CN202626346U - Novel mono-like crystal ingot furnace - Google Patents

Novel mono-like crystal ingot furnace Download PDF

Info

Publication number
CN202626346U
CN202626346U CN 201220158980 CN201220158980U CN202626346U CN 202626346 U CN202626346 U CN 202626346U CN 201220158980 CN201220158980 CN 201220158980 CN 201220158980 U CN201220158980 U CN 201220158980U CN 202626346 U CN202626346 U CN 202626346U
Authority
CN
China
Prior art keywords
heat
insulation
ingot furnace
cage
insulation cage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201220158980
Other languages
Chinese (zh)
Inventor
金越顺
卫国军
朱卫锋
袁华中
张瑜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Jinggong Precision Manufacturing Co., Ltd.
Original Assignee
Zhejiang Jinggong Science and Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Jinggong Science and Technology Co Ltd filed Critical Zhejiang Jinggong Science and Technology Co Ltd
Priority to CN 201220158980 priority Critical patent/CN202626346U/en
Application granted granted Critical
Publication of CN202626346U publication Critical patent/CN202626346U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Abstract

The utility model discloses a novel mono-like crystal ingot furnace comprising a furnace body, a heat-insulating cage, a heat exchange table, a graphite crucible and graphite heat pieces, wherein the heat exchange table is arranged in the heat-insulating cage, the graphite crucible is arranged on the heat exchange table, the graphite heat pieces are clamped between heat-preserving materials on the inner wall of the heat-insulating cage and the graphite crucible, heat-preserving parting strips are arranged in the heat-insulating cage, and the heat-preserving parting strips are connected with a movable framework outside the heat-insulating cage through hanging rods. The heat-preserving parting strips in the heat-insulating cage can be lifted through the movable framework which controls temperature gradients of crystal growth in different periods. The ingot furnace can ensure solid liquid interface always to be kept close to a level and in slightly protruding state, and ensures smooth growth of monocrystal.

Description

A kind of novel accurate monocrystalline ingot furnace
Technical field:
The utility model relates to crystal silicon manufacturing technology field, especially relates to a kind of ingot furnace that is used to cast accurate monocrystalline.
Background technology:
Along with new energy technology use increasingly extensive, to solar cell require increasingly high, efficient, high-quality, the mode of production also more and more comes into one's own cheaply.
Silicon chip of solar cell mainly includes pulling of silicon single crystal, thin film amorphous silicon, casting polycrystalline silicon, banded polysilicon, membrane polysilicon, and these crystal silicons respectively have relative merits, and present most widely used crystal silicon is pulling of silicon single crystal and casting polycrystalline silicon; Account for about 90% of solar energy electric material, compare, the transformation efficiency of silicon single crystal will be higher than polysilicon; The commercial monocrystalline silicon battery sheet turnover ratio that uses is about 18%~19%; The existing method for preparing silicon single crystal mainly is a pulling of crystals, and the silicon single crystal that this method extract is circular, and diameter is about 150~220mm; Single casting output is on the low side; And because battery sheet desired shape is square, so also need be cut into the pulling of crystals of circle square, the silicon single crystal that causes actual utilization still less.Single ingot output of polysilicon has reached 660Kg, and the rate of can cutting is about in the of 68%~70%, and in addition because its ingot casting is shaped as rectangle, so utilization ratio greatly improves, but the transformation efficiency of polysilicon has only 16%~17%.
Adopt directional solidification method to cast monocrystalline and on output and utilization ratio, greater advantage is arranged; The key of casting monocrystalline is seeding and thermal field control; Seeding is meant in the quartz crucible bottom lays block seed crystal, melted silicon partial melting seed crystal, and receive inducing of seed crystal and the process of directional long crystal.Its thermal field of existing ingot furnace generally all is a hot chamber of fixed, wants to take into account thermal field gradient, the power consumption situation in each stage, and the control of solid-liquid face is difficulty very, and the later stage power to crystal growth provides not enough especially, is necessary to improve.
The utility model content:
The purpose of the utility model is the weak point that exists to prior art and a kind of novel accurate monocrystalline ingot furnace is provided, and it can control the thermograde in long brilliant each stage, remains solid-liquid interface near level or present the state of dimpling.
For realizing above-mentioned purpose; The novel accurate monocrystalline ingot furnace of the utility model includes body of heater, heat-insulation cage, heat exchange platform, plumbago crucible and graphite heating sheet, and wherein, the heat exchange platform is positioned at heat-insulation cage; Plumbago crucible is placed on the heat exchange platform; The graphite heating sheet is clipped between the lagging material and plumbago crucible on the heat-insulation cage inwall, and heat-insulation cage inside is provided with the insulation parting bead, and the insulation parting bead links to each other with the outside removable framework of heat-insulation cage through suspension rod.
Preferred as technique scheme, described framework be fixed on the body of heater top cover on link to each other by first lifting device of servo controller control transmission.
Preferred as technique scheme, described heat-insulation cage bottom opening place also is provided with removable and realizes the heat insulation bottom board that heat-insulation cage opens and closes.
Preferred as technique scheme, described heat insulation bottom board is driven by second lifting device that is fixed on bottom of furnace body.
The beneficial effect of the utility model is: it promotes the thermograde that the inner insulation parting bead of heat-insulation cage is controlled long brilliant each stage through removable framework, can remain solid-liquid interface near level or present the dimpling state, guarantees the smooth growth of monocrystalline.
Description of drawings:
Below in conjunction with accompanying drawing the utility model is done further explanation:
Fig. 1 is the one-piece construction synoptic diagram of the utility model.
Embodiment:
See shown in Figure 1: a kind of novel accurate monocrystalline ingot furnace of the utility model mainly includes body of heater 10, heat-insulation cage 20, heat exchange platform 30, plumbago crucible 40 and graphite heating sheet 50; Wherein, Heat exchange platform 30 is positioned at heat-insulation cage 20; Plumbago crucible 40 is placed on the heat exchange platform 30, and graphite heating sheet 50 is clipped between the lagging material and plumbago crucible 40 on heat-insulation cage 20 inwalls; Heat-insulation cage 20 inside are provided with a circle insulation parting bead 60; Insulation parting bead 60 links to each other with heat-insulation cage 20 outside removable stainless steel frames 70 through four suspension rods 61 being processed by resistant to elevated temperatures metal or non-metallic material; Framework 70 be fixed on body of heater 10 top covers on link to each other by the first lifting device (not shown) of servo controller (also can be cylinder) control transmission, thereby realize being incubated the up-down of parting bead 60.In addition, heat-insulation cage 20 bottom opening places are provided with movably heat insulation bottom board 80, and heat insulation bottom board 80 is driven by second lifting device 90 that is fixed on body of heater 10 bottoms, thereby realize the switching of heat-insulation cage 20.
The principle of work of the utility model is described below in conjunction with silicon single crystal ingot casting process:
The whole ingot casting process of silicon single crystal comprises five stages: heating, fusing, long brilliant, annealing, cooling, in heating and fusing early stage, insulation parting bead 60 is in lowest order, with abundant assurance heat from crucible backplate and heat exchange platform 30 entering silicon material.When temperature in the body of heater 10 rises to more than 1400 ℃; Insulation parting bead 60 promotes; The position arrives plumbago crucible 40 base plate upper edges; Be maintained to fusing and finish, promote insulation parting bead 60 and completely cut off the heat that flows in the silicon material through heat exchange platform 30 to a great extent, protection is placed on the seed crystal of plumbago crucible 40 bottoms.After getting into the long brilliant stage, by the processing parameter of setting, through reducing heat insulation bottom board 80, reach long brilliant effect, promote the isothermal curve that insulation parting bead 60 then makes every effort to reach a dimpling, the design of two separate spaces has also guaranteed the follow-up long brilliant power of crystal.After getting into annealing stage, insulation parting bead 60 reduces as far as possible, and heat insulation bottom board 80 is kept in the center and made heat-insulation cage 20 closures, and whole silicon ingot is under the uniform thermal field environment after long brilliant completion of assurance, reduces the generation of internal stress.
The utility model is compared with other ingot furnace; Have following 2 advantages: the thermal field of (1) other ingot furnace is fixed; Can't take into account the state of long brilliant each stage solid-liquid face; And the insulation parting bead of the utility model can go up and down with the variation of long brilliant trend, and a rational temperature lateral is provided, and optimizes crystal growth.(2) other ingot furnace is fixed owing to thermal field; At annealing stage; Whole silicon ingot can't be in stable, a homogeneous temp distributional environment, perhaps need reach the effect of internal stress for more time, and the insulation parting bead of the utility model can make silicon ingot more uniform temperature up and down; Shorten annealing time greatly, thereby effectively cut down the consumption of energy.
The above is merely the preferred embodiment of the utility model, does not therefore limit the protection domain of the utility model, and every equalization of doing according to the utility model changes with modifying and all belongs in the claim that the utility model contains.

Claims (4)

1. novel accurate monocrystalline ingot furnace; Include body of heater (10), heat-insulation cage (20), heat exchange platform (30), plumbago crucible (40) and graphite heating sheet (50); Wherein, Heat exchange platform (30) is positioned at heat-insulation cage (20), and plumbago crucible (40) is placed on the heat exchange platform (30), and graphite heating sheet (50) is clipped between the lagging material and plumbago crucible (40) on heat-insulation cage (20) inwall; It is characterized in that: heat-insulation cage (20) inside is provided with insulation parting bead (60), and insulation parting bead (60) links to each other with the outside removable framework (70) of heat-insulation cage (20) through suspension rod (61).
2. novel accurate monocrystalline ingot furnace according to claim 1 is characterized in that: described framework (70) be fixed on body of heater (10) top cover on link to each other by first lifting device of servo controller control transmission.
3. novel accurate monocrystalline ingot furnace according to claim 1 and 2 is characterized in that: described heat-insulation cage (20) bottom is provided with removable and realizes the heat insulation bottom board (80) that heat-insulation cage (20) opens and closes.
4. novel accurate monocrystalline ingot furnace according to claim 3 is characterized in that: described heat insulation bottom board (80) is driven by second lifting device (90) that is fixed on body of heater (10) bottom.
CN 201220158980 2012-04-13 2012-04-13 Novel mono-like crystal ingot furnace Expired - Fee Related CN202626346U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220158980 CN202626346U (en) 2012-04-13 2012-04-13 Novel mono-like crystal ingot furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220158980 CN202626346U (en) 2012-04-13 2012-04-13 Novel mono-like crystal ingot furnace

Publications (1)

Publication Number Publication Date
CN202626346U true CN202626346U (en) 2012-12-26

Family

ID=47379564

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220158980 Expired - Fee Related CN202626346U (en) 2012-04-13 2012-04-13 Novel mono-like crystal ingot furnace

Country Status (1)

Country Link
CN (1) CN202626346U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103409791A (en) * 2013-08-01 2013-11-27 安徽大晟新能源设备科技有限公司 Six-sided thermal field structure in thermal insulators of quasi-single crystal silicon ingot furnace
CN103757690A (en) * 2014-01-22 2014-04-30 高佳太阳能股份有限公司 Polycrystalline silicon ingot furnace
CN108588825A (en) * 2018-07-06 2018-09-28 浙江精功科技股份有限公司 A kind of moveable ingot furnace of side heater and its casting ingot process

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103409791A (en) * 2013-08-01 2013-11-27 安徽大晟新能源设备科技有限公司 Six-sided thermal field structure in thermal insulators of quasi-single crystal silicon ingot furnace
CN103757690A (en) * 2014-01-22 2014-04-30 高佳太阳能股份有限公司 Polycrystalline silicon ingot furnace
CN108588825A (en) * 2018-07-06 2018-09-28 浙江精功科技股份有限公司 A kind of moveable ingot furnace of side heater and its casting ingot process
CN108588825B (en) * 2018-07-06 2024-03-15 浙江精工集成科技股份有限公司 Ingot furnace with movable side heater and ingot casting process thereof

Similar Documents

Publication Publication Date Title
CN202558970U (en) Single crystal like silicon ingot furnace
CN102108544A (en) Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface
CN102162125B (en) Thermal field structure of polysilicon ingot casting furnace
CN102877117A (en) Ingot furnace thermal field structure based on multi-heater and operation method
CN102732959A (en) Polysilicon ingot furnace and polysilicon ingot casting method
CN202989351U (en) Ingot furnace thermal field structure based on multiple heaters
CN108588825A (en) A kind of moveable ingot furnace of side heater and its casting ingot process
CN103849928A (en) Multiple-piece guided mode method growth technology for sapphire wafer
CN101851782A (en) Double-cavity heat-insulation cage of second single crystal silicon ingot production furnace
CN202626346U (en) Novel mono-like crystal ingot furnace
CN201183846Y (en) Thermal field structure of polycrystalline silicon casting furnace
CN102433585B (en) Thermal field structure of quasi-monocrystal ingot furnace
CN102425006A (en) Method and thermal field for growing ingot polycrystal silicon by adopting directional solidification method
CN103184516B (en) Polysilicon ingot casting thermal-field structure and method capable of reducing shadows and hard spots
CN202744660U (en) Thermal field structure for ultra-large crystal grain ingot furnace
CN202717880U (en) Novel polysilicon ingot casting furnace thermal field structure
CN104695014A (en) Annealing technique of cast polycrystalline silicon
CN203382848U (en) High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate
CN203382850U (en) Polycrystalline silicon ingot furnace thermal field heating device
CN202323115U (en) Side thermal field structure of polycrystalline silicon ingot furnace
CN202755096U (en) Heat insulation device for ingot furnace
CN108193267A (en) A kind of polysilicon ingot casting equipment
CN201473324U (en) Overhead type polysilicon furnace with upper heater and lower heater
CN204111924U (en) A kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure
CN201695105U (en) Double-cavity heat-insulation cage of secondary monocrystal silicon ingot furnace

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20170308

Address after: Keqiao District of Zhejiang city in Shaoxing province 312030 Huashe Jianhu Road No. 2106

Patentee after: Zhejiang Jinggong Precision Manufacturing Co., Ltd.

Address before: 312030 Zhejiang city of Shaoxing province Keqiao Jianhu Road No. 1809

Patentee before: Zhejiang Jinggong Science & Technology Co., Ltd.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121226

Termination date: 20190413

CF01 Termination of patent right due to non-payment of annual fee