CN203639604U - Flexible shaft lifting type single crystal furnace - Google Patents
Flexible shaft lifting type single crystal furnace Download PDFInfo
- Publication number
- CN203639604U CN203639604U CN201320678696.4U CN201320678696U CN203639604U CN 203639604 U CN203639604 U CN 203639604U CN 201320678696 U CN201320678696 U CN 201320678696U CN 203639604 U CN203639604 U CN 203639604U
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- CN
- China
- Prior art keywords
- heater
- flexible shaft
- single crystal
- shaft
- type single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 23
- 239000010439 graphite Substances 0.000 claims abstract description 23
- 230000008676 import Effects 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000013022 venting Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 14
- 239000007789 gas Substances 0.000 abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 239000002210 silicon-based material Substances 0.000 abstract description 6
- 229910052786 argon Inorganic materials 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a flexible shaft lifting type single crystal furnace which comprises a furnace body, a lifting device, a flexible shaft, a crucible and a seed shaft, wherein the upper end of the flexible shaft is connected with the lifting device, the lifting device is fixedly arranged on the seed shaft, the seed shaft is connected with a motor through a gear, the lower end of the flexible shaft is connected with a seed holder, a protective gas inlet and a vacuum extraction opening are respectively formed at the upper end of the furnace body, a graphite tray is arranged at the lower end of the furnace body, the crucible is placed on the graphite tray, the lower end of the graphite tray is fixedly connected with a crucible shaft, and a heater is arranged on the furnace body. According to the furnace disclosed by the utility model, a polycrystalline silicon material is melted by a graphite resistance heater in a protection environment of the inert gas (argon), and a single crystal rod without malposition is grown by the Czochralski method.
Description
Technical field
The utility model relates to a kind of single crystal growing furnace, is specifically related to a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace.
Background technology
Solar cell silicon single crystal ingot production technology mainly contains Czochralski method (CZ method) and zone melting method (FZ method), zone melting method (FZ method), due to the effect of segregation and the evaporative effect of impurity in silicon, can obtain high-purity silicon single crystal, but liquid-solid phase transition temperature is high, energy consumption is large, and repeatedly zone-refine cost is high.CZ method is to utilize in the melt of the seed crystal rotating from crucible to lift the method for preparing monocrystalline, claims again vertical pulling method.Current domestic solar cell silicon single crystal silicon chip manufacturer this technology of employing mostly, when polycrystalline silicon material is placed in to crucible through heat fused, after temperature is suitable, through by seed crystal immersion, welding, seeding, shouldering, turn the steps such as shoulder, isometrical, ending, complete the drawing of a silicon single crystal ingot.Under the environment of natural air, the process such as heat transfer in stove, mass transfer, hydromeehanics, chemical reaction all directly has influence on the growth of monocrystalline and the quality of the monocrystalline that grows into, therefore needs existing single crystal growing furnace to improve.
Utility model content
Technical problem to be solved in the utility model is for above-mentioned the deficiencies in the prior art; a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace is provided, and the utility model utilizes the protection of the environment of rare gas element, with graphite resistance heater; by polycrystalline silicon material fusing, by Grown by CZ Method dislocation-free single crystal rod.
The technical scheme that the utility model adopts is: a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace, comprise body of heater, pulling apparatus, flexible axle, crucible and seed shaft, described flexible axle upper end connects pulling apparatus, described pulling apparatus is fixedly installed on seed shaft, described seed shaft connects motor by gear, described flexible axle lower end is connected with seedholder, described body of heater upper end is respectively arranged with protection gas import and vacuum pumping opening, described body of heater lower end is provided with graphite support, described crucible is positioned in graphite support, described graphite support lower end is fixedly connected with crucible shaft, described body of heater is provided with well heater.
Described body of heater lower end is provided with venting port.
Described body of heater arranged outside has thermal insulation layer.
Described body of heater one side is also provided with optical diameter measuring apparatus.
Described well heater is graphite heater.
The electrode at the two ends of described well heater is connected with respectively Graphite Electrodes.
The utility model utilizes the protection of the environment of rare gas element (argon gas), with graphite resistance heater, by polycrystalline silicon material fusing, by Grown by CZ Method dislocation-free single crystal rod.
Brief description of the drawings
Fig. 1 is the utility model structural representation.
In figure: 1, body of heater; 2, pulling apparatus; 3, flexible axle; 4, crucible; 5, seedholder; 6, protection gas import; 7, vacuum pumping opening; 8, graphite support; 9, well heater; 10, seed shaft; 11, motor; 12, crucible shaft; 13, venting port; 14, optical diameter measuring apparatus.
Embodiment
Below in conjunction with accompanying drawing, and, the utility model is described further in conjunction with the embodiments.
As shown in Figure 1, a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace of the present embodiment, comprise body of heater 1, pulling apparatus 2, flexible axle 3, crucible 4 and seed shaft 10, described flexible axle 3 upper ends connect pulling apparatus 2, described pulling apparatus 2 is fixedly installed on seed shaft 10, described seed shaft 10 connects motor 11 by gear, described flexible axle 3 lower ends are connected with seedholder 5, described body of heater 1 upper end is respectively arranged with protection gas import 6 and vacuum pumping opening 7, described body of heater 1 lower end is provided with graphite support 8, described crucible 4 is positioned in graphite support 8, described graphite support 8 lower ends are fixedly connected with crucible shaft 12, described body of heater 1 is provided with well heater 9.
Described body of heater 1 lower end is provided with venting port 13.
Described body of heater 1 arranged outside has thermal insulation layer.
Described body of heater 1 one sides are also provided with optical diameter measuring apparatus 14.
Described well heater 9 is graphite heater.
The electrode at the two ends of described well heater 9 is connected with respectively Graphite Electrodes.
The utility model is in the time of work; vacuum pumping opening 7 is connected to off-gas pump to be vacuumized; be filled with rare gas element (argon gas) in protection gas import 6 simultaneously; then polycrystalline silicon material is placed in to crucible 4 through heat fused; after temperature is suitable; through by seed crystal immersion, welding, seeding, shouldering, turn the steps such as shoulder, isometrical, ending, complete the drawing of a silicon single crystal ingot.
The utility model utilizes the protection of the environment of rare gas element (argon gas), with graphite resistance heater 9, by polycrystalline silicon material fusing, by Grown by CZ Method dislocation-free single crystal rod.
Claims (6)
1. a flexible shaft of flexible shaft lifting type single crystal growing furnace, comprise body of heater (1), pulling apparatus (2), flexible axle (3), crucible (4) and seed shaft (10), it is characterized in that: described flexible axle (3) upper end connects pulling apparatus (2), described pulling apparatus (2) is fixedly installed on seed shaft (10), described seed shaft (10) connects motor (11) by gear, described flexible axle (3) lower end is connected with seedholder (5), described body of heater (1) upper end is respectively arranged with protection gas import (6) and vacuum pumping opening (7), described body of heater (1) lower end is provided with graphite support (8), described crucible (4) is positioned in graphite support (8), described graphite support (8) lower end is fixedly connected with crucible shaft (12), described body of heater (1) is provided with well heater (9).
2. a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace according to claim 1, is characterized in that: described body of heater (1) lower end is provided with venting port (13).
3. a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace according to claim 1, is characterized in that: described body of heater (1) arranged outside has thermal insulation layer.
4. a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace according to claim 1, is characterized in that: described body of heater (1) one side is also provided with optical diameter measuring apparatus (14).
5. a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace according to claim 1, is characterized in that: described well heater (9) is graphite heater.
6. a kind of flexible shaft of flexible shaft lifting type single crystal growing furnace according to claim 1, is characterized in that: the electrode at the two ends of described well heater (9) is connected with respectively Graphite Electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320678696.4U CN203639604U (en) | 2013-10-30 | 2013-10-30 | Flexible shaft lifting type single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320678696.4U CN203639604U (en) | 2013-10-30 | 2013-10-30 | Flexible shaft lifting type single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203639604U true CN203639604U (en) | 2014-06-11 |
Family
ID=50870864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320678696.4U Expired - Fee Related CN203639604U (en) | 2013-10-30 | 2013-10-30 | Flexible shaft lifting type single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203639604U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104264225A (en) * | 2014-09-05 | 2015-01-07 | 中国科学院理化技术研究所 | Seed crystal rod for growth of large-size LBO crystal and growth method |
| CN104264225B (en) * | 2014-09-05 | 2017-01-04 | 中国科学院理化技术研究所 | Growth method for large-size LBO crystal |
| CN113337881A (en) * | 2021-05-25 | 2021-09-03 | 宋斐 | Single crystal furnace |
| WO2023179627A1 (en) | 2022-03-21 | 2023-09-28 | 洛阳长缨新能源科技有限公司 | Crystal cooling apparatus for simultaneously drawing multiple crystals and artificial crystal preparation device |
-
2013
- 2013-10-30 CN CN201320678696.4U patent/CN203639604U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104264225A (en) * | 2014-09-05 | 2015-01-07 | 中国科学院理化技术研究所 | Seed crystal rod for growth of large-size LBO crystal and growth method |
| CN104264225B (en) * | 2014-09-05 | 2017-01-04 | 中国科学院理化技术研究所 | Growth method for large-size LBO crystal |
| CN113337881A (en) * | 2021-05-25 | 2021-09-03 | 宋斐 | Single crystal furnace |
| WO2023179627A1 (en) | 2022-03-21 | 2023-09-28 | 洛阳长缨新能源科技有限公司 | Crystal cooling apparatus for simultaneously drawing multiple crystals and artificial crystal preparation device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140611 Termination date: 20141030 |
|
| EXPY | Termination of patent right or utility model |