CN201473324U - Overhead type polysilicon furnace with upper heater and lower heater - Google Patents

Overhead type polysilicon furnace with upper heater and lower heater Download PDF

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Publication number
CN201473324U
CN201473324U CN2009202329874U CN200920232987U CN201473324U CN 201473324 U CN201473324 U CN 201473324U CN 2009202329874 U CN2009202329874 U CN 2009202329874U CN 200920232987 U CN200920232987 U CN 200920232987U CN 201473324 U CN201473324 U CN 201473324U
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China
Prior art keywords
heater
insulation cage
cage
thermal insulation
lower heater
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Expired - Fee Related
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CN2009202329874U
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Chinese (zh)
Inventor
王泽平
王波
范钦满
文林
管文礼
Original Assignee
管悦
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Priority to CN2009202329874U priority Critical patent/CN201473324U/en
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Publication of CN201473324U publication Critical patent/CN201473324U/en
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Abstract

The utility model relates to an overhead type polysilicon furnace with an upper heater and a lower heater, which comprises a furnace body. An insulation cage is arranged in the furnace body, a filled crucible is arranged on a bearing platform on the bottom of the insulation cage, the upper heater and the lower heater are arranged in the insulation cage, the insulation cage is provided with a surrounding cage body, an upper cover and a bottom plate, the upper heater is fixed with the upper cover of the insulation cage, the lower heater is arranged between the bearing platform and the bottom plate of the insulation cage, the middle part of the bottom plate of the insulation cage is provided with a hot door, and a cooling plate is arranged below the hot door. The surrounding cage body, the insulating bottom plate and the insulating upper cover of the insulation cage form a closed thermal field chamber. During crystal growth, the hot door is opened at first, the lower heater, the upper heater and the cooling plate form a novel temperature field, the vertical temperature gradient can be formed with the matching power of the lower heater and the upper heater, and the silicon crystal is annealed and cooled until the silicon ingot is formed during the furnace with the matching power of the lower heater and the upper heater after the silicon crystal is formed. The utility model can be used for producing high-quality silicon ingots, and has the advantages of reducing the time of the whole process and the energy consumption.

Description

Jia Re up-set type polycrystalline silicon furnace up and down
Technical field
The utility model relates to a kind of production unit that is used to produce the base mateiral of solar level battery, particularly a kind of up-set type polycrystalline silicon furnace of heating up and down.
Background technology
Sun power is human inexhaustible renewable energy source, also is clean energy, and solar cell is exactly to utilize photovoltaic effectiveness sun power directly to be converted to a kind of device of electric energy.Making solar cell mainly is based on silicon materials, by the directional freeze ingot casting, have stable efficiency of conversion, and the ratio of performance to price is the highest, will satisfy silico briquette section encapsulation process and become the finished product.
Polycrystalline silicon ingot or purifying furnace is a kind of silicon melting equipment, is to produce the peculiar visual plant of big specification solar level cell polysilicon ingot.In the production, will meet the requirements of polycrystalline silicon material and pack in the stove, come out of the stove by vacuum, heating, fusing, long brilliant, annealing, cooling.Unmelted polycrystalline silicon, long crystalline substance, the such core environment of annealing become thermal field.The home-made polycrystalline silicon furnace is all with bottom-open type, the still supreme up-set type polycrystalline silicon furnace of heating down.
Summary of the invention
The technical problems to be solved in the utility model is at the deficiencies in the prior art, has proposed a kind of reasonable in designly, improves the up-set type polycrystalline silicon furnace of heating up and down of the silicon wafer ingot quality of production.
The technical problems to be solved in the utility model is achieved through the following technical solutions, a kind of up-set type polycrystalline silicon furnace of heating up and down, be provided with body of heater, be provided with Thermal insulation cage in the body of heater, the charging crucible is placed on accepting on the platform of Thermal insulation cage bottom, in Thermal insulation cage, be provided with upper heater and following well heater, cage body, loam cake and base plate around Thermal insulation cage is provided with, be characterized in: the loam cake of going up heating member and Thermal insulation cage is fixed, following heating member is arranged between the base plate of accepting platform and Thermal insulation cage, middle part at the base plate of Thermal insulation cage is provided with hot topic, is provided with cooling plate below hot topic.
The technical problems to be solved in the utility model can also come by the following technical programs further to realize that the cage body is fixed around following heating member and the Thermal insulation cage.
The utility model compared with prior art is made of the thermal field chamber of a sealing cage body, heat insulation bottom board, heat insulation loam cake around the Thermal insulation cage.Carry out silicon wafer fusing (heating up and insulation) by technological operation, when long crystalline substance, open popular earlier, by well heater, upper heater and cooling plate are formed a new temperature field down, the power match of well heater and upper heater under utilizing again, make Thermal insulation cage form a vertical thermograde, treat to utilize again after the silicon crystallization down the power match of well heater and upper heater silicon wafer to be annealed and cool off until the silicon wafer ingot and come out of the stove.It can not only produce high-quality silicon ingot, also shortens the whole process time, and energy consumption is low.Thermal field device of the present utility model is reasonable in design, and upper and lower thermal field is easy and simple to handle, no mechanism relative movement in the stove in the silicon wafer process of growth, and therefore long crystalloid amount is stable, can produce the polycrystal silicon ingot of big specification.
Description of drawings
Fig. 1 is a structure diagram of the present utility model.
Embodiment
A kind of up-set type polycrystalline silicon furnace of heating up and down, be provided with body of heater 1, be provided with Thermal insulation cage in the body of heater 1, charging crucible 4 is placed on accepting on the platform 5 of Thermal insulation cage bottom, in Thermal insulation cage, be provided with upper heater 3 and following well heater 7, cage body 6, loam cake 2 and base plate 10 around Thermal insulation cage is provided with, last heating member 3 is fixing with the loam cake 2 of Thermal insulation cage, following heating member 7 is arranged between the base plate 10 of accepting platform 5 and Thermal insulation cage, be provided with popular 8 at the middle part of the base plate 10 of Thermal insulation cage, be provided with cooling plate 9 below popular 8, following heating member 7 is fixing with the cage body all around 6 of Thermal insulation cage.
The silicon material of in crucible, packing into, lifting goes in the body of heater to accept on the platform, and adjust to the right place, close fire door, open well heater, upper heater down, carry out silicon wafer fusing (heating up and insulation) by technological operation, when long crystalline substance, open popular earlier, by well heater, upper heater and cooling plate are formed a new temperature field down, the power match of well heater and upper heater under utilizing again, make Thermal insulation cage form a vertical thermograde, treat to utilize again after the silicon crystallization down the power match of well heater and upper heater silicon wafer to be annealed and cool off until the silicon wafer ingot and come out of the stove.
The utility model is applicable to that solar-grade polysilicon stove thermal field manufactures and designs, and can produce high-quality silicon ingot, also shortens the whole process time, and energy consumption is low.

Claims (2)

  1. One kind up and down the heating the up-set type polycrystalline silicon furnace, be provided with body of heater, be provided with Thermal insulation cage in the body of heater, the charging crucible is placed on accepting on the platform of Thermal insulation cage bottom, is provided with upper heater and following well heater in Thermal insulation cage, cage body, loam cake and base plate around Thermal insulation cage is provided with, it is characterized in that: the loam cake of going up heating member and Thermal insulation cage is fixed, following heating member is arranged between the base plate of accepting platform and Thermal insulation cage, is provided with hot topic at the middle part of the base plate of Thermal insulation cage, is provided with cooling plate below hot topic.
  2. 2. the up-set type polycrystalline silicon furnace of heating up and down according to claim 1, it is characterized in that: the cage body is fixed around following heating member and the Thermal insulation cage.
CN2009202329874U 2009-07-27 2009-07-27 Overhead type polysilicon furnace with upper heater and lower heater Expired - Fee Related CN201473324U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009202329874U CN201473324U (en) 2009-07-27 2009-07-27 Overhead type polysilicon furnace with upper heater and lower heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009202329874U CN201473324U (en) 2009-07-27 2009-07-27 Overhead type polysilicon furnace with upper heater and lower heater

Publications (1)

Publication Number Publication Date
CN201473324U true CN201473324U (en) 2010-05-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009202329874U Expired - Fee Related CN201473324U (en) 2009-07-27 2009-07-27 Overhead type polysilicon furnace with upper heater and lower heater

Country Status (1)

Country Link
CN (1) CN201473324U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102289235A (en) * 2011-07-22 2011-12-21 宁波晶元太阳能有限公司 Heating control system and method based on top separated control polycrystalline silicon ingot casting furnace
CN102732959A (en) * 2011-04-11 2012-10-17 上海普罗新能源有限公司 Polysilicon ingot furnace and polysilicon ingot casting method
CN102732961A (en) * 2012-06-01 2012-10-17 沈阳森之洋光伏科技有限公司 Cooling method and cooling apparatus of polysilicon ingot furnace

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102732959A (en) * 2011-04-11 2012-10-17 上海普罗新能源有限公司 Polysilicon ingot furnace and polysilicon ingot casting method
CN102289235A (en) * 2011-07-22 2011-12-21 宁波晶元太阳能有限公司 Heating control system and method based on top separated control polycrystalline silicon ingot casting furnace
CN102732961A (en) * 2012-06-01 2012-10-17 沈阳森之洋光伏科技有限公司 Cooling method and cooling apparatus of polysilicon ingot furnace

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100519

Termination date: 20110727