-state and liquid silicon material, continue
Crystal growing process is until technique terminates.
Described silicon ingot supports pallet 16 bottom and surrounding can arrange insulation quilt, for specific technique, and specific
Open under process conditions, start the directional solidification processes of crystal.
Wherein, in silicon liquid flow process, the flow that silicon liquid flow-control bar 7 controls liquid-state silicon can be led to；
After the weight of crystal growth reaches setting weight, stop adding silicon material, continue the growth of bottom silicon ingot, until knot
Bundle；
Finally, Slow cooling silicon ingot, and take out.
Using directional solidification technique of the present utility model, melted due to silicon material and carry out with crystal growth simultaneously, greatly drop
Low energy consumption；This technology can use monkey simultaneously, reduces crucible cost, this technology has high crystal growth rate,
Therefore highly efficient in productivity；The silicon ingot of more than 1000Kg weight in the case of the silicon ingot of the 40cm length of side, can be grown daily.
As using this technology growing single-crystal silicon, not only energy consumption and cost and pulling of crystals or area melt that polycrystalline compares can be big
Big reduce, and quality can be improved further, it is low to have an oxygen content, the low advantage of defect concentration.
In order to be better understood upon technical scheme, applicant enumerates following examples：
Embodiment 1
In FIG, the about 50-80Kg silicon material heating and melting in melting pot 7 in furnace chamber 1, silicon material partial melting will be melted
Afterwards, support on pallet 16 by the silicon ingot that silicon liquid flow ports 9 flow into bottom directional solidification system, keep in silicon liquid flow process melting
Change the temperature in furnace chamber and melting state.
In crystal orientation solidification growth course, it is a certain amount of that described thawing furnace chamber 1 can supplement addition by material inlet valve 5
Silicon material, has enough silicon materials continuously to melt and flows into bottom directional solidification long crystallographic system system to meet.
Through the silicon liquid of silicon liquid flow ports 9, silicon ingot is flowed to by described silicon liquid sprinkler 12 and support pallet 16, described silicon liquid
The sprinkling mouth that sprinkler 12 has 360 degree sprays downwards silicon liquid.
Being sprayed onto silicon ingot supports the electromagnetic force that the silicon liquid on pallet 16 is produced by electromagnetic inductor 15 to be limited to specific model
In enclosing, silicon liquid fluid column size is about the class square-section of 40*40cm, as illustrated, be arranged at described silicon ingot supporting on pallet 16
Liquid-state silicon 13, the liquid-column height of the described liquid-state silicon 13 a certain particular value between 5-20cm, the size of electromagnetic inductor 15
Slightly larger than silicon liquid post, and described electromagnetic inductor 15 height is consistent with liquid-state silicon 13 liquid-column height.
After liquid-column height reaches intended height, open insulation quilt 2 17, start long crystalline substance process, heat during long crystalline substance
Device 2 11 maintains 1425 degree of temperature, to guarantee the silicon liquid thermograde needed for directional solidification.
Silicon liquid supports directional solidification from bottom to top on pallet 16 disk in silicon ingot, directional solidification speed in 8-12cm/h,
In directional solidification process, described silicon ingot supports pallet 16 to pull down, and its pulling rate ensures that the height of solid liquid interface is constant, simultaneously to from
The silicon liquid flow velocity melting furnace chamber 1 inflow is controlled it is ensured that silicon liquid liquid level and liquid-column height are stable.
In crystalchecked growth course, described silicon liquid flow ports 9 are by silicon liquid flow-control bar 7 or silicon liquid flow control valve 8
Control flow about in 20-50Kg/h, flow velocity just maintains liquid level in silicon liquid highly stable, in technical process, melt furnace chamber 1
Silicon material is melted with the speed being close to or higher than 20-50Kg/h.
In the present embodiment, the liquid-state silicon 13 in all silicon liquid posts is all constrained in by the electromagnetic force that electromagnetic inductor 15 produces
In particular range.
After the weight of crystal growth reaches setting weight, stop adding solid-state and liquid silicon material, continue bottom silicon ingot
Growth, until terminating, now only need to maintain solid liquid interface highly constant, need not maintain top liquid level height, heater 2 11
Temperature is stepped down to 1415 degree.
Finally, Slow cooling silicon ingot, and take out.
Embodiment 2
In fig. 2, by the described about 50-80Kg silicon material heating and melting melted in melting pot 7 in furnace chamber 1, silicon material part
After thawing, supported on pallet 16 by the silicon ingot that silicon liquid flow ports 9 flow into bottom directional solidification system.
In crystal orientation solidification growth course, melting furnace chamber can supplement a certain amount of silicon material of addition by material inlet valve 5,
To meet, silicon liquid is continuous to melt and the long crystallographic system system of liquid-state silicon inflow bottom directional solidification.
Through the silicon liquid of silicon liquid flow ports 9, silicon ingot is flowed to by silicon liquid sprinkler 12 and support pallet 16, silicon liquid sprinkler 12
The sprinkling mouth with 360 degree sprays downwards silicon liquid.
Being sprayed onto silicon ingot supports the electromagnetic force that the silicon liquid on pallet 16 disk is produced by electromagnetic inductor 15 to be limited to specifically
In the range of, silicon liquid fluid column size is about the class square-section of 40*40cm, and liquid-state silicon 13 liquid-column height is a certain between 5-20cm
Particular value, the certain altitude backplate 19 that the top of fluid column is made of ceramic materials constrains in certain space, and the lower section of fluid column is big
About necessarily high（0.5-5cm）The electromagnetic force that produced by electromagnetic induction of fluid column constrain within the specific limits, described electromagnetic induction
Device 15 be slightly larger in dimension than silicon liquid post.
After liquid-column height reaches intended height, open insulation quilt 2 17, start long crystalline substance process, heat during long crystalline substance
Device 2 11 maintains 1425 degree of temperature, to guarantee the silicon liquid thermograde needed for directional solidification.
Silicon liquid supports directional solidification from bottom to top on pallet 16 disk in silicon ingot, directional solidification speed in 8-12cm/h,
In directional solidification process, silicon ingot supports pallet 16 to pull down, and its pulling rate ensures that the height of solid liquid interface is constant.Simultaneously to from thawing
The silicon liquid flow velocity that furnace chamber 1 flows into is controlled it is ensured that silicon liquid liquid level and liquid-column height are stable.
In crystalchecked growth course, silicon liquid flow ports 9 are controlled by silicon liquid flow-control bar 7 or silicon liquid flow control valve 8
About in 20-50Kg/h, flow velocity just maintains liquid level in silicon liquid highly stable to flow, in technical process, melts furnace chamber 1 to connect
Near or higher than 20-50Kg/h speed melts silicon material.
In the present embodiment, there is the electromagnetic force that the liquid-state silicon 13 in part silicon liquid post all produces by electromagnetic inductor 15 about
Bundle, in particular range, separately has the height backplate 19 that the liquid-state silicon 13 of fluid column top half is made up of ceramic materials such as silicon nitrides about
Bundle is in particular space.
After the weight of crystal growth reaches setting weight, stop adding solid-state and liquid silicon material, continue the growth of silicon ingot,
Until terminating.Solid liquid interface now only need to be maintained highly constant, top liquid level height need not be maintained, the temperature of heater 2 11 by
Step is reduced to 1415 degree.
Finally, Slow cooling silicon ingot, and take out.
Embodiment 3
In fig. 2, support in silicon ingot and sectional dimension is placed on pallet 16 for 40cm*40cm, thickness is the monocrystal silicon of 1-2cm
Seed crystal, a little silicon material in seed crystal top side（5-20Kg about）, uniformly it is layered on seed crystal upper surface.
Heater 2 11, heating is placed on silicon ingot to support silicon material and single crystal seed on pallet 16, treats silicon material temperature
Close to fusing point when, open electromagnetic inductor 15 it is ensured that the silicon liquid of certain altitude melted is constrained in particular space by electromagnetic force,
Continue heating simultaneously and melt silicon material and portion of monocrystalline seed crystal on silicon ingot support pallet 16 from top to bottom；In melting process,
The about 50-80Kg silicon material heating and melting in melting pot 7 in furnace chamber 1 will be melted, after silicon material partial melting, by silicon liquid flow ports
9 silicon ingots flowing into bottom directional solidification system support in the silicon liquid of thawing of pallet 16.Melting pot 7 can pass through material inlet valve
5 supplement solid-state silicon material.
When single crystal seed partial melting（0.1-0.5cm）Control the temperature of heater 2 11 afterwards, keep solid liquid interface constant,
Continue through silicon liquid flow ports 9 to flow in the silicon liquid of thawing of silicon ingot support pallet 16 of bottom directional solidification system simultaneously.
After the silicon liquid fluid column that silicon ingot supports pallet 16 reaches the particular value between setting height 5-20cm, close silicon liquid stream
Open one's mouth 9.
Open insulation quilt 2 17 and start directional solidification length crystalline substance, open silicon liquid flow ports during long crystalline substance, control silicon liquid to flow,
Guarantee that silicon liquid liquid level keeps stable height.
During long crystalline substance, silicon ingot supports pallet 16 to pull downward on, and pulls speed to be equal to crystal growth rate, that is, keep solid-liquid
Interfacial level is constant.
During long crystalline substance, the temperature of heater 2 11 is reduced to 1425 degree, to maintain liquid-state silicon 13 constant in 20min
Thermograde.
In crystalchecked growth course, silicon liquid flow ports 9 are controlled by silicon liquid flow-control bar 7 or silicon liquid flow control valve 8
About in 20-50Kg/h, flow velocity just maintains liquid level in silicon liquid highly stable to flow, in technical process, melts furnace chamber 1 to connect
Near or higher than 50Kg/h speed melts silicon material.
In the present embodiment, the liquid-state silicon 13 in part silicon liquid post is constrained in specific by the electromagnetic force that electromagnetic inductor 15 produces
In the range of, separately there is the liquid-state silicon 13 of fluid column top half to be constrained in particular space by ceramic materials such as silicon nitrides.
After the weight of crystal growth reaches setting weight, stop adding solid-state and liquid silicon material, continue monocrystal silicon
Growth, until terminate.Solid liquid interface now only need to be maintained highly constant, top liquid level height need not be maintained, heater 2 11
Temperature is stepped down to 1415 degree.
Finally, Slow cooling silicon ingot, and take out.
This apparatus structure is simple, easy to manufacture, and by this device and technology so that silicon material is melted and crystal growth is same
Shi Jinhang, greatly reduces energy consumption, and reduces production cost, additionally uses this technology, has high crystal growth speed
Rate, effectively raises production efficiency, is conducive to popularization and the application in market.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Within god and principle, any modification, equivalent substitution and improvement made etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of crystalline silicon directional solidification growth equipment, including thawing furnace chamber（1）It is characterised in that described thawing furnace chamber（1）On
End is provided with charging aperture（18）, described charging aperture（18）Place is provided with the material inlet valve matching（5）, described material inlet valve（5）Under
Hold and be located at described thawing furnace chamber（1）Inside it is provided with melting pot（6）, described melting pot（6）It is formed around heater one（3）,
And it is located at described melting pot（6）Middle part lower end be provided with silicon liquid flow ports（9）, described silicon liquid flow ports（9）Region is provided with
The silicon liquid flow control valve matching（8）Or silicon liquid flow-control bar（7）, and described silicon liquid flow ports（9）Lower end is provided with silicon
Liquid sprinkler（12）, described silicon liquid sprinkler（12）Lower section is provided with the silicon ingot directional solidification system matching；Described silicon ingot orientation
Coagulation system includes being arranged at described silicon liquid flow ports（9）With silicon liquid sprinkler（12）Between heater two（11）, and institute
State silicon liquid sprinkler（12）Lower end is provided with silicon ingot and supports pallet（16）, described silicon ingot support pallet（16）Surrounding is surrounded with electromagnetism
Induction apparatuss（15）, and described electromagnetic inductor（15）Electromagnetic force will be arranged on described silicon ingot and support pallet（16）Interior silicon material
Constrain in the effective range of electromagnetic force.
2. crystalline silicon directional solidification growth equipment according to claim 1 is it is characterised in that described thawing furnace chamber（1）Interior
Side is provided with the insulation quilt one matching（2）.
3. crystalline silicon directional solidification growth equipment according to claim 2 is it is characterised in that described melting pot（6）Four
It is provided with the graphite protective plate matching week（4）.
4. crystalline silicon directional solidification growth equipment according to claim 3 is it is characterised in that described silicon liquid flow ports（9）
Lower end and be located at insulation quilt one（2）Inner side be provided with the ceramic backplate matching（10）.
5. crystalline silicon directional solidification growth equipment according to claim 1 is it is characterised in that described silicon ingot supports pallet
（16）Inside it is provided with liquid-state silicon（13）, and described silicon ingot supports pallet（16）It is externally provided with the insulation quilt two matching（17）, described
Electromagnetic inductor（15）It is arranged at described insulation quilt two（17）Upper end and liquid-state silicon（13）Surrounding.
6. crystalline silicon directional solidification growth equipment according to claim 5 is it is characterised in that described silicon ingot supports pallet
（16）Upper end is provided with height backplate（19）, and described height backplate（19）It is made of ceramic materials.
7. crystalline silicon directional solidification growth equipment according to claim 5 is it is characterised in that described electromagnetic inductor（15）
For similar round or class square structure, and the size dimension of described electromagnetic inductor is 10-60cm, and operating frequency is in 1-10MKHz
In the range of, within 500-30000A, running voltage is within 1-1000V for operating current.
8. the crystalline silicon directional solidification growth method of crystalline silicon directional solidification growth equipment described in a kind of employing claim 1, its
It is characterised by, including：
Silicon material is passed through charging aperture（18）Enter into described thawing furnace chamber（1）Inside, in melting pot（6）Middle thawing, and fixed
When to described melting pot（6）The appropriate solid-state silicon material of interior supplement；
Silicon liquid after melting passes through silicon liquid flow ports and silicon liquid sprinkler with the speed of 20-50kg/h and with 360 degree of angles
The silicon ingot directional solidification system being flowed into lower section carries out solidifying, grows crystalline substance process；
Wherein, during solidification and long crystalline substance, because described silicon ingot supports pallet（16）Surrounding is surrounded with electromagnetic inductor
（15）, described electromagnetic inductor（15）Electromagnetic force will be arranged on described silicon ingot and support pallet（16）Interior silicon material constrains in electromagnetism
In the effective range of power；Molten silicon directional solidification from bottom to top in process of setting, meanwhile, described silicon ingot supports pallet（6）Drop-down
And pull speed to be equal to crystal growth rate, to guarantee that during crystal silicon growth, solid liquid interface maintains stable height；
After the weight of crystal growth reaches setting weight, stop adding silicon material, continue the growth of bottom silicon ingot, until terminating；
Finally, Slow cooling silicon ingot, and take out.
9. crystalline silicon directional solidification growth method according to claim 8 is it is characterised in that in silicon liquid flow process,
Logical silicon liquid flow-control bar（7）Or silicon liquid flow control valve（8）Control the flow of liquid-state silicon, keep silicon liquid free surface highly steady
Fixed.
10. crystalline silicon directional solidification growth method according to claim 8 it is characterised in that melt silicon material during,
Described heater two（11）The default specified temp of maintenance system, to guarantee the thermograde needed for directional solidification.
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